JPH09260300A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device wherein uniformity of the temperature distribution in the surface of a wafer is improved. SOLUTION: A circulating pipe 230 is installed in a heater 220, and a reaction pipe 100 is installed inside the pipe 230. The reaction pipe 100 is equipped with a reaction pipe main body 10, a gas supplying pipe 136, a gas distributing chamber 140, and gas introducing pipes 111-114. Gas is supplied from the gas supplying pipe 136, and dispersed in the peripheral direction of the reaction main pipe body 10 by the gas distributing chamber 140. After that, the gas is induced to the upper part of the reaction pipe main body 10 by the gas introduing pipes 111-114, and therefrom supplied to the inside of the reaction pipe main body 10. Gas after reaction is discharged from an exhaust pipe 51. Wafers 200 are horizontally stacked in a boat 210 in the reaction pipe main body 10. Since gas is dispersed in the peripheral part of the reaction pipe main body 10 by the gas distributing chamber 140, the condition of the peripheral part of the reaction pipe main body 10 becomes almost uniform. A part which is locally cooled in the surface of the wafer 200 does not exist, and uniformity of the temperature distribution is improved.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a semiconductor manufacturing apparatus for performing processing such as oxidation, diffusion and heat treatment on a semiconductor wafer.

[0002]

2. Description of the Related Art One of semiconductor manufacturing processes is a process of forming a thermal oxide film on the surface of a silicon wafer. This process is performed by using, for example, a vertical semiconductor manufacturing apparatus shown in FIGS. 14A and 14B. .

FIG. 14A is a vertical sectional view of a conventional semiconductor manufacturing apparatus 1, and FIG. 14B is a sectional view taken along line X14-X14 of FIG. 14A.

As shown in FIGS. 14A and 14B, in this semiconductor manufacturing apparatus 1, a soaking tube 230 is provided in a hollow heater 220, and a reaction tube 100 is provided in the soaking tube 230. The soaking tube 230 is made of a material having a large heat capacity and is used to maintain temperature uniformity in the furnace. The reaction tube 100 includes a reaction tube body 10 and a reaction tube body 10 having a circular cross section.
A book gas introduction pipe 20 is provided. An upper gas introducing pipe 40 is provided on the ceiling plate 14 above the reaction tube body 10, and a shower chamber 42 is defined by the upper gas introducing pipe 40 and the ceiling plate 14. Ceiling board 1 in the shower room 42
Reference numeral 4 denotes a gas shower plate 30 provided with a plurality of gas dispersion holes 32, and the shower chamber 42 communicates with the inside of the reaction tube body 10 via the gas shower plate 30. The gas introducing pipe 20 is provided in the vertical direction along the generatrix direction on the outer surface of the reaction tube body 10, and the gas introducing pipe gas introducing portion 21 is provided at the lower end which is the upstream side thereof, and the gas introducing pipe 21 is the downstream side. The upper end communicates with the shower chamber 42 provided at the upper portion of the reaction tube body 10. An exhaust pipe 50 is provided in communication near the lower end of the reaction tube body 10. The gas introduction pipe gas introduction unit 21 is connected to a reaction gas supply source (not shown),
The exhaust pipe 50 is connected to an exhaust device (not shown).

The boat 210 is moved up and down by a boat elevator (not shown), whereby the reaction tube body 10
It is introduced inside and taken out from the reaction tube body 10. The boat 210 is erected on the boat cap 60, and the boat cap 60 is provided on the furnace port cover 62. A flange 12 is provided around the lower end of the reaction tube body 10, and an O-ring 64 is sandwiched between the flange 12 and the furnace port lid 62.
0 is airtightly sealed.

The boat 210 is provided with four boat stanchions 212, and the boat stanchions 212 include a plurality of wafers 2.
00 are loaded in multiple stages in a horizontal posture, and wafers 20
O is oxidized in a state of being loaded in the boat 210, and an oxide film is formed on the surface thereof.

The wafer 22 is oxidized by the heater 22.
Oxygen gas is supplied to the shower chamber 42 by the gas introduction pipe 20 in a state where the inside of the furnace and the wafer 200 are heated and maintained at the oxidation treatment temperature by 0, and the gas is introduced from the shower chamber 42 through the gas dispersion holes 32 of the gas shower plate 30. The reaction tube body 10
Distributed within. The oxygen gas reacts with the wafer 200 to form an oxide film on the surface of the wafer 200. The gas after the reaction is exhausted through the exhaust pipe 50.

The length of the reaction gas introducing pipe 20 is substantially the same as the length in the heater 220 and the soaking pipe 230 of the reaction tube body 10. The oxygen gas introduced from the gas introduction tube gas introduction section 21 at a temperature near room temperature is heated while passing through the gas introduction tube 20, and when reaching the shower chamber 42, the temperature inside the reaction tube body 10 and the wafer 200. It is considered that the temperature becomes almost the same as the temperature of the above, and the temperature is introduced into the reaction tube body 10.

[0009]

However, since the oxygen gas around the room temperature is introduced from the gas introducing pipe gas introducing portion 21, the temperature difference between the upstream side of the gas introducing pipe 20 and the inside of the furnace is large. Also, the amount of heat absorbed from the furnace is large. Therefore, when the oxygen gas is supplied through the single gas introduction pipe 20, the gas introduction pipe 2 is located at the upstream side of the gas introduction pipe 20.
The wafer 200 was partially cooled in the vicinity of 0, and in particular, the temperature distribution in the wafer surface was nonuniform. Since the temperature of the wafer influences the film formation rate of the oxide film, it causes nonuniformity of the film thickness of the oxide film within the wafer surface.

In order to solve such a problem, JP-A-6-326079 proposes to use a reaction tube having a double tube structure. FIG. 15 is a perspective view for explaining a reaction tube having such a double tube structure. This double-tube structure reaction tube 400 is a hollow inner reaction tube 41.
0 and a hollow outer reaction tube 420. The inner reaction tube 410 has a cylindrical shape and includes a ceiling plate 414. The outer reaction tube 420 is also cylindrical and has a ceiling plate 440. The inner reaction tube 410 and the outer reaction tube 420 are concentrically arranged, and a gas induction space 460 is defined between the inner reaction tube 410 and the outer reaction tube 420. The central portion of the ceiling plate 414 of the inner reaction tube 410 has a plurality of gas dispersion holes 4
It is a gas shower plate 430 provided with 32,
The gas induction space 460 communicates with the inside of the inner reaction tube 410 via the gas shower plate 430. Outer reaction tube 420
A gas supply pipe 421 is provided near the lower end of the gas guide space 4
It is provided so as to communicate with 60. The lower end of the outer reaction tube 420 is closed.

Also in the reaction tube 400 having the double tube structure, the oxygen gas introduced from the gas supply tube 421 at a temperature near room temperature forms a gas guide space 460 between the inner reaction tube 410 and the outer reaction tube 420. It is heated during passage, and when it reaches the gas shower plate 430, the temperature becomes almost the same as the temperature inside the inner reaction tube 410 and the temperature of the wafer, and is introduced into the inner reaction tube 410. In this case, the gas supply pipe 42
Since the oxygen gas introduced from No. 1 spreads and flows in the gas guiding space 460, the non-uniformity of the temperature distribution in the wafer surface is smaller than that in the case of using one gas introducing pipe 20 as shown in FIG. Expected to be improved.

However, in this conventional double pipe structure, since no devise has been made to uniformly flow the gas, the gas guide space 460 on the opposite side of the gas supply pipe 421 is provided.
A region 450 where there is almost no gas flow was generated in the wafer, and as a result, the non-uniformity of the temperature distribution in the wafer surface also occurred. Since the temperature of the wafer influences the film formation rate of the oxide film, it causes nonuniformity of the film thickness of the oxide film within the wafer surface.

Therefore, a main object of the present invention is to provide a semiconductor manufacturing apparatus in which the uniformity of temperature distribution in the wafer surface is improved.

[0014]

According to the present invention, there is provided a heating means, a reaction tube provided in the heating means, and a gas introduction part and an exhaust gas which are separated from each other by a predetermined distance in the longitudinal direction of the reaction tube. A gas supply pipe provided on the side of the exhaust part, and a gas distribution means provided on the side of the exhaust part, wherein the gas supplied from the gas supply pipe is A gas distribution means for distributing in the circumferential direction, and a gas extending from the gas distribution means to the gas introduction part along the side wall of the reaction tube, and distributed by the gas distribution means in the circumferential direction of the reaction tube, There is provided a semiconductor manufacturing apparatus, comprising: a gas guiding unit that guides the gas to a gas introduction unit.

As described above, gas distribution means for distributing the gas supplied from the gas supply pipe in the circumferential direction of the reaction pipe is provided,
By providing gas guiding means extending from the gas distributing means to the gas introducing portion along the side wall of the reaction tube and guiding the gas distributed in the circumferential direction of the reaction tube by the gas distributing means to the gas introducing portion, the reaction It is possible to improve the uniformity of the temperature distribution in the tube, particularly in the plane orthogonal to the longitudinal direction.

The semiconductor manufacturing apparatus of the present invention is preferably
The reaction tube may further include substrate holding means capable of holding the main surface of the substrate to be processed substantially at right angles to the longitudinal direction.

Further, preferably, in the semiconductor manufacturing apparatus of the present invention, a plurality of substrates to be processed can be stacked and held in the reaction tube in the longitudinal direction, and each of the plurality of the substrates to be processed can be held. Further comprises substrate holding means capable of holding the main surface of the substrate substantially at right angles to the longitudinal direction.

By holding the substrate at right angles to the longitudinal direction in this manner, the uniformity of the temperature distribution in the plane of the substrate is improved.

Further, in the semiconductor device of the present invention, preferably, the reaction tube has a circular cross section.
The reaction tube having such a shape is preferably used when the substrate is a semiconductor wafer.

Preferably, the gas distribution means is
A gas distribution chamber provided on the side of the exhaust unit along the side wall of the reaction tube, which is provided around the reaction tube along the circumferential surface of the reaction tube and has a predetermined length in the longitudinal direction. Is a gas distribution chamber having a height, the resistance means for resistance to the flow of gas is provided at one end portion of the distribution chamber in the longitudinal direction of the gas introduction portion side,
The gas supply pipe is provided so as to communicate with the gas distribution chamber at a position separated from the one end of the distribution chamber by a predetermined distance in the longitudinal direction toward the other end of the distribution chamber.

In this case, preferably, the reactor further comprises a reaction chamber reaction tube for a distribution chamber which is arranged concentrically with the reaction tube and has a circular cross-section, and both side walls of the distribution chamber are connected to the reaction tube. It is composed of the reaction tube for the distribution chamber.

The resistance means is preferably a ring-shaped plate provided with a plurality of gas lead-out holes, and the ring-shaped plate is provided between the reaction tube and the reaction tube for distribution chamber. There is.

In this case, it is preferable that the plurality of gas outlet holes are provided at substantially equal intervals around the reaction tube. By doing so, the circumference of the reaction tube becomes a substantially uniform condition, and the uniformity of temperature distribution is improved.

Further, the plurality of gas outlet holes may be increased in size with increasing distance from the gas supply pipe. By doing this, the flow rate of the gas discharged from the plurality of gas discharge holes becomes uniform in the gas discharge hole pipe,
The uniformity of temperature distribution is further improved.

The intervals between the plurality of gas outlet holes may be narrowed as the distance from the gas supply pipe increases. With this configuration, the effect of cooling by the gas led out from the plurality of gas lead-out holes and flowing in the gas guiding means is likely to be uniform around the reaction tube, and as a result, the uniformity of the temperature distribution is further improved.

Further, a porous material provided in the distribution chamber between the resistance means and the gas supply pipe may be further provided. As described above, when the porous material is provided, the gas is more dispersed, and the flow rate of the gas discharged from the plurality of gas outlet holes becomes more uniform between the gas outlet holes, which further improves the uniformity of temperature distribution. To do.

Also, preferably, the resistance means is a porous material, and the porous material is provided between the reaction tube and the reaction tube for the distribution chamber. When the porous material is used as described above, the flow rate of the gas discharged from the porous material becomes uniform around the reaction tube, and the uniformity of the temperature distribution is improved.

Preferably, the gas guiding means is
It is a gas induction space defined between the reaction tube and a second reaction tube provided concentrically. If you do this,
Since the gas distributed around the reaction tube by the gas distribution means is guided to the gas introduction section over the entire outer circumference of the reaction tube, the flow rate of the gas flowing around the reaction tube becomes uniform and the temperature distribution becomes uniform. improves.

It is also preferable to provide at least one of the gas distributing means and the gas guiding means inside the reaction tube. In this way, the reaction tube can be easily washed.

Further, according to the present invention, the heating means and the first reaction tube provided in the heating means, the gas introducing section being separated by a predetermined distance in the longitudinal direction of the first reaction tube. Between the first reaction tube and the second reaction tube, a second reaction tube concentrically provided with the first reaction tube, A gas space formed between the first reaction tube and the second reaction tube, the gas space communicating with the gas introduction section, and the gas dispersion means provided on the exhaust section side; With respect to the means, there is provided a semiconductor manufacturing apparatus, comprising: a gas supply pipe provided on the side opposite to the gas introduction portion in the longitudinal direction so as to communicate with the gas space.

By doing so, in a semiconductor manufacturing apparatus having a reaction tube having a double tube structure, it is possible to improve the uniformity of temperature distribution in a plane orthogonal to the longitudinal direction.

The gas dispersion means is preferably a plate provided with a plurality of gas lead-out holes, and the plate is provided between the first reaction tube and the second reaction tube.

It is also preferable that the gas distributing means is a porous material, and the porous material is provided between the first reaction tube and the second reaction tube.

Further, according to the present invention, the heating means and the first reaction tube provided in the heating means, the gas introducing section being separated by a predetermined distance in the longitudinal direction of the first reaction tube. Between the first reaction tube and the second reaction tube, a second reaction tube concentrically provided with the first reaction tube, A gas space formed and communicating with the gas introducing part, and a plurality of gases provided in communication with the gas space at substantially equidistant positions around the second reaction tube on the exhaust part side. Provided is a semiconductor manufacturing apparatus including a supply pipe.

Thus, by providing a plurality of gas supply pipes at equal intervals, the uniformity of temperature distribution is improved.

[0036]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described with reference to the drawings.

(First Embodiment) FIG. 1A is a vertical cross-sectional view for explaining a semiconductor manufacturing apparatus according to a first embodiment of the present invention, and FIG. 1B is a line X1-X1 of FIG. 1A. FIG. 2 is a cross-sectional view, FIG. 2 is a perspective view for explaining a reaction tube used in the semiconductor manufacturing apparatus of the first embodiment of the present invention, and FIG. 3 is a first embodiment of the present invention. FIG. 7 is a partially enlarged perspective view for explaining a reaction tube used in the semiconductor manufacturing apparatus of the above mode.

In this semiconductor manufacturing apparatus 1, a soaking tube 230 is provided in the hollow heater 220, and the soaking tube 23 is provided.
A reaction tube 100 is provided within the space 0. The soaking tube 230 is made of a material having a large heat capacity (for example, SiC) and is used to maintain the temperature uniformity in the furnace.

The reaction tube 100 is provided with a hollow reaction tube body 10 having a circular cross section, four gas introduction tubes 111 to 114, and a gas distribution chamber 140.

An upper gas introducing pipe 40 is provided on the ceiling plate 14 on the upper side of the reaction tube body 10, and the shower chamber 42 is defined by the upper gas introducing pipe 40 and the ceiling plate 14.
The ceiling plate 14 in the shower room 42 has a plurality of gas dispersion holes 3
2 is provided, and the shower chamber 42 is provided with the reaction tube body 1 through the gas shower plate 30.
0 communicates with the inside.

The gas distribution chamber 140 is provided below the reaction tube body 10. The gas distribution chamber 140 is provided around the reaction tube body 10 along the circumferential surface of the reaction tube body 10 and has a length A in the generatrix direction of the reaction tube body 10.

The reaction tube body 10, a cylindrical gas distribution chamber outer reaction tube 141 which is arranged outside the reaction tube body 10 concentrically with the reaction tube body 10, and a gas distribution chamber outer reaction tube 14
1 is provided between the upper end of the reaction tube main body 10 and the ceiling plate 142, and the bottom plate 144 is provided between the lower end of the reaction tube outer reaction tube 141 and the reaction tube main body 10. 140 are defined.

Gas discharge holes 151 to 1 are formed in the ceiling plate 142.
54 are provided at equal intervals of 90 °. The gas introducing pipes 111 to 114 are also provided at equal intervals of 90 ° along the circumferential surface of the reaction tube body 10, and are also provided on the outer circumferential surface of the reaction tube body 10 in the vertical direction along the generatrix direction. . The lower ends of the gas introduction pipes 111 to 114 are connected to the gas distribution chamber 140 via the gas discharge holes 151 to 154, respectively.
Is in communication with The upper ends, which are the downstream sides of the gas introduction pipes 111 to 114, are communicated with the shower chamber 42 provided at the upper part of the reaction tube main body 10 at a position divided into four equal parts. The inner diameter and the outer diameter of the gas introduction pipes 111 to 114 are the same as each other.
Has the same inner diameter as the gas outlet holes 151 to 154.

Below the gas introduction pipe 111 and at the lower end of the outer reaction pipe 141, a gas supply pipe 136 is provided.
It is provided in communication with 40. An exhaust pipe 51 is provided in communication near the lower end of the reaction tube body 10. The gas supply pipe 136 is connected to a reaction gas supply source (not shown), and the exhaust pipe 51 is connected to an exhaust device (not shown).

The boat 210 is moved up and down by a boat elevator (not shown), whereby the reaction tube body 10
It is introduced inside and taken out from the reaction tube body 10. The boat 210 is erected on the boat cap 60, and the boat cap 60 is provided on the furnace port cover 62. A flange 12 is provided around the lower end of the reaction tube body 10, and an O-ring 64 is sandwiched between the flange 12 and the furnace port lid 62.
0 is airtightly sealed.

The boat 210 is provided with four boat stanchions 212, and the boat stanchions 212 include a plurality of wafers 2.
00 are loaded in multiple stages in a horizontal posture, and wafers 20
O is oxidized in a state of being loaded in the boat 210, and an oxide film is formed on the surface thereof.

The wafer 22 is oxidized by the heater 22.
Oxygen gas is supplied to the gas supply pipe 136, while the wafer 200 and the wafer 200 are heated and maintained at the oxidation treatment temperature by 0.
The gas is supplied to the shower chamber 42 through the gas distribution chamber 140 and the gas introduction pipes 111 to 114, and is dispersedly supplied from the shower chamber 42 into the reaction tube body 10 through the gas dispersion holes 32 of the gas shower plate 30. The oxygen gas reacts with the wafer 200 to form an oxide film on the surface of the wafer 200.
The gas after the reaction is exhausted through the exhaust pipe 51.

The oxygen gas supplied from the gas supply pipe 136 is distributed by the gas distribution chamber 140, and the gas outlet 15
1 to 154, these gas outlet holes 1
The flow rates at 51 to 154 are fairly uniform or nearly the same. Gas outlet holes 151 to 154
In order to make the flow rate of the gas discharged from the gas distribution chambers the same, compared with the resistance of the gas discharge holes 151 to 154,
It is necessary to sufficiently reduce the resistance from the gas supply pipe 136, which is determined by the height A and the width B of 40, to the gas outlet holes 151 to 154.

In this embodiment, the oxygen gas whose flow rates are made substantially uniform or almost the same by the gas distribution chamber 140 and which are respectively discharged from the gas discharge holes 151 to 154 are equally divided around the reaction tube body 10. Since the gas is supplied to the shower chamber 42 by four gas introduction pipes 111 to 114 which are arranged and have the same inner diameter, the reaction pipe main body 10
Is substantially equalized, and there is no locally cooled portion in the surface of the wafer 200, and the uniformity of the oxide film formed by the thermal oxidation process is improved.

When the gas distribution chamber 140 is provided in this way, the wafers 20 mounted on the boat 210 are mounted.
It is preferably provided below the 0 position. In this way, temperature unevenness in the wafer processing area can be prevented.

In order for the gas distribution chamber 140 to function as a gas distribution chamber, it is not necessary to arrange it inside the heater 220 or the heat equalizing pipe 230, but it may be arranged outside the heater 220 or the heat equalizing pipe 230. .

Further, as shown in FIG. 1A, the gas distribution chamber 1
By arranging 40 in the heater 220 and the heat equalizing pipe 230, the gas distribution chamber 140 can function not only as a gas distribution chamber but also as a gas heating chamber for preheating gas, and the gas is supplied from the gas supply pipe 136. The gas is preheated before being introduced into the gas introduction pipes 111 to 114. As a result, the cooling effect of the gas flowing through the gas introduction pipes 111 to 114 is suppressed.

When the temperature of the gas is almost the same as the temperature of the inside of the furnace and the temperature of the wafer 200 before being sufficiently heated by the gas distribution chamber 140 and being introduced into the gas introducing pipes 111 to 114, Even if the gas introduction pipes 111 to 114 are not necessarily evenly arranged on the outer periphery of the reaction tube body 10, the temperature distribution in the plane of the wafer 200 becomes uniform, and as a result, the film thickness of the oxide film formed is also increased. It becomes uniform in the plane of the wafer 200.

Further, even when the temperature of the gas is not substantially the same as the temperature of the inside of the furnace and the temperature of the wafer 200 before being introduced into the gas introduction pipes 111 to 114 by the heating by the gas distribution chamber 140, Gas introduction pipe 111
The temperature inside the reaction tube body 10 and the temperature of the wafer 200 are almost the same as the temperature inside the reaction tube main body 10 and the temperature of the wafer 200 when they reach the shower chamber 42. In this case, it is preferable that the gas introduction pipes 111 to 114 are evenly arranged on the outer periphery of the reaction tube body 10.

In order to make the gas distribution chamber 140 also function as a heating chamber, the inside of the heater 220 and the soaking tube 23 are arranged.
The height of the gas distribution chamber 140 within 0 is approximately 200 to 400 m.
m is preferable. Further, even when the gas distribution chamber 140 is made to function as the gas heating chamber in this way, the gas distribution chamber 140 is used for the wafer 2 mounted on the boat 210.
It is preferably provided below the position 00. In this way, temperature unevenness in the wafer processing area can be prevented.

(Second Embodiment) FIG. 4A is a partially enlarged perspective view for explaining a reaction tube used in a semiconductor manufacturing apparatus according to a second embodiment of the present invention, and FIG.
FIG. 8 is a perspective view for explaining a porous material used in the semiconductor manufacturing apparatus according to the second embodiment of the present invention.

In the present embodiment, the ring-shaped porous material 300 is provided in the gas distribution chamber 140. By doing so, the gas supplied from the gas supply pipe 136 into the gas distribution chamber 140 is more uniformly distributed, and as a result, the flow rate of the gas introduced into the gas introduction pipes 111 to 114 becomes more uniform.

Also in the present embodiment, the gas distribution chamber 140 is arranged in the heater 220 and the heat equalizing tube 230 so that the gas distribution chamber 140 also functions as a gas heating chamber for preheating the gas. Since it takes time for the gas to pass through the porous material 300, by disposing the porous material 300 in the heater 220 and the heat equalizing tube 230, the porous material 300 is not provided in the gas distribution chamber 140. Compared with this, the effect of preheating gas is further enhanced.

(Third Embodiment) FIGS. 5A and 5B are cross-sectional views for explaining a reaction tube used in a semiconductor manufacturing apparatus according to a third embodiment of the present invention.

In the present embodiment, eight gas introduction pipes 115 are provided at equal intervals of 45 ° along the outer peripheral surface of the reaction tube body 10. The gas introduction pipe 115 is the ceiling plate 14.
2 through the gas outlet 143 provided in the gas distribution chamber 1
It communicates with 40. Eight gas lead-out holes 143 are provided at equal intervals of 45 ° along the outer circumference of the reaction tube body 10. The inner diameter of the gas inlet pipe 115 and the diameter of the gas outlet hole 143 are the same.

Also in this embodiment, the gas distribution chamber 140 is arranged in the heater 220 and the heat equalizing tube 230 so that the gas distribution chamber 140 also functions as a gas heating chamber for preheating the gas.

(Fourth Embodiment) FIGS. 6A and 6B are cross-sectional views for explaining a reaction tube used in a semiconductor manufacturing apparatus according to a fourth embodiment of the present invention.

In the present embodiment, six gas introduction pipes 161 to 166 are provided at equal intervals of 60 ° along the outer peripheral surface of the reaction tube body 10. The gas inlet pipes 161 to 166 are provided with gas outlet holes 171 provided in the ceiling plate 142.
Through 176 respectively, communicate with the gas distribution chamber 140. The six gas outlet holes 171 to 176 are also provided at regular intervals of 60 ° along the outer circumference of the reaction tube body 10.

Inner diameter of gas introducing pipe 161, gas introducing pipe 16
The inner diameter of 6 and the diameter of the gas outlet holes 171, 176 are the same. The inner diameter of the gas introduction pipe 162, the inner diameter of the gas introduction pipe 165, and the diameters of the gas outlet holes 172 and 175 are the same. The inner diameter of the gas introduction pipe 163, the inner diameter of the gas introduction pipe 164, and the diameters of the gas outlet holes 173 and 174 are the same.

The inner diameters of the gas inlet pipes 161 to 166 and the diameters of the gas outlet holes 171 to 176 are the same as those of the gas supply pipe 13.
It gets bigger as you move away from 6. Therefore, as compared with the case where the inner diameters of the gas introduction pipes 161 to 166 are all the same and the diameters of the gas discharge holes 171 to 176 are all the same, the flow rates of the gas flowing in the gas introduction pipes 161 to 166 are more uniform. As a result, the uniformity of the in-plane distribution of the oxide film formed by making the temperature distribution in the plane of the wafer more uniform is further improved.

Also in this embodiment, the gas distribution chamber 140 is arranged in the heater 220 and the heat equalizing tube 230 so that the gas distribution chamber 140 also functions as a gas heating chamber for preheating the gas.

(Fifth Embodiment) FIGS. 7A and 7B are sectional views for explaining a reaction tube used in a semiconductor manufacturing apparatus according to a fifth embodiment of the present invention.

In the present embodiment, eight gas introduction pipes 181 to 188 are provided along the outer peripheral surface of the reaction tube body 10, but the distance between the gas introduction pipes 181 to 188 is far from the gas supply pipe 136. It is getting narrower.
Therefore, as compared with the case where the intervals of the gas introducing pipes 181 to 188 are all the same, the effect of cooling by the gas flowing in the gas introducing pipes 181 to 188 is likely to be more uniform around the reaction tube body 10, and as a result, As a result, the uniformity of the in-plane distribution of the oxide film formed by making the temperature distribution in the plane of the wafer more uniform is further improved.

The gas introduction pipes 181 to 188 communicate with the gas distribution chamber 140 via gas discharge holes 191 to 198 provided in the ceiling plate 142, respectively. The interval between the eight gas outlet holes 191 to 198 is also the gas supply pipe 136.
It becomes narrower away from. Further, the inner diameters of the gas introducing pipes 181 to 188 and the diameters of the gas outlet holes 191 to 198 are the same.

Also in the present embodiment, the gas distribution chamber 140 is arranged inside the heater 220 and the heat equalizing tube 230 so that the gas distribution chamber 140 also functions as a gas heating chamber for preheating the gas.

(Sixth Embodiment) FIG. 8 is a sectional view for explaining a reaction tube used in a semiconductor manufacturing apparatus according to a sixth embodiment of the present invention.

In the present embodiment, the gas distribution chamber 34
Although 0 is provided inside the reaction tube body 10, it is different from the first embodiment, but the other points are the same.

The gas distribution chamber 340 is provided around the inner surface of the reaction tube body 10 along the circumferential surface of the reaction tube body 10 and has a predetermined length in the generatrix direction of the reaction tube body 10.

The reaction tube main body 10, a cylindrical gas distribution chamber inner side reaction tube 341 arranged concentrically with the reaction tube main body 10 inside the reaction tube main body 10, and the gas distribution chamber inner side reaction tube 34.
The gas distribution chamber includes a ceiling plate 342 provided between the upper end of the reaction tube body 10 and the reaction tube body 10, and a bottom plate 344 provided between the lower end of the reaction tube 341 inside the gas distribution chamber and the reaction tube body 10. 340 are defined.

The ceiling plate 342 has gas introduction pipes 111 to 1
One end portions of 14 are provided so as to communicate with each other. The gas introduction tubes 111 to 114 are provided at equal intervals along the inner circumferential surface of the reaction tube body 10 at 90 ° intervals, and are provided on the inner circumferential surface of the reaction tube body 10 in the vertical direction along the generatrix direction. ing.

As described above, by providing the gas distribution chamber 340 and the gas introduction pipes 111 to 114 inside the reaction tube body 10, cleaning of the reaction tube 100 and the like become easy. That is, by providing the gas introduction pipes 111 to 114 inside the reaction tube body 10, the side wall of the reaction tube 100 is supported by a supporting member such as a roller and immersed in the cleaning chemical solution to clean the reaction tube 100 while rotating it. In case of gas introduction pipe 1
The reaction tube 100 rotates smoothly without causing 11 to 114 to hit or be caught by the support member.
Also, it can be prevented from being damaged. In addition, the gas distribution chamber 34
If 0 is provided inside the reaction tube body 10, the gas distribution chamber 34
0 and the reaction tube main body 10 have no step difference, and the reaction tube 10
0 will rotate smoothly.

In the present embodiment as well, the gas distribution chamber 340 is arranged in the heater 220 and the heat equalizing tube 230 so that the gas distribution chamber 340 also functions as a gas heating chamber for preheating the gas.

Although a predetermined number of gas introduction pipes are provided in each of the above-described embodiments, the number of gas introduction pipes may be two, three, four or five or more as required. In addition, one gas introduction pipe may be branched into a plurality of parts so that the gas flows out from the equally divided portions around the gas shower plate 30.
It may be directly introduced into the reaction tube body 10 without going through.

Further, in each of the above-mentioned embodiments, since a plurality of gas introduction pipes and distribution chambers are attached to the reaction tube body, the production cost is low and the weight is not so heavy. Instead, it is easy for workers to carry and install during maintenance, improving safety. In addition, in the case of the full double tube structure shown in FIG. 15, the weight of the reaction tube was about 18 kg, whereas in the first to sixth embodiments using the distribution chamber, the reaction tube Weight is about 12.
The weight was 4 kg, and the weight could be reduced by about 30%.

(Seventh Embodiment) FIG. 9 is a view for explaining a semiconductor manufacturing apparatus according to a seventh embodiment of the present invention. FIG. 9A is a vertical sectional view taken along line Y9-Y9 of FIG. 9B. And
9B is a cross-sectional view taken along line X9-X9 of FIG. 9A.

In this semiconductor manufacturing apparatus 1, a soaking tube 230 is provided in the hollow heater 220, and the soaking tube 23 is provided.
A reaction tube 500 is provided in the zero. The soaking tube 230 is made of a material having a large heat capacity (for example, SiC).

The reaction tube 500 has a double tube structure and is provided with a hollow inner reaction tube 510, a hollow outer reaction tube 520, a resistance plate 642 and a gas distribution chamber 640.

The inner reaction tube 510 has a columnar shape and has a ceiling plate 5.
14 are provided. The outer reaction tube 520 also has a cylindrical shape and includes a ceiling plate 540 and a bottom plate 522. Inner reaction tube 51
0 and the outer reaction tube 520 are concentrically arranged, and the side wall 511 of the inner reaction tube 510 and the side wall 52 of the outer reaction tube 520.
A gas guiding space 550 is defined between the ceiling plate 514 of the inner reaction tube 510 and the ceiling plate 5 of the outer reaction tube 520.
A gas guiding space 560 is defined between the
The gas guiding space 550 and the gas guiding space 560 are in communication with each other. The central portion of the ceiling plate 514 of the inner reaction tube 510 is a gas shower plate 530 provided with a plurality of gas dispersion holes 532, and the gas guide space 560 is a gas shower plate 43.
0 to the inside of the inner reaction tube 510. The lower end of the outer reaction tube 520 has a bottom plate 52 of the outer reaction tube 520.
2 is closed by terminating at the side wall 511 of the inner reaction tube 510.

The resistance plate 642 has a ring shape, the outer side of which is fixed to the side wall 521 of the outer reaction tube 520 and the inner side of which is the side wall of the inner reaction tube 510 at a position at a distance C in the vertical direction from the lower end of the outer reaction tube 520. It is fixed to 511. A gas distribution chamber 640 is defined by the resistance plate 642, the side wall 511 of the inner reaction tube 510, the side wall 521 of the outer reaction tube 520, and the bottom plate 522.

In the resistance plate 642, there are four gas outlet holes 643.
They are provided at equal intervals of 5 °. Gas outlet 643
Have the same diameter. The gas distribution chamber 640 communicates with the gas guiding space 550 through the gas outlet hole 643 of the resistance plate 642.

A gas supply pipe 636 is provided at the lower end of the outer reaction pipe 520 so as to communicate with the gas distribution chamber 640.
An exhaust pipe 651 is provided in communication near the lower end of the inner reaction pipe 510. The gas supply pipe 636 is connected to a reaction gas supply source (not shown), and the exhaust pipe 651 is connected to an exhaust device (not shown).

The boat 210 is moved up and down by a boat elevator (not shown), whereby the inner reaction tube 51
It is designed to be introduced into the inner tube 0 and taken out from the inner reaction tube 510. The boat 210 is erected on the boat cap 60, and the boat cap 60 is provided on the furnace port cover 62. A flange 512 is provided around the lower end of the inner reaction tube 510, and an O-ring 64 is sandwiched between the flange 512 and the furnace port lid 62 to hermetically seal the inner reaction tube 510.

The boat 210 is provided with four boat stanchions 212, and the boat stanchions 212 include a plurality of wafers 2.
00 are loaded in multiple stages in a horizontal posture, and wafers 20
O is oxidized in a state of being loaded in the boat 210, and an oxide film is formed on the surface thereof.

The wafer 22 is oxidized by the heater 22.
Oxygen gas is supplied to the gas supply pipe 636 in a state where the inside of the furnace and the wafer 200 are heated and held at the oxidation treatment temperature by 0.
The gas is distributed and supplied into the inner reaction tube 510 through the gas distribution chamber 640, the gas induction spaces 550 and 560, and the gas distribution holes 532 of the gas shower plate 530. Oxygen gas and wafer 2
00 reacts with each other to form an oxide film on the surface of the wafer 200. The gas after the reaction is exhausted through the exhaust pipe 651.

The oxygen gas supplied from the gas supply pipe 636 is distributed by the gas distribution chamber 640, and the gas outlet hole 64 is formed.
When reaching 3, the flow rates in these gas outlet holes 643 are considerably equalized or almost the same. In order to make the flow rate of the gas led out from the gas lead-out hole 643 the same, the gas lead-out from the gas supply pipe 636 determined by the height C and the width D of the gas distribution chamber 640 as compared with the resistance of the gas lead-out hole 643. It is necessary to sufficiently reduce the resistance up to the hole 643.

In the present embodiment, the oxygen distribution gas 640 has a substantially uniform flow rate or substantially the same flow rate, and the oxygen gas discharged from the gas discharge holes 643 is the same around the outside of the inner reaction tube 510. Since the gas guiding space 550 having a width is supplied to the gas guiding space 560 above the inner reaction tube 510, the circumference of the inner reaction tube 510 becomes a substantially equal condition, and the wafer 200 is locally cooled in the plane. The removed portion is eliminated, and the uniformity of the oxide film formed by the thermal oxidation process is improved.

When the gas distribution chamber 640 is defined by the resistance plate 642 as described above, the resistance plate 642 is preferably provided below the position of the wafer 200 mounted on the boat 210. In this way, temperature unevenness in the wafer processing area can be prevented.

In order for the gas distribution chamber 640 to function as a gas distribution chamber, it is not necessary to arrange it inside the heater 220 or the heat equalizing pipe 230, but it may be arranged outside the heater 220 or the heat equalizing pipe 230. .

Further, by disposing the gas distribution chamber 640 inside the heater 220 and the heat equalizing tube 230 as in the present embodiment, the gas distribution chamber 640 is not only used as a gas distribution chamber, but is also heated by preheating the gas. The gas supplied from the gas supply pipe 636 can also function as a chamber.
It is preheated before being introduced into the gas induction space 550. As a result, the cooling effect of the gas flowing in the gas guiding space 550 is suppressed.

Even when the gas distribution chamber 640 functions as a gas heating chamber as described above, the resistance plate 642 is
It is preferably provided below the position of the wafer 200 mounted on the boat 210. In this way, temperature unevenness in the wafer processing area can be prevented.

Also in the double-tube structure reaction tube 500, the oxygen gas introduced from the gas supply tube 636 at a temperature near room temperature has an inner reaction tube 510 and an outer reaction tube 520.
Is heated while passing through the gas induction spaces 550 and 560 between the inner reaction tube 5 and the gas shower plate 530.
The temperature inside 10 and the temperature of the wafer 200 become almost the same, and the temperature is introduced into the inner reaction tube 510.

(Eighth Embodiment) FIG. 10 is a cross-sectional view for explaining a reaction tube used in a semiconductor manufacturing apparatus according to an eighth embodiment of the present invention.

In this embodiment, the six gas outlet holes 671 to 676 are formed in the resistance plate 642 and the inner reaction tube 51 is formed.
They are provided at regular intervals of 60 ° along the outer circumference of 0. The gas distribution chamber 640 communicates with the gas guide space 550 through the gas outlet holes 671 to 676.

The gas outlet holes 671 and 676 have the same diameter. The gas outlet holes 672 and 675 have the same diameter.
The gas outlet holes 673 and 674 have the same diameter. The diameters of the gas outlet holes 671 to 676 increase as the distance from the gas supply pipe 636 increases. Therefore, as compared with the case where the diameters of the gas outlets 671 to 676 are all the same, the gas outlet spaces 671 to 676 are separated from the gas outlet spaces 55.
The flow rate of the gas discharged to 0 becomes more uniform, and as a result, the flow rate of the gas flowing through the gas guiding space 550 becomes more uniform. Therefore, the uniformity of the in-plane distribution of the oxide film formed by making the temperature distribution in the plane of the wafer more uniform is further improved.

Note that, also in this embodiment, the resistance plate 6
42 is arranged in the heater 220 and the heat equalizing tube 230,
The gas distribution chamber 640 also functions as a gas heating chamber for preheating the gas.

(Ninth Embodiment) FIG. 11 is a cross sectional view for explaining a reaction tube used in a semiconductor manufacturing apparatus according to a ninth embodiment of the present invention.

In the present embodiment, eight gas outlet holes 691 to 698 are provided along the outer peripheral surface of the inner reaction tube 510, but the distance between the gas outlet holes 691 to 698 is far from the gas supply pipe 636. It is getting narrower. Therefore, as compared with the case where the intervals of the gas outlet holes 691 to 698 are all the same, the gas outlet holes 691 to 698.
From the gas guiding space 550 to the gas guiding space 55
The effect of cooling by the gas flowing through 0 becomes more uniform around the inner reaction tube 510, and as a result, the temperature distribution in the plane of the wafer becomes more uniform, and the in-plane distribution of the oxide film formed is uniform. Sex is improved. In the present embodiment, the gas outlet holes 691 to 698 have the same diameter.

Also in the present embodiment, the resistance plate 6
42 is arranged in the heater 220 and the heat equalizing tube 230,
The gas distribution chamber 640 also functions as a gas heating chamber for preheating the gas.

(Tenth Embodiment) FIG. 12 is a diagram for explaining a semiconductor manufacturing apparatus according to a tenth embodiment of the present invention, FIG. 12A is a vertical sectional view, and FIG. 12B is a book. It is a perspective view for explaining the porous material used in the semiconductor manufacturing device of a 10th embodiment of the invention.

In this embodiment, the ring-shaped porous material 662 is attached to the side surface 521 of the outer reaction tube 520 at the position E vertically from the lower end of the outer reaction tube 520.
And the side surface 511 of the inner reaction tube 510.
A gas distribution chamber 660 is defined by the porous material 662, the side wall 511 of the inner reaction tube 510, the side wall 521 of the outer reaction tube 520, and the bottom plate 522. The gas distribution chamber 660 communicates with the gas guiding space 550 via the porous material 662. By thus providing the porous material 662,
The gas supplied from the gas supply pipe 636 into the gas distribution chamber 660 is uniformly distributed and led out into the gas guiding space 550. As a result, the flow rate of the gas flowing through the gas guiding space 550 becomes more uniform. Therefore, the uniformity of the in-plane distribution of the oxide film formed by making the temperature distribution in the plane of the wafer more uniform is further improved.

Also in this embodiment, the porous material 662 is arranged in the heater 220 and the heat equalizing tube 230 so that the gas distribution chamber 660 also functions as a gas heating chamber for preheating the gas.

(Eleventh Embodiment) FIG. 13 is a view for explaining a semiconductor manufacturing apparatus according to an eleventh embodiment of the present invention. FIG. 13A is a sectional view taken along line Y13-Y13 of FIG. 13B. FIG. 13B is a cross-sectional view taken along line X13-X13 of FIG. 13A.

In the seventh embodiment, the resistance plate 64
2 is used to define the distribution chamber 640, and one gas supply pipe 636 is connected to the lower end portion of the distribution chamber 640. However, in the present embodiment, four gas supply pipes 631 to 634 are used.
To the side wall 511 of the inner reaction tube 510 and the outer reaction tube 520.
It is different from the seventh embodiment in that it is provided at the lower end of the gas guiding space 550 defined between the side wall 521 and the side wall 521 so as to be communicated at regular intervals of 90 °, but the other points are the same. .

In the present embodiment, the outer reaction tube 52
Gas supply pipes 631 to 634 evenly arranged around 0
Accordingly, the side wall 511 of the inner reaction tube 510 and the outer reaction tube 5
Gas guide space 55 defined between the side wall 521 and the side wall 521
Since oxygen gas is supplied to the lower end of 0, the inner reaction tube 5
The periphery of 10 becomes a substantially equal condition, and there is no locally cooled portion in the wafer surface. Therefore, the uniformity of the in-plane distribution of the oxide film formed by making the temperature distribution in the plane of the wafer more uniform is further improved.

In each of the above embodiments, the number of gas supply pipes communicating with the gas distribution chambers 140, 340, 640, 660 is one, but a plurality of gas supply pipes are connected to the gas distribution chambers. May improve the uniformity. When a plurality of gas supply pipes are provided in this way, it is preferable to dispose the plurality of gas supply pipes in equal parts in order to improve uniformity.

Further, in each of the above-mentioned embodiments, the dry oxidation treatment with oxygen gas has been described, but the same effects can be obtained with respect to various treatments of semiconductor wafers such as wet oxidation by the pyrogenic method, phosphorus diffusion, and various heat treatments.

[0112]

According to the present invention, since the uniformity of the temperature distribution in the reaction tube is improved, it is possible to improve the uniformity of the temperature distribution in the plane of the object to be processed such as a wafer.
The uniformity of the oxide film thickness and the like formed on the object to be processed such as a wafer is improved, which in turn improves the uniformity of device characteristics and improves the yield.

[Brief description of drawings]

1A and 1B are views for explaining a semiconductor manufacturing apparatus according to a first embodiment of the present invention, FIG. 1A is a vertical cross-sectional view, and FIG. 1B is a cross-sectional view taken along line X1-X1 of FIG. 1A. is there.

FIG. 2 is a perspective view for explaining a reaction tube used in the semiconductor manufacturing apparatus according to the first embodiment of the present invention.

FIG. 3 is a partial enlarged perspective view for explaining a reaction tube used in the semiconductor manufacturing apparatus according to the first embodiment of the present invention.

FIG. 4 is a diagram for explaining a reaction tube used in the semiconductor manufacturing apparatus according to the second embodiment of the present invention, FIG. 2A is a partially enlarged perspective view of the reaction tube, and FIG. 2B is the present invention. FIG. 7 is a perspective view for explaining a porous material used in the semiconductor manufacturing apparatus of the second embodiment of FIG.

FIG. 5 is a transverse cross-sectional view for explaining a reaction tube used in a semiconductor manufacturing device according to a third embodiment of the present invention.

FIG. 6 is a transverse cross-sectional view for explaining a reaction tube used in a semiconductor manufacturing device according to a fourth embodiment of the present invention.

FIG. 7 is a transverse cross-sectional view for explaining a reaction tube used in a semiconductor manufacturing apparatus according to a fifth embodiment of the present invention.

FIG. 8 is a transverse cross-sectional view for explaining a reaction tube used in a semiconductor manufacturing device according to a sixth embodiment of the present invention.

FIG. 9 is a diagram for explaining a semiconductor manufacturing apparatus according to a seventh embodiment of the present invention, and FIG. 9A is Y9-Y9 of FIG. 9B.
9B is a cross-sectional view taken along the line X9-X9 in FIG. 9A.

FIG. 10 is a transverse cross-sectional view for explaining a reaction tube used in a semiconductor manufacturing device according to an eighth embodiment of the present invention.

FIG. 11 is a transverse cross-sectional view for explaining a reaction tube used in a semiconductor manufacturing device according to a ninth embodiment of the present invention.

FIG. 12 is a diagram for explaining a semiconductor manufacturing apparatus according to a tenth embodiment of the present invention, FIG. 12A is a vertical cross-sectional view, and FIG. 12B is a semiconductor manufacturing apparatus according to the tenth embodiment of the present invention. It is a perspective view for explaining the porous material used in the device.

FIG. 13 is a diagram for explaining the semiconductor manufacturing apparatus according to the eleventh embodiment of the present invention, in which FIG. 13A is Y of FIG. 13B.
13 is a sectional view taken along line 13-Y13, and FIG. 13B is a sectional view taken along line X13-X13 in FIG. 13A.

14A and 14B are views for explaining a conventional semiconductor manufacturing apparatus, FIG. 14A is a vertical cross-sectional view, and FIG. 14B is X in FIG. 14A.
FIG. 14 is a sectional view taken along line 14-X14.

FIG. 15 is a perspective view for explaining a reaction tube used in a conventional semiconductor manufacturing apparatus.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor manufacturing apparatus 10 ... Reaction tube main body 12, 512 ... Flange 14, 142, 342, 414, 440, 514, 54
0 ... Ceiling board 20,111-115,161-166,181-18
8 ... Gas introduction pipe 21 ... Gas introduction pipe Gas introduction part 30, 430, 530 ... Gas shower plate 32, 432, 532 ... Gas dispersion hole 40 ... Upper gas introduction pipe 42 ... Shower chamber 50, 51, 651, 652 ... Exhaust Pipes 100, 400, 500 ... Reaction pipes 136, 421, 631-634, 636 ... Gas supply pipes 140, 340, 640, 660 ... Gas distribution chamber 141 ... Gas distribution chamber outside reaction pipes 143, 151-154, 171-176 , 191-1
98, 643, 671 to 676, 691 to 698 ... Gas outlet hole 144, 344 ... Bottom plate 200 ... Wafer 210 ... Boat 220 ... Heater 230 ... Soaking tube 300, 662 ... Porous material 341 ... Gas distribution chamber inner side reaction tube 410, 510 ... Inner reaction tube 420, 520 ... Outer reaction tube 550, 560 ... Gas induction space 450 ... Region where gas hardly flows 642.

Claims (18)

[Claims] 1. A heating means, a reaction tube provided in the heating means, the reaction tube having a gas introduction part and an exhaust part separated from each other by a predetermined distance in a longitudinal direction of the reaction tube, and the exhaust gas. A gas supply pipe provided on the side of the reaction chamber, a gas distribution unit provided on the side of the exhaust unit, the gas distribution unit distributing the gas supplied from the gas supply pipe in the circumferential direction of the reaction tube, Gas guiding means extending from the gas distributing means to the gas introducing portion along the side wall of the reaction tube, and guiding the gas distributed in the circumferential direction of the reaction tube by the gas distributing means to the gas introducing portion; A semiconductor manufacturing apparatus comprising: 2. The semiconductor manufacturing apparatus according to claim 1, further comprising substrate holding means capable of holding the main surface of the substrate to be processed in the reaction tube substantially at right angles to the longitudinal direction. 3. A plurality of substrates to be processed can be stacked and held in the reaction tube in the longitudinal direction, and the main surfaces of the plurality of substrates to be processed are substantially aligned in the longitudinal direction. The semiconductor manufacturing apparatus according to claim 1, further comprising substrate holding means capable of holding each at a right angle. 4. The semiconductor manufacturing apparatus according to claim 1, wherein the reaction tube has a circular cross section. 5. The gas distribution means is a gas distribution chamber provided on the exhaust section side along a side wall of the reaction tube, and is provided around the reaction tube along a circumferential surface of the reaction tube. Is a gas distribution chamber having a predetermined length in the longitudinal direction, and is resistant to the flow of gas at one end of the distribution chamber on the gas introduction part side in the longitudinal direction. A resistance means is provided, and the gas supply pipe communicates with the gas distribution chamber at a position spaced from the one end of the distribution chamber by a predetermined distance toward the other end of the distribution chamber in the longitudinal direction. The semiconductor manufacturing apparatus according to claim 4, wherein the semiconductor manufacturing apparatus is provided. 6. A reaction tube for a distribution chamber, which is arranged concentrically with the reaction tube and has a circular cross section, wherein both side walls of the distribution chamber are the reaction tube and the reaction for the distribution chamber. The semiconductor manufacturing apparatus according to claim 5, wherein the semiconductor manufacturing apparatus is configured by a pipe. 7. The resistance means is a ring-shaped plate provided with a plurality of gas lead-out holes, and the ring-shaped plate is provided between the reaction tube and the reaction tube for the distribution chamber. 7. The semiconductor manufacturing apparatus according to claim 6, wherein. 8. The semiconductor manufacturing apparatus according to claim 7, wherein the plurality of gas outlet holes are provided at substantially equal intervals around the reaction tube. 9. The semiconductor manufacturing apparatus according to claim 7, wherein the plurality of gas outlet holes are increased in size with increasing distance from the gas supply pipe. 10. The semiconductor manufacturing apparatus according to claim 7, wherein the distance between the plurality of gas outlet holes becomes narrower as the distance from the gas supply pipe increases. 11. The semiconductor manufacturing according to claim 5, further comprising a porous material provided in the distribution chamber between the resistance means and the gas supply pipe. apparatus. 12. The semiconductor manufacturing according to claim 6, wherein the resistance means is a porous material, and the porous material is provided between the reaction tube and the reaction tube for the distribution chamber. apparatus. 13. The gas guiding means is a gas guiding space defined between the reaction tube and a second reaction tube concentrically provided. The semiconductor manufacturing apparatus as described in any one. 14. The semiconductor manufacturing apparatus according to claim 1, wherein at least one of the gas distribution unit and the gas guiding unit is provided inside the reaction tube. 15. A heating means, a first reaction tube provided in the heating means, and having a gas introduction part and an exhaust part separated from each other by a predetermined distance in a longitudinal direction of the first reaction tube. A first reaction tube, a second reaction tube concentrically provided with the first reaction tube, a first reaction tube and a second reaction tube, and the gas introduction A gas space communicating with a section, a gas dispersion unit provided on the exhaust unit side between the first reaction tube and the second reaction tube, and the gas dispersion unit, A semiconductor manufacturing apparatus, comprising: a gas supply pipe provided on the side opposite to the gas introduction portion in the longitudinal direction so as to communicate with the gas space. 16. The gas dispersion means is a plate provided with a plurality of gas outlet holes, and the plate is provided between the first reaction tube and the second reaction tube. 16. The semiconductor manufacturing apparatus according to claim 15, which is characterized in that. 17. The gas distributing means is a porous material, and the porous material is provided between the first reaction tube and the second reaction tube. The semiconductor manufacturing apparatus described. 18. A heating means, a first reaction tube provided in the heating means, and having a gas introduction part and an exhaust part separated from each other by a predetermined distance in a longitudinal direction of the first reaction tube. A first reaction tube, a second reaction tube concentrically provided with the first reaction tube, a first reaction tube and a second reaction tube, and the gas introduction A gas space communicating with the gas chamber, and a plurality of gas supply pipes communicating with the gas space at substantially equidistant positions around the second reaction pipe on the exhaust unit side. A semiconductor manufacturing apparatus characterized by the above.