JP2006203243A - Semiconductor manufacturing apparatus - Google Patents

Semiconductor manufacturing apparatus Download PDF

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JP2006203243A
JP2006203243A JP2006084283A JP2006084283A JP2006203243A JP 2006203243 A JP2006203243 A JP 2006203243A JP 2006084283 A JP2006084283 A JP 2006084283A JP 2006084283 A JP2006084283 A JP 2006084283A JP 2006203243 A JP2006203243 A JP 2006203243A
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reaction tube
manifold
single reaction
tube
boat
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JP4532427B2 (en
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Makoto Sanbe
誠 三部
Yasuhiro Inokuchi
泰啓 井ノ口
Atsushi Moriya
敦 森谷
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Hitachi Kokusai Electric Inc
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Hitachi Kokusai Electric Inc
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<P>PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus capable of forming a high quality film in a highly clean atmosphere and improving thickness uniformity. <P>SOLUTION: In an outer tube 10, a boat 30 is provided to load a plurality of laminated semiconductor wafers (not shown). By preparing a cone portion 13 between a flange 14 and a body portion 12 for attaching the outer tube 10 to a manifold 40, making an inner diameter of the body portion 12 smaller, and making a distance shorter from the boat 30 holding wafers, uniformity of dopant concentration and uniformity of the film thickness are improved. By establishing a nozzle 21 to introduce a material gas onto the boat 30 between the outer tube 10 and boat 30, and by making a reactant gas flow from top to bottom in the outer tube 10, smearing of the lower part of a furnace into a reactor is prevented. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、半導体製造装置に関し、特に、複数の半導体ウエハを垂直方向に積層した状態で半導体ウエハの処理を行う縦型の反応室構成を備える半導体製造装置に関するものである。   The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a semiconductor manufacturing apparatus having a vertical reaction chamber configuration for processing a semiconductor wafer in a state where a plurality of semiconductor wafers are stacked in a vertical direction.

従来の半導体製造装置１００の構成例を図２に示す。
この従来の縦型半導体製造装置１００においては、アウターチューブ１１０の外部にヒータ（図示せず）を備えており、アウターチューブ１１０内を均一に加熱できる構造となっている。アウターチューブ１１０内には筒状のインナーチューブ１２０が設けられている。インナーチューブ１２０内には、複数の半導体ウェーハ（図示せず）を垂直方向に積層して搭載するボート３０が設けられている。このボート３０は、ボート台３２上に搭載されている。 A configuration example of a conventional semiconductor manufacturing apparatus 100 is shown in FIG.
In this conventional vertical semiconductor manufacturing apparatus 100, a heater (not shown) is provided outside the outer tube 110 so that the inside of the outer tube 110 can be heated uniformly. A cylindrical inner tube 120 is provided in the outer tube 110. In the inner tube 120, a boat 30 is provided on which a plurality of semiconductor wafers (not shown) are stacked and mounted in the vertical direction. The boat 30 is mounted on a boat table 32.

縦型半導体製造装置１００は、マニホールド４０を備えている。アウターチューブ１１０は、マニホールド４０の上部に取り付けられている。マニホールド４０の上部には、フランジ４３が設けられ、フランジ４３と取り付け部材４４とにより、アウターチューブ１１０の下部のフランジ部１１３とマニホールド４０のフランジ４３とをこれらの間にＯ−リング（オーリング）４５を介して固定している。マニホールド４０の内側には、インナーチューブ取り付け部材４６が設けられ、インナーチューブ１２０がこのインナーチューブ取り付け部材４６上に載置されている。アウターチューブ１１０の下部は開放された構造となっており、インナーチューブ１２０の上部および下部は開放された構造となっている。   The vertical semiconductor manufacturing apparatus 100 includes a manifold 40. The outer tube 110 is attached to the upper part of the manifold 40. A flange 43 is provided in the upper part of the manifold 40, and the flange 43 and the attachment member 44 allow the flange 113 of the lower part of the outer tube 110 and the flange 43 of the manifold 40 to be O-ring (O-ring) between them. 45 is fixed. An inner tube attachment member 46 is provided inside the manifold 40, and the inner tube 120 is placed on the inner tube attachment member 46. The lower part of the outer tube 110 has an open structure, and the upper part and the lower part of the inner tube 120 have an open structure.

マニホールド４０の側壁にはガス導入ポート２２が貫通して取り付けられ、そのマニホールド４０の内側端部には、ノズル２３が取り付けられている。また、排気管４２もマニホールド４０の側壁を貫通して取り付けられている。   A gas introduction port 22 is attached through the side wall of the manifold 40, and a nozzle 23 is attached to the inner end of the manifold 40. The exhaust pipe 42 is also attached through the side wall of the manifold 40.

マニホールド４０の下端は開放された構造となっているが、ベースフランジ５１，シールキャップ５２により閉じられ、気密な構造となっている。   Although the lower end of the manifold 40 has an open structure, it is closed by a base flange 51 and a seal cap 52 and has an airtight structure.

インナーチューブ１２０の下部からノズル２３がインナーチューブ１２０内に挿入されている。ノズル２３から供給された原料ガスは、インナーチューブ１２０内に噴出され、インナーチューブ１２０内を上部まで移動し、インナーチューブ１２０とアウターチューブ１１０との間の空間を通って下方に流れ、排気管４２から排気される。   A nozzle 23 is inserted into the inner tube 120 from the lower portion of the inner tube 120. The raw material gas supplied from the nozzle 23 is jetted into the inner tube 120, moves to the upper part in the inner tube 120, flows downward through the space between the inner tube 120 and the outer tube 110, and the exhaust pipe 42. Exhausted from.

従来、半導体ウェーハ（図示せず）上に形成される膜厚の均一性を向上するため、インナーチューブ１２０の径を小さくして、半導体ウェーハを保持するボート３０と、インナーチューブ１２０の壁面との距離を短くして原料ガスを下から上へ流す構成としていたが、高清浄プロセス（例えば、エピタキシャル成長等）の場合、炉下部からの汚染が原料ガスの流れに沿って反応室（インナーチューブ１２０）内を汚染し、高品質な膜が得られないという問題があった。   Conventionally, in order to improve the uniformity of the film thickness formed on a semiconductor wafer (not shown), the diameter of the inner tube 120 is reduced, the boat 30 holding the semiconductor wafer, and the wall surface of the inner tube 120 In the case of a highly clean process (for example, epitaxial growth, etc.), contamination from the lower part of the furnace follows the flow of the source gas in the reaction chamber (inner tube 120). There was a problem that the inside was contaminated and a high quality film could not be obtained.

従って、本発明の主な目的は、上記従来技術の問題点を解決して、高清浄雰囲気で良質な膜を生成し、膜厚均一性を向上することのできる半導体製造装置を提供することにある。   Accordingly, a main object of the present invention is to provide a semiconductor manufacturing apparatus capable of solving the above-described problems of the prior art, generating a high-quality film in a highly clean atmosphere, and improving film thickness uniformity. is there.

本発明の一態様によれば、
一重の反応管と、内側反応管と外側反応管とを有する二重構造の反応管とを、前記一重の反応管または前記二重構造の反応管の前記内側反応管内に載置される半導体ウェーハの処理の内容に応じてそれぞれ載置可能なマニホールドを備え、
前記一重の反応管は、前記一重の反応管の胴体部と前記一重の反応管を前記マニホールドに取り付ける前記一重の反応管のフランジ部との間に、径が前記胴体部の上側で小さく、フランジ部側で大きくなる傾斜部を具備し、
前記一重の反応管を前記マニホールドに載置した際の前記一重の反応管の内壁の位置は、前記二重構造の反応管を前記マニホールドに載置した際の前記外側反応管の内壁の位置よりも内側に位置するように、前記一重の反応管および前記二重構造の反応管が前記マニホールドに載置されることを特徴とする半導体製造装置が提供される。 According to one aspect of the invention,
A semiconductor wafer in which a single reaction tube and a dual structure reaction tube having an inner reaction tube and an outer reaction tube are mounted in the single reaction tube or the inner reaction tube of the dual structure reaction tube. It is equipped with a manifold that can be placed according to the processing content of
The single reaction tube has a small diameter on the upper side of the body portion between a body portion of the single reaction tube and a flange portion of the single reaction tube to which the single reaction tube is attached to the manifold. It has an inclined part that becomes larger on the part side,
The position of the inner wall of the single reaction tube when the single reaction tube is placed on the manifold is different from the position of the inner wall of the outer reaction tube when the double structure reaction tube is placed on the manifold. The single reaction tube and the dual structure reaction tube are placed on the manifold so as to be located on the inner side of the semiconductor manufacturing apparatus.

本発明の一態様によれば、
一重の反応管と、内側反応管と外側反応管とを有する二重構造の反応管とを、前記一重の反応管または前記二重構造の反応管の前記内側反応管内に載置される半導体ウェーハの処理の内容に応じてそれぞれ載置可能なマニホールドを備え、
前記一重の反応管は、前記一重の反応管の胴体部と前記一重の反応管を前記マニホールドに取り付ける前記一重の反応管のフランジ部との間に、径が前記胴体部の上側で小さく、フランジ部側で大きくなる傾斜部を具備し、
前記マニホールドに排気口を設け、前記一重の反応管を前記マニホールドに載置して前記半導体ウェーハを処理する際に、反応ガスを前記一重の反応管の上部から前記排気口に流れるようにしたことを特徴とする半導体製造装置が提供される。 According to one aspect of the invention,
A semiconductor wafer in which a single reaction tube and a dual structure reaction tube having an inner reaction tube and an outer reaction tube are mounted in the single reaction tube or the inner reaction tube of the dual structure reaction tube. It is equipped with a manifold that can be placed according to the processing content of
The single reaction tube has a small diameter on the upper side of the body portion between a body portion of the single reaction tube and a flange portion of the single reaction tube to which the single reaction tube is attached to the manifold. It has an inclined part that becomes larger on the part side,
An exhaust port is provided in the manifold, and when the single reaction tube is placed on the manifold and the semiconductor wafer is processed, a reaction gas flows from the upper portion of the single reaction tube to the exhaust port. A semiconductor manufacturing apparatus is provided.

本発明の一態様によれば、
マニホールドに一重の反応管を載置した状態で、前記反応管内にてボートに載置された半導体ウェーハの処理を行う半導体製造装置であって、
前記マニホールドは、処理内容に応じて、前記一重の反応管と、内側反応管と外側反応管とから成る二重構造の反応管とをそれぞれ載置可能であって、前記マニホールドに前記二重構造の反応管を載置した際の前記内側反応管の内壁とボートとの距離と、前記マニホールドに前記一重の反応管を載置した際の前記一重の反応管の内壁とボートとの距離とを同じとするため、
前記一重の反応管は、
前記一重の反応管の胴体部と反応管を前記マニホールドに取り付ける反応管のフランジ部との間に、径が胴体部上側で小さく、フランジ部側で大きくなる傾斜部を具備したことを特徴とする半導体製造装置が提供される。 According to one aspect of the invention,
A semiconductor manufacturing apparatus for processing a semiconductor wafer mounted on a boat in the reaction tube in a state where a single reaction tube is mounted on a manifold,
The manifold can be mounted with the single reaction tube and a double-structured reaction tube composed of an inner reaction tube and an outer reaction tube, respectively, depending on the contents of processing. The distance between the inner wall of the inner reaction tube and the boat when the reaction tube is mounted, and the distance between the inner wall of the single reaction tube and the boat when the single reaction tube is mounted on the manifold. To be the same,
The single reaction tube is
Between the body portion of the single reaction tube and the flange portion of the reaction tube that attaches the reaction tube to the manifold, an inclined portion having a small diameter on the upper side of the body portion and larger on the flange portion side is provided. A semiconductor manufacturing apparatus is provided.

本発明の一態様によれば、
一重の反応管と、内側反応管と外側反応管とを有する二重構造の反応管とを、前記一重の反応管または前記二重構造の反応管の前記内側反応管内に載置される半導体ウェーハの処理の内容に応じてそれぞれ載置可能なマニホールドを備え、
前記一重の反応管は、前記一重の反応管の胴体部と前記一重の反応管を前記マニホールドに取り付ける前記一重の反応管のフランジ部との間に、径が前記胴体部の上側で小さく、フランジ部側で大きくなる傾斜部を具備し、
前記一重の反応管の前記フランジ部の外径と前記二重構造の反応管の前記外側反応管のフランジ部の外径とを同一とし、前記一重の反応管と前記二重構造の反応管とを前記マニホールドに交換設置可能にしたことを特徴とする半導体製造装置が提供される。 According to one aspect of the invention,
A semiconductor wafer in which a single reaction tube and a dual structure reaction tube having an inner reaction tube and an outer reaction tube are mounted in the single reaction tube or the inner reaction tube of the dual structure reaction tube. It is equipped with a manifold that can be placed according to the processing content of
The single reaction tube has a small diameter on the upper side of the body portion between a body portion of the single reaction tube and a flange portion of the single reaction tube to which the single reaction tube is attached to the manifold. It has an inclined part that becomes larger on the part side,
The outer diameter of the flange portion of the single reaction tube and the outer diameter of the flange portion of the outer reaction tube of the double structure reaction tube are the same, and the single reaction tube and the double structure reaction tube are It is possible to provide a semiconductor manufacturing apparatus characterized in that it can be replaced and installed in the manifold.

本発明によれば、高清浄雰囲気で良質な膜を生成し、膜厚均一性を向上することのできる半導体製造装置を提供することができる。   ADVANTAGE OF THE INVENTION According to this invention, the semiconductor manufacturing apparatus which can produce | generate a quality film | membrane in a highly clean atmosphere and can improve film thickness uniformity can be provided.

次に、本発明の好ましい実施の形態を図面を参照して説明する。
図１は、本発明の一実施の形態の半導体製造装置の概略縦断面図である。
本実施の形態の縦型半導体製造装置１においては、アウターチューブ１０の外部にヒータ（図示せず）を備えており、アウターチューブ１０内を均一に加熱できる構造となっている。アウターチューブ１０内には、複数の半導体ウェーハ（図示せず）を垂直方向に積層して搭載するボート３０が設けられている。ボート３０には複数の基板載置溝３１が設けられ、これらの基板載置溝３１に複数の半導体ウェーハ（図示せず）がそれぞれ水平に載置される。ボート３０は、ボート台３２上に搭載されている。 Next, a preferred embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic longitudinal sectional view of a semiconductor manufacturing apparatus according to an embodiment of the present invention.
In the vertical semiconductor manufacturing apparatus 1 of the present embodiment, a heater (not shown) is provided outside the outer tube 10 so that the inside of the outer tube 10 can be heated uniformly. In the outer tube 10, a boat 30 is provided on which a plurality of semiconductor wafers (not shown) are stacked and mounted in the vertical direction. A plurality of substrate placement grooves 31 are provided in the boat 30, and a plurality of semiconductor wafers (not shown) are horizontally placed in these substrate placement grooves 31. The boat 30 is mounted on a boat table 32.

縦型半導体製造装置１００は、マニホールド４０を備えている。アウターチューブ１０は、マニホールド４０の上部に取り付けられている。マニホールド４０の上部には、フランジ４３が設けられ、フランジ４３と取り付け部材４４とにより、アウターチューブ１０の下部のフランジ部１４とマニホールド４０のフランジ４３とをこれらの間にＯ−リング（オーリング）４５を介して固定している。
アウターチューブ１０は、天板部１１と、円筒状の胴体部１２と、円錐部１３と、フランジ部１４とを備えており、アウターチューブ１０の下部は開放された構造となっている。アウターチューブ１０の材質としては、石英、ＳＩＣ他が使用される。 The vertical semiconductor manufacturing apparatus 100 includes a manifold 40. The outer tube 10 is attached to the upper part of the manifold 40. A flange 43 is provided on the upper portion of the manifold 40, and the flange portion 14 and the attachment member 44 allow the flange portion 14 at the lower portion of the outer tube 10 and the flange 43 of the manifold 40 to be O-ring (O-ring) between them. 45 is fixed.
The outer tube 10 includes a top plate portion 11, a cylindrical body portion 12, a conical portion 13, and a flange portion 14. The lower portion of the outer tube 10 is open. Quartz, SIC, etc. are used as the material of the outer tube 10.

マニホールド４０の側壁にはガス導入ポート２２が貫通して取り付けられ、そのマニホールド４０の内側端部には、ノズル２１が取り付けられている。また、排気管４２もマニホールド４０の側壁を貫通して取り付けられている。   The gas introduction port 22 is attached through the side wall of the manifold 40, and the nozzle 21 is attached to the inner end of the manifold 40. The exhaust pipe 42 is also attached through the side wall of the manifold 40.

マニホールド４０の下端は開放された構造となっているが、ベースフランジ５１、シールキャップ５２により閉じられ、気密な構造となっている。
ボート３０の挿入／引き出しは、図中省略のボートエレベータ部に取り付いているアームにシールキャップ５２が取り付けられており、このボートエレベータによるシールキャップ５２の昇降動作により行われる。また、シールキャップ５２に回転軸３３が取り付けられボート３０を回転させることも可能となる。ボートの回転は、ウェーハの均一性を向上するのに有効である。 Although the lower end of the manifold 40 has an open structure, it is closed by a base flange 51 and a seal cap 52 and has an airtight structure.
The boat 30 is inserted / drawn by attaching a seal cap 52 to an arm attached to a boat elevator portion (not shown), and the boat cap 30 is moved up and down by the boat elevator. Further, the rotary shaft 33 is attached to the seal cap 52, and the boat 30 can be rotated. The rotation of the boat is effective in improving wafer uniformity.

マニホールド４０の下部からノズル２１がアウターチューブ１０内に挿入され、ボート３０の上端近傍まで延在している。ノズル２１から供給された原料ガスは、ボート３０上に噴出され、アウターチューブ１０内の空間を通って下方に流れ、排気管４２から排気される。   The nozzle 21 is inserted into the outer tube 10 from the lower part of the manifold 40 and extends to the vicinity of the upper end of the boat 30. The source gas supplied from the nozzle 21 is jetted onto the boat 30, flows downward through the space in the outer tube 10, and is exhausted from the exhaust pipe 42.

本実施の形態では、従来技術で使用していたインナーチューブを取り外し、アウターチューブ１０の内径を限りなく小さくする（例えば、胴体部１２の内径をウェーハ径＋（５０〜７０ｍｍ）とする）ことで、ウェーハを保持するボート３０との距離を短くすることにより、ドーパント濃度均一性、膜厚均一性の向上を図ることができる。また、反応管（アウターチューブ１０）とボート３０の間に原料ガスをボート３０上まで導入するノズル２１を設け、反応ガスを上から下へ反応管（アウターチューブ１０）内に流すことにより、反応炉内への炉下部からの汚染を防止することができる。このように、インナーチューブを取り外し、アウターチューブ１０のみとしたので、図２にようにインナーチューブ１２０とアウターチューブ１１０との間に反応ガスを上から下へ流す必要がなくなり、その結果、原料ガスをボート３０上に導入するノズル２１を設けて、反応ガスを上から下へアウターチューブ１０内を流すことができるようになって、炉下部からの汚染を防止することができるようになった。   In the present embodiment, the inner tube used in the prior art is removed, and the inner diameter of the outer tube 10 is reduced as much as possible (for example, the inner diameter of the body portion 12 is set to the wafer diameter + (50 to 70 mm)). By reducing the distance from the boat 30 that holds the wafers, it is possible to improve the dopant concentration uniformity and the film thickness uniformity. Further, a nozzle 21 for introducing the raw material gas up to the boat 30 is provided between the reaction tube (outer tube 10) and the boat 30, and the reaction gas is allowed to flow into the reaction tube (outer tube 10) from top to bottom. Contamination from the lower part of the furnace into the furnace can be prevented. Thus, since the inner tube is removed and only the outer tube 10 is used, there is no need to flow the reaction gas from the top to the bottom between the inner tube 120 and the outer tube 110 as shown in FIG. Is provided on the boat 30 so that the reaction gas can flow through the outer tube 10 from top to bottom, and contamination from the lower part of the furnace can be prevented.

また、アウターチューブ１０のフランジ部１４と胴体部１２との間に円錐形状の円錐部１３を設けることにより、反応管を交換するのみで、図２に示すような、インナーチューブ１２０とアウターチューブ１１０を設けることも可能で、図２に示すような原料ガスを下から上へ流す方式に容易に変更可能である。なお、このためには、図１には図示していないが、図２に示すようなインナーリング取り付け部材４６をマニホールド４０内部に設けておけばよい。   Further, by providing a conical conical portion 13 between the flange portion 14 and the body portion 12 of the outer tube 10, the inner tube 120 and the outer tube 110 as shown in FIG. Can be provided, and can be easily changed to a system in which the source gas flows from the bottom to the top as shown in FIG. For this purpose, although not shown in FIG. 1, an inner ring mounting member 46 as shown in FIG.

また、本実施の形態の装置は、インナーチューブ１２０とアウターチューブ１１０を用いる図２に示す装置と共用部品で製作できる。特に反応管を取り付ける炉口部は繁雑な構造となっているが、主にマニホールド４０、ベースフランジ５１、シールキャップ５２が共通化でき、製作コストを低減できる。   In addition, the apparatus according to the present embodiment can be manufactured using a shared part with the apparatus illustrated in FIG. In particular, the furnace port portion to which the reaction tube is attached has a complicated structure, but mainly the manifold 40, the base flange 51, and the seal cap 52 can be used in common, and the manufacturing cost can be reduced.

また、アウターチューブ１０（反応管）の形状を下記とすることにより、反応管の強度を向上させている。
フランジ部１４、円錐部１３：厚肉７〜１５ｍｍ（最適値１０ｍｍ）
胴体部１２、天板部１１：３〜７ｍｍ（最適値４ｍｍ）
安全率：１１倍
（なお、ここで、安全率とは、部材の破壊点に達する荷重と設計上考えられた荷重との比をいう。）
なお、フランジ部１４の内径は、胴体部１２の内径＋（３０〜６０ｍｍ）である。 Moreover, the intensity | strength of a reaction tube is improved by setting the shape of the outer tube 10 (reaction tube) as follows.
Flange part 14 and conical part 13: 7 to 15 mm thick (optimum value 10 mm)
Body part 12, top plate part 11: 3 to 7 mm (optimum value 4 mm)
Safety factor: 11 times (Here, the safety factor is the ratio of the load reaching the breaking point of the member to the load considered in the design.)
The inner diameter of the flange portion 14 is the inner diameter of the body portion 12 + (30 to 60 mm).

ここで、アウターチューブ１０の下部のフランジ部１４と胴体部１２とを図２に示すように直角とせず、フランジ部１４と胴体部１２ｂとの間に 断面テーパ状の円錐部１３を設けたのは、反応管（アウターチューブ１０）内を減圧にし、また反応管（アウターチューブ１０）を加熱したときの強度を保つためである。   Here, the lower flange portion 14 and the body portion 12 of the outer tube 10 are not perpendicular to each other as shown in FIG. 2, and a conical portion 13 having a tapered cross section is provided between the flange portion 14 and the body portion 12b. This is because the inside of the reaction tube (outer tube 10) is depressurized and the strength when the reaction tube (outer tube 10) is heated is maintained.

次に、本実施の形態の装置１を用いた成膜方法の一実施例について説明する。
例えば、１００枚の半導体シリコンウエハ（図示せず）をボート３０に搭載し、アウターチューブ１０の外側のヒータ（図示せず）により４００℃〜７００℃にアウターチューブ１０内を加熱し、反応ガスのＳｉＨ4、ＧｅＨ4およびドーピングガスとしてＢＣｌ3、キャリアガスとしてＨ２をノズル２１より流し、排気管４２より排気して、反応管（アウターチューブ１０）内の圧力を０．１Ｐａ〜１００Ｐａに保った状態で、ＳｉおよびＳｉＧｅのエピタキシャル成長を行った。このとき、成膜した膜の膜厚均一性はＢ濃度均一性で±２．７％であった。また、炉下部からの汚染により、基板の膜成長不良を引きおこすことはなかった。
なお、本実施の形態の装置１は、上記温度と圧力に限定されず、それぞれ温度４００℃〜９００℃、圧力０．１Ｐａ〜５００Ｐａの範囲で好適に使用できる。 Next, an example of a film forming method using the apparatus 1 of the present embodiment will be described.
For example, 100 semiconductor silicon wafers (not shown) are mounted on the boat 30, the inside of the outer tube 10 is heated to 400 ° C. to 700 ° C. by a heater (not shown) outside the outer tube 10, SiH 4 , GeH 4 , BCl 3 as a doping gas, and H 2 as a carrier gas were allowed to flow from the nozzle 21 and were exhausted from the exhaust pipe 42 to maintain the pressure in the reaction tube (outer tube 10) at 0.1 Pa to 100 Pa. In this state, Si and SiGe were epitaxially grown. At this time, the film thickness uniformity of the formed film was ± 2.7% in terms of B concentration uniformity. Further, the substrate growth did not cause poor film growth due to contamination from the bottom of the furnace.
In addition, the apparatus 1 of this Embodiment is not limited to the said temperature and pressure, It can use suitably in the range of temperature 400 degreeC-900 degreeC and pressure 0.1Pa-500Pa, respectively.

本実施の形態によれば、均一性を向上することができ、また、石英部品の交換（アウターチューブ１０と、インナーチューブ１２０およびアウターチューブ１１０との交換）でプロセスの使い分けが可能である。   According to the present embodiment, the uniformity can be improved, and the process can be properly used by exchanging quartz parts (exchanging the outer tube 10, the inner tube 120, and the outer tube 110).

本発明の一実施の形態の半導体製造装置の概略縦断面図である。It is a schematic longitudinal cross-sectional view of the semiconductor manufacturing apparatus of one embodiment of this invention. 従来の半導体製造装置の概略縦断面図である。It is a schematic longitudinal cross-sectional view of the conventional semiconductor manufacturing apparatus.

符号の説明Explanation of symbols

１…半導体製造装置
１０…アウターチューブ
１１…天板部
１２…胴体部
１３…円錐部
１４…フランジ部
２１、２３…ノズル
２２…ガス導入ポート
３０…ボート
３１…基板載置溝
３２…ボート台
３３…回転軸
４０…マニホールド
４２…排気管
４３…フランジ
４４…取り付け部材
４５…オーリング
４６…インナーチューブ取り付け部材
５１…ベースフランジ
５２…シールキャップ
１１０…アウターチューブ
１１３…フランジ部
１２０…インナーチューブ DESCRIPTION OF SYMBOLS 1 ... Semiconductor manufacturing apparatus 10 ... Outer tube 11 ... Top plate part 12 ... Body part 13 ... Conical part 14 ... Flange part 21, 23 ... Nozzle 22 ... Gas introduction port 30 ... Boat 31 ... Substrate mounting groove 32 ... Boat stand 33 Rotating shaft 40 Manifold 42 Exhaust pipe 43 Flange 44 Mounting member 45 O ring 46 Inner tube mounting member 51 Base flange 52 Seal cap 110 Outer tube 113 Flange section 120 Inner tube

Claims (4)

一重の反応管と、内側反応管と外側反応管とを有する二重構造の反応管とを、前記一重の反応管または前記二重構造の反応管の前記内側反応管内に載置される半導体ウェーハの処理の内容に応じてそれぞれ載置可能なマニホールドを備え、
前記一重の反応管は、前記一重の反応管の胴体部と前記一重の反応管を前記マニホールドに取り付ける前記一重の反応管のフランジ部との間に、径が前記胴体部の上側で小さく、フランジ部側で大きくなる傾斜部を具備し、
前記一重の反応管を前記マニホールドに載置した際の前記一重の反応管の内壁の位置は、前記二重構造の反応管を前記マニホールドに載置した際の前記外側反応管の内壁の位置よりも内側に位置するように、前記一重の反応管および前記二重構造の反応管が前記マニホールドに載置されることを特徴とする半導体製造装置。 A semiconductor wafer in which a single reaction tube and a dual structure reaction tube having an inner reaction tube and an outer reaction tube are mounted in the single reaction tube or the inner reaction tube of the dual structure reaction tube. It is equipped with a manifold that can be placed according to the processing content of
The single reaction tube has a small diameter on the upper side of the body portion between a body portion of the single reaction tube and a flange portion of the single reaction tube to which the single reaction tube is attached to the manifold. It has an inclined part that becomes larger on the part side,
The position of the inner wall of the single reaction tube when the single reaction tube is placed on the manifold is different from the position of the inner wall of the outer reaction tube when the double structure reaction tube is placed on the manifold. The single reaction tube and the dual structure reaction tube are mounted on the manifold so that the single reaction tube and the double reaction tube are positioned inside. 一重の反応管と、内側反応管と外側反応管とを有する二重構造の反応管とを、前記一重の反応管または前記二重構造の反応管の前記内側反応管内に載置される半導体ウェーハの処理の内容に応じてそれぞれ載置可能なマニホールドを備え、
前記一重の反応管は、前記一重の反応管の胴体部と前記一重の反応管を前記マニホールドに取り付ける前記一重の反応管のフランジ部との間に、径が前記胴体部の上側で小さく、フランジ部側で大きくなる傾斜部を具備し、
前記マニホールドに排気口を設け、前記一重の反応管を前記マニホールドに載置して前記半導体ウェーハを処理する際に、反応ガスを前記一重の反応管の上部から前記排気口に流れるようにしたことを特徴とする半導体製造装置。 A semiconductor wafer in which a single reaction tube and a dual structure reaction tube having an inner reaction tube and an outer reaction tube are mounted in the single reaction tube or the inner reaction tube of the dual structure reaction tube. It is equipped with a manifold that can be placed according to the processing content of
The single reaction tube has a small diameter between the body portion of the single reaction tube and the flange portion of the single reaction tube that attaches the single reaction tube to the manifold. It has an inclined part that becomes larger on the part side,
An exhaust port is provided in the manifold, and when the semiconductor wafer is processed by placing the single reaction tube on the manifold, a reaction gas is allowed to flow from the upper part of the single reaction tube to the exhaust port. A semiconductor manufacturing apparatus. マニホールドに一重の反応管を載置した状態で、前記反応管内にてボートに載置された半導体ウェーハの処理を行う半導体製造装置であって、
前記マニホールドは、処理内容に応じて、前記一重の反応管と、内側反応管と外側反応管とから成る二重構造の反応管とをそれぞれ載置可能であって、前記マニホールドに前記二重構造の反応管を載置した際の前記内側反応管の内壁とボートとの距離と、前記マニホールドに前記一重の反応管を載置した際の前記一重の反応管の内壁とボートとの距離とを同じとするため、
前記一重の反応管は、
前記一重の反応管の胴体部と反応管を前記マニホールドに取り付ける反応管のフランジ部との間に、径が胴体部上側で小さく、フランジ部側で大きくなる傾斜部を具備したことを特徴とする半導体製造装置。 A semiconductor manufacturing apparatus for processing a semiconductor wafer mounted on a boat in the reaction tube in a state where a single reaction tube is mounted on a manifold,
The manifold can be mounted with the single reaction tube and a double-structured reaction tube composed of an inner reaction tube and an outer reaction tube, respectively, depending on the contents of processing. The distance between the inner wall of the inner reaction tube and the boat when the reaction tube is mounted, and the distance between the inner wall of the single reaction tube and the boat when the single reaction tube is mounted on the manifold. To be the same,
The single reaction tube is
Between the body portion of the single reaction tube and the flange portion of the reaction tube that attaches the reaction tube to the manifold, an inclined portion having a small diameter on the upper side of the body portion and larger on the flange portion side is provided. Semiconductor manufacturing equipment. 一重の反応管と、内側反応管と外側反応管とを有する二重構造の反応管とを、前記一重の反応管または前記二重構造の反応管の前記内側反応管内に載置される半導体ウェーハの処理の内容に応じてそれぞれ載置可能なマニホールドを備え、
前記一重の反応管は、前記一重の反応管の胴体部と前記一重の反応管を前記マニホールドに取り付ける前記一重の反応管のフランジ部との間に、径が前記胴体部の上側で小さく、フランジ部側で大きくなる傾斜部を具備し、
前記一重の反応管の前記フランジ部の外径と前記二重構造の反応管の前記外側反応管のフランジ部の外径とを同一とし、前記一重の反応管と前記二重構造の反応管とを前記マニホールドに交換設置可能にしたことを特徴とする半導体製造装置。
A semiconductor wafer in which a single reaction tube and a dual structure reaction tube having an inner reaction tube and an outer reaction tube are mounted in the single reaction tube or the inner reaction tube of the dual structure reaction tube. It is equipped with a manifold that can be placed according to the processing content of
The single reaction tube has a small diameter on the upper side of the body portion between a body portion of the single reaction tube and a flange portion of the single reaction tube to which the single reaction tube is attached to the manifold. It has an inclined part that becomes larger on the part side,
The outer diameter of the flange portion of the single reaction tube and the outer diameter of the flange portion of the outer reaction tube of the double structure reaction tube are the same, and the single reaction tube and the double structure reaction tube are A semiconductor manufacturing apparatus characterized in that it can be replaced and installed in the manifold.
JP2006084283A 2006-03-24 2006-03-24 Semiconductor manufacturing equipment Expired - Lifetime JP4532427B2 (en)

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