JPS61264725A - ステツプ・アンド・リピ−ト用軟x線転写マスク及びその製造方法 - Google Patents

ステツプ・アンド・リピ−ト用軟x線転写マスク及びその製造方法

Info

Publication number
JPS61264725A
JPS61264725A JP60105536A JP10553685A JPS61264725A JP S61264725 A JPS61264725 A JP S61264725A JP 60105536 A JP60105536 A JP 60105536A JP 10553685 A JP10553685 A JP 10553685A JP S61264725 A JPS61264725 A JP S61264725A
Authority
JP
Japan
Prior art keywords
soft
ray
frame
wafer
absorber pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60105536A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0521334B2 (enExample
Inventor
Yasuo Iida
康夫 飯田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60105536A priority Critical patent/JPS61264725A/ja
Publication of JPS61264725A publication Critical patent/JPS61264725A/ja
Publication of JPH0521334B2 publication Critical patent/JPH0521334B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP60105536A 1985-05-17 1985-05-17 ステツプ・アンド・リピ−ト用軟x線転写マスク及びその製造方法 Granted JPS61264725A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60105536A JPS61264725A (ja) 1985-05-17 1985-05-17 ステツプ・アンド・リピ−ト用軟x線転写マスク及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60105536A JPS61264725A (ja) 1985-05-17 1985-05-17 ステツプ・アンド・リピ−ト用軟x線転写マスク及びその製造方法

Publications (2)

Publication Number Publication Date
JPS61264725A true JPS61264725A (ja) 1986-11-22
JPH0521334B2 JPH0521334B2 (enExample) 1993-03-24

Family

ID=14410307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60105536A Granted JPS61264725A (ja) 1985-05-17 1985-05-17 ステツプ・アンド・リピ−ト用軟x線転写マスク及びその製造方法

Country Status (1)

Country Link
JP (1) JPS61264725A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0413950U (enExample) * 1990-05-28 1992-02-04
EP0677787A3 (en) * 1994-03-15 1996-03-27 Canon Kk Mask and mask holder.

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0413950U (enExample) * 1990-05-28 1992-02-04
EP0677787A3 (en) * 1994-03-15 1996-03-27 Canon Kk Mask and mask holder.

Also Published As

Publication number Publication date
JPH0521334B2 (enExample) 1993-03-24

Similar Documents

Publication Publication Date Title
EP3537472B1 (en) Method for transferring device layer to transfer substrate
JP3244894B2 (ja) マスク保持方法、マスク及びマスクチャック、ならびにこれを用いた露光装置とデバイス製造方法
JP4239974B2 (ja) 半導体素子の製造方法およびリング状補強部材
JP2011076037A (ja) ペリクルの製造方法及びリソグラフィ用ペリクル
JPS61264725A (ja) ステツプ・アンド・リピ−ト用軟x線転写マスク及びその製造方法
JPS63285932A (ja) 安定なチッ化ホウ素を用いたx線リソグラフィーによるデバイス製造方法,そのマスク構造及びデバイス製造システム
KR20020061737A (ko) 반도체 제조장치 및 반도체 제조장치의 웨이퍼 가공방법
KR100223023B1 (ko) X-선 마스크
JP2797190B2 (ja) X線露光マスクの製造方法
JPH0345526B2 (enExample)
US4671850A (en) Mask using polyimide to support a patterned x-ray opaque layer
JPH11307442A (ja) X線マスク及びx線マスクブランク並びにそれらの製造方法
WO2024241940A1 (ja) SiC半導体装置用基板、SiC接合基板、SiC多結晶基板およびSiC多結晶基板の製造方法
EP4675017A1 (en) Substrate for sic semiconductor devices, sic bonded substrate, sic polycrystal substrate, and sic polycrystal substrate manufacturing method
JP3587090B2 (ja) 電子ビーム描画用アパーチャ及びマスクホルダー並びにそれらを用いた電子ビーム露光マスク
TWI895474B (zh) 積層體之製造方法、積層體及半導體封裝之製造方法
JP2962049B2 (ja) X線マスク
JP3257645B2 (ja) セラミック装置の製造方法
JPS63150918A (ja) X線露光用マスク
JP2897891B2 (ja) ウェハ搬送装置
JPS6365621A (ja) X線露光マスク
JPH05275319A (ja) X線リソグラフィマスクの製造方法およびx線リソグラフィマスク
JPS62281324A (ja) X線マスクおよびその製造方法
JPS62142324A (ja) X線透明膜に対し支持を与える層を持つたマスクを製造する方法及びその結果得られる構成体
JPH01152625A (ja) X線露光用マスクの製造装置および製造方法