JPS61263185A - 半導体レ−ザアレイ装置 - Google Patents

半導体レ−ザアレイ装置

Info

Publication number
JPS61263185A
JPS61263185A JP60105472A JP10547285A JPS61263185A JP S61263185 A JPS61263185 A JP S61263185A JP 60105472 A JP60105472 A JP 60105472A JP 10547285 A JP10547285 A JP 10547285A JP S61263185 A JPS61263185 A JP S61263185A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser array
array device
phase mode
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60105472A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0337876B2 (enrdf_load_html_response
Inventor
Kaneki Matsui
完益 松井
Mototaka Tanetani
元隆 種谷
Akihiro Matsumoto
晃広 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP60105472A priority Critical patent/JPS61263185A/ja
Publication of JPS61263185A publication Critical patent/JPS61263185A/ja
Publication of JPH0337876B2 publication Critical patent/JPH0337876B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08081—Unstable resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP60105472A 1985-05-16 1985-05-16 半導体レ−ザアレイ装置 Granted JPS61263185A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60105472A JPS61263185A (ja) 1985-05-16 1985-05-16 半導体レ−ザアレイ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60105472A JPS61263185A (ja) 1985-05-16 1985-05-16 半導体レ−ザアレイ装置

Publications (2)

Publication Number Publication Date
JPS61263185A true JPS61263185A (ja) 1986-11-21
JPH0337876B2 JPH0337876B2 (enrdf_load_html_response) 1991-06-06

Family

ID=14408533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60105472A Granted JPS61263185A (ja) 1985-05-16 1985-05-16 半導体レ−ザアレイ装置

Country Status (1)

Country Link
JP (1) JPS61263185A (enrdf_load_html_response)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4950622A (en) * 1988-04-28 1990-08-21 Korea Advanced Institute Of Science And Technology Method for manufacturing a surface emitting type AlGaAs/GaAs semiconductor laser diode
CN110412544A (zh) * 2019-08-23 2019-11-05 上海禾赛光电科技有限公司 激光发射系统以及包括所述激光发射系统的激光雷达

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4950622A (en) * 1988-04-28 1990-08-21 Korea Advanced Institute Of Science And Technology Method for manufacturing a surface emitting type AlGaAs/GaAs semiconductor laser diode
CN110412544A (zh) * 2019-08-23 2019-11-05 上海禾赛光电科技有限公司 激光发射系统以及包括所述激光发射系统的激光雷达

Also Published As

Publication number Publication date
JPH0337876B2 (enrdf_load_html_response) 1991-06-06

Similar Documents

Publication Publication Date Title
US6339606B1 (en) High power semiconductor light source
JP3154200B2 (ja) マルチビーム半導体レーザ
JPS5940592A (ja) 半導体レ−ザ素子
US5396511A (en) Semiconductor laser apparatus with curved waveguide
JPS60124983A (ja) 半導体レ−ザ
US4772082A (en) Semiconductor laser array device
US5563901A (en) Semiconductor laser array
JPH0431195B2 (enrdf_load_html_response)
US4815088A (en) Semiconductor laser array device
JPS61263185A (ja) 半導体レ−ザアレイ装置
JP2798720B2 (ja) 半導体レーザアレイ
JPH054835B2 (enrdf_load_html_response)
US4811351A (en) Semiconductor laser array device
JP2967757B2 (ja) 半導体レーザ装置及びその製造方法
JPH0319292A (ja) 半導体レーザ
JPS6257275A (ja) 半導体レ−ザアレイ装置
US4764937A (en) Semiconductor laser array device
JPS61102087A (ja) 半導体レ−ザ装置
JPH01175280A (ja) 半導体レーザアレイ装置
JPS63164286A (ja) 半導体レ−ザアレイ装置
JPH04199133A (ja) 光増幅器および光集積回路
JPH0268975A (ja) 半導体レーザ
JPH09214047A (ja) 面発光半導体レーザ
JPH0334875B2 (enrdf_load_html_response)
JPH0440874B2 (enrdf_load_html_response)

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees