JPS61263131A - 微細パタ−ン化層形成方法 - Google Patents

微細パタ−ン化層形成方法

Info

Publication number
JPS61263131A
JPS61263131A JP60103494A JP10349485A JPS61263131A JP S61263131 A JPS61263131 A JP S61263131A JP 60103494 A JP60103494 A JP 60103494A JP 10349485 A JP10349485 A JP 10349485A JP S61263131 A JPS61263131 A JP S61263131A
Authority
JP
Japan
Prior art keywords
resist
substrate
etching
ozone
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60103494A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0461492B2 (enrdf_load_html_response
Inventor
Naoki Kato
加藤 直規
Takashi Makimura
牧村 隆司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP60103494A priority Critical patent/JPS61263131A/ja
Publication of JPS61263131A publication Critical patent/JPS61263131A/ja
Publication of JPH0461492B2 publication Critical patent/JPH0461492B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP60103494A 1985-05-15 1985-05-15 微細パタ−ン化層形成方法 Granted JPS61263131A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60103494A JPS61263131A (ja) 1985-05-15 1985-05-15 微細パタ−ン化層形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60103494A JPS61263131A (ja) 1985-05-15 1985-05-15 微細パタ−ン化層形成方法

Publications (2)

Publication Number Publication Date
JPS61263131A true JPS61263131A (ja) 1986-11-21
JPH0461492B2 JPH0461492B2 (enrdf_load_html_response) 1992-10-01

Family

ID=14355544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60103494A Granted JPS61263131A (ja) 1985-05-15 1985-05-15 微細パタ−ン化層形成方法

Country Status (1)

Country Link
JP (1) JPS61263131A (enrdf_load_html_response)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015073064A1 (en) * 2013-06-21 2015-05-21 Eastman Kodak Company Patterning for selective area deposition

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5687343A (en) * 1979-12-17 1981-07-15 Sony Corp Forming method of wiring
JPS58156469A (ja) * 1982-03-09 1983-09-17 Kobe Steel Ltd 自動車用ドア開装置
JPS5912945A (ja) * 1982-07-09 1984-01-23 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション ポリエステルを食刻する方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5687343A (en) * 1979-12-17 1981-07-15 Sony Corp Forming method of wiring
JPS58156469A (ja) * 1982-03-09 1983-09-17 Kobe Steel Ltd 自動車用ドア開装置
JPS5912945A (ja) * 1982-07-09 1984-01-23 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション ポリエステルを食刻する方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015073064A1 (en) * 2013-06-21 2015-05-21 Eastman Kodak Company Patterning for selective area deposition

Also Published As

Publication number Publication date
JPH0461492B2 (enrdf_load_html_response) 1992-10-01

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