JPS6126217B2 - - Google Patents
Info
- Publication number
- JPS6126217B2 JPS6126217B2 JP12034877A JP12034877A JPS6126217B2 JP S6126217 B2 JPS6126217 B2 JP S6126217B2 JP 12034877 A JP12034877 A JP 12034877A JP 12034877 A JP12034877 A JP 12034877A JP S6126217 B2 JPS6126217 B2 JP S6126217B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- polyimide
- heat treatment
- polymer resin
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 18
- 239000002952 polymeric resin Substances 0.000 claims description 16
- 229920003002 synthetic resin Polymers 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 description 34
- 239000010410 layer Substances 0.000 description 23
- 239000004642 Polyimide Substances 0.000 description 15
- 238000005530 etching Methods 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005553 drilling Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12034877A JPS5453863A (en) | 1977-10-05 | 1977-10-05 | Forming method of insulation films |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12034877A JPS5453863A (en) | 1977-10-05 | 1977-10-05 | Forming method of insulation films |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5453863A JPS5453863A (en) | 1979-04-27 |
| JPS6126217B2 true JPS6126217B2 (zh) | 1986-06-19 |
Family
ID=14784001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12034877A Granted JPS5453863A (en) | 1977-10-05 | 1977-10-05 | Forming method of insulation films |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5453863A (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5831558A (ja) * | 1981-08-18 | 1983-02-24 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS616843A (ja) * | 1984-06-20 | 1986-01-13 | Sanyo Electric Co Ltd | 半導体装置のコンタクトホ−ル形成方法 |
| JPS6248044A (ja) * | 1985-08-28 | 1987-03-02 | Oki Electric Ind Co Ltd | 多層配線形成方法 |
| US5034091A (en) * | 1990-04-27 | 1991-07-23 | Hughes Aircraft Company | Method of forming an electrical via structure |
-
1977
- 1977-10-05 JP JP12034877A patent/JPS5453863A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5453863A (en) | 1979-04-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3630777B2 (ja) | マルチチップ・モジュールの製造方法 | |
| US3985597A (en) | Process for forming passivated metal interconnection system with a planar surface | |
| US4661204A (en) | Method for forming vertical interconnects in polyimide insulating layers | |
| US4062720A (en) | Process for forming a ledge-free aluminum-copper-silicon conductor structure | |
| JPS6244812B2 (zh) | ||
| US4447824A (en) | Planar multi-level metal process with built-in etch stop | |
| US5517062A (en) | Stress released VLSI structure by the formation of porous intermetal layer | |
| JPH07120650B2 (ja) | スピンオンしたゲルマニウムガラス | |
| US4089766A (en) | Method of passivating and planarizing a metallization pattern | |
| JPS6126217B2 (zh) | ||
| JPH0445974B2 (zh) | ||
| CN104600027B (zh) | 一种tsv通孔的制备工艺 | |
| JPS5842255A (ja) | 多層配線をもつ半導体実装基板とその製造方法 | |
| JP2842405B2 (ja) | 半導体装置の製造方法 | |
| JPS61187346A (ja) | 絶縁膜構造および半導体装置 | |
| JPS6117135B2 (zh) | ||
| JPH01238044A (ja) | 半導体装置 | |
| JP3003394B2 (ja) | 突起電極の製造方法 | |
| JP2003257973A (ja) | ヴィアホールの形成方法 | |
| JPS63124446A (ja) | 接続孔形成方法 | |
| JPS6262469B2 (zh) | ||
| JPH0231448A (ja) | 半導体装置の製造方法 | |
| JPH0330295B2 (zh) | ||
| JP2621186B2 (ja) | 転写用バンプの形成方法 | |
| JPH079939B2 (ja) | 多層配線の形成方法 |