JPS6126213B2 - - Google Patents
Info
- Publication number
- JPS6126213B2 JPS6126213B2 JP7486876A JP7486876A JPS6126213B2 JP S6126213 B2 JPS6126213 B2 JP S6126213B2 JP 7486876 A JP7486876 A JP 7486876A JP 7486876 A JP7486876 A JP 7486876A JP S6126213 B2 JPS6126213 B2 JP S6126213B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- light emitting
- layer
- main surface
- group compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 72
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 150000001875 compounds Chemical class 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 39
- 238000000034 method Methods 0.000 description 25
- 230000008878 coupling Effects 0.000 description 23
- 238000010168 coupling process Methods 0.000 description 23
- 238000005859 coupling reaction Methods 0.000 description 23
- 230000003287 optical effect Effects 0.000 description 23
- 230000008901 benefit Effects 0.000 description 12
- 239000008188 pellet Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 9
- 230000008859 change Effects 0.000 description 7
- 239000007791 liquid phase Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000003776 cleavage reaction Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 230000007017 scission Effects 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 238000009429 electrical wiring Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000005453 pelletization Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000002547 anomalous effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Landscapes
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7486876A JPS5388A (en) | 1976-06-24 | 1976-06-24 | Iii-v group chemical compound semiconductor element and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7486876A JPS5388A (en) | 1976-06-24 | 1976-06-24 | Iii-v group chemical compound semiconductor element and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5388A JPS5388A (en) | 1978-01-05 |
| JPS6126213B2 true JPS6126213B2 (enExample) | 1986-06-19 |
Family
ID=13559729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7486876A Granted JPS5388A (en) | 1976-06-24 | 1976-06-24 | Iii-v group chemical compound semiconductor element and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5388A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61156727A (ja) * | 1984-12-27 | 1986-07-16 | Toyota Central Res & Dev Lab Inc | 化合物半導体装置およびその製法 |
| JPH07153991A (ja) * | 1993-11-26 | 1995-06-16 | Nec Corp | 発光ダイオード及びその製造方法 |
| JP4722591B2 (ja) * | 2005-07-01 | 2011-07-13 | 株式会社 ワールドリング | 外側リング体と内側リング体からなる空洞部を設けた身飾品の製造方法 |
-
1976
- 1976-06-24 JP JP7486876A patent/JPS5388A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5388A (en) | 1978-01-05 |
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