JPS6126158B2 - - Google Patents
Info
- Publication number
- JPS6126158B2 JPS6126158B2 JP3633281A JP3633281A JPS6126158B2 JP S6126158 B2 JPS6126158 B2 JP S6126158B2 JP 3633281 A JP3633281 A JP 3633281A JP 3633281 A JP3633281 A JP 3633281A JP S6126158 B2 JPS6126158 B2 JP S6126158B2
- Authority
- JP
- Japan
- Prior art keywords
- row
- memory cells
- nonvolatile memory
- gate
- commonly connected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015654 memory Effects 0.000 claims description 71
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000010586 diagram Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
Landscapes
- Read Only Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3633281A JPS57150192A (en) | 1981-03-13 | 1981-03-13 | Non-volatile semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3633281A JPS57150192A (en) | 1981-03-13 | 1981-03-13 | Non-volatile semiconductor memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57150192A JPS57150192A (en) | 1982-09-16 |
JPS6126158B2 true JPS6126158B2 (fr) | 1986-06-19 |
Family
ID=12466867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3633281A Granted JPS57150192A (en) | 1981-03-13 | 1981-03-13 | Non-volatile semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57150192A (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4566080A (en) * | 1983-07-11 | 1986-01-21 | Signetics Corporation | Byte wide EEPROM with individual write circuits |
JPS63193400A (ja) * | 1987-02-06 | 1988-08-10 | Nec Corp | 電気的書込み可能な読出し専用メモリ |
JPH0247922A (ja) * | 1988-08-09 | 1990-02-16 | Kawasaki Steel Corp | プログラマブル論理素子 |
US5677875A (en) * | 1995-02-28 | 1997-10-14 | Nec Corporation | Non-volatile semiconductor memory device configured to minimize variations in threshold voltages of non-written memory cells and potentials of selected bit lines |
KR100597636B1 (ko) * | 2004-06-08 | 2006-07-05 | 삼성전자주식회사 | 상 변화 반도체 메모리 장치 |
JP2009158094A (ja) * | 2009-04-14 | 2009-07-16 | Renesas Technology Corp | 不揮発性記憶装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4237547A (en) * | 1979-09-17 | 1980-12-02 | Motorola, Inc. | Program decoder for shared contact eprom |
-
1981
- 1981-03-13 JP JP3633281A patent/JPS57150192A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57150192A (en) | 1982-09-16 |
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