JPS6126158B2 - - Google Patents

Info

Publication number
JPS6126158B2
JPS6126158B2 JP3633281A JP3633281A JPS6126158B2 JP S6126158 B2 JPS6126158 B2 JP S6126158B2 JP 3633281 A JP3633281 A JP 3633281A JP 3633281 A JP3633281 A JP 3633281A JP S6126158 B2 JPS6126158 B2 JP S6126158B2
Authority
JP
Japan
Prior art keywords
row
memory cells
nonvolatile memory
gate
commonly connected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3633281A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57150192A (en
Inventor
Masamichi Asano
Hiroshi Iwahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP3633281A priority Critical patent/JPS57150192A/ja
Publication of JPS57150192A publication Critical patent/JPS57150192A/ja
Publication of JPS6126158B2 publication Critical patent/JPS6126158B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits

Landscapes

  • Read Only Memory (AREA)
JP3633281A 1981-03-13 1981-03-13 Non-volatile semiconductor memory device Granted JPS57150192A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3633281A JPS57150192A (en) 1981-03-13 1981-03-13 Non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3633281A JPS57150192A (en) 1981-03-13 1981-03-13 Non-volatile semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS57150192A JPS57150192A (en) 1982-09-16
JPS6126158B2 true JPS6126158B2 (fr) 1986-06-19

Family

ID=12466867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3633281A Granted JPS57150192A (en) 1981-03-13 1981-03-13 Non-volatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS57150192A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4566080A (en) * 1983-07-11 1986-01-21 Signetics Corporation Byte wide EEPROM with individual write circuits
JPS63193400A (ja) * 1987-02-06 1988-08-10 Nec Corp 電気的書込み可能な読出し専用メモリ
JPH0247922A (ja) * 1988-08-09 1990-02-16 Kawasaki Steel Corp プログラマブル論理素子
US5677875A (en) * 1995-02-28 1997-10-14 Nec Corporation Non-volatile semiconductor memory device configured to minimize variations in threshold voltages of non-written memory cells and potentials of selected bit lines
KR100597636B1 (ko) * 2004-06-08 2006-07-05 삼성전자주식회사 상 변화 반도체 메모리 장치
JP2009158094A (ja) * 2009-04-14 2009-07-16 Renesas Technology Corp 不揮発性記憶装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4237547A (en) * 1979-09-17 1980-12-02 Motorola, Inc. Program decoder for shared contact eprom

Also Published As

Publication number Publication date
JPS57150192A (en) 1982-09-16

Similar Documents

Publication Publication Date Title
US6407941B1 (en) Segmented non-volatile memory array with multiple sources having improved source line decode circuitry
US6380636B1 (en) Nonvolatile semiconductor memory device having an array structure suitable to high-density integrationization
US5350938A (en) Nonvolatile semiconductor memory circuit with high speed read-out
KR960003398B1 (ko) 소거모드시에 워드선에 부전압을 인가하는 행디코더회로를 갖춘 불휘발성 반도체기억장치
US6141250A (en) Non-volatile semiconductor memory device
US4425632A (en) Nonvolatile semiconductor memory device
US6240016B1 (en) Method to reduce read gate disturb for flash EEPROM application
US5157281A (en) Level-shifter circuit for integrated circuits
US4543647A (en) Electrically programmable non-volatile semiconductor memory device
EP0320916B1 (fr) Mémoire morte électriquement effaçable et programmable utilisant des cellules à portes empilées
US5051953A (en) EEPROM device including read, write, and erase voltage switching circuits
KR960005621A (ko) 비휘발성 반도체 기억장치 및 그 구동방법
US20070014157A1 (en) Semiconductor device including memory cells and current limiter
JPH09213094A (ja) 半導体記憶装置および半導体記憶装置の情報読出方法
US5341329A (en) Nonvolatile semiconductor memory device capable of preventing read error caused by overerase state and method therefor
JPH02187994A (ja) 半導体記憶装置
JPH06291332A (ja) 半導体記憶装置及びその使用方法
US6141255A (en) 1 transistor cell for EEPROM application
JPS6126158B2 (fr)
JP5477483B2 (ja) 不揮発性半導体メモリ素子、および不揮発性半導体メモリ装置
JPS6120958B2 (fr)
JP3342878B2 (ja) 不揮発性半導体記憶装置
JP3615046B2 (ja) 不揮発性半導体記憶装置
US4333164A (en) Read only memory
EP0757359B1 (fr) Dispositifs de mémoire à semi-conducteurs