JPS61258787A - Information-recording medium - Google Patents
Information-recording mediumInfo
- Publication number
- JPS61258787A JPS61258787A JP60100875A JP10087585A JPS61258787A JP S61258787 A JPS61258787 A JP S61258787A JP 60100875 A JP60100875 A JP 60100875A JP 10087585 A JP10087585 A JP 10087585A JP S61258787 A JPS61258787 A JP S61258787A
- Authority
- JP
- Japan
- Prior art keywords
- recording layer
- recording
- composition
- information
- vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2532—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising metals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
- G11B7/2534—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins polycarbonates [PC]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/254—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers
- G11B7/2542—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers consisting essentially of organic resins
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/254—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers
- G11B7/2548—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers consisting essentially of inorganic materials
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、新規な情報記録用材料、さらに詳しくいえば
所定の基板上に設けた記録層にレーザー光のような活性
光を照射し、照射部分の反射率変化を利用して、情報を
記録するための媒体に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a novel information recording material, more specifically, a recording layer provided on a predetermined substrate is irradiated with active light such as a laser beam, and the irradiated portion is The present invention relates to a medium for recording information using changes in reflectance.
(従来の技術)
これまで、記録可能な情報記録媒体としては、例えば、
基板上に所定の記録材を設け、レーザー光を照射し、情
報に応じた孔を形成させ、この孔の有無による反射率の
差を利用して情報を読み出す記録媒体が知られている。(Prior Art) Until now, as recordable information recording media, for example,
2. Description of the Related Art Recording media are known in which a predetermined recording material is provided on a substrate, irradiated with laser light to form holes in accordance with information, and information is read out using the difference in reflectance depending on the presence or absence of the holes.
この場合、記録層としては、融点の低いTeや旧及びそ
れらを含む合金或いは化合物などが用いられている(特
開昭57−66966号公報)。In this case, Te, which has a low melting point, and alloys or compounds containing Te, which have a low melting point, are used in this case (Japanese Patent Laid-Open No. 57-66966).
また、レーザー光照射により光学特性を変化させ、この
光学特性の変化によって生ずる反射率の変化を利用する
ものも提案されており、例えば、Tea、中にTeの微
粒子を分散させた系(特開昭和50−46317号公@
)や、Sb2Te3/Teなどの2層構造のもの(特開
昭57−186243号公報)が知られている。In addition, systems have been proposed in which the optical properties are changed by laser light irradiation and changes in reflectance caused by this change in optical properties are utilized.For example, a system in which fine particles of Te are dispersed in Tea (JP Publication No. 50-46317 @
), and those having a two-layer structure such as Sb2Te3/Te (Japanese Unexamined Patent Publication No. 186243/1983) are known.
しかしながら、上記の孔開は方式では、孔を形成させる
に際して、加熱の他に、溶融、分散、或いは蒸発という
過程を伴なうために、溶融時の粘度や分散時の表面張力
等が微妙な影響を与え、孔の形状を制御しにくく、また
、孔の内部に残留物が発生したりして、ノイズの増加や
エラーの増加をもたらす欠点がある。However, in the above-mentioned pore-forming method, in addition to heating, the process of melting, dispersion, or evaporation is involved in forming the pores, so the viscosity at the time of melting and the surface tension at the time of dispersion are delicate. It is difficult to control the shape of the hole, and residues are generated inside the hole, resulting in increased noise and errors.
他方、レーザー光照射による加熱によって生じる光学特
性の変化を利用する方式では、記録層の溶融、分散、或
いは蒸発という過程を必要としないために、ピットの形
状を制御することが容易であり、かつ、孔内の残留物発
生という問題もなくなる。しかし、この方式を利用する
従来の記録材では、熱的安定性が乏しく、これが実用上
の障害となっていた。本発明者らは先にこれらの障害に
対し、一般式(Sbx Te+−x ) y Ge+−
y (ただし0.2≦X≦0.7.0.4≦y≦0.
8)で示される組成をもつ記録材が熱的安定性に秀れて
いる事を示した。On the other hand, the method that utilizes changes in optical properties caused by heating by laser beam irradiation does not require the process of melting, dispersing, or evaporating the recording layer, making it easy to control the shape of the pits. , the problem of residue generation in the holes is also eliminated. However, conventional recording materials using this method have poor thermal stability, which has been a practical obstacle. The present inventors previously addressed these obstacles using the general formula (Sbx Te+-x) y Ge+-
y (However, 0.2≦X≦0.7.0.4≦y≦0.
It was shown that the recording material having the composition shown in 8) has excellent thermal stability.
(特願昭60−33779号)。(Patent Application No. 60-33779).
しかし、上記一般式で示される記録材においては、C/
N比、感度の安定性に於ては秀れているが、デジタル信
号記録用に用いた場合、特に高温、高湿下では、ビット
エラー率の安定性は、必らずしも満足すべきものではな
い。However, in the recording material represented by the above general formula, C/
Although it has excellent stability in N ratio and sensitivity, when used for digital signal recording, the stability of bit error rate is not necessarily satisfactory, especially under high temperature and high humidity. isn't it.
発明が解決しようとする問題点
本発明は、このような事情に鑑み、レーザー光照射によ
る光学的特性の変化を利用する情報記録媒体において、
ビットエラー率が、熱的に安定であり、かつ感度、S/
N比に優れた記録材を提供するものである。Problems to be Solved by the Invention In view of the above circumstances, the present invention provides an information recording medium that utilizes changes in optical characteristics caused by laser beam irradiation.
The bit error rate is thermally stable, and the sensitivity and S/
This provides a recording material with an excellent N ratio.
問題点を解決するための手段
本発明は加熱によって光の吸収係数、すなわち透過率が
変化する記録材からなり、光の反射率の変化として情報
の記録を行うものである。Means for Solving the Problems The present invention consists of a recording material whose light absorption coefficient, ie, transmittance, changes when heated, and information is recorded as a change in the light reflectance.
本発明における記録材は、一般式((sb。The recording material in the present invention has the general formula ((sb).
Te+−x ) y t1+−J +−* Mz (
但し、0.2 ≦X≦0.7.0.4≦y≦0.8.0
.05≦2≦0.5の範囲の数であり、Mは、AI%
51% TI% Vs Cr−、Mn1Fe 1CO1
Nis Cus ZnXY% Zrs Nb、 MO%
Rus Rhs Pd。Te+-x) y t1+-J +-* Mz (
However, 0.2≦X≦0.7.0.4≦y≦0.8.0
.. It is a number in the range of 05≦2≦0.5, and M is AI%
51% TI% Vs Cr-, Mn1Fe 1CO1
Nis Cus ZnXY% Zrs Nb, MO%
Rus Rhs Pd.
Ag、Cds Ins Sn、、Las CeX
Pr、Nds S11% Gds Tb5DY%
Hfs Ta、、W、 A11% TI、pb、旧から
選ばれる金属である。)で示される組成を有することを
特徴とするものである。Ag, Cds Ins Sn, Las CeX
Pr, Nds S11% Gds Tb5DY%
Hfs is a metal selected from Ta, W, A11% TI, PB, and old. ) It is characterized by having the composition shown by.
従来、Sb2Te+という化合物は、加熱によって、透
過率が大きく変化するために情報記録材に利用する事が
検討されていたが、変化温度が低いために熱的安定性に
著るしく乏しく、実用上の使用が不可能とされていた。Conventionally, the compound Sb2Te+ was considered to be used in information recording materials because its transmittance changes greatly when heated, but due to the low temperature change, its thermal stability is extremely poor, making it impractical for practical use. was considered impossible to use.
〔[ジャーナル・オプ・アプライド・フィジックス(J
、 A11I)1.Phys) J第54巻(患3)
、第1256〜1260ページ〕。[[Journal of Applied Physics (J
, A11I)1. Phys) J Volume 54 (Patient 3)
, pp. 1256-1260].
本発明者らは、Sb −Teの2元素の特徴を生かし、
Geを添加する事により、光学特性の変化をほとんど変
えることなく、熱的安定性を大巾に改良しうろことを見
出したが、更にこの組成に第4成分としての金属を含有
させる事により、実用上たいせつなビットエラー率の安
定性を更に改良しうる事を見出した。The present inventors took advantage of the characteristics of the two elements Sb-Te,
By adding Ge, we have found that the thermal stability can be greatly improved without changing the optical properties, but by further adding a metal as a fourth component to this composition, We have found that it is possible to further improve the stability of the bit error rate, which is important in practice.
5bXTe及びGeの組成比は、Xが0.2〜0.7
、好ましくは0゜3〜0.6 、yが0.4〜0.8、
好ましくは0.5〜0.7の範囲である。Xの値が0.
2より小さい場合及び0.7より大きい場合には、加熱
による吸収係数の変化が小さく、十分なコントラストが
得られず、したがってS/N比が低くなる。The composition ratio of 5bXTe and Ge is such that X is 0.2 to 0.7
, preferably 0°3 to 0.6, y is 0.4 to 0.8,
Preferably it is in the range of 0.5 to 0.7. The value of X is 0.
If it is smaller than 2 or larger than 0.7, the change in absorption coefficient due to heating is small, and sufficient contrast cannot be obtained, resulting in a low S/N ratio.
一方、yの値が0.8より大きい場合は、加熱による吸
収係数の変化が低温で生じ、熱的安定性が悪くなり、y
の値が0.4より小さい場合には、吸収係数の変化が小
さく 、S/N比が極端に低くなる。On the other hand, if the value of y is larger than 0.8, the absorption coefficient changes due to heating at low temperatures, resulting in poor thermal stability and y
When the value of is smaller than 0.4, the change in the absorption coefficient is small and the S/N ratio becomes extremely low.
第4成分の金属Mとしては、AI% Si、、Ti、
V% Cr5Mn5 Fe、、Co、Ni、、011%
Zns Y 、 Zr−、Nb、 Mo、Ru。The fourth component metal M is AI% Si, Ti,
V% Cr5Mn5 Fe, Co, Ni, 011%
ZnsY, Zr-, Nb, Mo, Ru.
Rhs Pds Ag、 Cd、 Inz Sn、、L
as Ces Prs Nds Sm5Gd、、 Tb
s DV% Hfs Tas W% ALI、 TI、
PblBl%等が使用でき、特にSns Bis In
、、 Tis Cr、、 Fe5CoSNisCLI%
Znが効果がある。Zの値は0.01〜0.5が好ま
しい範囲であるが、特に好ましくは、0.1〜0.3の
範囲である。Zが0.01より小さい場合には、ビット
エラー率の安定性には殆んど寄与せず、又0.5より大
きい場合には、かえって安定性は低下する。Rhs Pds Ag, Cd, Inz Sn,,L
as Ces Prs Nds Sm5Gd,, Tb
s DV% Hfs Tas W% ALI, TI,
PblBl% etc. can be used, especially Sns Bis In
,, TisCr,, Fe5CoSNisCLI%
Zn is effective. The value of Z is preferably in the range of 0.01 to 0.5, particularly preferably in the range of 0.1 to 0.3. When Z is smaller than 0.01, it hardly contributes to the stability of the bit error rate, and when it is larger than 0.5, the stability deteriorates on the contrary.
記録層の形成には、真空蒸着法、スバッタリング法、イ
オンブレーティング法等が用いられる。A vacuum evaporation method, a sputtering method, an ion blating method, etc. are used to form the recording layer.
組成のコントロールには、真空蒸着法の場合には、4元
共蒸着法や、或いは特定組成の蒸着物をフラッシュ蒸着
法で行うのが好ましい。また、スパッタリング法の場合
は、特定組成のターゲット材料を用いたり、1つの元素
或いは化合物のターゲツト材の上に、他の元素或いは化
合物の破片を置いて行うのが有利である。組成の厚み方
向分布については、4つの元素が均一に混るようにした
方が、S/N比などの特性上好ましい。To control the composition, in the case of a vacuum deposition method, it is preferable to perform a four-component co-evaporation method or a flash deposition method of a deposited material having a specific composition. In the case of sputtering, it is advantageous to use a target material of a specific composition or to place pieces of one element or compound on a target material of another element or compound. Regarding the distribution of the composition in the thickness direction, it is preferable for the four elements to be uniformly mixed in terms of characteristics such as the S/N ratio.
記録層単独で用いても実用上充分な特性が得られるが、
更に記録層の上又は下に反射層を設けた方が高いS/N
比を得ることができるので、より好ましい。Practically sufficient characteristics can be obtained even when the recording layer is used alone, but
Furthermore, providing a reflective layer above or below the recording layer results in a higher S/N.
This is more preferable because the ratio can be obtained.
記録層を単独で使用する場合の膜厚は500Å以上、好
ましくは、800人から2000人の間が望ましい。他
方、記録層の上或いは下に反射層を設ける場合には、記
録層の膜厚は、反射層の材料によって異なるが、200
人からl000人の間が好ましい。When the recording layer is used alone, the film thickness is 500 Å or more, preferably between 800 and 2000 Å. On the other hand, when a reflective layer is provided above or below the recording layer, the thickness of the recording layer varies depending on the material of the reflective layer, but is approximately 200 mm thick.
Preferably between 1 and 1000 people.
反射層に用いることのできる材料としては、特に制限さ
れる事はないが、■、Tis Cr、 C0% Ni、
Se、、Zrs AgX In、 Sn、、 S
b−、Te、 Pts 八us pb、 Bi
等の金属、或いはそれらの合金が好ましい。Materials that can be used for the reflective layer are not particularly limited, but include ■, Tis Cr, C0% Ni,
Se,, Zrs AgX In, Sn,, S
b-, Te, Pts 8us pb, Bi
metals such as, or alloys thereof are preferable.
特に、AI% 5bSBi及びBizTe=が好ましい
。Particularly preferred are AI% 5bSBi and BizTe=.
反射層は、これらの元素や合金の単独でも良いが、2種
以上の元素或いは合金を積層してもよい。The reflective layer may be made of one of these elements or alloys, or may be a stack of two or more elements or alloys.
反射層の膜厚は、100Å以上が好ましく、感度の点か
ら100人から1000人の間が最も好ましい。The thickness of the reflective layer is preferably 100 Å or more, and most preferably between 100 and 1000 Å from the viewpoint of sensitivity.
本発明において、記録層の少くとも上又は下に、或いは
反射層の少くとも上又は下に金属酸化物や窒化物等の金
属化合物からなる層、或いは、有機物からなる層を設け
ることは、記録層或いは反射層の経時的な劣化を防ぐ意
味でより好ましい。金属酸化物の例として、AI、G
% 5i1Ges Zrs 5esTi1 Tes
V、Iff、、Ces S11% LaX Sm、
、Y、Sbs Ta5Pbs Biなどから選ばれた
元素の酸化物が好ましい。In the present invention, providing a layer made of a metal compound such as a metal oxide or nitride, or a layer made of an organic substance at least above or below the recording layer or at least above or below the reflective layer is effective for recording. It is more preferable in the sense of preventing deterioration of the layer or reflective layer over time. Examples of metal oxides include AI, G
% 5i1Ges Zrs 5esTi1 Tes
V, If,, Ces S11% LaX Sm,
, Y, Sbs Ta5 Pbs Bi, etc. are preferred.
また、これらの金属酸化物の単独でも、複合酸化物でも
、1種または2種以上の金属酸化物の積層でも用いて良
い。 1金
属窒化物の例としては、CrN % TtN % ’
1rNsAIN等がクランクが生じにくく好ましい。有
機物としては、各種のフタロシアニン系顔料や、フッ素
系高分子が好ましい。Further, these metal oxides may be used alone, in a composite oxide, or in a stack of one or more metal oxides. 1 Examples of metal nitrides include CrN%TtN%'
1rNsAIN and the like are preferable because they are less prone to cranking. As the organic substance, various phthalocyanine pigments and fluorine-based polymers are preferable.
金属酸化物、金属窒化物、或いは有機物の膜厚は、10
0 人力)ら10,000人、より好ましくは、200
人から1000人が好ましい。The film thickness of metal oxide, metal nitride, or organic substance is 10
0 manpower) or 10,000 people, more preferably 200 people
Preferably 1000 people.
本発明における基板としては、ガラスやガラス上に光硬
化性樹脂を設けたもの、ポリカーボネート、アクリル樹
脂、エポキシ樹脂、スチレン樹脂などのプラスチック基
板、A1合金などの金属板なとが用いられる。As the substrate in the present invention, glass, a photocurable resin on glass, a plastic substrate such as polycarbonate, acrylic resin, epoxy resin, or styrene resin, or a metal plate such as A1 alloy are used.
本発明の記録媒体を実際に情報記録媒体として用いる場
合は、基板上に記録材を設けた2枚の同一の円板を、記
録材を設けた面を互いに対向させた状態で、スペーサー
を介して接着一体化した、いわゆるエアーサンドイッチ
構造や、2枚の同一の円板を、記録材を設けた面を互い
に対向させた状態で、スペーサーを介さずに、全面で接
着し一体化させた、いわゆる全面接着構造、或いはこれ
らとは全く異なり、フィルム状のシートの上に記録材を
設け、このシートをロール状に巻いた構造等いずれの構
造にしてもよい。When the recording medium of the present invention is actually used as an information recording medium, two identical disks each having a recording material provided on a substrate are placed with the surfaces provided with the recording material facing each other with a spacer interposed therebetween. A so-called air sandwich structure is used, in which two identical discs are bonded and integrated over their entire surface without a spacer, with the surfaces on which the recording material is provided facing each other. The structure may be a so-called full-surface adhesive structure, or a structure in which a recording material is provided on a film-like sheet and this sheet is wound into a roll, which is completely different from these structures.
実施例 以下に本発明を実施例によって詳細に説明する。Example The present invention will be explained in detail below by way of examples.
参考例 1
射出成形法により、あらかじめ溝(深さ700人、中0
.65 p m 、ピッチ1.6 、cam)を設けた
厚さ1.5mmのアクリル基板上に、抵抗加熱真空蒸着
法によりSb、 Te、 Geを入れたMoポートから
3元共蒸着によってSbO,l!l TeO,35G
e6.3の組成比の膜を300人の厚みに形成し、更に
その上にSb 200人を同じく抵抗加熱法を設けた。Reference example 1 Groove (700 mm deep, medium 0
.. On a 1.5 mm thick acrylic substrate with a pitch of 65 p m, pitch 1.6, cam), SbO, L was deposited by ternary co-evaporation from a Mo port into which Sb, Te, and Ge were introduced by resistance heating vacuum evaporation. ! lTeO,35G
A film having a composition ratio of e6.3 was formed to a thickness of 300 mm, and 200 mm of Sb was further applied thereon by the same resistance heating method.
この時の真空度は3×10− ’Torrであった。こ
の円板上サンプルを90゜rpmの速度で回転させ、透
明な基板ごしに半導体レーザー(波長830 nm)の
光を集光させて照射し、3 MHzの単一周波数の信号
を書き込んだ。The degree of vacuum at this time was 3 x 10-' Torr. This disk sample was rotated at a speed of 90 rpm, and a semiconductor laser (wavelength: 830 nm) was focused and irradiated through the transparent substrate to write a signal with a single frequency of 3 MHz.
この時、円板上の直径140鶴の所に信号を記録するに
用したレーザーパワーは、記録面上で、41であった。At this time, the laser power used to record a signal at a location with a diameter of 140 mm on the disk was 41 mm on the recording surface.
信号の再生には、同一波長の半導体レーザー光を用い、
1.2m−で再生した。To reproduce the signal, semiconductor laser light of the same wavelength is used,
It was played back at 1.2m.
信号のC/N比はバンド巾30K)Izにおいて52d
Bであった。The C/N ratio of the signal is 52d at a band width of 30K)
It was B.
この記録媒体のビットエラー率は3X10−’であった
。このサンプルを60℃、82%RHの条件下で7日間
の加速テストを行った後、信号の再生をした所、C/N
比は不変であったが、エラー率は3×10−4と一桁低
下していた。又、加速テスト後の書込テストでは、感度
、C/N比とも不変であったが、エラー率は6X10−
Sであった。The bit error rate of this recording medium was 3×10−′. After performing an acceleration test on this sample for 7 days under the conditions of 60℃ and 82%RH, when the signal was regenerated, the C/N was
Although the ratio remained unchanged, the error rate decreased by one order of magnitude to 3 x 10-4. Also, in the write test after the acceleration test, both the sensitivity and C/N ratio remained unchanged, but the error rate was 6X10-
It was S.
従来の記録媒体の評価はC/N比で行ってきたがデジタ
ル信号を記録する実用上の特性評価項目であるビットエ
ラー率では、記録層はより優れた安定性が要求される事
が判った。Conventional recording media have been evaluated based on the C/N ratio, but it has been found that the recording layer needs to have better stability in terms of bit error rate, which is a practical characteristic evaluation item for recording digital signals. .
実施例 1
参考例と同様のアクリル基板上に抵抗加熱法により、S
bs Tes Gesと表−1に示す金属との4元共蒸
着により、(Sbo、+s Teo、*s Geo、:
+o) 9+IMIO(ここでMは表−1に示す金属)
の組成の膜を形成した。膜厚は400人であった。更に
この上にsbの200人の膜をのせた。参考例1と同様
の方法でこの記録層を評価した所、表−1の結果を得た
。Example 1 S
By four-component co-evaporation of bs Tes Ges and the metals shown in Table 1, (Sbo, +s Teo, *s Geo,:
+o) 9+IMIO (here M is the metal shown in Table-1)
A film with the composition was formed. The film thickness was 400 people. Furthermore, 200 sb membranes were placed on top of this. This recording layer was evaluated in the same manner as in Reference Example 1, and the results shown in Table 1 were obtained.
このサンプルを60℃、82%RHの条件下で、加速テ
ストを行った結果を表−1に示す。Table 1 shows the results of an accelerated test performed on this sample under conditions of 60° C. and 82% RH.
表−1より、Sn、 B1XInがビットエラーの安定
化に効果があるのが判る。From Table 1, it can be seen that Sn and B1XIn are effective in stabilizing bit errors.
実施例 2
厚さ1.5 mm、直径305mmの強化ガラスの円板
上に、光硬化性樹脂を用いて、あらかじめ溝(深さ70
0人、巾0.6 μm 、ピッチ1.6 μm )を形
成した基板上に、スパッタ法により、Sbo、 zs
Teo、 35Ge、、4の組成になる様、Geのタ
ーゲットの上にSb2Te3のチップをのせ、更に表−
2に示す金属のチップをのせて、添加する金属の組成比
が上記の組成、(Sbo、zsTeo、3sGeo、4
)に対して5%となる様に制御して、スパッタし、膜厚
400人の所定の膜を形成した。更に同一のスパッタ装
置内で、AIターゲットから、前記の膜の上に200
人のA1膜を形成した。この記録媒体を実施例1と同様
の方法で評価し、表−2の結果を得た。又、更にこれら
の記録媒体を60℃、82%RHT日の加速テストにさ
らした後の評価結果を表−2に示した。Example 2 Grooves (70 mm in depth) were formed in advance on a tempered glass disc with a thickness of 1.5 mm and a diameter of 305 mm using a photocurable resin.
By sputtering, Sbo, zs
A Sb2Te3 chip was placed on the Ge target so that the composition was Teo, 35Ge, 4, and the table
2, and the composition ratio of the added metals is as shown above (Sbo, zsTeo, 3sGeo, 4
), sputtering was performed to form a predetermined film with a thickness of 400 mm. Further, in the same sputtering apparatus, 200 nm was applied from the AI target onto the above film.
A human A1 membrane was formed. This recording medium was evaluated in the same manner as in Example 1, and the results shown in Table 2 were obtained. Furthermore, Table 2 shows the evaluation results after exposing these recording media to an accelerated test at 60° C. and 82% RHT day.
表−2より、TI% Cr−、Niがエラー率の安定性
に効果がある事が判る。From Table 2, it can be seen that TI% Cr- and Ni are effective in stabilizing the error rate.
表2
発明の効果
本発明によれば、レーザー光等の照射によって、高感度
かつ高S/N比で情報が記録され、かつ、ビットエラー
率の安定性に優れた、実用上大きなメリットを有する媒
体を提供する事ができる。Table 2 Effects of the Invention According to the present invention, information can be recorded with high sensitivity and a high S/N ratio by irradiation with laser light, etc., and the bit error rate has excellent stability, which has great practical advantages. Media can be provided.
特許出願人 旭化成工業株式会社 手続補正書 昭和60年 7月3日 特許庁長官 宇 賀 道 部 殿 1、事件の表示 昭和60年特許願第 100875号 2、発明の名称 情報の記録媒体 3、補正をする者 事件との関係 特許出願人 大阪府大阪市北区堂島浜1丁目2番6号4、補正の対象 明細書全文(内容に変更なし)Patent applicant: Asahi Kasei Industries, Ltd. Procedural amendment July 3, 1985 Director General of the Patent Office Michibe Uga 1.Display of the incident 1985 Patent Application No. 100875 2. Name of the invention Information recording medium 3. Person who makes corrections Relationship to the case Patent applicant 1-2-6-4 Dojimahama, Kita-ku, Osaka-shi, Osaka Prefecture, subject to amendment Full statement (no changes to the contents)
Claims (1)
なる記録層を設け、該吸収係数の変化によって生じる光
の反射率の変化によって情報を記録する情報記録用媒体
において、該記録層が、一般式 {(Sb_xTe_1_−_x)_yGe_1_−_y
}_1_−_zM_z(ただし、xは0.2〜0.7、
yは0.4〜0.8、zは0.01〜0.5の範囲の数
であり、Mは、Al、Si、Ti、V、N、Cr、Mn
、Fe、Co、Ni、Cu、Zn、Y、Zr、Nb、M
o、Ru、Rh、Pd、Ag、Cd、In、Sn、La
、Ce、Pr、Nd、Sm、Gd、Tb、Dy、Hf、
Ta、W、Au、Tl、Pd、Biから選ばれる金属で
ある。)で示される組成を有することを特徴とする情報
記録用媒体。[Claims] An information recording medium in which a recording layer made of a material whose light absorption coefficient changes when heated is provided on a substrate, and information is recorded by a change in light reflectance caused by the change in the absorption coefficient. , the recording layer has the general formula {(Sb_xTe_1_-_x)_yGe_1_-_y
}_1_−_zM_z (where x is 0.2 to 0.7,
y is a number in the range of 0.4 to 0.8, z is a number in the range of 0.01 to 0.5, and M is Al, Si, Ti, V, N, Cr, Mn
, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, M
o, Ru, Rh, Pd, Ag, Cd, In, Sn, La
, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Hf,
The metal is selected from Ta, W, Au, Tl, Pd, and Bi. ) An information recording medium characterized by having a composition represented by:
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60100875A JPH0725200B2 (en) | 1985-05-13 | 1985-05-13 | Information recording medium |
EP19860301275 EP0195532B1 (en) | 1985-02-22 | 1986-02-21 | An information recording medium |
US06/831,577 US4670345A (en) | 1985-02-22 | 1986-02-21 | Information recording medium |
CA000502376A CA1236693A (en) | 1985-02-22 | 1986-02-21 | Information recording medium |
DE8686301275T DE3671122D1 (en) | 1985-02-22 | 1986-02-21 | INFORMATION RECORDING MEDIUM. |
AU54074/86A AU585943B2 (en) | 1985-02-22 | 1986-02-24 | An information recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60100875A JPH0725200B2 (en) | 1985-05-13 | 1985-05-13 | Information recording medium |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61258787A true JPS61258787A (en) | 1986-11-17 |
JPH0725200B2 JPH0725200B2 (en) | 1995-03-22 |
Family
ID=14285492
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60100875A Expired - Lifetime JPH0725200B2 (en) | 1985-02-22 | 1985-05-13 | Information recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0725200B2 (en) |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62152786A (en) * | 1985-12-27 | 1987-07-07 | Hitachi Ltd | Information-recording thin film |
JPS63251290A (en) * | 1987-04-08 | 1988-10-18 | Hitachi Ltd | Optical recording medium, method for regeneration and application thereof |
JPS6414083A (en) * | 1987-07-08 | 1989-01-18 | Asahi Chemical Ind | Data recording method |
JPH01180387A (en) * | 1988-01-12 | 1989-07-18 | Toray Ind Inc | Information recording medium |
JPH01211249A (en) * | 1988-02-17 | 1989-08-24 | Asahi Chem Ind Co Ltd | Optical recording medium |
EP0395053A2 (en) * | 1989-04-28 | 1990-10-31 | Daicel Chemical Industries, Ltd. | Optical information recording medium |
US5055331A (en) * | 1990-07-02 | 1991-10-08 | Eastman Kodak Company | Phase-change optical recording media |
US5294523A (en) * | 1988-08-01 | 1994-03-15 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium |
US5688574A (en) * | 1995-03-14 | 1997-11-18 | Hitachi Maxell, Ltd. | Optical recording medium |
KR19980059949A (en) * | 1996-12-31 | 1998-10-07 | 구자홍 | Phase change optical disk and manufacturing method thereof |
US6149999A (en) * | 1996-02-28 | 2000-11-21 | Asahi Kasei Kogyo Kabushiki Kaisha | Method of designing a phase-change optical recording medium, and a phase-change optical recording medium |
WO2002070273A1 (en) * | 2001-03-06 | 2002-09-12 | Mitsubishi Chemical Corporation | Optical information recording medium and recording / erasing method |
KR100453540B1 (en) * | 2001-01-03 | 2004-10-22 | 내셔널 사이언스 카운실 | Rewritable phase-change optical recording composition and rewritable phase-change optical disk |
US7166415B2 (en) * | 2002-03-05 | 2007-01-23 | Mitsubishi Kagaku Media Co., Ltd. | Phase-change recording material used for information recording medium and information recording medium employing it |
US7241549B2 (en) | 2001-09-18 | 2007-07-10 | Ricoh Company, Ltd. | Information recording medium |
EP2178086A2 (en) | 1998-09-09 | 2010-04-21 | Mitsubishi Kagaku Media Co., Ltd. | Optical recording method |
US8000198B2 (en) | 2005-06-06 | 2011-08-16 | Ricoh Company, Ltd. | Phase-change type optical recording medium and reproduction method and apparatus for such a recording medium |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6042095A (en) * | 1983-08-19 | 1985-03-06 | Hitachi Ltd | Information recording member |
JPS612594A (en) * | 1984-06-15 | 1986-01-08 | Matsushita Electric Ind Co Ltd | Optical information-recording member |
-
1985
- 1985-05-13 JP JP60100875A patent/JPH0725200B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6042095A (en) * | 1983-08-19 | 1985-03-06 | Hitachi Ltd | Information recording member |
JPS612594A (en) * | 1984-06-15 | 1986-01-08 | Matsushita Electric Ind Co Ltd | Optical information-recording member |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62152786A (en) * | 1985-12-27 | 1987-07-07 | Hitachi Ltd | Information-recording thin film |
JPS63251290A (en) * | 1987-04-08 | 1988-10-18 | Hitachi Ltd | Optical recording medium, method for regeneration and application thereof |
JPS6414083A (en) * | 1987-07-08 | 1989-01-18 | Asahi Chemical Ind | Data recording method |
JPH01180387A (en) * | 1988-01-12 | 1989-07-18 | Toray Ind Inc | Information recording medium |
JPH01211249A (en) * | 1988-02-17 | 1989-08-24 | Asahi Chem Ind Co Ltd | Optical recording medium |
US5294523A (en) * | 1988-08-01 | 1994-03-15 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium |
EP0395053A2 (en) * | 1989-04-28 | 1990-10-31 | Daicel Chemical Industries, Ltd. | Optical information recording medium |
US5413893A (en) * | 1989-04-28 | 1995-05-09 | Daicel Chemical Industries, Ltd. | Optical information recording medium |
US5055331A (en) * | 1990-07-02 | 1991-10-08 | Eastman Kodak Company | Phase-change optical recording media |
US5688574A (en) * | 1995-03-14 | 1997-11-18 | Hitachi Maxell, Ltd. | Optical recording medium |
US6149999A (en) * | 1996-02-28 | 2000-11-21 | Asahi Kasei Kogyo Kabushiki Kaisha | Method of designing a phase-change optical recording medium, and a phase-change optical recording medium |
KR19980059949A (en) * | 1996-12-31 | 1998-10-07 | 구자홍 | Phase change optical disk and manufacturing method thereof |
EP2178086A2 (en) | 1998-09-09 | 2010-04-21 | Mitsubishi Kagaku Media Co., Ltd. | Optical recording method |
KR100453540B1 (en) * | 2001-01-03 | 2004-10-22 | 내셔널 사이언스 카운실 | Rewritable phase-change optical recording composition and rewritable phase-change optical disk |
WO2002070273A1 (en) * | 2001-03-06 | 2002-09-12 | Mitsubishi Chemical Corporation | Optical information recording medium and recording / erasing method |
US6707783B2 (en) | 2001-03-06 | 2004-03-16 | Mitsubishi Chemical Corporation | Optical recording medium and recording/erasing method |
US7241549B2 (en) | 2001-09-18 | 2007-07-10 | Ricoh Company, Ltd. | Information recording medium |
US7166415B2 (en) * | 2002-03-05 | 2007-01-23 | Mitsubishi Kagaku Media Co., Ltd. | Phase-change recording material used for information recording medium and information recording medium employing it |
US7659049B2 (en) | 2002-03-05 | 2010-02-09 | Mitsubishi Kagaku Media Co., Ltd. | Phase-change recording material used for information recording medium and information recording medium employing it |
US8000198B2 (en) | 2005-06-06 | 2011-08-16 | Ricoh Company, Ltd. | Phase-change type optical recording medium and reproduction method and apparatus for such a recording medium |
Also Published As
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