JPS6186287A - Information-recording member - Google Patents

Abstract

PURPOSE:To provide the title member of which the average composition in the thickness direction of a thin information-recording film is represented by specified formulas and which is produced by a simple process, has favorable reproduction property and is stable for a long period of time. CONSTITUTION:An information-recording member comprising on a base a thin information-recording film which shows a change in arrangement of atoms when being irradiated with recording beams, wherein the average composition in the thickness direction of the thin film is represented by the formula, wherein 2.1<=X/Z<=9; 25<=Y<=95; 0<=alpha<=65; M is Sn, In, Ga or Pb; and A is Sb, Bi, Be, Mg, Ca, Sr, Ba, Al, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Tl, B, C, Si, Ge, N, P, As, O, S, F or H.

Description

[Detailed Description of the Invention] [Field of Application of the Invention] The present invention applies FM modulation of analog signals such as video and audio onto a thin film for recording information provided on a predetermined substrate using a recording beam such as a laser beam. The present invention relates to an information recording member that makes it possible to record digital information such as electronic computer data, facto millimeter signals, and digital audio signals in real time.

[Background of the invention]

There are various recording principles for recording on thin films using laser light, but recording based on changes in atomic arrangement such as phase transition of the film material and photodarkening involves almost no deformation of the film, so it is not possible to directly bond two discs together. It has the advantage of being able to produce double-sided discs. Furthermore, if the composition is appropriately selected, it is also possible to rewrite records. Many inventions relating to this type of recording have been filed, the earliest being disclosed in Japanese Patent Publication No. 47-26897. Here, Te-Ge system, As-Te-Ge system, T
Many thin films such as e-0 series are described.

Furthermore, Japanese Patent Publication No. 50-3725 discloses a T e -0 thin film, and Japanese Patent Publication No. 55-28530 discloses a T e -0 thin film.
0-S e based and T e -0-S based thin films are described. However, it is extremely difficult to form a film with any of these materials, and the stability of the amorphous state is not sufficient.

[Purpose of the invention]

SUMMARY OF THE INVENTION Therefore, an object of the present invention is to eliminate the drawbacks of the prior art described above, and to provide an information recording member that has a simple manufacturing process, good reproducibility, and is stable for a long period of time.

[Summary of the invention]

In order to achieve the above object, in the information recording member of the present invention, the average composition in the thickness direction of the information recording thin film is expressed by the general formula MeTeYSeAα. However, x, y, and z each satisfy 25≦Y≦95.2.
The value is in the range of 1≦X/Z≦9, O<a<65, and M is Sn, In, or Ga.

Represents at least one element selected from the group consisting of pb. A is an element other than Te, Se, and M, namely Sb, Bi, Be, Mg, and Ca.

Sr, Bat AQ, Sc, Y, La+ Ce, Pr+
N d + P m y S rn + E u r
G d r T b t D y gHa, Tit Z
r, Hf, V, Nb, Ta, Cr.

Mo, W2Mn, Tc, Re, Fe, Ru, Os.

Co, Rh, I re Ni+ Pd+ Ptt C
utAg, Au, Zn, Cd, Tl, B+ C, Si
.

Represents at least one element selected from the group consisting of Ge, N, PtAs, O, S, F+H, etc.

A more preferable range of X, Y, Z and α is 2.5≦X
/Z<4.0.35≦Y≦65. O<a<30.

It is preferable to use α2 because it simplifies manufacturing.

Of course, any of these elements can be substituted, for example, Li, Na, Rb, Cs, CG.

A small amount of impurities such as Br, It He, Ne, Ar, Kr, Xe, and Rn may be present. Even within the above preferred composition range, the properties of the recording film change depending on the value of Y.
In the range of 75≦Y≦95, the storage life of records is somewhat short, but the advantage is that the laser power for recording and erasing can be low, and even if a protective film with low heat resistance is used, noise will not increase due to rewriting. Yes. In the range of 55≦Y≦75, both the recording/erasing laser power and the storage life are medium.

In the range of 25≦Y≦55, the crystallization temperature can be increased and the shelf life can be extended.

Therefore, it is better to appropriately select the value of Y depending on the application.

Among the elements represented by M, particularly preferred are Sn
, In, and especially Sn is preferable because it increases the stability of the amorphous state. However, vacuum deposition of In is easier.

The next preferred material is at least one of Ga and Pb.

Properties often improve when two or more elements represented by M and A coexist; for example, In and Sb, Sn and G
e, Pb and Sn, Sn and Bi.

Sn and S, Sn and Ni, Sn and Ti, In and pb.

In and Bi, Sb and pb, sb and Sn, As and Sn
A combination of HA s and pb is effective. Among these, a combination of Sn and other elements is preferred.

The distribution of the content of the element represented by M in the film thickness direction is arbitrary, but it increases near one of the surfaces of the recording thin film (sometimes at the interface with another layer) than inside it. It is preferable to do so.

This has the effect of preventing natural crystallization near the film interface where oxidation and crystal nuclei are likely to occur. For the same reason, the distribution of Se content in the film thickness direction is arbitrary, but it is preferable that it increases near the surface (interface). Te, Se represented by A.

Elements other than M do not contribute significantly to the recording/erasing mechanism when added, but depending on the method of addition, up to 65% of the elements can be added without causing any major adverse effects. These elements may be introduced into the film in the form of oxides such as S i O, or high melting point compounds such as fluorides and sulfides. In this case, the transmittance of the recording film is increased, and the light reflected from the front surface of the recording film and the light reflected from the back surface are easily canceled by interference, contributing to improved sensitivity and signal level. Further, these elements are Te and Se.

An unrefined raw material of M may be used to introduce it into the recording film.

Manufacturing costs can be reduced by using such low-cost elements and raw materials.

The recording film of the present invention may be a film in which an organic substance is mixed by co-evaporation, rotational sequential deposition, sputtering, or the like.

It is preferable that at least one surface of the recording film of the present invention is closely protected by another substance. It is even better if both sides are protected. These protective layers may be formed of an acrylic resin plate or a polycarbonate resin plate, which is also a substrate, or an organic material such as an epoxy resin, an acrylic resin, or a polystyrene resin, and may be formed of an oxide, sulfide, fluoride, carbide, or nitride. It may be formed of a substance, a metal, or an inorganic substance such as carbon. A composite membrane of these may also be used. The main component is glass, quartz, sapphire, or aluminum.

The substrate can also serve as one inorganic protective layer. It is preferable for heat resistance to be in close contact with an inorganic substance. However, increasing the thickness of the inorganic layer tends to cause at least one of cracking, decreased transmittance, and decreased sensitivity, so the thick organic layer is tightly attached to the opposite side of the inorganic layer from the recording film. It is preferable to do so. This organic layer may be a substrate.

This also makes deformation less likely to occur. As organic matter,
For example, polystyrene resins, acrylic resins, polycarbonate resins, epoxy resins, ethylene-vinyl acetate copolymers known as hot melt adhesives, and adhesives are used. It may also be an ultraviolet curing resin. In the case of a protective layer made of an inorganic substance, it may be formed as it is, but it can be formed by reactive sputtering or after forming a film made of at least one element among metals, semimetals, and semiconductors.
Production is facilitated by reacting with at least one of oxygen, sulfur, and nitrogen. Examples of inorganic protective layers include those whose main components are CeO, La, 01°Si○, S
iO,,I n,o,,AQ20. , GeO.

Gem2. PbO, Y2O3+ Ti0z+ SnO.

5nOz+ BizO, Te○21W○2. W.O.

CdS, ZnS, CdSe, Zn5e, In25J.

I n, S e39 S bzs3t S bzs e
3+ Ga2s3-+Ga, Se,, MgF3. Ce
F3. Ca Fil GeS.

GeSe, GeSe2. SnS, 5nSe, PbS.

Pb5e+ Bi, 5e3t BizS, TaN.

It has a composition close to one of 5i3N4t AQN and C.

Among these, Si and AQ are preferred because their surface reflectance is not very high and their films are stable and strong.

Nitride of at least one of Ti is preferred.

Next preferred are Si, Ge, AQ, and Sn.

It is an oxide of at least one of Ce, In, Ti, and Y. When recording by phase transition, it is preferable to crystallize the entire surface of the recording film in advance, however, if an organic substance is used for the substrate.

Since the substrate cannot be heated to high temperatures, other methods of crystallization are required. In that case, it is preferable to perform ultraviolet irradiation and heating, light irradiation from a flash lamp, light irradiation from a high-power gas laser, etc. In the case of light irradiation from a gas laser, it is efficient to set the light spot diameter (half width) to 5 μm or more and 5 mm or less. Crystallization may occur only on recording tracks, and the area between tracks may remain amorphous.

Of course, it is also possible to record on an amorphous recording thin film by crystallization.

Generally, when a thin film is irradiated with light, the reflected light is a superposition of the reflected light from the thin film surface and the reflected light from the thin film surface, causing interference. When reading signals based on changes in reflectance, by providing a light reflecting (absorbing) layer close to the recording film, the effect of interference can be increased and the readout signal can be increased. In order to further enhance the interference effect, it is preferable to provide an intermediate layer between the recording film and the reflective (absorbing) layer. The intermediate layer is preferably made of a material that does not absorb much of the light used for reading. The thickness of the intermediate layer is 10 nm or more, 400 nm or more.
It is preferable to set the film thickness to be less than nm and at which the reflectance of the recording member approaches a minimum value near the wavelength of the readout light in the recording state or erasing state. The reflective layer may be formed either between the recording film and the substrate or on the opposite side.

The preferable range of film thickness of each part is as follows.

Recording film: 3 nm or more and 300 nm or less, particularly preferably 65 nm or more and 130 nm or less.・Inorganic protective layer: I
nm or more, 5 μm or less (0.1 to 20 mm when protecting with the inorganic substrate itself) Organic protective layer: 10 nm or more, 10IIn or less Intermediate layer: 10 nm or more, 400 nm
The following light reflection layer: Formation methods for each layer of 5 nm or more and 300 nm or more include vacuum evaporation, gas evaporation, sputtering, ion beam evaporation, ion blating, electron beam evaporation, injection molding, casting, spin coating, plasma polymerization, etc. Select one of them as appropriate.

The recording film of the present invention does not necessarily need to utilize a change between an amorphous state and a crystalline state for recording, but it is sufficient to cause a change in optical properties by some kind of atomic arrangement change.

The recording member of the present invention can be used not only in the form of a disk but also in other forms such as a tape or a card.

[Embodiments of the invention]

The present invention will be explained in detail below using examples.

Example 1 A replica of a tracking groove was formed on the surface of a disk-shaped chemically strengthened glass plate with a diameter of 30 ann and a thickness of 1.2 m using an ultraviolet curing resin, and the circumference was divided into 64 sectors.
At the beginning of each sector, a track address, a sector address, etc. are placed in the form of uneven pits in the mountainous part between the grooves (this part is called a part of the header) on the substrate 14, which is first coated with anti-reflection by magnetron sputtering. A 5i3n4 layer with a thickness of about 1100 nm was formed as a protective layer. Next, this substrate was placed in a vacuum evaporation apparatus having an internal structure as shown in FIG. Four vapor deposition boats 1, 2, 3.4 are arranged in the vapor deposition apparatus. One of these can be replaced with an electron beam evaporation source. These boats are located below the portion on which information is to be recorded on the substrate 14, and approximately on the circumference whose center is the same as the central axis 5 of rotation of the substrate. 3 of 4 boats
Te, Se, and Sn were added to each.

Between each boat and the board are masks 6.7 and 8.9 with fan-shaped slits and shutters 10° and 11.12, respectively.
．． 13 are arranged. While the substrate 14 was being rotated at 120 rpm, a current was applied to each boat to evaporate the deposition raw material in the boats.

The amount of evaporation from each boat is measured by the crystal film thickness monitor 15.
．． 16, 17, and 18, and the current flowing through the boat was controlled so that the evaporation rate was constant.

As shown in FIG.
A recording film 21 having a composition of n25T eso Se was deposited to a thickness of about 1100 nm. This film thickness causes interference between light reflected from the front and back surfaces of the recording film, and when the recording film is in an amorphous state or a state with poor crystallinity, the reflectance becomes minimal near the wavelength of the laser beam used for readout. The film thickness is as follows.

Next, Si3 was deposited again by magnetron sputtering.
The protective layer 22 having a composition close to N4 was made to have a thickness of about 40 nm. In the same way, Si and N are placed on another substrate 19'.
A protective layer 20' having a composition close to 4, Sn, , Te, , Se
A recording film 21' having a composition of , and a protective layer 22' having a composition close to Si, N4 were deposited. After coating and forming an ultraviolet curable resin layer 23,23' to a thickness of about 50 μm on each of the vapor deposited films of the two substrates 19, 19' thus obtained, both were bonded with the ultraviolet curable resin layer side facing up. The disks were bonded together with the organic adhesive layer 24 on the inside to produce a disk.

The disk manufactured as described above was rotated and moved in the radial direction, and the numerical aperture ratio (Nu) was
Argon ion laser light (wavelength: 488 nm) focused by a lens with a merical aperture of 0.05.
) is irradiated on the entire surface, S n, , T e, oS e.

The recording films 21 and 21' were sufficiently crystallized. Recording was done as follows. The disk is rotated at 60 rpm, and the light from the semiconductor laser (wavelength 820 nm) is kept at a level that does not allow recording.The lens in the recording head focuses the light and irradiates it through the substrate onto one recording film, and one reflected light is detected. By doing this, the head was driven so that the center of the optical spot was always aligned between the tracking grooves. By doing this, the influence of noise generated from the groove can be avoided. While tracking in this manner, automatic focusing was performed so that the focus was on the recording film, and recording was performed by increasing the laser power according to the information signal or returning it to the original level. In addition, recordings were made by jumping to other grooves as necessary. As a result of the above recording, a change in reflectance occurred in the recording film, which was thought to be due to the change to an amorphous state. In this recording film, recording is performed by irradiating a recording light spot with reduced power or a laser beam whose length in the track direction is longer than the recording light spot and whose spread in the direction of adjacent tracks is the same as that of the recording light spot. You can also erase. The distance between the nearest adjacent pits representing addresses is 1/2 the length of the erasing light spot in the track direction.
If the length is set to twice or less, the address of the track or sector can be read even by the erasing light spot. The length of the pit representing the address is also preferably at least 1/2 the length of the erasing light spot in the track direction.

The same applies to other pits provided in a portion of the header.

Recording and erasing could be repeated 3×10'' times or more. When the Si3N4 layer formed on the recording film was omitted, a significant increase in noise occurred after several recording and erasing operations.

Reading was performed as follows. 600r disc
pm, and while performing tracking and automatic focusing in the same way as during recording, the strength of the reflected light was detected and the information was reproduced using a laser power that does not cause recording or erasure. An error rate of I x 10-' was obtained. Furthermore, in a 6-month life test at 60°C and 95% humidity, the error rate increased to 2X10-@.
There is no practical problem.

When the composition of the 5nxTevSe engineering recording film was changed, the number of laser beam irradiations required for erasing when recording, reproducing, and erasing was performed while rotating the disk at 600 rpm was as follows.

If Y is set to a constant value of 60 and Z is varied, Z=30 (X
/Z=0.33): ~10 times Z=15 (X/Z=4.
7): ~3 times Z=13 (X/Z='2.1): ~1
Even if the value of Y was changed, the relationship between the value of X/Z and the number of irradiations for erasing hardly changed. X/ as above
As the value of Z decreases, the number of erase irradiations increases rapidly, so the value of X/Z is preferably 2.1 or more.

It is particularly preferable to set the value of X/Z to 2.5 or more because erasing can be performed with one irradiation even if the recording power is 10% or more higher than the normal value.

When the composition of a 5nxT'e, Se, recording film was changed, the nylon rate after a 6-month life test at 60 DEG C. and 95% humidity was as follows.

X is the number percent of Sn atoms, Y is the number percent of Te atoms, and Z is the number percent of Se atoms.

When X/Z=3, Y=97: ~5X10-' Y=95: ~lXl0-' Y=65: ~2 X 10-' Y=55: ~2 X 10-' Where the value of Y is large The large error rate is due to natural crystallization due to the low crystallization temperature. Therefore, the value of Y is preferably 85 or less, more preferably 75 or less.

When Y is set to a constant value of 60 and Z is varied.

z=2 (X/Z=19): ~5xlO-'Z
=5 (X/Z=9): ~I X 10-'Z=
8 (X/Z=4): ~2 X 10-'z=1
0 (X/Z=3) The reason why the error rate is large when the value of 2xlO-'Z is small is due to natural crystallization due to the low crystallization temperature. Therefore, X/Z
The value of is preferably 9 or less, more preferably 4 or less.

When the composition of the SneTevSe recording film was changed, the erasure sensitivity when erasing was performed while rotating the disk at 600 rpm was as follows.

When X/Z=3, Y=15: ~20 mW or more Y==25: ~18 mW Y=35: ~15 mW Y=45: ~15 mW When the value of Y is small, the sensitivity decreases due to the light This is because absorption decreases, making it difficult to change from amorphous to crystalline. Therefore, the value of Y is preferably 25 or more, more preferably 35 or more.

The film thickness of the S n -T e -Se system recording film needs to be 3 nm or more in order to obtain stability and the contrast necessary for readout, and if it is not 300 nm or less, the sensitivity will decrease due to thermal conduction. In order to obtain a particularly high signal-to-noise ratio, a preferable range is 65 layers or more and 130 nm or less. S
The thickness of the protective layer due to i3N< is 1n to obtain the effect.
The film thickness must be at least 5 μm, and preferably at most 5 μm to prevent the occurrence of cracks.6 The thickness range that can withstand storage under harsh conditions is 10 layers or more and 200 nm or less. The organic layer outside the Si3N4 layer needs to have a thickness of 10 m or more in order to be effective.
Particularly preferred is a thickness of 0 μm or more. Furthermore, it needs to be 10 mm or less so that the lens can condense light.

A similar effect can be obtained by using an AflN layer instead of the Si or N4 layer. If the AQ, 03 layer is used instead of the Si, N, layer, the recording/erasing sensitivity will be lowered, but a high protection effect during recording/rewriting can be obtained. Also, Sin, layer, SnO□
Even if layers, gems, and layers are used, almost the same effect can be obtained.

The 5n-Te-8e recording film is produced by changing the aperture angle of each shutter during its vapor deposition, so as to form a film near the interface with the protective layer with a composition close to Si and N4 on the substrate side and on the side opposite to the substrate.
By forming a region in which the content of at least one of Sn and Se is increased on at least one side near the interface with the protective layer having a composition close to N4, oxidation resistance is increased and crystallization during storage is prevented. It could have been prevented.

Part or all of Sn is replaced with In, Pb.

At least a part of Ga can be added, and the amount that can be added is similar to that of Sn, but there are advantages and disadvantages depending on the element. In the case of I n e Ga + P b, there is a problem that it is easily oxidized. Note that In has the advantage that vacuum deposition is easier than Sn. In addition, among those added as the fourth element, S b * B
l + A s v Ga and Si help stabilize the amorphous state. In addition, a small amount of I, Ar, etc. may be included.

In place of at least one of the above Si3N4 protective layers.

Other oxide, fluoride, nitride, sulfide, etc. layers, such as AQN, AQ, O, and SiO, the main components of which are mentioned above.
2, SnO,, Gem, and other CeO2゜La20v,
sio, In20it Gem, pbo.

SnO, Te02t WO, l WO31CdS, Zn
5ICdSe, Zn5e, In, S,, In2Se,.

S 1)2 S31 S bz S e3+ G a2
831 G ass e3wMgF2t Ca F31
GaF, ,Gas,GeSe.

GeSe, SnS, 5nSe, PbS, Pb5e.

B 12s ezt B 1zs3. T a N,
A layer made of at least a portion of C may be used. However, when an opaque layer such as carbon is used on the light incident side, the film must be made thin.

Example 2 As a substrate, an acrylic resin plate with tracking grooves formed on the surface by injection molding was used, and a 20 nm thick film with a composition close to SiO□ was produced by electron beam evaporation, and resistance heating was performed. Sn.

Simultaneously evaporate Te, Se, and Y2O with an electron beam,
A recording film was deposited. The composition of the recording film is Sn, Te4
sSe1. YloOl has a film thickness of 1100n. This film is considered to be a mixed film of S n -T e -S e, y, and o3. Another substrate was prepared in the same manner, and an acrylic resin was applied to a thickness of about 0.5 μm on each deposited film with a composition close to S i O, and then the applied acrylic resin layer was placed on the inside. A disk was produced by bonding both substrates together using an organic adhesive.

The crystallization method, recording method, erasing method, and reading method are almost the same as in the first embodiment.

When the average composition of the recording film is Sn, TeYSe, Aα, the preferred ranges of X and Z are almost the same as in Example 1. However, the experiment was conducted with α being approximately 25. When α was 30 or less, almost no change was observed in the recording, reproducing, and erasing characteristics.

When α exceeds 30 and α is between 30 and 65, wrinkles and cracks likely occur due to increased internal stress in the film, and sensitivity decreases slightly, but the recording, reproducing and erasing characteristics remain at a usable level. It is.

When α exceeds 65 degrees, sensitivity decreases significantly.

It is possible to add at least a part of other elements such as In by replacing part or all of Sn, and it is also possible to use Si, N4 layer, G e O layer, etc. in place of the Sin layer. This is the same as in the first embodiment. Instead of Y2O3, other transparent materials may be deposited, such as those mentioned in Example 1 that can be used as a protective layer. Ni, Fe+
Transition metals such as Co and Tie CryPd can be added alone or as a fourth element.

The recording member obtained in this example also had a long life as in Example 1.

Example 3 As shown in FIG. 3, an 8102 layer 26 and a Sn2. A Te7°Se1° film was formed.

On top of this, a SiO□ film 28 was again formed in the form 8, but the upper Si film 28 had a thickness of about 20 nm, and a Bi layer 29 with a thickness of about 1100 nm was formed thereon. A Si02 layer 30 was further formed on this to a thickness of about 40 nm. Film formation up to this point is done by vacuum evaporation (resistance heating and electron beam)
It was done by Another substrate was prepared in the same manner, and polystyrene 31 and 31' were coated with a thickness of about 0.5 μm on the topmost SiO layers 30 and 31' of both substrates, respectively.
After coating and drying, both substrates were bonded with adhesive organic substance 32 with the coated polystyrene layer side facing inward to prepare a disk.

The crystallization method, recording method, erasing method, and reading method are almost the same as in the first embodiment.

In the intermediate layer, CeO, AQ, O, which was mentioned in Example 1 as being usable as a protective layer, is used in place of SiO2.

Other inorganic transparent substances such as CeO may be used, or an organic layer may be used. The organic layer has higher recording sensitivity but is inferior in the number of times it can be rewritten. Inorganic layer and organic layer 2
It may also be a layered film. Of course, the S of the 5n-Te-5e film
It is also possible to use a material in which n is replaced with at least a part of other elements such as In.

In this case, a large reproduced signal can be obtained when the thickness of the recording layer is in the range of 3 μm or more and 6 Sn or less.

The thickness of the Bi layer needs to be S nm or more in order to exhibit the effect of light reflection (absorption), and it needs to be 300 nm or less in order to reduce the decrease in sensitivity due to thermal conduction. The preferred thicknesses of the other layers are the same as those of the corresponding layers in Example 1.

The material of the reflective layer is Bi, Te, etc. instead of Bi.

Many semiconductors, semimetals, metals, and mixtures and compounds thereof, such as Te, Sn, sb, AQ, Au, Pb, and Ge+Si, can be used.

Example 4 Approximately 4 mm thick on an aluminum alloy disk with a diameter of approximately 35.5 am
A .mu.m polystyrene layer was formed by spin coating. Next, in the same manner as in Example 1, Si, N4-
5 n,, T e,. A S eIl-si, N4 laminated film was formed, and a fluorine-based plasma polymerized film was further formed thereon to a thickness of about 200 μm. This disc records
The reproduction/erasing light is made to enter from the side opposite to the aluminum alloy plate.

The preferred content range of each element is the same as in Example 1.

It is the same as in Example 1 that part or all of Sn may be replaced with at least a part of other elements such as In, and that CeO, etc. may be used instead of Si3N. . Further, a reflective layer as described in Example 3 may be formed between the Si3N layer on the substrate side and the Sn-Te-Se film. In this case, it is more preferable to provide an intermediate layer as described in Example 3 between the reflective layer and the recording layer.

The preferred thickness of each layer is the same as in Example 1.

〔Effect of the invention〕

As described above, according to the present invention, it is possible to obtain an information recording member that has a simple manufacturing process, good reproducibility, and is stable for a long period of time. The record can also be rewritten many times.

[Brief explanation of drawings]

FIG. 1 is a diagram showing the internal structure of a vacuum evaporation apparatus used for producing the recording member of the present invention, and FIGS. 2 and 3 are cross-sectional views showing the structure of the recording member in the embodiment of the present invention, respectively. . 1.2, 3.4...Boat, 6,7,8.9...Mask with fan-shaped slit, 10,11,12゜13.
... Shutter, 14... Board, 15, 16° 1.7
．． 18...Crystal oscillator type film thickness monitor, 19°19'
...Substrate, 20.20', 22.22'...Si
3N, layer, 21, 21'-8n,, T e,. S
e. Recording film, 23.23'...Ultraviolet curing resin layer, 24.
...Organic adhesive layer, 25.25'...Substrate, 26°2
6', 28.28', 30,30'...Si, N
4 layers, 27.27'...recording film, 29.29' Bi
Membrane, 31.31'... Polystyrene layer, 32... Adhesive χ 1 Port 2 Port 3 Figure

Claims (1)

[Scope of Claims] 1. An information recording thin film that is formed on a substrate directly or through a protective layer made of at least one of an inorganic substance and an organic substance and that undergoes atomic arrangement changes when irradiated with a recording beam. In the information recording member, the information recording thin film has an average composition in the film thickness direction of the general formula M_XTe_YSe_ZA_α (where X, Y, Z and α are 2.1≦X/Z≦9, 25≦, respectively) Y≦9
5, the value is in the range of 0≦α≦65, and M is Sn, In,
At least one element selected from the group consisting of Ga and Pb,
A is Sb, Bi, Be, Mg, Ca, Sr, Ba, Al
, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, E
u, Gd, Tb, Dy, Ho, Ti, Zr, Hf, V,
Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe
, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt,
Cu, Ag, Au, Zn, Cd, Tl, B, C, Si,
Represents at least one element selected from the group consisting of Ge, N, P, As, O, S, F, and H. ) A member for recording information represented by. 2. The information recording member according to claim 1, wherein the above α is 0. 3. In the information recording member according to claim 1 or 2, the content of at least one of the element represented by M and Se is near the surface of either one of the information recording thin films. A member for recording information, characterized in that the number of parts is larger than that on the inside thereof. 4. The information recording member according to claim 1, 2, or 3, further comprising a protective layer made of an inorganic material adjacent to at least one side of the information recording thin film, An information recording member comprising an organic layer adjacent to the surface of the protective layer that is not adjacent to the information recording thin film. 5. Claims 1, 2, 3, or 4
In the recording member described in paragraph 1, the information recording thin film has a light reflecting layer or a light absorbing layer on either side via an intermediate layer, and the thickness of the intermediate layer is 1 nm or more and 500 nm or less. An information recording member characterized by: 6. The information recording member according to claim 1, 2, or 3, wherein the information recording thin film has a thickness in the range of 3 nm to 300 nm. A recording member. 7. In the information recording member according to claim 1, 2 or 3, the information recording thin film has a thickness of 6.
An information recording member characterized by having a thickness in a range of 5 nm or more and 130 nm or less.