JPS61253822A - 化合物半導体薄膜の製造装置 - Google Patents
化合物半導体薄膜の製造装置Info
- Publication number
- JPS61253822A JPS61253822A JP9558785A JP9558785A JPS61253822A JP S61253822 A JPS61253822 A JP S61253822A JP 9558785 A JP9558785 A JP 9558785A JP 9558785 A JP9558785 A JP 9558785A JP S61253822 A JPS61253822 A JP S61253822A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- gas ejection
- plate
- compound semiconductor
- ejection plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 150000001875 compounds Chemical class 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000010409 thin film Substances 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000013078 crystal Substances 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 94
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 18
- 150000002902 organometallic compounds Chemical class 0.000 claims description 6
- 239000012159 carrier gas Substances 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 238000000197 pyrolysis Methods 0.000 claims 2
- 230000006698 induction Effects 0.000 abstract description 5
- 238000002156 mixing Methods 0.000 abstract description 4
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000001815 facial effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 206010067482 No adverse event Diseases 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- -1 hydrogen compound Chemical class 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9558785A JPS61253822A (ja) | 1985-05-07 | 1985-05-07 | 化合物半導体薄膜の製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9558785A JPS61253822A (ja) | 1985-05-07 | 1985-05-07 | 化合物半導体薄膜の製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61253822A true JPS61253822A (ja) | 1986-11-11 |
| JPH039609B2 JPH039609B2 (enrdf_load_stackoverflow) | 1991-02-08 |
Family
ID=14141712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9558785A Granted JPS61253822A (ja) | 1985-05-07 | 1985-05-07 | 化合物半導体薄膜の製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61253822A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5275686A (en) * | 1991-09-25 | 1994-01-04 | University Of New Mexico | Radial epitaxial reactor for multiple wafer growth |
| JP2022547508A (ja) * | 2019-09-09 | 2022-11-14 | アプライド マテリアルズ インコーポレイテッド | 処理システムおよび反応体ガスを供給する方法 |
| US11959169B2 (en) | 2019-01-30 | 2024-04-16 | Applied Materials, Inc. | Asymmetric injection for better wafer uniformity |
-
1985
- 1985-05-07 JP JP9558785A patent/JPS61253822A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5275686A (en) * | 1991-09-25 | 1994-01-04 | University Of New Mexico | Radial epitaxial reactor for multiple wafer growth |
| US11959169B2 (en) | 2019-01-30 | 2024-04-16 | Applied Materials, Inc. | Asymmetric injection for better wafer uniformity |
| JP2022547508A (ja) * | 2019-09-09 | 2022-11-14 | アプライド マテリアルズ インコーポレイテッド | 処理システムおよび反応体ガスを供給する方法 |
| US12139790B2 (en) | 2019-09-09 | 2024-11-12 | Applied Materials, Inc. | Processing system and method of delivering a reactant gas |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH039609B2 (enrdf_load_stackoverflow) | 1991-02-08 |
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