JPS61232691A - Manufacture of semiconductor laser device - Google Patents

Manufacture of semiconductor laser device

Info

Publication number
JPS61232691A
JPS61232691A JP7361785A JP7361785A JPS61232691A JP S61232691 A JPS61232691 A JP S61232691A JP 7361785 A JP7361785 A JP 7361785A JP 7361785 A JP7361785 A JP 7361785A JP S61232691 A JPS61232691 A JP S61232691A
Authority
JP
Japan
Prior art keywords
metal
semiconductor laser
heat sink
tin
bonded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7361785A
Other languages
Japanese (ja)
Other versions
JPH067628B2 (en
Inventor
Fumiko Susa
須佐　文子
Kunio Ito
国雄 伊藤
Masaru Wada
優 和田
Yuichi Shimizu
裕一 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7361785A priority Critical patent/JPH067628B2/en
Publication of JPS61232691A publication Critical patent/JPS61232691A/en
Publication of JPH067628B2 publication Critical patent/JPH067628B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To improve the reliability by bonding a molten metal on a heat sink and an alloy of an electrode metal of the bonding surface side of a semiconductor laser element on the surface of the element at the side to be bonded with the heat sink, and further strengthening the bonding by bonding a fusion bonding metal of the same type on the heat sink, thereby preventing it from removing. CONSTITUTION:A gold of an electrode metal and an alloy 4 of gold-tin are bonded on the side of a semiconductor laser element 1 at the side to be bonded with a heat sink 2 so that the tin of fusible metal 3 is readily draped. Then, after a fusible metal 5 made of tin is bonded, heat is applied to the element 1 so that the tin of the metal of the heat sink 2 side and the tin 5 of the fusible metal of the element 1 side are simultaneously fused and strongly bonded. Thus, they can be prevented from removing, and the reliability is provided by reducing the thermal resistance of a semiconductor laser device.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は、コンパクトディスクプレーヤやビデオディス
クプレーヤなどの半導体レーザ装置に関するものである
。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a semiconductor laser device for compact disc players, video disc players, and the like.

（従来の技術） 近年、半導体レーザ装置はコンバク１へディスクプレー
ヤやビデオディスクプレーヤなどの需要の増大とともに
ますます重要になり、高信頼性を要求されるようになっ
てきた。(Prior Art) In recent years, semiconductor laser devices have become increasingly important as demand for optical disc players, video disc players, and the like has increased, and high reliability has been required.

第３図は、従来の半導体レーザ装置の斜視図である。同
図において、１１は半導体レーザ素子であり、１２はピ
ー１ヘシンクであって半導体レーザ素子１１が接着され
ている。１３はビー１−シンク１２を接着するステ１１
てあり、１４はヒートシンク１２１−に付着した融着金
属である。FIG. 3 is a perspective view of a conventional semiconductor laser device. In the figure, 11 is a semiconductor laser element, and 12 is a sink to which the semiconductor laser element 11 is bonded. 13 is the step 11 for gluing the bee 1 and the sink 12.
14 is a welded metal attached to the heat sink 121-.

以」−のように構成された半導体レーザ装置の製造方法
を説明する。A method of manufacturing a semiconductor laser device configured as follows will be described.

ヒートシンク］　２−、にに付着した融着金属１４を熱
によって溶かし、その」二に半導体レーザ素−Ｊ’−］
　］のどちらか一方の電極を下にして接着していた。heat sink] 2-, melt the fused metal 14 attached to the heat sink, and then heat the semiconductor laser element -J'-]
] was glued with one of the electrodes facing down.

（発明が解決しようとする問題点） 」二部のような製造方法では、ヒートシンク１２」−の
融着金属１４と半導体レーザ素子１１の接着面とがなじ
みにくく、接着不１−分で、はずれることがあった。ま
たピー１ヘシンク１２」二の融着金属１４の厚さにばら
つきができ、融着金属１４が薄いと接着不十分になるこ
とがあり、作業中の歩留りの低下を招いたり、熱抵抗が
高くなるため、信頼性が低下する欠点があった。(Problems to be Solved by the Invention) In the manufacturing method described in Part 2, the fusion metal 14 of the heat sink 12 and the adhesive surface of the semiconductor laser element 11 are difficult to get acquainted with, and the metal 14 comes off after 1 minute of poor adhesion. Something happened. In addition, there may be variations in the thickness of the welding metal 14 between P1 and sink 12, and if the welding metal 14 is thin, the adhesion may be insufficient, leading to a decrease in yield during work, and high thermal resistance. Therefore, there was a drawback that reliability decreased.

本発明の目的は、従来の欠点を解消し、ヒートシンクと
半導体レーザ素子の接着を強くし、はずれによる歩留り
の低下を防ぎ、さらに熱抵抗を低くすることによって高
信頼をもたらす半導体レーザ装置の製造方法を提供する
ことである。The purpose of the present invention is to eliminate the conventional drawbacks, strengthen the adhesion between a heat sink and a semiconductor laser element, prevent a decrease in yield due to separation, and further reduce thermal resistance to provide a method for manufacturing a semiconductor laser device that achieves high reliability. The goal is to provide the following.

（問題点を解決するための手段） 本発明の半導体レーザ装置の製造方法は、ヒートシンク
の表面に融着金属を付着し、半導体レーザ素子の一方の
電極の−にに、この電極を形成している金属と、前記融
着金属との合金と、この合金の」二に、前記融着金属と
同種の融着金属を順次付着したのち、前記半導体レーザ
素子と、ヒートシンクとを接着するものである。(Means for Solving the Problems) The method for manufacturing a semiconductor laser device of the present invention includes adhering a fusion metal to the surface of a heat sink, and forming this electrode on one electrode of the semiconductor laser element. A fused metal of the same type as the fused metal is sequentially attached to a metal of the fused metal, an alloy of the fused metal, and a fused metal of the same type as the fused metal, and then the semiconductor laser element and the heat sink are bonded. .

（作　用） 本発明によれば、ヒートシンクと半導体レーザ素子の接
着が強くなり、はずれを防ぐとともに、半導体レーザ装
置の熱抵抗が低下することにより高信頼性をもたらすも
のである。(Function) According to the present invention, the adhesion between the heat sink and the semiconductor laser element is strengthened to prevent them from coming off, and the thermal resistance of the semiconductor laser device is reduced, thereby providing high reliability.

（実施例） ３一 本発明の一実施例を第１図および第２図に基ついて説明
する。(Example) 3. An example of the present invention will be described with reference to FIGS. 1 and 2.

第１図は本発明の半導体レーザ装置の断面図である。５
同図において、１は半導体レーザ素子、２はピー１〜シ
ンク、３ばヒートシンク２−にの融着金属、４は半導体
レーザ素子１の接着面側の電極金属とピー１〜シンク２
１ユの融着金属３との合金であり、５はピー１−シンク
２−にの融着金属３と同種の融着金属である。FIG. 1 is a sectional view of a semiconductor laser device of the present invention. 5
In the figure, 1 is a semiconductor laser element, 2 is a metal fused to the heat sink 2-, 2 is a metal fused to the heat sink 2-, and 4 is an electrode metal on the adhesive surface side of the semiconductor laser element 1 and a metal 1-sink 2.
1 U is an alloy with the welding metal 3, and 5 is the same type of welding metal as the welding metal 3 of the piece 1-sink 2-.

接着方法は、第２図に示すように、半導体レーザ素子１
のヒートシンク２と接着する面側に、電極金属である金
と、融着金属３である錫がなしみやすいように、まず金
−錫の合金４に付着する。The bonding method is as shown in FIG.
First, the gold-tin alloy 4 is attached to the surface of the electrode metal 3 to be adhered to the heat sink 2 so that gold as the electrode metal and tin as the fusion metal 3 are easily absorbed.

次に錫からなる融着金属５を４４着する、その後、半導
体レーザ素子１に熱を加えてヒートシンク２側の融着金
属３の錫と半導体レーザ素子］側の融着金属の錫５が同
時にとけあって強力に接着できる。Next, 44 pieces of welding metal 5 made of tin are attached, and then heat is applied to the semiconductor laser element 1, so that the tin of the welding metal 3 on the heat sink 2 side and the tin 5 of the welding metal on the semiconductor laser element side are simultaneously bonded. Melts together for strong adhesion.

（発明の効果） 本発明によれは、半導体レーザ素子のヒートシンクに接
着する側の面にヒートシンク−Ｌの融着金属と半導体レ
ーザ素子の接着面側の電極金属との合金を付着し、さら
にヒートシンク上と同種の融着金属を付着することによ
り、接着を強くし、はずれを防ぎ、また熱抵抗を下げて
高信頼性の半導体レーザ装置を製作することができ、そ
の実用的効果は大なるものがある。(Effects of the Invention) According to the present invention, an alloy of the fusion metal of the heat sink-L and the electrode metal on the adhesive side of the semiconductor laser element is attached to the surface of the semiconductor laser element on the side to be adhered to the heat sink, and By attaching the same type of fusion metal as above, it is possible to strengthen the bond, prevent it from coming off, and lower the thermal resistance, making it possible to manufacture a highly reliable semiconductor laser device, which has great practical effects. There is.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例による半導体レーザ装置の断
面図、第２図は同半導体レーザ装置の製造方法説明図、
第３図は従来の半導体レーザ装置の斜視図である。 １．１１　・　半導体レーザ素子、　２，１２・・・　
ヒートシンク、　３，５．１４・・・融着金属、　４・
・合金、１３・・システム。 特許出願人　松下電器産業株式会社 第１図 ２　ヒートシンク ３　お１＃次 ４　な論 ５　鉢廂殆おFIG. 1 is a cross-sectional view of a semiconductor laser device according to an embodiment of the present invention, FIG. 2 is an explanatory diagram of a method for manufacturing the semiconductor laser device,
FIG. 3 is a perspective view of a conventional semiconductor laser device. 1.11 ・Semiconductor laser element, 2,12...
Heat sink, 3,5.14...Fusion metal, 4.
・Alloy, 13... system. Patent applicant Matsushita Electric Industrial Co., Ltd. Figure 1 2 Heat sink 3

Claims (1)

【特許請求の範囲】[Claims] ヒートシンクの表面に融着金属を付着し、半導体レーザ
素子の一方の電極の上に、該電極を形成している金属と
前記融着金属との合金と、該合金の上に前記融着金属と
同種の融着金属とを順次付着したのち、前記半導体レー
ザ素子とヒートシンクとを接着することを特徴とする半
導体レーザ装置の製造方法。A fused metal is attached to the surface of the heat sink, an alloy of the metal forming the electrode and the fused metal is placed on one electrode of the semiconductor laser element, and an alloy of the fused metal is placed on the alloy. 1. A method of manufacturing a semiconductor laser device, comprising sequentially attaching fused metals of the same type, and then bonding the semiconductor laser element and a heat sink.
JP7361785A 1985-04-09 1985-04-09 Method for manufacturing semiconductor laser device Expired - Lifetime JPH067628B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7361785A JPH067628B2 (en) 1985-04-09 1985-04-09 Method for manufacturing semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7361785A JPH067628B2 (en) 1985-04-09 1985-04-09 Method for manufacturing semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS61232691A true JPS61232691A (en) 1986-10-16
JPH067628B2 JPH067628B2 (en) 1994-01-26

Family

ID=13523470

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7361785A Expired - Lifetime JPH067628B2 (en) 1985-04-09 1985-04-09 Method for manufacturing semiconductor laser device

Country Status (1)

Country Link
JP (1) JPH067628B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100658939B1 (en) 2005-05-24 2006-12-15 엘지전자 주식회사 Package for light emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100658939B1 (en) 2005-05-24 2006-12-15 엘지전자 주식회사 Package for light emitting device

Also Published As

Publication number Publication date
JPH067628B2 (en) 1994-01-26

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