JPH0234945A - Brazing method - Google Patents
Brazing methodInfo
- Publication number
- JPH0234945A JPH0234945A JP63184845A JP18484588A JPH0234945A JP H0234945 A JPH0234945 A JP H0234945A JP 63184845 A JP63184845 A JP 63184845A JP 18484588 A JP18484588 A JP 18484588A JP H0234945 A JPH0234945 A JP H0234945A
- Authority
- JP
- Japan
- Prior art keywords
- brazing
- silver
- brazing material
- stem
- silver solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005219 brazing Methods 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052802 copper Inorganic materials 0.000 claims abstract description 23
- 239000010949 copper Substances 0.000 claims abstract description 23
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 229910000679 solder Inorganic materials 0.000 claims description 30
- 239000008188 pellet Substances 0.000 abstract description 21
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052709 silver Inorganic materials 0.000 abstract description 13
- 239000004332 silver Substances 0.000 abstract description 13
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 12
- 239000011733 molybdenum Substances 0.000 abstract description 12
- 239000000463 material Substances 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000005496 eutectics Effects 0.000 abstract description 5
- 230000007935 neutral effect Effects 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 239000007858 starting material Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
の１
この発明はロウ付け方法に関し、特に例えばパワートラ
ンジスタ用ステムにおけるステム基板上への銅製ペレッ
トおよびモリブデン製ディスクの銀ロウ付けに好適する
ものである。DETAILED DESCRIPTION OF THE INVENTION (1) The present invention relates to a brazing method, and is particularly suitable for silver brazing of copper pellets and molybdenum disks onto a stem substrate in a power transistor stem, for example.
従】錫月支術−
パワートランジスタ用ステムでは、半導体ペレットの放
熱性を良くするため、ステム基板に銅製ペレットをロウ
付けするとともに、銅製ペレットと半導体ペレｙ）との
熱膨張係数の違いに起因する半導体ペレットの破損を防
止するため、銅製ペレットの上にモリブデン製ディスク
をロウ付けしたものがある。In order to improve the heat dissipation of the semiconductor pellet in the power transistor stem, a copper pellet is brazed to the stem substrate, and due to the difference in thermal expansion coefficient between the copper pellet and the semiconductor pellet. In order to prevent damage to semiconductor pellets, some copper pellets have molybdenum discs brazed onto them.
第２図はこの種のステムの平面図を示し、第３図は第２
図のＩＩＩ−ＩＩＩ線に沿う断面図を示す。図において
、１は鉄製のステム基板で、菱形状を呈し、長軸方向の
両端近傍にシャーシ等への取付孔２．２を有し、中央部
近傍に２個のリード線封着孔３，３を有し、中央部には
凹部４を何する。FIG. 2 shows a top view of this type of stem, and FIG.
A sectional view taken along line III-III in the figure is shown. In the figure, reference numeral 1 denotes an iron stem board, which has a diamond shape and has mounting holes 2.2 for attaching to the chassis etc. near both ends in the longitudinal direction, and two lead wire sealing holes 3 near the center. 3, and a recess 4 in the center.
５．５は前記リート線封着孔３，３に挿通されて、ガラ
ス６．６を介して気密に封着された鉄・ニッケル合金製
のリード線である。７は前記凹部４に銀ロウ８で固着さ
れた銅製ペレット、９は銅製ペレット７上に銀ロウｌＯ
で固着されたモリブデン製ディスクである。Reference numeral 5.5 denotes a lead wire made of an iron-nickel alloy that is inserted into the lead wire sealing holes 3, 3 and hermetically sealed via glass 6.6. 7 is a copper pellet fixed in the recess 4 with silver solder 8; 9 is a silver solder lO fixed on the copper pellet 7;
It is a molybdenum disk fixed with.
この種のステムは、従来次のようにして製造されていた
。まず、第４図に示すように、ステム基板１のリード線
封着孔３，３にリード線５，５を挿通し、ガラス６．６
で封着したステム１！を用意する。次に、ステム基板１
の凹部４内に銀ロウ８の薄片を収納し、その上に銅製ペ
レット７を収容し、銅製ペレット７の上に銀ロウｌＯの
薄片を介して、モリブデン製ディスク９を載置し、全体
を加熱して、銀ロウの薄片を溶融させて、ステム基板１
と銅製ペレット７とモリブデン製ディスク９を同時にロ
ウ付けする。This type of stem has conventionally been manufactured as follows. First, as shown in FIG. 4, the lead wires 5, 5 are inserted into the lead wire sealing holes 3, 3 of the stem board 1, and
Stem 1 sealed with! Prepare. Next, stem board 1
A thin piece of silver solder 8 is housed in the recess 4, a copper pellet 7 is placed thereon, a molybdenum disk 9 is placed on top of the copper pellet 7 via a thin piece of silver solder lO, and the whole is heated. The stem substrate 1 is heated to melt the thin piece of silver solder.
The copper pellet 7 and the molybdenum disk 9 are simultaneously brazed.
よ゛
ところで、上記の製造方法によれば、銀ロウ８とＩＯが
同時に溶融するため、溶融した銀ロウ８とｌＯが合流し
て、モリブデン製ディクク９の上面にまで流れて、後の
半導体ペレットの固着時に半田付け性が悪くなったり、
半導体ペレットが傾斜して、ワイヤボンディング作業を
困難にするという問題点があった。By the way, according to the above manufacturing method, since the silver solder 8 and IO are melted at the same time, the molten silver solder 8 and IO join together and flow to the upper surface of the molybdenum disc 9, forming a semiconductor pellet later. Solderability may deteriorate when the
There is a problem in that the semiconductor pellet is tilted, making wire bonding work difficult.
の
そこで、この発明は、上記の問題点を解決し得るロウ付
け方法を提供するもので、銅製の第一部材と、第二部材
とを第一の銀ロウを用いてロウ付けする工程と、上記の
接合構体の第一部材側を、前記ロウ付けに用いた銀ロウ
と同一組成の第二の銀ロウを用いてロウ付けする工程と
を含むことを特徴とする。Therefore, the present invention provides a brazing method that can solve the above problems, and includes the steps of brazing a first member made of copper and a second member using a first silver solder; The method is characterized by including the step of brazing the first member side of the above-mentioned joined structure using a second silver solder having the same composition as the silver solder used for the above-mentioned brazing.
１皿
第一部材と第二部材のロウ付け時に、溶融した第一の銀
ロウ中に第一部材を構成する銅がくわれて、銀ロウの組
成が出発材料である銀ロウよりも銅含有量が大きいもの
となり、融点が上昇する。When brazing the first member and the second member, the copper constituting the first member is mixed into the molten first silver solder, and the composition of the silver solder has a higher copper content than the starting material, the silver solder. becomes large and the melting point rises.
このため、第一部材と第三部材とのロウ付け時に、第一
部材と第二部材のロウ付けに用いた銀ロウと同一組成の
銀ロウを用いても、融点が上昇している第一の銀ロウは
もはや溶融しない。For this reason, even if a silver solder having the same composition as the silver solder used to braze the first and second members is used when brazing the first member and the third member, the melting point of the first member has increased. The silver wax no longer melts.
災ｉ阻
以下、この発明の製造方法を、トランジスタ用ステムに
適用した場合の一実施例について、図面を参照して説明
する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the manufacturing method of the present invention is applied to a transistor stem will be described below with reference to the drawings.
第１図はロウ付け前の分解断面図を示し、第２図〜第４
図と同一部分または対応部分には同一参照符号を付して
いるので、その説明を省略する。Figure 1 shows an exploded sectional view before brazing, and Figures 2 to 4
The same reference numerals are given to the same parts or corresponding parts as those in the figures, so the explanation thereof will be omitted.
ます、ステム基板１のリード線封着孔３，３にリード線
５，５を挿通し、ガラス６．６で封着したステム１１を
用意する。一方、第一部材の一例としての銅製ペレット
７と、第二部材としてのモリブデン製ディスク９とを、
共晶（銀７２重量パーセント、銅２８重量パーセント）
よりなる第一の銀ロウｌＯを介して重ね合わせ、中性ま
たは弱還元性雰囲気中において８００〜８３０℃で加熱
して、鋼製ペレット７とモリブデン製ディスク９の接合
構体１２を製作する。このとき、銀ロウｌＯは、出発材
料としては銀７２重量パーセント、銅２８重量パーセン
トの共晶ロウ材を用いるが、前記接合構体１２の製作時
に、溶融した銀ロウｌθ中に銅製ペレット７の銅が食わ
れて、接合構体１２における銀ロウｌＯの組成は、銅成
分が増大しており、その融点は上昇している。First, the stem 11 is prepared by inserting the lead wires 5, 5 into the lead wire sealing holes 3, 3 of the stem substrate 1 and sealing them with glass 6.6. On the other hand, copper pellets 7 as an example of the first member and molybdenum disks 9 as the second member,
Eutectic (72 weight percent silver, 28 weight percent copper)
The bonded structure 12 of the steel pellets 7 and the molybdenum disks 9 is produced by stacking them together via a first silver solder lO consisting of 1O and heating them at 800 to 830° C. in a neutral or weakly reducing atmosphere. At this time, a eutectic brazing material containing 72 weight percent silver and 28 weight percent copper is used as the starting material for the silver solder lO, but when the joining structure 12 is manufactured, the copper pellets 7 are added to the molten silver solder lθ. As a result, the composition of the silver solder lO in the joining structure 12 has an increased copper component, and its melting point has increased.
次に、ステム基板１の凹部４内に、共晶よりなる第二の
銀ロウ８を供給し、その上に前記接合構体Ｉ２を収容し
、中性または弱還元性雰囲気中において８００〜８３０
℃程度に加熱して、銀ロウ８を溶融させて、接合構体１
２をステム基板１にロウ付けする。このとき、前述のと
おり、銀ロウｌＯの融点が上昇しているので、銀ロウｌ
Ｏは溶融しない。したがって、銀ロウ８と！０の合流は
生じず、銀ロウがモリブデン製ディスク９の上面に流れ
上ることがなくなる。また、モリブデン製ディスク９が
銅製ペレット７に対して、位置ずれを生じることもない
。Next, a second silver solder 8 made of eutectic is supplied into the recess 4 of the stem substrate 1, and the bonded structure I2 is housed thereon, and the solder is heated to 800 to 830
℃ to melt the silver solder 8 and form the bonded structure 1.
2 to the stem substrate 1. At this time, as mentioned above, the melting point of silver wax lO has increased, so
O does not melt. Therefore, silver wax 8! 0 merging does not occur, and the silver solder does not flow up onto the upper surface of the molybdenum disk 9. Furthermore, the molybdenum disk 9 will not be misaligned with respect to the copper pellet 7.
なお、上記実施例は特定構造のトランジスタ用ステムに
ついて説明したが、少なくとも銅製の部材を用いる他の
構造の半導体装置用ステムや、その他任意のロウ付け構
体の製造に適用できる。Although the above embodiments have been described with respect to a stem for a transistor having a specific structure, the present invention can be applied to the manufacture of a stem for a semiconductor device having another structure using at least a member made of copper, or any other brazing structure.
発」Ｆと徒未−
以上のように、この発明によれば、第一部材と第二部材
のロウ付けに用いた銀ロウの組成が、出発材料に比較し
て銅の含仔量が増大して融点が上昇する結果、第一部材
と第二部材の接合構体と第三部材とをロウ付けする際に
、前記接合構体の銀ロウが溶融しないので、第二部の他
面に銀ロウか付着することがなくなる。As described above, according to the present invention, the composition of the silver solder used for brazing the first member and the second member has an increased content of copper compared to the starting material. As a result, when the joint structure of the first and second members and the third member are brazed, the silver solder of the joint structure does not melt, so that the silver solder is not melted on the other surface of the second part. or it will not stick.
第１図はこの発明をトランジスタ用ステムの製造に適用
した場合のロウ付け前の分解断面図である。
第２図はトランジスタ用ステムの一例の平面図で、第３
図は第２図のＩＩＩ−ＩＩＩに沿う断面図である。第４
図は、第２図のステムの従来の製造方法について説明す
るためのロウ付け前の分解断面図である。
１・・・・・・第一部材（ステム基板）、７・・・・・
・第一部材（銅製ペレット）、８・・・・・・第一の銀
ロウ、
９・・・・・・第二部材（モリブデン製ディスク）、■
０・・・・・・第二の銀ロウ。FIG. 1 is an exploded sectional view before brazing when the present invention is applied to manufacturing a stem for a transistor. Figure 2 is a plan view of an example of a stem for a transistor;
The figure is a sectional view taken along line III-III in FIG. 2. Fourth
The figure is an exploded cross-sectional view before brazing to explain the conventional manufacturing method of the stem of FIG. 2. 1...First member (stem board), 7...
・First member (copper pellet), 8...First silver solder, 9...Second member (molybdenum disc),■
0...Second silver wax.
Claims (1)
いてロウ付けする工程と、 上記の接合構体の第一部材側を、第三部材に前記ロウ付
けに用いた第一の銀ロウと同一組成の第二の銀ロウを用
いてロウ付けする工程 とを含むロウ付け方法。[Claims] 1. A step of brazing a first member made of copper and a second member using a first silver solder; A brazing method comprising the step of brazing using a second silver solder having the same composition as the first silver solder used for brazing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63184845A JPH0234945A (en) | 1988-07-25 | 1988-07-25 | Brazing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63184845A JPH0234945A (en) | 1988-07-25 | 1988-07-25 | Brazing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0234945A true JPH0234945A (en) | 1990-02-05 |
Family
ID=16160321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63184845A Pending JPH0234945A (en) | 1988-07-25 | 1988-07-25 | Brazing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0234945A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008164233A (en) * | 2006-12-28 | 2008-07-17 | Toho Gas Co Ltd | Bath device |
| JP2020113695A (en) * | 2019-01-16 | 2020-07-27 | 新光電気工業株式会社 | Stem for semiconductor package and semiconductor package |
-
1988
- 1988-07-25 JP JP63184845A patent/JPH0234945A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008164233A (en) * | 2006-12-28 | 2008-07-17 | Toho Gas Co Ltd | Bath device |
| JP2020113695A (en) * | 2019-01-16 | 2020-07-27 | 新光電気工業株式会社 | Stem for semiconductor package and semiconductor package |
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