JPS61231754A - 混成集積化一次元光センサ - Google Patents

混成集積化一次元光センサ

Info

Publication number
JPS61231754A
JPS61231754A JP60072577A JP7257785A JPS61231754A JP S61231754 A JPS61231754 A JP S61231754A JP 60072577 A JP60072577 A JP 60072577A JP 7257785 A JP7257785 A JP 7257785A JP S61231754 A JPS61231754 A JP S61231754A
Authority
JP
Japan
Prior art keywords
optical sensor
electrode layer
hybrid integrated
dimensional optical
transparent substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60072577A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0528508B2 (enExample
Inventor
Yuji Kajiwara
梶原　勇次
Yasuki Kudo
工藤　泰樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60072577A priority Critical patent/JPS61231754A/ja
Publication of JPS61231754A publication Critical patent/JPS61231754A/ja
Publication of JPH0528508B2 publication Critical patent/JPH0528508B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Facsimile Heads (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP60072577A 1985-04-08 1985-04-08 混成集積化一次元光センサ Granted JPS61231754A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60072577A JPS61231754A (ja) 1985-04-08 1985-04-08 混成集積化一次元光センサ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60072577A JPS61231754A (ja) 1985-04-08 1985-04-08 混成集積化一次元光センサ

Publications (2)

Publication Number Publication Date
JPS61231754A true JPS61231754A (ja) 1986-10-16
JPH0528508B2 JPH0528508B2 (enExample) 1993-04-26

Family

ID=13493372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60072577A Granted JPS61231754A (ja) 1985-04-08 1985-04-08 混成集積化一次元光センサ

Country Status (1)

Country Link
JP (1) JPS61231754A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01179356A (ja) * 1987-12-31 1989-07-17 Nec Corp 混成集積化光電変換素子アレイ
US6831291B2 (en) * 2001-04-16 2004-12-14 Fuji Photo Film Co., Ltd. Process for producing alternate striped electrode array in which transparent electrodes alternate with opaque electrodes, based on single mask designed for the opaque electrodes in self-aligned manner

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961079A (ja) * 1982-09-29 1984-04-07 Nec Corp 薄膜形光電変換素子とその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961079A (ja) * 1982-09-29 1984-04-07 Nec Corp 薄膜形光電変換素子とその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01179356A (ja) * 1987-12-31 1989-07-17 Nec Corp 混成集積化光電変換素子アレイ
US6831291B2 (en) * 2001-04-16 2004-12-14 Fuji Photo Film Co., Ltd. Process for producing alternate striped electrode array in which transparent electrodes alternate with opaque electrodes, based on single mask designed for the opaque electrodes in self-aligned manner

Also Published As

Publication number Publication date
JPH0528508B2 (enExample) 1993-04-26

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