JPS61231744A - Semiconductor cooling device - Google Patents
Semiconductor cooling deviceInfo
- Publication number
- JPS61231744A JPS61231744A JP7381685A JP7381685A JPS61231744A JP S61231744 A JPS61231744 A JP S61231744A JP 7381685 A JP7381685 A JP 7381685A JP 7381685 A JP7381685 A JP 7381685A JP S61231744 A JPS61231744 A JP S61231744A
- Authority
- JP
- Japan
- Prior art keywords
- fin
- base portion
- cap
- contact surface
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4338—Pistons, e.g. spring-loaded members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体冷却装置に係り、特に熱的ブリッジ素
子を用いた半導体冷却装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor cooling device, and more particularly to a semiconductor cooling device using a thermal bridge element.
従来、熱的ブリッジ素子を用いた半導体冷却装置け、回
路基板上に搭載された複数の半導体チップと回路基板を
被覆するキャップとの間に形成された空間部に各半導体
チップと対向して複数の熱的ブリッジ素子が配置されて
いる。この熱的ブリッジ素子は、可撓性のフィンがスペ
ーサを介して積層固定されたもので、板ばねによって一
方の面が半導体チップに、他方の面がキャップにそれぞ
れ適切な圧力で接触しておシ、フィンは可撓性をもつた
めに、半導体チップのわずかな傾きにも追従して傾き、
これによって常に良好な面接触状態が得られるようにな
っている。Conventionally, in a semiconductor cooling device using a thermal bridge element, a plurality of semiconductor chips are placed facing each semiconductor chip in a space formed between a plurality of semiconductor chips mounted on a circuit board and a cap covering the circuit board. A thermal bridge element is arranged. This thermal bridge element consists of flexible fins stacked and fixed via spacers, and one side is in contact with the semiconductor chip and the other side is in contact with the cap with appropriate pressure by a leaf spring. Because the fins are flexible, they can tilt to follow even the slightest tilt of the semiconductor chip.
This ensures that good surface contact is always achieved.
そして半導体チップの発熱は、接触面を介して熱的ブリ
ッジ素子に伝えられ、さらに接触面を介してキャップに
伝えられ、最終的に水冷ジャケットにより除去されるも
のである（詳細は、特開昭５８−２３４６３号公報に開
示されている）。The heat generated by the semiconductor chip is then transferred to the thermal bridge element via the contact surface, further transferred to the cap via the contact surface, and finally removed by the water cooling jacket. 58-23463).
上記従来の半導体冷却装置において、熱的ブリッジ素子
の伝熱効率を向上させるためには、接触面の接触面積お
よびフィンの枚数を可能な限り大きくとり、伝熱面積を
拡大することが望ましい。In the conventional semiconductor cooling device described above, in order to improve the heat transfer efficiency of the thermal bridge element, it is desirable to increase the contact area of the contact surface and the number of fins as much as possible to expand the heat transfer area.
しかし、この場合、半導体チップの熱的ブリッジ素子と
の接触面の面積は、熱的ブリッジ素子のキャップとの接
触面の面積より小さく設定されているので、半導体チッ
プから熱的ブリッジ素子に伝えられた熱が、フィンとス
ペーサとの積層部を横方向に拡がらなければ、上述の伝
熱面積拡大の効果は期待できない。However, in this case, the area of the contact surface of the semiconductor chip with the thermal bridge element is set smaller than the area of the contact surface of the thermal bridge element with the cap, so that no information is transmitted from the semiconductor chip to the thermal bridge element. Unless the generated heat spreads laterally through the laminated portion of the fins and spacers, the above-mentioned effect of increasing the heat transfer area cannot be expected.
しかるに、従来の熱的ブリッジ素子の場合、積層部には
、フィンとスペーサとの接触面が多数存在し、その接触
面の接触熱抵抗が、熱の横方向への拡がりを押えてしま
うことになυ、伝熱面積拡大効果によシ熱的ブリッジ素
子の伝熱効率を高めることが困難であった。However, in the case of conventional thermal bridge elements, there are many contact surfaces between the fins and spacers in the laminated part, and the contact thermal resistance of the contact surfaces suppresses the spread of heat in the lateral direction. However, it was difficult to increase the heat transfer efficiency of the thermal bridge element due to the effect of expanding the heat transfer area.
また従来の熱的ブリッジ素子は、その構造が複雑で部品
点数が多い。従って、数千〜数万個の熱的ブリッジ素子
を必要とするような超大型コンピュータに適用するには
、量産性に問題がある。また従来の熱的ブリッジ素子は
、半導体チップの傾きに追従するために、可撓性のフィ
ンを用いており、傾いた半導４Ｌチツプに対しては、隣
接するフィン同士が互いに接触するので、熱的ブリッジ
素子の熱抵抗は小さくなるが、傾かない半導体チップに
対しては、隣接するフィン同士が互いに接触しないので
、熱的ブリッジ素子の熱抵抗は大きくなる。このように
、半導体チップの傾きに対する追従性を可鋳性のフィン
により得ようとするために、熱的ブリッジ素子の熱抵抗
のばらつきが大きくなるという問題がある。Further, the conventional thermal bridge element has a complicated structure and a large number of parts. Therefore, there is a problem in mass production when applying it to ultra-large computers that require several thousand to tens of thousands of thermal bridge elements. Furthermore, conventional thermal bridge elements use flexible fins to follow the tilt of the semiconductor chip, and for tilted semiconductor 4L chips, adjacent fins come into contact with each other. Although the thermal resistance of the thermal bridge element becomes small, for a semiconductor chip that is not tilted, the thermal resistance of the thermal bridge element increases because adjacent fins do not contact each other. In this way, since the ability to follow the inclination of the semiconductor chip is attempted to be obtained by using castable fins, there is a problem in that the variation in thermal resistance of the thermal bridge element increases.
本発明は、このような問題点を解決し、熱的ブリッジ素
子の横方向への熱の拡がり熱抵抗を小さくシ、かつ熱的
ブリッジ素子の構成部品点数を少なくした半導体冷却装
置を提供することを目的とするものである。The present invention solves these problems and provides a semiconductor cooling device in which the thermal resistance of the thermal bridge element in the lateral direction is reduced, and the number of component parts of the thermal bridge element is reduced. The purpose is to
かかる目的達成のため、本発明（第１発明）ば、回路基
板上に搭載された１個又は複数の半導体チップと、前記
回路基板を被覆するキャンプと、該キャップと前記回路
基板とにより形成され熱伝導性の気体が封入された空間
部に前記半導体チップと対向して配置された熱的ブリッ
ジ素子とを設けた半導体冷却装置において、前記熱的ブ
リツ′）素子が、前記キャップと接触する接触面をもつ
ベース部と該ベース部と一体的に形成された櫛歯状のフ
ィン部とからなる第１のフィンと、該第１のフィンのフ
ィン部と微小な間隙をもって嵌合される櫛歯状のフィン
部と核フィン部と一体的に形成され前記半導体チップと
接触する接触面をもつベース部とからなる第２のフィン
と、前記第１および第２のフィンのベース部に作用点を
もち該ベース部の接触面をそれぞれ前記キャップおよび
半導体チップに押圧するように付勢した少なくとも１個
の弾性部材とを設けたものである。また本発明（第２発
明）は、回路基板上に搭載された１例文Ｖｉ複数の半導
体チップと、前記回路基板を被覆するキャップと、該キ
ャップと前記回路基板とにより形成され熱伝導性の気体
が封入された空間部に前記半導体チップと対向して配置
された熱的ブリッジ素子とを設けた半導体冷却装置にお
いて、前記熱的ブリッジ素子が、前記キャップと接触す
る接触面をもつベース部と該ベース部と一体的に形成さ
れた櫛歯状のフィン部とからなる第１のフィンと、該第
１のフィンのフィン部と微小な間隙をもって嵌合される
櫛歯状のフィン部と該フィン部と一体的に形成され前記
半導体チップと接触する接触面をもつベース部とからな
る第２のフィンと、前記第１および第２のフィンのベー
ス部に作用点をもち該ベース部の接触面をそれぞれ前記
キャップおよび半導体チップに押圧するように付勢した
少なくとも１個の弾性部材とを設け、かつ前記第１のフ
ィンのベース部の接触面が、前記回路基板上に配列され
た半導体チップの配列ピッチとほぼ等しい幅および奥行
きをもって設定されたものである。In order to achieve this object, the present invention (first invention) provides a cap that is formed by one or more semiconductor chips mounted on a circuit board, a camp that covers the circuit board, and the cap and the circuit board. In a semiconductor cooling device including a thermal bridging element disposed facing the semiconductor chip in a space filled with a thermally conductive gas, the thermal bridging element contacts the cap. a first fin consisting of a base portion having a surface and a comb-like fin portion formed integrally with the base portion; and a comb tooth that is fitted with the fin portion of the first fin with a minute gap. a second fin consisting of a shaped fin portion and a base portion integrally formed with the core fin portion and having a contact surface in contact with the semiconductor chip; and a point of action is provided on the base portions of the first and second fins. and at least one elastic member biased to press contact surfaces of the base portion against the cap and the semiconductor chip, respectively. The present invention (second invention) also provides a plurality of semiconductor chips mounted on a circuit board, a cap covering the circuit board, and a thermally conductive gas formed by the cap and the circuit board. In the semiconductor cooling device, the thermal bridge element is provided with a thermal bridge element disposed facing the semiconductor chip in a space sealed with the semiconductor chip, and the thermal bridge element has a base portion having a contact surface that contacts the cap, and a base portion that has a contact surface that contacts the cap. A first fin consisting of a comb-shaped fin part formed integrally with a base part, a comb-shaped fin part fitted with the fin part of the first fin with a minute gap, and the fin. a second fin consisting of a base portion integrally formed with the base portion and having a contact surface that contacts the semiconductor chip; and a contact surface of the base portion having a point of action on the base portions of the first and second fins; at least one elastic member biased to press against the cap and the semiconductor chip, respectively; The width and depth are set to be approximately equal to the arrangement pitch.
上述の構成によれば、熱的ブリッジ素子は、ベース部と
７４７部とが一体的に形成されており、ベース部におけ
る横方向への熱の拡がり熱抵抗が小さくなる。またフィ
ン部同士が微小な間隙をもって嵌合されており、半導体
チップのわずかな傾きに追従して第２のフィンが第１の
フィンに拘束されることなぐ傾く。また第１のフィンの
キャップ上における位置決めが自動的になされる。According to the above-described configuration, the base portion and the 747 portion of the thermal bridge element are integrally formed, and the thermal resistance of the spread of heat in the lateral direction in the base portion is reduced. Further, the fin portions are fitted with a small gap, and the second fins are tilted without being restrained by the first fins, following the slight tilt of the semiconductor chip. Also, the first fin is automatically positioned on the cap.
以下、本発明を図面に示す実施例に基いて説明する。 The present invention will be explained below based on embodiments shown in the drawings.
第１図および第２図は、本発明の第１実施例に係り、半
導体冷却装置１け、回路基板２上に搭載された複数の半
導体チップ３と、回路基板２を被覆するキャップ４と、
該キャップ４と回路基板２との間に形成され熱伝導性の
気体が封入された空間部５に半導体チップ３と対向して
配置された熱的ブリッジ素子６と、キャップ４の上面に
取付けられた水冷ジャケット８とからなっている。1 and 2 show a first embodiment of the present invention, which includes a semiconductor cooling device, a plurality of semiconductor chips 3 mounted on a circuit board 2, a cap 4 covering the circuit board 2,
A thermal bridge element 6 is disposed facing the semiconductor chip 3 in a space 5 formed between the cap 4 and the circuit board 2 and filled with a thermally conductive gas, and a thermal bridge element 6 is attached to the upper surface of the cap 4. It consists of a water cooling jacket 8.
熱的ブリッジ素子６は、第１のフィン１０および第２の
フィン１１を備えており、これらのフィン１０．１１は
、ベース部１２．１３と、これらのベース部１２．１３
にそれぞれ一体的に形成された櫛歯状の複数の７４７部
１５．１６とからな〆）プ ｌｘ Ｌ ｒ
詰 ｔｒｙｓ −フ ス ・ノ 立π １ ζ
１ に １．−） ズド 丁７に嵌合
されており、各フィン部１５．１６の嵌合部分は、精密
に制御された微小間隙をもって嵌合されている。The thermal bridging element 6 comprises a first fin 10 and a second fin 11, which fins 10.11 have a base part 12.13 and a base part 12.13.
A plurality of comb-teeth-shaped 747 parts 15.16 each integrally formed with) lx L r
Tsume trys -fus ・ノ standingπ 1 ζ
1 to 1. -) The fitting portions of each fin portion 15 and 16 are fitted with precisely controlled minute gaps.
第１および第２のフィン１０．１１の中間部に形成され
た凹部１９．２０にけ、ベース部１２゜１３に作用点を
もつ弾性部材の一例たる圧縮ばね２２が収容されており
、この圧縮ばね２２によって、第１のフィン１０のベー
ス部１２の接触面１２ａＶｉキヤツプ４に、第２のフィ
ン１１のベース部１３の接触面１３ａは半導体チップ３
にそれぞれ適正な接触圧力で当接するように付勢されて
いる。A compression spring 22, which is an example of an elastic member having a point of action on the base portion 12. The spring 22 causes the contact surface 12a of the base portion 12 of the first fin 10 to contact the cap 4, and the contact surface 13a of the base portion 13 of the second fin 11 to contact the semiconductor chip 3.
are biased so that they come into contact with each other with appropriate contact pressure.
ベース部１２の接触面１２ａは、半導体チップ３の回路
基板２上の配列ピッチとほぼ等しい幅および奥行をもっ
て設定されており、ベース部１３の接触面１３ａの面４
ｆｔは、半導体チップ３の背面の面積より犬きく設定さ
れている。The contact surface 12a of the base portion 12 is set to have a width and depth approximately equal to the arrangement pitch of the semiconductor chips 3 on the circuit board 2, and the contact surface 12a of the base portion 13 is
ft is set to be larger than the area of the back surface of the semiconductor chip 3.
つぎに、本発明の第１実施例の作用を説明する。Next, the operation of the first embodiment of the present invention will be explained.
半導体チップ３の発熱は、極めて薄い熱伝導性気体層２
５を介して、第２のフィン１１のベース部１３に伝えら
れ、このベース部１３を横方向に拡がって伝熱面積を拡
大した後、フィン部１６に伝えられ、気体層２５を介し
て第１のフィン１０のフィン部１５、ベース部１２に伝
えられ、さらに気体層２５を介してキャップ４に伝えら
れ、最終的に水冷ジャケット８により除去される。The heat generated by the semiconductor chip 3 is transmitted through the extremely thin thermally conductive gas layer 2.
5, the heat is transmitted to the base part 13 of the second fin 11, and after expanding this base part 13 in the lateral direction to expand the heat transfer area, it is transmitted to the fin part 16, and the heat is transmitted to the second fin part 11 through the gas layer 25. The gas is transmitted to the fin portion 15 of the fin 10 of No. 1 and the base portion 12, and is further transmitted to the cap 4 via the gas layer 25, and finally removed by the water cooling jacket 8.
ベース部１２．１３の各接触面１２ａｌ１３ａおよびキ
ャップ４のベース部１２と接触面４ａけ、極めて平滑に
仕上げられており、接触熱抵抗は十分小さな値に押えら
れており、伝熱効率は高い。Each contact surface 12al13a of the base portion 12.13 and the contact surface 4a with the base portion 12 of the cap 4 are finished extremely smooth, the contact thermal resistance is suppressed to a sufficiently small value, and the heat transfer efficiency is high.
またベース部１２．１３の各接触面１２ａ、１３＆は、
キャップ４内面および半導体チップ３背面上で容易に滑
ることができるので、回路基板２とキャップ４との温度
および線膨張率の差による熱変形を吸収することができ
る。Further, each contact surface 12a, 13& of the base portion 12.13 is
Since it can easily slide on the inner surface of the cap 4 and the back surface of the semiconductor chip 3, thermal deformation due to the difference in temperature and linear expansion coefficient between the circuit board 2 and the cap 4 can be absorbed.
またフィン部１５．１６の嵌合部分は、精密に制御され
た微小間隙をもって嵌合されているので、半導体チップ
３のわずかな傾きに追従して第２のフィンが傾いても、
第１のフィン１０によってその動きが拘束されることが
ない。従って、第２のフィン１１のベース部１３は、半
導体チップ３の背面と常に良好な平面接触状態が保持さ
れ伝熱効率が高くなる。また半導体チップ３が傾いても
、第１および第２のフィン１０．１１が互いに接触する
ことが少なく安定した熱抵抗値が得られる。Furthermore, since the fitting portions of the fin portions 15 and 16 are fitted with precisely controlled minute gaps, even if the second fins are tilted following the slight tilt of the semiconductor chip 3,
Its movement is not restricted by the first fin 10. Therefore, the base portion 13 of the second fin 11 is always kept in good planar contact with the back surface of the semiconductor chip 3, and the heat transfer efficiency is increased. Furthermore, even if the semiconductor chip 3 is tilted, the first and second fins 10.11 are less likely to come into contact with each other, and a stable thermal resistance value can be obtained.
また第１および第２のフィン１０．１１は、それぞれベ
ース部１２．１３とフィン部１５．１６とが一体的に形
成されているので、ベース部１２． ′１３の横
方向の拡がり熱抵抗が小さくなり伝熱効率が高くなる。Furthermore, since the first and second fins 10.11 each have a base portion 12.13 and a fin portion 15.16 integrally formed, the base portion 12.11. The lateral expansion of '13 reduces the thermal resistance and increases the heat transfer efficiency.
また第１のフィン１０のベース部１２は、キャップ４内
面に隙間なく配置されており、これによって第１のフィ
ン１０の位置決めが自動的になされる。Furthermore, the base portion 12 of the first fin 10 is disposed on the inner surface of the cap 4 without any gap, thereby automatically positioning the first fin 10.
なお、第１のフィンｌＯのベース部１２とキャップ４と
の接触面、第１．第２のフィン部１５゜１６の嵌合部分
の微小間隙および第２のフィン１１のベース部１３と半
導体チップ３との接触面に熱伝導性の液体、例えば、グ
リースを介在させると、装置ｌの伝熱効率がさらに高ま
る。Note that the contact surface between the base portion 12 of the first fin 1O and the cap 4, the first fin 1O. By interposing a thermally conductive liquid, such as grease, in the micro gap between the fitting portions of the second fin portions 15 and 16 and the contact surface between the base portion 13 of the second fin 11 and the semiconductor chip 3, the device l The heat transfer efficiency is further increased.
第３図は、本発明の第２実施例に係り、第１のフィン１
００ベース部１２とキャップ４とのそれぞれの接触面に
は、凹凸部１２ｂ１４ｂが形成されており、これらの凹
凸部１２ｔ）、４ｂが互いに嵌合されるようになってい
る。FIG. 3 shows a first fin 1 according to a second embodiment of the present invention.
A concave and convex portion 12b14b is formed on each contact surface between the base portion 12 and the cap 4, and these concave and convex portions 12t) and 4b are fitted into each other.
その他の構成は、第１図および第２図に示す第１実施例
のものと同じであり、同一部品には、同一符号を付して
説明は省略する。The rest of the structure is the same as that of the first embodiment shown in FIGS. 1 and 2, and the same parts are given the same reference numerals and explanations will be omitted.
つぎに、上記第２実施例の作用を説明する。Next, the operation of the second embodiment will be explained.
凹凸部１２ｂ、４ｂを互いに嵌合することにより、第１
のフィン１０のキャップ４内面上における位置決めが、
より容易になされるとともに、ベース部１２のキャップ
４との接触面積拡大効果により、ベース部１２とキャッ
プ４との間の接触熱抵抗が低減し、装置】の伝熱効率が
さらに高くなる。By fitting the uneven parts 12b and 4b together, the first
The positioning of the fins 10 on the inner surface of the cap 4 is as follows:
In addition, due to the effect of expanding the contact area of the base portion 12 with the cap 4, the contact thermal resistance between the base portion 12 and the cap 4 is reduced, and the heat transfer efficiency of the device is further increased.
上述のとおり、本発明によれば、ベース部の横方向の拡
がり熱抵抗が小さいので、伝熱効率が高くなり、冷却性
能が向上する。また半導体チップ布値（八で東 幣＋
ｂＦ ７Ｔ笛９のフィン然φ；万を八に接触することが
少ないので、安定した熱抵抗値が得られ、伝熱効率のば
らつきが少なく信頼性が向上する。さらに、第１のフィ
ンのキャップに対する位置決めが容易に行なわれる。ま
た構成部品点数が少なくなったので、量産性に優れた半
導体冷却装置が得られる。As described above, according to the present invention, the lateral expansion thermal resistance of the base portion is small, so the heat transfer efficiency is increased and the cooling performance is improved. In addition, semiconductor chip price (8 de Tohei +
Since the fins of the bF 7T whistle 9 rarely come into contact with each other, a stable thermal resistance value is obtained, and there is little variation in heat transfer efficiency, improving reliability. Furthermore, positioning of the first fin with respect to the cap is easily performed. Furthermore, since the number of component parts is reduced, a semiconductor cooling device with excellent mass productivity can be obtained.
第１図および第２図は本発明の第１実施例に係り、第１
図は半導体冷却装置の縦断面図、第２図は第１図に示す
ものの部分拡大縦断面図、第３図は本発明の第２実施例
に係る半導体冷却装置の部分拡大縦断面図である。
ｌ・・・半導体冷却装置、２・・・回路基板、３・・・
半導体チップ、 ４・・・キャップ、４ｂ・・・キャ
ップ４の凹凸部、
５・・・空間部、 ６・・・熱的ブリッジ素子
、１０・・・第１のフィン、１１・・・第２のフィン、
１２・・・第１のフィンｌＯのベース部、１２ａ・・・
ベース部１２の接触面、
１２ｔ）・・・ベース部１２の凹凸部、ｌ３・・・第２
のフィン１１のペース部、１３ａ・・・ベース部】３の
接触面、
］５・・・第１のフィン１０のフィン部、１６・・・第
２のフィン１１のフィン部、２２・・・弾性部材の一例
たる圧縮ばね。FIG. 1 and FIG. 2 relate to a first embodiment of the present invention.
2 is a partially enlarged longitudinal sectional view of the semiconductor cooling device shown in FIG. 1, and FIG. 3 is a partially enlarged longitudinal sectional view of the semiconductor cooling device according to the second embodiment of the present invention. . l...Semiconductor cooling device, 2...Circuit board, 3...
Semiconductor chip, 4... Cap, 4b... Uneven portion of cap 4, 5... Space, 6... Thermal bridge element, 10... First fin, 11... Second fins,
12...Base portion of first fin lO, 12a...
Contact surface of base part 12, 12t)...Concave and convex portion of base part 12, l3...Second
13a...Base part]3 contact surface, ]5...Fin part of first fin 10, 16...Fin part of second fin 11, 22... A compression spring is an example of an elastic member.
Claims (4)
ップと、前記回路基板を被覆するキャップと、該キャッ
プと前記回路基板とにより形成され熱伝導性の気体が封
入された空間部に前記半導体チップと対向して配置され
た熱的ブリッジ素子とを設けた半導体冷却装置において
、前記熱的ブリッジ素子が、前記キャップと接触する接
触面をもつベース部と該ベース部と一体的に形成された
櫛歯状のフィン部とからなる第１のフィンと、該第１の
フィンのフィン部と微小な間隙をもつて嵌合される櫛歯
状のフィン部と該フィン部と一体的に形成され前記半導
体チップと接触する接触面をもつベース部とからなる第
２のフィンと、前記第１および第２のフィンのベース部
に作用点をもち該ベース部の接触面をそれぞれ前記キャ
ップおよび半導体チップに押圧するように付勢した少な
くとも１個の弾性部材とを設けたことを特徴とする半導
体冷却装置。(1) One or more semiconductor chips mounted on a circuit board, a cap covering the circuit board, and a space formed by the cap and the circuit board and filled with a thermally conductive gas. In the semiconductor cooling device provided with a thermal bridge element disposed facing the semiconductor chip, the thermal bridge element is integrally formed with a base portion having a contact surface that contacts the cap and the base portion. a first fin consisting of a comb-like fin portion, which is integrally formed with the comb-like fin portion, and a comb-like fin portion that is fitted with the fin portion of the first fin with a minute gap; a second fin having a base portion formed therein and having a contact surface that contacts the semiconductor chip; and a second fin having a point of action on the base portions of the first and second fins and contacting the contact surface of the base portion with the cap and the second fin, respectively. 1. A semiconductor cooling device comprising: at least one elastic member biased to press against a semiconductor chip.
ップと、前記回路基板を被覆するキャップと、該キャッ
プと前記回路基板とにより形成され熱伝導性の気体が封
入された空間部に前記半導体チップと対向して配置され
た熱的ブリッジ素子とを設けた半導体冷却装置において
、前記熱的ブリッジ素子が、前記キャップと接触する接
触面をもつベース部と該ベース部と一体的に形成された
櫛歯状のフィン部とからなる第１のフィンと、該第１の
フィンのフィン部と微小な間隙をもつて嵌合される櫛歯
状のフィン部と該フィン部と一体的に形成され前記半導
体チップと接触する接触面をもつベース部とからなる第
２のフィンと、前記第１および第２のフィンのベース部
に作用点をもち該ベース部の接触面をそれぞれ前記キャ
ップおよび半導体チップに押圧するように付勢した少な
くとも１個の弾性部材とを設け、かつ前記第１のフィン
のベース部の接触面が、前記回路基板上に配列された半
導体チップの配列ピッチとほぼ等しい幅および奥行きを
もつて設定されたことを特徴とする半導体冷却装置。(2) One or more semiconductor chips mounted on a circuit board, a cap covering the circuit board, and a space formed by the cap and the circuit board and filled with a thermally conductive gas. In the semiconductor cooling device provided with a thermal bridge element disposed facing the semiconductor chip, the thermal bridge element is integrally formed with a base portion having a contact surface that contacts the cap and the base portion. a first fin consisting of a comb-like fin portion, which is integrally formed with the comb-like fin portion, and a comb-like fin portion that is fitted with the fin portion of the first fin with a minute gap; a second fin having a base portion formed therein and having a contact surface that contacts the semiconductor chip; and a second fin having a point of action on the base portions of the first and second fins and contacting the contact surface of the base portion with the cap and the second fin, respectively. at least one elastic member biased to press against the semiconductor chip, and the contact surface of the base portion of the first fin is approximately equal to the arrangement pitch of the semiconductor chips arranged on the circuit board. A semiconductor cooling device characterized by being set with a width and a depth.
および第２のフィン部の嵌合部の微小間隙および前記第
２のフィンのベース部の接触面にそれぞれ熱伝導性の液
体を介在させたことを特徴とする特許請求の範囲第１項
に記載の半導体冷却装置。(3) a contact surface of the base portion of the first fin;
According to claim 1, a thermally conductive liquid is interposed in the micro gap of the fitting part of the second fin part and the contact surface of the base part of the second fin part. semiconductor cooling equipment.
ャップの前記第１のフィンのベース部との接触面に互い
に嵌合する凹凸部を設けたことを特徴とする特許請求の
範囲第１項に記載の半導体冷却装置。(4) A contact surface of the base portion of the first fin and a contact surface of the cap with the base portion of the first fin are provided with uneven portions that fit into each other. The semiconductor cooling device described in .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7381685A JPS61231744A (en) | 1985-04-08 | 1985-04-08 | Semiconductor cooling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7381685A JPS61231744A (en) | 1985-04-08 | 1985-04-08 | Semiconductor cooling device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61231744A true JPS61231744A (en) | 1986-10-16 |
Family
ID=13529058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7381685A Pending JPS61231744A (en) | 1985-04-08 | 1985-04-08 | Semiconductor cooling device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61231744A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5515912A (en) * | 1990-03-02 | 1996-05-14 | Hitachi, Ltd. | Cooling apparatus of electronic devices |
| US5705850A (en) * | 1993-09-20 | 1998-01-06 | Hitachi, Ltd. | Semiconductor module |
| JP2010118710A (en) * | 2010-03-03 | 2010-05-27 | Toshiba Corp | Electronic device |
| WO2014132399A1 (en) * | 2013-02-28 | 2014-09-04 | 三菱電機株式会社 | Heat dissipating structure |
| CN106328612A (en) * | 2015-06-25 | 2017-01-11 | 浙江盾安人工环境股份有限公司 | Chip heat radiation apparatus and electronic assembly thereof |
| JP2018206933A (en) * | 2017-06-02 | 2018-12-27 | 株式会社デンソー | Power supply device |
| CN113983620A (en) * | 2021-10-27 | 2022-01-28 | 郑州新基业汽车电子有限公司 | Novel multi-functional clarifier of electricity generation |
-
1985
- 1985-04-08 JP JP7381685A patent/JPS61231744A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5515912A (en) * | 1990-03-02 | 1996-05-14 | Hitachi, Ltd. | Cooling apparatus of electronic devices |
| US5705850A (en) * | 1993-09-20 | 1998-01-06 | Hitachi, Ltd. | Semiconductor module |
| JP2010118710A (en) * | 2010-03-03 | 2010-05-27 | Toshiba Corp | Electronic device |
| WO2014132399A1 (en) * | 2013-02-28 | 2014-09-04 | 三菱電機株式会社 | Heat dissipating structure |
| CN106328612A (en) * | 2015-06-25 | 2017-01-11 | 浙江盾安人工环境股份有限公司 | Chip heat radiation apparatus and electronic assembly thereof |
| JP2018206933A (en) * | 2017-06-02 | 2018-12-27 | 株式会社デンソー | Power supply device |
| CN113983620A (en) * | 2021-10-27 | 2022-01-28 | 郑州新基业汽车电子有限公司 | Novel multi-functional clarifier of electricity generation |
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