JPS6122872B2 - - Google Patents
Info
- Publication number
- JPS6122872B2 JPS6122872B2 JP13361578A JP13361578A JPS6122872B2 JP S6122872 B2 JPS6122872 B2 JP S6122872B2 JP 13361578 A JP13361578 A JP 13361578A JP 13361578 A JP13361578 A JP 13361578A JP S6122872 B2 JPS6122872 B2 JP S6122872B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resistance
- ion
- implanted
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 description 13
- 239000013078 crystal Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 230000005669 field effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13361578A JPS5559781A (en) | 1978-10-30 | 1978-10-30 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13361578A JPS5559781A (en) | 1978-10-30 | 1978-10-30 | Method of fabricating semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5559781A JPS5559781A (en) | 1980-05-06 |
| JPS6122872B2 true JPS6122872B2 (fr) | 1986-06-03 |
Family
ID=15108947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13361578A Granted JPS5559781A (en) | 1978-10-30 | 1978-10-30 | Method of fabricating semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5559781A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58147075A (ja) * | 1982-02-25 | 1983-09-01 | Toshiba Corp | 電界効果形トランジスタ用ウエハの製造方法 |
| JPH0812867B2 (ja) * | 1984-05-23 | 1996-02-07 | 日本電気株式会社 | 半導体装置 |
-
1978
- 1978-10-30 JP JP13361578A patent/JPS5559781A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5559781A (en) | 1980-05-06 |
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