JPS6122871B2 - - Google Patents

Info

Publication number
JPS6122871B2
JPS6122871B2 JP12570580A JP12570580A JPS6122871B2 JP S6122871 B2 JPS6122871 B2 JP S6122871B2 JP 12570580 A JP12570580 A JP 12570580A JP 12570580 A JP12570580 A JP 12570580A JP S6122871 B2 JPS6122871 B2 JP S6122871B2
Authority
JP
Japan
Prior art keywords
layer
electrode
thyristor
region
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12570580A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5749269A (en
Inventor
Masami Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12570580A priority Critical patent/JPS5749269A/ja
Publication of JPS5749269A publication Critical patent/JPS5749269A/ja
Publication of JPS6122871B2 publication Critical patent/JPS6122871B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
JP12570580A 1980-09-08 1980-09-08 Bidirectional thyristor Granted JPS5749269A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12570580A JPS5749269A (en) 1980-09-08 1980-09-08 Bidirectional thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12570580A JPS5749269A (en) 1980-09-08 1980-09-08 Bidirectional thyristor

Publications (2)

Publication Number Publication Date
JPS5749269A JPS5749269A (en) 1982-03-23
JPS6122871B2 true JPS6122871B2 (xx) 1986-06-03

Family

ID=14916680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12570580A Granted JPS5749269A (en) 1980-09-08 1980-09-08 Bidirectional thyristor

Country Status (1)

Country Link
JP (1) JPS5749269A (xx)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2585882B1 (fr) * 1985-07-30 1988-06-24 Thomson Csf Triac desensibilise vis-a-vis des risques de reamorcage a la commutation sur charge reactive
JPH036059A (ja) * 1989-06-02 1991-01-11 Toa Boshoku Kk 交流制御素子
JPH03101166A (ja) * 1989-09-13 1991-04-25 Toa Boshoku Kk 交流制御素子
DE19721365A1 (de) * 1997-05-22 1998-11-26 Asea Brown Boveri Beidseitig steuerbarer Thyristor
WO2016096956A1 (en) 2014-12-17 2016-06-23 Abb Technology Ag Bidirectional power semiconductor device

Also Published As

Publication number Publication date
JPS5749269A (en) 1982-03-23

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