JPS6122871B2 - - Google Patents

Info

Publication number
JPS6122871B2
JPS6122871B2 JP55125705A JP12570580A JPS6122871B2 JP S6122871 B2 JPS6122871 B2 JP S6122871B2 JP 55125705 A JP55125705 A JP 55125705A JP 12570580 A JP12570580 A JP 12570580A JP S6122871 B2 JPS6122871 B2 JP S6122871B2
Authority
JP
Japan
Prior art keywords
layer
electrode
thyristor
region
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55125705A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5749269A (en
Inventor
Masami Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55125705A priority Critical patent/JPS5749269A/ja
Publication of JPS5749269A publication Critical patent/JPS5749269A/ja
Publication of JPS6122871B2 publication Critical patent/JPS6122871B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/80Bidirectional devices, e.g. triacs 

Landscapes

  • Thyristors (AREA)
JP55125705A 1980-09-08 1980-09-08 Bidirectional thyristor Granted JPS5749269A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55125705A JPS5749269A (en) 1980-09-08 1980-09-08 Bidirectional thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55125705A JPS5749269A (en) 1980-09-08 1980-09-08 Bidirectional thyristor

Publications (2)

Publication Number Publication Date
JPS5749269A JPS5749269A (en) 1982-03-23
JPS6122871B2 true JPS6122871B2 (enrdf_load_stackoverflow) 1986-06-03

Family

ID=14916680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55125705A Granted JPS5749269A (en) 1980-09-08 1980-09-08 Bidirectional thyristor

Country Status (1)

Country Link
JP (1) JPS5749269A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2585882B1 (fr) * 1985-07-30 1988-06-24 Thomson Csf Triac desensibilise vis-a-vis des risques de reamorcage a la commutation sur charge reactive
JPH036059A (ja) * 1989-06-02 1991-01-11 Toa Boshoku Kk 交流制御素子
JPH03101166A (ja) * 1989-09-13 1991-04-25 Toa Boshoku Kk 交流制御素子
DE19721365A1 (de) * 1997-05-22 1998-11-26 Asea Brown Boveri Beidseitig steuerbarer Thyristor
EP3235003B1 (en) 2014-12-17 2019-03-06 ABB Schweiz AG Bidirectional power semiconductor device

Also Published As

Publication number Publication date
JPS5749269A (en) 1982-03-23

Similar Documents

Publication Publication Date Title
US3476993A (en) Five layer and junction bridging terminal switching device
US4967256A (en) Overvoltage protector
US3124703A (en) Figure
US4450467A (en) Gate turn-off thyristor with selective anode penetrating shorts
US3947864A (en) Diode-integrated thyristor
US3391310A (en) Semiconductor switch
JPS6074677A (ja) 複合型サイリスタ
US3978514A (en) Diode-integrated high speed thyristor
JPS6122871B2 (enrdf_load_stackoverflow)
US3434023A (en) Semiconductor switching devices with a tunnel junction diode in series with the gate electrode
US3967308A (en) Semiconductor controlled rectifier
US3328652A (en) Voltage comparator
US3879744A (en) Bidirectional thyristor
US3331000A (en) Gate turn off semiconductor switch having a composite gate region with different impurity concentrations
GB2208257A (en) Overvoltage protector
US3284681A (en) Pnpn semiconductor switching devices with stabilized firing characteristics
US3284680A (en) Semiconductor switch
JPH01171273A (ja) 双方向性半導体スイッチング素子
JPH0138384B2 (enrdf_load_stackoverflow)
US4060824A (en) Slow speed semiconductor switching device
JPH0468791B2 (enrdf_load_stackoverflow)
JPH03101166A (ja) 交流制御素子
JP2724898B2 (ja) 両方向性2端子サイリスタ
JPS6050067B2 (ja) 静電誘導形逆導通サイリスタ
JPH0484466A (ja) ダイオード