JPS61220455A - 半導体記憶装置の製造方法 - Google Patents
半導体記憶装置の製造方法Info
- Publication number
- JPS61220455A JPS61220455A JP60062315A JP6231585A JPS61220455A JP S61220455 A JPS61220455 A JP S61220455A JP 60062315 A JP60062315 A JP 60062315A JP 6231585 A JP6231585 A JP 6231585A JP S61220455 A JPS61220455 A JP S61220455A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- insulating film
- oxide film
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 abstract description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 5
- 239000011229 interlayer Substances 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 abstract description 3
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60062315A JPS61220455A (ja) | 1985-03-27 | 1985-03-27 | 半導体記憶装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60062315A JPS61220455A (ja) | 1985-03-27 | 1985-03-27 | 半導体記憶装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61220455A true JPS61220455A (ja) | 1986-09-30 |
| JPH0353785B2 JPH0353785B2 (enrdf_load_stackoverflow) | 1991-08-16 |
Family
ID=13196577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60062315A Granted JPS61220455A (ja) | 1985-03-27 | 1985-03-27 | 半導体記憶装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61220455A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4826779A (en) * | 1986-10-24 | 1989-05-02 | Teledyne Industries, Inc. | Integrated capacitor and method of fabricating same |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7321354B1 (en) | 1996-10-31 | 2008-01-22 | Kopin Corporation | Microdisplay for portable communication systems |
| US7372447B1 (en) | 1996-10-31 | 2008-05-13 | Kopin Corporation | Microdisplay for portable communication systems |
-
1985
- 1985-03-27 JP JP60062315A patent/JPS61220455A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4826779A (en) * | 1986-10-24 | 1989-05-02 | Teledyne Industries, Inc. | Integrated capacitor and method of fabricating same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0353785B2 (enrdf_load_stackoverflow) | 1991-08-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |