JPS61219179A - 半導体焼結膜の製造方法 - Google Patents

半導体焼結膜の製造方法

Info

Publication number
JPS61219179A
JPS61219179A JP60059394A JP5939485A JPS61219179A JP S61219179 A JPS61219179 A JP S61219179A JP 60059394 A JP60059394 A JP 60059394A JP 5939485 A JP5939485 A JP 5939485A JP S61219179 A JPS61219179 A JP S61219179A
Authority
JP
Japan
Prior art keywords
firing
substrate
boat
film
sintered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60059394A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0543195B2 (enrdf_load_stackoverflow
Inventor
Akihiko Nakano
明彦 中野
Hitoshi Matsumoto
仁 松本
Yasumasa Komatsu
小松　康允
Hiroshi Uda
宇田　宏
Seiji Ikegami
池上　清治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP60059394A priority Critical patent/JPS61219179A/ja
Publication of JPS61219179A publication Critical patent/JPS61219179A/ja
Publication of JPH0543195B2 publication Critical patent/JPH0543195B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass

Landscapes

  • Photovoltaic Devices (AREA)
JP60059394A 1985-03-26 1985-03-26 半導体焼結膜の製造方法 Granted JPS61219179A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60059394A JPS61219179A (ja) 1985-03-26 1985-03-26 半導体焼結膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60059394A JPS61219179A (ja) 1985-03-26 1985-03-26 半導体焼結膜の製造方法

Publications (2)

Publication Number Publication Date
JPS61219179A true JPS61219179A (ja) 1986-09-29
JPH0543195B2 JPH0543195B2 (enrdf_load_stackoverflow) 1993-06-30

Family

ID=13112023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60059394A Granted JPS61219179A (ja) 1985-03-26 1985-03-26 半導体焼結膜の製造方法

Country Status (1)

Country Link
JP (1) JPS61219179A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6424438A (en) * 1987-07-20 1989-01-26 Matsushita Electric Industrial Co Ltd Manufacture of photosensor and device therefor
JP2009513018A (ja) * 2005-10-20 2009-03-26 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 溶液から調製されるナノクリスタル太陽電池
US7842178B2 (en) 2005-04-18 2010-11-30 University Of Iowa Research Foundation Magnet incorporated electrically conductive electrodes

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6424438A (en) * 1987-07-20 1989-01-26 Matsushita Electric Industrial Co Ltd Manufacture of photosensor and device therefor
US7842178B2 (en) 2005-04-18 2010-11-30 University Of Iowa Research Foundation Magnet incorporated electrically conductive electrodes
JP2009513018A (ja) * 2005-10-20 2009-03-26 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 溶液から調製されるナノクリスタル太陽電池
US8440906B2 (en) 2005-10-20 2013-05-14 The Regents Of The University Of California Nanocrystal solar cells processed from solution
KR101322646B1 (ko) * 2005-10-20 2013-10-25 더 리전츠 오브 더 유니버시티 오브 캘리포니아 용액으로부터 형성된 나노결정 태양 전지

Also Published As

Publication number Publication date
JPH0543195B2 (enrdf_load_stackoverflow) 1993-06-30

Similar Documents

Publication Publication Date Title
US4581108A (en) Process of forming a compound semiconductive material
EP0574716A1 (en) Method for preparing chalcopyrite-type compound
Folmer et al. Structural and solar conversion characteristics of the (Cu2Se) x (In2Se3) 1− x system
JP2542643B2 (ja) センサの製造方法
JP2001167908A (ja) 半導体電子部品
JP3735151B2 (ja) 積層型チップバリスタ及びその製造方法
JP4471855B2 (ja) カルコパイライト型薄膜太陽電池の製造方法
US4178395A (en) Methods for improving solar cell open circuit voltage
JPS61219179A (ja) 半導体焼結膜の製造方法
JPS58502078A (ja) 半導体装置の製造方法およびそうして得られる半導体装置
JPH05347391A (ja) 強誘電体記憶装置
EP0195152A1 (en) Process of forming a compound semiconductive material
JPH07216533A (ja) カルコパイライト構造半導体薄膜の製造方法
JPH0365907B2 (enrdf_load_stackoverflow)
JPH0464192B2 (enrdf_load_stackoverflow)
JPS59165067A (ja) 光導電性薄膜の製造方法
JPS6253956B2 (enrdf_load_stackoverflow)
JPH01181477A (ja) ＣｄＴｅ太陽電池透明電極の製造方法
JPH01179743A (ja) ＣｄＳ焼結膜の製造方法
JPS6357951B2 (enrdf_load_stackoverflow)
JPS6362469B2 (enrdf_load_stackoverflow)
JPH08124720A (ja) バリスタとその製造方法
JP2007273820A (ja) バリスタ素体及びバリスタ
JPH08199333A (ja) 硫化鉄薄膜の製造方法
JPH0818078A (ja) ▲ｉｉ▼−▲ｖｉ▼族化合物半導体太陽電池の製造方法