JPS6121194B2 - - Google Patents

Info

Publication number
JPS6121194B2
JPS6121194B2 JP19306081A JP19306081A JPS6121194B2 JP S6121194 B2 JPS6121194 B2 JP S6121194B2 JP 19306081 A JP19306081 A JP 19306081A JP 19306081 A JP19306081 A JP 19306081A JP S6121194 B2 JPS6121194 B2 JP S6121194B2
Authority
JP
Japan
Prior art keywords
ampoule
single crystal
furnace
crystal growth
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP19306081A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5895689A (ja
Inventor
Kyoichi Kinoshita
Kyomasa Sugii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP19306081A priority Critical patent/JPS5895689A/ja
Publication of JPS5895689A publication Critical patent/JPS5895689A/ja
Publication of JPS6121194B2 publication Critical patent/JPS6121194B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP19306081A 1981-12-01 1981-12-01 単結晶育成法 Granted JPS5895689A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19306081A JPS5895689A (ja) 1981-12-01 1981-12-01 単結晶育成法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19306081A JPS5895689A (ja) 1981-12-01 1981-12-01 単結晶育成法

Publications (2)

Publication Number Publication Date
JPS5895689A JPS5895689A (ja) 1983-06-07
JPS6121194B2 true JPS6121194B2 (cg-RX-API-DMAC7.html) 1986-05-26

Family

ID=16301519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19306081A Granted JPS5895689A (ja) 1981-12-01 1981-12-01 単結晶育成法

Country Status (1)

Country Link
JP (1) JPS5895689A (cg-RX-API-DMAC7.html)

Also Published As

Publication number Publication date
JPS5895689A (ja) 1983-06-07

Similar Documents

Publication Publication Date Title
US5968261A (en) Method for growing large silicon carbide single crystals
JP2012126644A (ja) 炭素ドーピング、抵抗率制御、温度勾配制御を伴う、剛性サポートを備える半導体結晶を成長させるための方法および装置
JP4108782B2 (ja) 核上に単結晶シリコンカーバイドを形成するための装置および方法
JP4052678B2 (ja) 大形炭化珪素単結晶成長装置
JPS5948792B2 (ja) 炭化けい素結晶成長法
JP2008239480A (ja) 半導体結晶
JPS6121194B2 (cg-RX-API-DMAC7.html)
JPH0645519B2 (ja) ｐ型ＳｉＣ単結晶の成長方法
JPH0570276A (ja) 単結晶の製造装置
JP2823257B2 (ja) 半導体単結晶製造装置
US3649210A (en) Apparatus for crucible-free zone-melting of crystalline materials
TWI875366B (zh) 一種具有多個沉積位點的長晶裝置與其製程
JPH02289484A (ja) 単結晶成長装置
JPH0449185Y2 (cg-RX-API-DMAC7.html)
JPH0316988A (ja) 化合物半導体単結晶製造装置
JP2830306B2 (ja) 化合物半導体結晶の製造装置
JP2665778B2 (ja) 半導体単結晶引上げ装置
JP2543449B2 (ja) 結晶成長方法および装置
JPH069025Y2 (ja) 化合物半導体単結晶製造装置
JPH05339094A (ja) 酸化物単結晶の製造装置
JPH03153594A (ja) 半導体単結晶製造装置
JPH05178683A (ja) 化合物半導体の単結晶製造装置
JPH01264989A (ja) 単結晶の育成装置
JPH05262596A (ja) 四ホウ酸リチウム単結晶の製造方法
JPS60255698A (ja) 化合物半導体製造用部材及びその製造法