JPS61210671A - 電力用半導体装置及びその製造方法 - Google Patents
電力用半導体装置及びその製造方法Info
- Publication number
- JPS61210671A JPS61210671A JP60050281A JP5028185A JPS61210671A JP S61210671 A JPS61210671 A JP S61210671A JP 60050281 A JP60050281 A JP 60050281A JP 5028185 A JP5028185 A JP 5028185A JP S61210671 A JPS61210671 A JP S61210671A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- junction
- type
- silicon
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 239000012535 impurity Substances 0.000 claims abstract description 12
- 239000012212 insulator Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 30
- 229910052710 silicon Inorganic materials 0.000 abstract description 22
- 239000010703 silicon Substances 0.000 abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 20
- 230000003647 oxidation Effects 0.000 abstract description 7
- 238000007254 oxidation reaction Methods 0.000 abstract description 7
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 5
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- 238000001259 photo etching Methods 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract 3
- 238000000059 patterning Methods 0.000 abstract 1
- 239000002131 composite material Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 5
- 210000000746 body region Anatomy 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- XUKUURHRXDUEBC-SXOMAYOGSA-N (3s,5r)-7-[2-(4-fluorophenyl)-3-phenyl-4-(phenylcarbamoyl)-5-propan-2-ylpyrrol-1-yl]-3,5-dihydroxyheptanoic acid Chemical compound C=1C=CC=CC=1C1=C(C=2C=CC(F)=CC=2)N(CC[C@@H](O)C[C@H](O)CC(O)=O)C(C(C)C)=C1C(=O)NC1=CC=CC=C1 XUKUURHRXDUEBC-SXOMAYOGSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 208000005156 Dehydration Diseases 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 210000003813 thumb Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/115—Dielectric isolations, e.g. air gaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/115—Dielectric isolations, e.g. air gaps
- H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60050281A JPS61210671A (ja) | 1985-03-15 | 1985-03-15 | 電力用半導体装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60050281A JPS61210671A (ja) | 1985-03-15 | 1985-03-15 | 電力用半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61210671A true JPS61210671A (ja) | 1986-09-18 |
| JPH0550867B2 JPH0550867B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-07-30 |
Family
ID=12854543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60050281A Granted JPS61210671A (ja) | 1985-03-15 | 1985-03-15 | 電力用半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61210671A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
-
1985
- 1985-03-15 JP JP60050281A patent/JPS61210671A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0550867B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-07-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2542448B2 (ja) | 電界効果トランジスタおよびその製造方法 | |
| JP2995723B2 (ja) | ウェーハ・ボンディングを利用した縦型電流半導体デバイスおよびその製作方法 | |
| US5726088A (en) | Method of manufacturing a semiconductor device having a buried insulated gate | |
| US5068704A (en) | Method of manufacturing semiconductor device | |
| JPH0770476B2 (ja) | 半導体装置の製造方法 | |
| JPH05347413A (ja) | 半導体装置の製造方法 | |
| JPH0783050B2 (ja) | 半導体素子の製造方法 | |
| JPH03165577A (ja) | 半導体デバイスとその製造方法 | |
| WO1995004375A1 (en) | Semiconductor device and its manufacture | |
| JPH0544835B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JP4593115B2 (ja) | ＳｉＣＯＩ基板を備えたショットキーパワーダイオード、およびその製造方法 | |
| JPH0578949B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JPH0296350A (ja) | 半導体装置の製造方法 | |
| JP3864430B2 (ja) | 半導体装置の製造方法 | |
| JP7478604B2 (ja) | 半導体装置およびその製造方法 | |
| US9048103B2 (en) | Method for producing semiconductor device | |
| JPS61210671A (ja) | 電力用半導体装置及びその製造方法 | |
| JPS61208268A (ja) | 伝導度変調型半導体装置 | |
| JPH0473615B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JPH06177390A (ja) | 絶縁ゲート型バイポーラトランジスタの製造方法 | |
| JPS62163372A (ja) | 電界効果型半導体装置 | |
| CN115552634B (en) | Semiconductor device and method for manufacturing the same | |
| JP7513565B2 (ja) | スイッチング素子の製造方法 | |
| KR100361696B1 (ko) | 쇼트키베리어다이오드 및 그 제조방법 | |
| JPS62221122A (ja) | 半導体装置の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |