JPS61210643A - Semiconductor assembling device - Google Patents

Semiconductor assembling device

Info

Publication number
JPS61210643A
JPS61210643A JP60052742A JP5274285A JPS61210643A JP S61210643 A JPS61210643 A JP S61210643A JP 60052742 A JP60052742 A JP 60052742A JP 5274285 A JP5274285 A JP 5274285A JP S61210643 A JPS61210643 A JP S61210643A
Authority
JP
Japan
Prior art keywords
winding
gap
core
heated
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60052742A
Other languages
Japanese (ja)
Inventor
Tsunemitsu Koda
國府田　恒充
Hisashi Sato
久 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60052742A priority Critical patent/JPS61210643A/en
Publication of JPS61210643A publication Critical patent/JPS61210643A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75253—Means for applying energy, e.g. heating means adapted for localised heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75264—Means for applying energy, e.g. heating means by induction heating, i.e. coils
    • H01L2224/75265—Means for applying energy, e.g. heating means by induction heating, i.e. coils in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/8322—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/83222—Induction heating, i.e. eddy currents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83234—Applying energy for connecting using means for applying energy being within the device, e.g. integrated heater
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01072—Hafnium [Hf]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To make it possible to heat only a required part locally, by arranging the gap in a core, around which a winding is wound, close to the heating part of a leadframe, and connecting the winding to a high frequency oscillator. CONSTITUTION:A gap 4 in a core 3, around which a winding 2 is wound, is arranged close to a part of a leadframe 5, which is required to be heated. The winding 2 is connected to the high frequency oscillator 1. When a current flows through the winding 2 from the oscillator 1, magnetic flux passes through the core 3. A high frequency magnetic field generated in the gap 4 induces an induction current at a semiconductor element mounting part 7 of the frame 5. Only the mounting part 7 is heated in a spot, and a thermosetting resin paste 8 is dissolved. A semiconductor element 6 is bonded to the mounting part 7 on the frame 5 by the bonding force. Thus only the leadframe can be locally heated. A succeeding process for preventing oxidation can be omitted.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体組立装置に関するものである。[Detailed description of the invention] [Industrial application field] The present invention relates to semiconductor assembly equipment.

〔従来の技術〕[Conventional technology]

半導体組立装置には、リードフレームを加熱しつつ該リ
ードフレーム上に半導体素子をダイボンする ディング方式のものがある。2. Description of the Related Art Some semiconductor assembly devices employ a die bonding method in which a semiconductor element is die-bonded onto a lead frame while heating the lead frame.

ム 従来、リードフレームの加熱は一般にヒーターを用いた
抵抗加熱により行なわれていた。Conventionally, lead frames have generally been heated by resistance heating using a heater.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、従来の抵抗加熱では、リードフレームの
加熱を必要とする部分のみに限定して局部的な加熱を行
うことはできず、その周辺もあわせて加熱される。ＩＣ
１特にプラスチックＩＣにおいて、周辺部が加熱される
と、リードフレーム表面全体の酸化を引き起し、後工程
での処理が必要となる。However, with conventional resistance heating, it is not possible to locally heat only the portion of the lead frame that requires heating, and the surrounding area is also heated. IC
1. Particularly in plastic ICs, when the peripheral area is heated, the entire surface of the lead frame is oxidized, necessitating post-process treatment.

本発明は前記問題点を解消するもので、リードフレーム
に対し加熱を必要とする部分にのみ局部的に加熱を行う
装置を提供するものである。The present invention solves the above problems and provides an apparatus that locally heats only the portions of the lead frame that require heating.

〔問題点を解決するための手段〕[Means for solving problems]

本発明はリードフレームを加熱しつつ該リードフレーム
上に半導体素子をダイボンディングする半導体組立装置
において、ギャップを備えたコア［巻線を捲回し、該コ
アのギャップをリードフレームの加熱部分に接近させて
配設し、かつ前記巻線を高周波発振器に接続したことを
特徴とする半導体組立装置である。The present invention provides a semiconductor assembly apparatus for die-bonding a semiconductor element onto a lead frame while heating the lead frame. The semiconductor assembly apparatus is characterized in that the winding is arranged in the same manner as the winding and the winding is connected to a high frequency oscillator.

〔実施例〕〔Example〕

以下、本発明の一実施例を図によって説明する。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

第１図は本発明を、熱硬化性エポキシ・ペーストによる
ダイボンディング装置に適用した場合の例を示すもので
ある。図において、ギャップ４を備えたコア３に巻線２
を捲回し、該コア３のギャップ４にリードフレーム５の
加熱を必要とする部分に接近させて配設し、かつ巻線２
を高周波発振器１に接続する。FIG. 1 shows an example in which the present invention is applied to a die bonding device using thermosetting epoxy paste. In the figure, a winding 2 is placed on a core 3 with a gap 4.
The winding 2 is arranged in the gap 4 of the core 3 close to the part of the lead frame 5 that requires heating.
is connected to the high frequency oscillator 1.

実施例において、半導体素子６をリードフレーム５上に
ダイポンディングするには、リードフレーム５の加熱部
分をコア３のギヤツブ４正面に近接して対面させる。高
周波発振器１からの電流が巻線２に流れると、ギャップ
４を含めたコア３内に磁束が通り、ギャップ４に発生し
た高周波磁界はリードフレーム５の半導体素子載置部分
７に誘導電流を誘起し、これによって、載置部分７のみ
がスポット加熱されて熱硬化性エポキシペースト８が溶
解し、その接着力にて半導体素子６をリードフレーム５
上の載置部分７に接合する。In the embodiment, in order to die-bond the semiconductor element 6 onto the lead frame 5, the heated portion of the lead frame 5 is placed close to and facing the front surface of the gear 4 of the core 3. When the current from the high-frequency oscillator 1 flows through the winding 2, magnetic flux passes through the core 3 including the gap 4, and the high-frequency magnetic field generated in the gap 4 induces an induced current in the semiconductor element mounting portion 7 of the lead frame 5. As a result, only the mounting portion 7 is spot-heated, the thermosetting epoxy paste 8 is melted, and the semiconductor element 6 is attached to the lead frame 5 by its adhesive force.
It is joined to the upper mounting portion 7.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明はコアのギャップにリード
フレームの加熱を必要とする部分を接近させて配置し、
ギャップ内に発生させた高周波磁界によって加熱部分に
誘導電流を誘起させることによシスポット加熱するよう
にしたので、コアのギャップの長さ範囲に加熱部分が限
定され、リードフレームのみを局部的に加熱することが
でき、これによって従来必須とされていた酸化防止の後
工程が不要となり、製造ラインを簡素化し、しかもリー
ドフレームに限って加熱されるため、装置自体が加熱さ
れず、装置の熱対策に対する要求を緩和できる効果を有
するものである。As explained above, the present invention arranges the part of the lead frame that requires heating close to the gap of the core,
The high-frequency magnetic field generated within the gap induces an induced current in the heated part to perform sispot heating, so the heated part is limited to the length of the core gap, and only the lead frame can be heated locally. This eliminates the need for post-processes to prevent oxidation, which was previously considered essential, and simplifies the production line.Furthermore, since only the lead frame is heated, the device itself is not heated, and the heat of the device is reduced. This has the effect of easing demands for countermeasures.

【図面の簡単な説明】[Brief explanation of the drawing]

第一図は本発明の一実施例を示す縦断面図である。 １・・・高周波発振器、２・・・巻線、３・・・コア、
４・・・ギャップ、５・・・リードフレーム、６・・・
半導体素子、７・・・リードフレームの半導体素子載置
部分、８・・・熱硬化性エポキシペースト。FIG. 1 is a longitudinal sectional view showing an embodiment of the present invention. 1... High frequency oscillator, 2... Winding wire, 3... Core,
4... Gap, 5... Lead frame, 6...
Semiconductor element, 7... Semiconductor element mounting portion of lead frame, 8... Thermosetting epoxy paste.

Claims (1)

【特許請求の範囲】[Claims] （１）リードフレームを加熱しつつ該リードフレーム上
に半導体素子をダイボンディングする半導体組立装置に
おいて、ギャップを備えたコアに巻線を捲回し、該コア
のギャップをリードフレームの加熱部分に接近させて配
設し、かつ前記巻線を高周波発振器に接続したことを特
徴とする半導体組立装置。(1) In a semiconductor assembly device that performs die bonding of a semiconductor element onto a lead frame while heating the lead frame, a winding is wound around a core provided with a gap, and the gap in the core is brought close to the heated portion of the lead frame. 1. A semiconductor assembly device, characterized in that the winding is connected to a high frequency oscillator.
JP60052742A 1985-03-15 1985-03-15 Semiconductor assembling device Pending JPS61210643A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60052742A JPS61210643A (en) 1985-03-15 1985-03-15 Semiconductor assembling device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60052742A JPS61210643A (en) 1985-03-15 1985-03-15 Semiconductor assembling device

Publications (1)

Publication Number Publication Date
JPS61210643A true JPS61210643A (en) 1986-09-18

Family

ID=12923374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60052742A Pending JPS61210643A (en) 1985-03-15 1985-03-15 Semiconductor assembling device

Country Status (1)

Country Link
JP (1) JPS61210643A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5558795A (en) * 1989-10-31 1996-09-24 International Business Machines Corporation Module encapsulation by induction heating
JP2007335836A (en) * 2006-05-19 2007-12-27 Hitachi Chem Co Ltd Method of curing resin paste for die bonding and die bonding method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5558795A (en) * 1989-10-31 1996-09-24 International Business Machines Corporation Module encapsulation by induction heating
JP2007335836A (en) * 2006-05-19 2007-12-27 Hitachi Chem Co Ltd Method of curing resin paste for die bonding and die bonding method

Similar Documents

Publication Publication Date Title
US5523617A (en) Fuse frames, programmable fuse frames, and methods for programming by fusing
JPS61210643A (en) Semiconductor assembling device
JPS58207645A (en) Semiconductor device
JPH0621134A (en) Semiconductor device and manufacture thereof
JP2859220B2 (en) Lead frame and method of manufacturing semiconductor device using the same
JPH02137250A (en) Manufacture of semiconductor device and semiconductor device
JPS60160624A (en) Dielectric isolation for semiconductor chip
JP2000260826A (en) Heater for mounting semiconductor chip
JP2703145B2 (en) IC chip bonding method for TAB film carrier
JPH06120406A (en) Semiconductor device
JPS6081850A (en) Manufacture of semiconductor device
JPH05259218A (en) Bonder
JP3055581B2 (en) Semiconductor device
JP2663860B2 (en) Resin-sealed semiconductor device
JPH07211850A (en) Semiconductor device
JPH10229160A (en) Manufacture of semiconductor device
JPS6319791A (en) Electric source for magnetron
KR970007846B1 (en) Past device type semiconductor package
JPS6122462B2 (en)
JP2970115B2 (en) Semiconductor manufacturing method
JP3525965B2 (en) Lead frame, method of manufacturing the same, and semiconductor element package using the same
JPH06120407A (en) Semiconductor device
JPH0465158A (en) Manufacture of semiconductor device
JPS6334908A (en) Rotary transformer
JPH05211196A (en) Wire bonding apparatus