JPH05259218A - Bonder - Google Patents
BonderInfo
- Publication number
- JPH05259218A JPH05259218A JP5148392A JP5148392A JPH05259218A JP H05259218 A JPH05259218 A JP H05259218A JP 5148392 A JP5148392 A JP 5148392A JP 5148392 A JP5148392 A JP 5148392A JP H05259218 A JPH05259218 A JP H05259218A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- bonding tool
- coil
- tool
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
- B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
- B29C65/18—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using heated tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
- B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
- B29C65/18—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using heated tools
- B29C65/24—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using heated tools characterised by the means for heating the tool
- B29C65/30—Electrical means
- B29C65/32—Induction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C66/00—General aspects of processes or apparatus for joining preformed parts
- B29C66/80—General aspects of machine operations or constructions and parts thereof
- B29C66/83—General aspects of machine operations or constructions and parts thereof characterised by the movement of the joining or pressing tools
- B29C66/832—Reciprocating joining or pressing tools
- B29C66/8322—Joining or pressing tools reciprocating along one axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75264—Means for applying energy, e.g. heating means by induction heating, i.e. coils
- H01L2224/75266—Means for applying energy, e.g. heating means by induction heating, i.e. coils in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/8122—Applying energy for connecting with energy being in the form of electromagnetic radiation
- H01L2224/81222—Induction heating, i.e. eddy currents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、フィルムキャリアに
形成されたインナ−リ−ドと半導体チップの電極パッド
とを加熱加圧により接合するボンディング装置に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding apparatus for bonding an inner lead formed on a film carrier and an electrode pad of a semiconductor chip by heating and pressing.
【０００２】[0002]
【従来の技術】例えば、ＴＡＢ（Tape Automated Bonnd
ing ）の技術においては、図４（ａ）に示すように、フ
ィルムキャリア１のデバイスホ−ル１ａ内に突設された
複数のリ−ド２…と、半導体チップ３の各電極パッド４
…とを接続（ボンディング）する工程がある。このよう
なボンディングをインナ−リ−ドボンディングという。
このインナ−リ−ドボンディングを行うボンディング装
置として、第１に図４（ａ）に示す装置がある。2. Description of the Related Art For example, TAB (Tape Automated Bonnd)
4 (a), a plurality of leads 2 ... Protruded in the device hole 1a of the film carrier 1 and each electrode pad 4 of the semiconductor chip 3 are used in the technique of FIG.
There is a step of connecting (bonding) with. Such bonding is called inner lead bonding.
As a bonding apparatus for performing this inner lead bonding, there is a first apparatus shown in FIG. 4 (a).
【０００３】このボンディング装置は、上記フィルムキ
ャリア１の全てのリ−ド２…を半導体チップ３の各電極
パッド４に一括的に加圧可能な加圧面を有するボンディ
ングツ−ル５を具備する。このボンディングツ−ル５は
図示しない上下駆動手段に保持され、図に矢印で示すよ
うに上下方向に駆動される。This bonding apparatus comprises a bonding tool 5 having a pressing surface capable of collectively pressing all the leads 2 of the film carrier 1 to the electrode pads 4 of the semiconductor chip 3. The bonding tool 5 is held by vertical drive means (not shown) and is driven in the vertical direction as shown by the arrow in the figure.
【０００４】このボンディングツ−ル５には、ニクロム
線等が内装されたカ−トリッジヒ−タ６が挿入されてい
る。そしてこのカ−トリッジヒ−タ６は温度制御装置７
に接続され、このボンディングツ−ル５を所定の温度に
加熱し保温するようになっている。A cartridge heater 6 in which a nichrome wire or the like is incorporated is inserted into the bonding tool 5. The cartridge heater 6 is a temperature controller 7
The bonding tool 5 is heated to a predetermined temperature and kept warm.
【０００５】すなわち、このボンディングツ−ル５は、
上記カ−トリッジヒ−タ６が作動することで所定の温度
に加熱され、かつ下方向に駆動されることで上記リ−ド
２を半導体チップ３の電極パッド４に押し付けこのリ−
ド２と電極パッド４とを熱圧着する。That is, the bonding tool 5 is
When the cartridge heater 6 is operated, the cartridge heater 6 is heated to a predetermined temperature and is driven downward to press the lead 2 against the electrode pad 4 of the semiconductor chip 3.
The electrode 2 and the electrode pad 4 are thermocompression bonded.
【０００６】上記ボンディング装置の第２の例として図
４（ｂ）に示す装置がある。この装置は、ヒ−タである
と共にリ−ドを押圧するツ−ルとしての機能を有するボ
ンディングツ−ル８を有する。このボンディングツ−ル
８は、モリブデンなどの部材により成形された応答性の
良いパルスヒ−タ方式のもので、上記フィルムキャリア
１のリ−ド２のうち一列に並んだ複数のリ−ド２を加圧
可能な帯状の加圧面を有するＵ字状の薄板である。As a second example of the above-mentioned bonding apparatus, there is an apparatus shown in FIG. 4 (b). This device has a bonding tool 8 which is a heater and has a function as a tool for pressing a lead. The bonding tool 8 is a pulse heater type having a high response formed by a member such as molybdenum, and is composed of a plurality of leads 2 of the leads 2 of the film carrier 1 arranged in a line. It is a U-shaped thin plate having a band-shaped pressing surface that can be pressed.
【０００７】そして、このボンディングツ−ル８は、図
示しない上下駆動手段により上下方向に駆動されると共
に、Ｕ字の両端部はそれぞれパルス電源１０に接続され
ている。The bonding tool 8 is vertically driven by a vertical driving means (not shown), and both ends of the U-shape are connected to the pulse power source 10.
【０００８】すなわち、このボンディングツ−ル８は下
端面で上記リ−ド２を上記半導体チップ３の電極パッド
４に押し付けつつ、上記パルス電源１０がＯＮされるこ
とで瞬間的に発熱し、上記加圧面で上記リ−ド２と上記
電極パッド４とを熱圧着する。That is, the bonding tool 8 pushes the lead 2 against the electrode pad 4 of the semiconductor chip 3 at the lower end surface thereof, and when the pulse power supply 10 is turned on, heat is generated instantaneously. The lead 2 and the electrode pad 4 are thermocompression-bonded on the pressing surface.
【０００９】[0009]
【発明が解決しようとする課題】ところで、図４（ａ）
に示すボンディング装置の場合、上記カ−トリッジヒ−
タ６は強度等の問題から上記ボンディングツ−ル５の大
きさに対して比較的小さなものしか装着することができ
ない。このため任意の温度まで素早く加熱することがで
きないとともに冷却にも時間がかかるということがあ
る。By the way, FIG. 4 (a)
In the case of the bonding apparatus shown in (1), the cartridge
Due to the problem of strength and the like, only a relatively small tool 6 can be mounted with respect to the size of the bonding tool 5. Therefore, it may not be possible to quickly heat to an arbitrary temperature and it may take time to cool.
【００１０】例えば、上記リ−ド２と電極パッド４とを
ハンダを介して接合するハンダ接合の場合、接合時には
ハンダを溶融するために高温にする必要があり、その後
はハンダが冷えて固まるまでボンディングツ−ル５で押
圧していることが必要である。そして、次の半導体チッ
プ３をボンディングするためには再び所定の高温に加熱
されなければならない。このようなハンダ接合に図４
（ａ）に示すボンディング装置を用いると、サイクルタ
イムが長くなるために著しく生産性が低下することがあ
る。For example, in the case of solder joining in which the lead 2 and the electrode pad 4 are joined via solder, it is necessary to raise the temperature to melt the solder at the time of joining, and thereafter, until the solder cools and solidifies. It is necessary to press with the bonding tool 5. Then, in order to bond the next semiconductor chip 3, it has to be heated again to a predetermined high temperature. Fig. 4
When the bonding apparatus shown in (a) is used, the cycle time becomes long and the productivity may be significantly reduced.
【００１１】また、図４（ｂ）に示すボンディング装置
は上記ボンディングツ−ル８自体が発熱するため応答性
はよいが、材質および形状が限定されるために、磨耗し
たり破損しやすいと共にボンディングする半導体チップ
３の種類がかわった時には対応しずらいということがあ
る。The bonding apparatus shown in FIG. 4 (b) has good responsiveness because the bonding tool 8 itself generates heat, but its material and shape are limited, so that it is easily worn or damaged and bonded. When the type of the semiconductor chip 3 to be changed is changed, it may be difficult to deal with it.
【００１２】さらに、図４（ａ）、（ｂ）に示すボンデ
ィングツ−ル５、８は共に、温度制御装置７およびパル
ス電源１０との間に導線が配線されているため、上記ボ
ンディングツ−ル５、８の動きによってこの配線が破損
したりしやすいということがある。Further, in the bonding tools 5 and 8 shown in FIGS. 4 (a) and 4 (b), conductor wires are wired between the temperature control device 7 and the pulse power source 10, so that the bonding tools described above are provided. There is a case that the wiring is easily damaged by the movement of the rulers 5 and 8.
【００１３】この発明はこのような事情に鑑みて成され
たもので、温度応答性が良くかつ破損やボンディングツ
−ルの磨耗が少ないボンディング装置を提供することを
目的とするものである。The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a bonding apparatus having good temperature responsiveness and less damage and abrasion of the bonding tool.
【００１４】[0014]
【課題を解決するための手段】この発明は、高周波電流
を発生する電源と、この電源に接続され、高周波電流が
印加されることで交流磁場を発生するコイルと、上記コ
イルの近傍に設けられ、上記交流磁場により誘導加熱さ
れるボンディングツ−ルとを具備することを特徴とするAccording to the present invention, there is provided a power source which generates a high frequency current, a coil which is connected to the power source and which generates an alternating magnetic field when a high frequency current is applied, and a coil provided in the vicinity of the coil. And a bonding tool that is induction-heated by the AC magnetic field.
【００１５】[0015]
【作用】このような構成によれば、上記ボンディングツ
−ルは、誘導加熱により応答性良く加熱される。With this structure, the bonding tool is heated with good response by induction heating.
【００１６】[0016]
【実施例】以下、この発明の一実施例を図１を参照して
説明する。なお、従来例と同一の構成要素には同一符号
を付してその説明は省略する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG. The same components as those of the conventional example are designated by the same reference numerals and the description thereof will be omitted.
【００１７】図１に示すのはこの発明のボンディング装
置である。同図中１５はボンディングツ−ルである。こ
のボンディングツ−ル１５は金属で形成され、上記フィ
ルムキャリア１のデバイスホ−ル１ａ内に突出するすべ
てのリ−ド２…を上記半導体チップ３のすべての電極パ
ッド４…に対して一括的に押圧する押圧面１５ａを有す
る。また、このボンディングツ−ル１５は磁性体であ
る。FIG. 1 shows a bonding apparatus of the present invention. Reference numeral 15 in the figure is a bonding tool. The bonding tool 15 is made of metal, and all the leads 2 protruding into the device hole 1a of the film carrier 1 are collectively attached to all the electrode pads 4 of the semiconductor chip 3. It has a pressing surface 15a for pressing. The bonding tool 15 is a magnetic material.
【００１８】また、このボンディングツ−ル１５は上端
部を図示しない上下駆動手段に保持され、上下方向に駆
動される。また、このボンディングツ−ル１５が下降し
た時にこのボンディングツ−ル１５の側壁に対向する位
置には、コイル１６が設けられている。このコイル１６
は、このコイル１６に高周波電流を印加する高周波電源
１７に接続されている。次に、このボンディング装置の
動作を説明する。The upper end of the bonding tool 15 is held by vertical driving means (not shown) and is driven in the vertical direction. A coil 16 is provided at a position facing the side wall of the bonding tool 15 when the bonding tool 15 descends. This coil 16
Is connected to a high frequency power supply 17 that applies a high frequency current to the coil 16. Next, the operation of this bonding apparatus will be described.
【００１９】フィルムキャリア１は、図に矢印（イ）で
示す方向に、間欠送り駆動される。また、上記ボンディ
ングツ−ル１５の，このフィルムキャリア１を挟んで対
向する下側にはボンディングステ−ジ１８が設けられ、
このボンディングステ−ジ１１の上面には、半導体チッ
プ３が電極パッド４…が設けられた面を上方に向けて保
持されている。The film carrier 1 is driven intermittently in the direction shown by the arrow (a) in the figure. A bonding stage 18 is provided on the lower side of the bonding tool 15 which faces the film carrier 1 with the film carrier 1 interposed therebetween.
The semiconductor chip 3 is held on the upper surface of the bonding stage 11 with the surface on which the electrode pads 4 ... Are provided facing upward.
【００２０】この半導体チップ３の上方に上記デバイス
ホ−ル１ａが間欠的に駆動され位置決めされると、上記
ボンディングステ−ジ１８は上昇駆動される。ついで上
記ボンディングツ−ル１５が下降駆動され、加圧面１５
ａを上記リ−ド２の上面に当接させ、このリ−ド２を上
記半導体チップ３の電極パッド４に押圧する。When the device hole 1a is intermittently driven and positioned above the semiconductor chip 3, the bonding stage 18 is driven upward. Then, the bonding tool 15 is driven downward, and the pressing surface 15
a is brought into contact with the upper surface of the lead 2 and the lead 2 is pressed against the electrode pad 4 of the semiconductor chip 3.
【００２１】このとき、上記高周波電源１７が作動し、
上記コイル１６に高周波電流を印加する。このことで、
上記ボンディングツ−ル１５の回りには交流磁場が生じ
る。At this time, the high frequency power source 17 operates,
A high frequency current is applied to the coil 16. With this,
An alternating magnetic field is generated around the bonding tool 15.
【００２２】このことでこのボンディングツ−ル１５は
誘導加熱される。すなわち、上記交流磁場により上記ボ
ンディングツ−ル１５内には渦電流が流れ、渦電流損失
が生じる。また、このボンディングツ−ル１５は磁性体
であるので、ヒステリシス損失も生じる。これらの損失
が熱エネルギに変換され上記ボンディングツ−ル１５は
応答性良く加熱される。このボンディングツ−ル１５が
所定の温度に加熱されることで、上記各リ−ド２と電極
パッド４は有効に接合される。As a result, the bonding tool 15 is induction-heated. That is, an eddy current flows in the bonding tool 15 due to the AC magnetic field, causing an eddy current loss. Further, since the bonding tool 15 is a magnetic material, hysteresis loss also occurs. These losses are converted into heat energy and the bonding tool 15 is heated with good response. By heating the bonding tool 15 to a predetermined temperature, the leads 2 and the electrode pads 4 are effectively bonded.
【００２３】このような構成によれば、上記ボンディン
グツ−ル１５を誘導加熱の特性により応答性良く有効に
加熱することができるので、ハンダ接合の場合であって
も良好なボンディングを行うことが可能である。According to this structure, the bonding tool 15 can be effectively heated with good responsiveness due to the characteristics of induction heating, so that good bonding can be performed even in the case of soldering. It is possible.
【００２４】また、このボンディングツ−ル１５は従来
例と異なり、ボンディングツ−ル内にカ−トリッジヒ−
タを設けたりこのボンディングツ−ル自体が発熱するも
のではない。したがって、配線もいらず上下動作による
配線の破損は生じないので故障のおそれが少なくなる。
また、上記ボンディングツ−ル１５の材料や形状の自由
度が高まるので加圧面が磨耗したりすることが低減され
る。Unlike the conventional example, this bonding tool 15 has a cartridge tool inside the bonding tool.
The bonding tool itself does not generate heat. Therefore, the wiring is not required and the wiring is not damaged by the vertical movement, so that the risk of failure is reduced.
Further, since the degree of freedom in the material and shape of the bonding tool 15 is increased, abrasion of the pressing surface is reduced.
【００２５】さらに、このようなボンディング装置で
は、ボンディングする半導体チップの種類がかわり、上
記ボンディングツ−ルのサイズを変更した場合でも、配
線をしなおす必要がないので作業効率も向上する。な
お、この発明は上記一実施例に限定されるものではな
く、発明の要旨を変更しない範囲で種々変形可能であ
る。Further, in such a bonding apparatus, even if the type of the semiconductor chip to be bonded is changed and the size of the bonding tool is changed, it is not necessary to rewiring, so that the working efficiency is improved. It should be noted that the present invention is not limited to the above-described embodiment, but can be variously modified without changing the gist of the invention.
【００２６】たとえば上記一実施例では、上記ボンディ
ングツ−ル１５の側面に対向するように上記コイル１６
を設けていたが、これに限定されるものではなく、例え
ば図２に示すように、上記ボンディングツ−ル１５の径
方向外側に、このボンディングツ−ル１５を旋回するコ
イル１６´を設けるようにしてもよい。For example, in the above-described embodiment, the coil 16 is arranged so as to face the side surface of the bonding tool 15.
However, the present invention is not limited to this. For example, as shown in FIG. 2, a coil 16 'for turning the bonding tool 15 may be provided on the outside in the radial direction of the bonding tool 15. You can
【００２７】この場合でも上記ボンディングツ−ル１５
の回りには交流磁場が生じるのでこのボンディングツ−
ル１５内には渦電流損失およびヒステリシス損失が生
じ、このボンディングツ−ル１５は誘導加熱される。Even in this case, the bonding tool 15 is also used.
AC magnetic field is generated around the
Eddy current loss and hysteresis loss occur in the tool 15, and the bonding tool 15 is heated by induction.
【００２８】また、上記一実施例では、ボンディング装
置として、インナ−リ−ドボンディング装置を挙げた
が、他の例えばアウタリ−ドボンディング装置であって
もよい。要はボンディングツ−ルを加熱する必要がある
ボンディング装置であればよい。In the above embodiment, the inner lead bonding device is used as the bonding device. However, another bonding device such as an outer lead bonding device may be used. The point is that any bonding device that needs to heat the bonding tool may be used.
【００２９】さらに、上記一実施例では、上記リ−ド２
と電極パッド４を一括的に接合するいわゆるギャングボ
ンディング方式のボンディングツ−ル１５を有するボン
ディング装置であったが、これに限定されるものではな
く、図３（ａ）、（ｂ）に示すように、ボンディングツ
−ルとして針状のキャピラリ２０を有し、このキャピラ
リ２０で上記リ−ド２と電極パッド４とを一組づつ個別
に接続するシングルポイントボンディング方式のボンデ
ィング装置に適用するようにしても良い。Further, in the above embodiment, the lead 2 is used.
The bonding device has a so-called gang bonding type bonding tool 15 for collectively bonding the electrode pad 4 and the electrode pad 4 together, but is not limited to this, and as shown in FIGS. 3 (a) and 3 (b). In addition, it has a needle-like capillary 20 as a bonding tool, and is applied to a single point bonding type bonding apparatus in which the lead 2 and the electrode pad 4 are individually connected by the capillary 20. May be.
【００３０】この場合でも、図３（ａ）に示すように、
針状のキャピラリ２０の側方にコイル２１を設けるかま
たは、図３（ｂ）に示すようにこのキャピラリ２０を旋
回するコイル２１´を設けるようにして上記キャピラリ
２０を交流磁場内に置くようにすれば同様の効果を得る
ことができる。Even in this case, as shown in FIG.
A coil 21 is provided on the side of the needle-shaped capillary 20, or a coil 21 'for rotating the capillary 20 is provided as shown in FIG. 3B so that the capillary 20 is placed in an alternating magnetic field. Then, the same effect can be obtained.
【００３１】このシングルポイントボンディングのキャ
ピラリ２０の場合は、従来このキャピラリ２０が針状で
小さいため加熱することが困難であった。したがって、
このような誘導加熱方式は特に有効である。In the case of this single-point bonding capillary 20, it has been difficult to heat the capillary 20 because it is needle-like and small in the related art. Therefore,
Such an induction heating method is particularly effective.
【００３２】[0032]
【発明の効果】以上述べたように、この発明のボンディ
ング装置は、高周波電流を発生する電源と、この電源に
接続され、高周波電流が印加されることで交流磁場を発
生するコイルと、上記コイルの近傍に設けられ、上記交
流磁場により誘導加熱されるボンディングツ−ルとを具
備するものである。As described above, the bonding apparatus of the present invention includes a power source for generating a high frequency current, a coil connected to the power source for generating an alternating magnetic field when a high frequency current is applied, and the coil. And a bonding tool which is provided in the vicinity of and is induction-heated by the AC magnetic field.
【００３３】このような構成によれば、ボンディングツ
−ル内にヒ−タを設けることなくこのボンディングツ−
ルを加熱することができるので配線の破損がない。ま
た、誘導加熱の特性によりボンディングツ−ルを応答性
良く加熱することができる効果がある。According to this structure, the bonding tool is not provided in the bonding tool.
The wiring can be heated so there is no damage to the wiring. Further, there is an effect that the bonding tool can be heated with good response due to the characteristic of induction heating.
【図面の簡単な説明】[Brief description of drawings]
【図１】この発明の一実施例を示す概略正面図。FIG. 1 is a schematic front view showing an embodiment of the present invention.
【図２】同じく、他の実施例を示す概略正面図。FIG. 2 is likewise a schematic front view showing another embodiment.
【図３】（ａ）、（ｂ）は同じく他の実施例を示す概略
正面図。3 (a) and 3 (b) are schematic front views showing another embodiment.
【図４】（ａ）、（ｂ）は従来例を示す概略正面図。4A and 4B are schematic front views showing a conventional example.
１５…ボンディングツ−ル、１６…コイル、１７…高周
波電源。15 ... Bonding tool, 16 ... Coil, 17 ... High frequency power source.
Claims (1)
に接続され、高周波電流が印加されることで交流磁場を
発生するコイルと、上記コイルの近傍に設けられ、上記
交流磁場により誘導加熱されるボンディングツ−ルとを
具備することを特徴とするボンディング装置。1. A power supply that generates a high-frequency current, a coil that is connected to this power supply and that generates an AC magnetic field when a high-frequency current is applied, and a coil that is provided in the vicinity of the coil and is induction-heated by the AC magnetic field. A bonding device comprising a bonding tool.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5148392A JPH05259218A (en) | 1992-03-10 | 1992-03-10 | Bonder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5148392A JPH05259218A (en) | 1992-03-10 | 1992-03-10 | Bonder |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05259218A true JPH05259218A (en) | 1993-10-08 |
Family
ID=12888206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5148392A Pending JPH05259218A (en) | 1992-03-10 | 1992-03-10 | Bonder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05259218A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6134428A (en) * | 1995-11-06 | 2000-10-17 | Seiko Epson Corporation | Wrist mounted communicator |
-
1992
- 1992-03-10 JP JP5148392A patent/JPH05259218A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6134428A (en) * | 1995-11-06 | 2000-10-17 | Seiko Epson Corporation | Wrist mounted communicator |
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