JPS61203680A - Ｍｉｓ型半導体装置 - Google Patents

Ｍｉｓ型半導体装置

Info

Publication number
JPS61203680A
JPS61203680A JP60044319A JP4431985A JPS61203680A JP S61203680 A JPS61203680 A JP S61203680A JP 60044319 A JP60044319 A JP 60044319A JP 4431985 A JP4431985 A JP 4431985A JP S61203680 A JPS61203680 A JP S61203680A
Authority
JP
Japan
Prior art keywords
type semiconductor
region
input terminal
transistor
mis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60044319A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0440868B2 (enrdf_load_stackoverflow
Inventor
Kazuhito Misu
三須　一仁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60044319A priority Critical patent/JPS61203680A/ja
Publication of JPS61203680A publication Critical patent/JPS61203680A/ja
Publication of JPH0440868B2 publication Critical patent/JPH0440868B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
JP60044319A 1985-03-06 1985-03-06 Ｍｉｓ型半導体装置 Granted JPS61203680A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60044319A JPS61203680A (ja) 1985-03-06 1985-03-06 Ｍｉｓ型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60044319A JPS61203680A (ja) 1985-03-06 1985-03-06 Ｍｉｓ型半導体装置

Publications (2)

Publication Number Publication Date
JPS61203680A true JPS61203680A (ja) 1986-09-09
JPH0440868B2 JPH0440868B2 (enrdf_load_stackoverflow) 1992-07-06

Family

ID=12688163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60044319A Granted JPS61203680A (ja) 1985-03-06 1985-03-06 Ｍｉｓ型半導体装置

Country Status (1)

Country Link
JP (1) JPS61203680A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02312277A (ja) * 1989-05-26 1990-12-27 Fujitsu Ltd 半導体入力保護装置
US8672098B2 (en) 2008-10-20 2014-03-18 Fujitec Co., Ltd. Elevator safety device with foreign matter detection using a light beam

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02312277A (ja) * 1989-05-26 1990-12-27 Fujitsu Ltd 半導体入力保護装置
US8672098B2 (en) 2008-10-20 2014-03-18 Fujitec Co., Ltd. Elevator safety device with foreign matter detection using a light beam

Also Published As

Publication number Publication date
JPH0440868B2 (enrdf_load_stackoverflow) 1992-07-06

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