JPS6120132B2 - - Google Patents
Info
- Publication number
- JPS6120132B2 JPS6120132B2 JP53101922A JP10192278A JPS6120132B2 JP S6120132 B2 JPS6120132 B2 JP S6120132B2 JP 53101922 A JP53101922 A JP 53101922A JP 10192278 A JP10192278 A JP 10192278A JP S6120132 B2 JPS6120132 B2 JP S6120132B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- glass
- semiconductor
- method characterized
- semiconductor material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3178—Coating or filling in grooves made in the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H01L21/02145—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2739762A DE2739762C2 (de) | 1977-09-03 | 1977-09-03 | Verfahren zur Passivierung von Halbleiterkörpern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5444476A JPS5444476A (en) | 1979-04-07 |
| JPS6120132B2 true JPS6120132B2 (en, 2012) | 1986-05-21 |
Family
ID=6018047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10192278A Granted JPS5444476A (en) | 1977-09-03 | 1978-08-23 | Method of stably surface treating semiconductor |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4202916A (en, 2012) |
| JP (1) | JPS5444476A (en, 2012) |
| BR (1) | BR7805571A (en, 2012) |
| CH (1) | CH631291A5 (en, 2012) |
| DE (1) | DE2739762C2 (en, 2012) |
| FR (1) | FR2402303A1 (en, 2012) |
| GB (1) | GB2003662B (en, 2012) |
| IT (1) | IT1098444B (en, 2012) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2071411B (en) * | 1980-03-07 | 1983-12-21 | Philips Electronic Associated | Passivating p-n junction devices |
| IN154896B (en, 2012) * | 1980-07-10 | 1984-12-22 | Westinghouse Electric Corp | |
| JPS57120341A (en) * | 1981-01-17 | 1982-07-27 | Toshiba Corp | Glass passivation semiconductor device |
| US4506435A (en) * | 1981-07-27 | 1985-03-26 | International Business Machines Corporation | Method for forming recessed isolated regions |
| US4544576A (en) * | 1981-07-27 | 1985-10-01 | International Business Machines Corporation | Deep dielectric isolation by fused glass |
| DE3247938A1 (de) * | 1982-12-24 | 1984-07-05 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Halbleiterbauelement hoher sperrspannungsbelastbarkeit |
| US4515668A (en) * | 1984-04-25 | 1985-05-07 | Honeywell Inc. | Method of forming a dielectric layer comprising a gettering material |
| FR2631488B1 (fr) * | 1988-05-10 | 1990-07-27 | Thomson Hybrides Microondes | Circuit integre hyperfrequence de type planar, comportant au moins un composant mesa, et son procede de fabrication |
| US5176771A (en) * | 1991-12-23 | 1993-01-05 | Hughes Aircraft Company | Multilayer ceramic tape substrate having cavities formed in the upper layer thereof and method of fabricating the same by printing and delamination |
| US5882986A (en) * | 1998-03-30 | 1999-03-16 | General Semiconductor, Inc. | Semiconductor chips having a mesa structure provided by sawing |
| US20030066816A1 (en) * | 2001-09-17 | 2003-04-10 | Schultz Gary A. | Uniform patterning for deep reactive ion etching |
| DE102006013076A1 (de) * | 2006-03-22 | 2007-09-27 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleiterbauelement mit Passivierungsschicht und zugehöriges Herstellungsverfahren |
| US8163624B2 (en) * | 2008-07-30 | 2012-04-24 | Bowman Ronald R | Discrete semiconductor device and method of forming sealed trench junction termination |
| US20100025809A1 (en) | 2008-07-30 | 2010-02-04 | Trion Technology, Inc. | Integrated Circuit and Method of Forming Sealed Trench Junction Termination |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1522201A (fr) * | 1961-07-06 | 1968-04-26 | Procédé de fabrication de dispositifs semi-conducteurs à jonction | |
| US3303399A (en) * | 1964-01-30 | 1967-02-07 | Ibm | Glasses for encapsulating semiconductor devices and resultant devices |
| US3546013A (en) * | 1961-09-29 | 1970-12-08 | Ibm | Method of providing protective coverings for semiconductors |
| US3212921A (en) * | 1961-09-29 | 1965-10-19 | Ibm | Method of forming a glass film on an object and the product produced thereby |
| DE1260574B (de) * | 1966-03-30 | 1968-02-08 | Telefunken Patent | Verfahren zur Herstellung von Glasschichten oder anderen Isolierschichten auf Substratoberflaechen |
| US3542572A (en) * | 1968-06-24 | 1970-11-24 | Corning Glass Works | Germania-silica glasses |
| US3967310A (en) * | 1968-10-09 | 1976-06-29 | Hitachi, Ltd. | Semiconductor device having controlled surface charges by passivation films formed thereon |
| DE1950780B2 (de) * | 1968-10-09 | 1971-09-30 | Halbleiteranordnung mit reduzierter oberflaechenladungs dichte | |
| US3632434A (en) * | 1969-01-21 | 1972-01-04 | Jerald L Hutson | Process for glass passivating silicon semiconductor junctions |
| GB1250099A (en, 2012) * | 1969-04-14 | 1971-10-20 | ||
| US3752701A (en) * | 1970-07-27 | 1973-08-14 | Gen Instrument Corp | Glass for coating semiconductors, and semiconductor coated therewith |
| US3895127A (en) * | 1974-04-19 | 1975-07-15 | Rca Corp | Method of selectively depositing glass on semiconductor devices |
| DE2548736C3 (de) * | 1975-10-31 | 1978-05-18 | Jenaer Glaswerk Schott & Gen., 6500 Mainz | Composit-Passivierungsglas auf der Basis PbO-B2 Okskö-ab O3) m't einem thermischen Ausdehnungskoeffizienten (200-300 Grad C) zwischen 40 und 60 mal 10"7 / Grad C für Silicium-Halbleiterbauelemente mit Aufschmelztemperaturen von höchstens 600 Grad C |
| JPS5263160A (en) * | 1975-11-20 | 1977-05-25 | Toshitaka Yamagata | Forming device for arc and annulus |
| FR2335951A1 (fr) * | 1975-12-19 | 1977-07-15 | Radiotechnique Compelec | Dispositif semiconducteur a surface passivee et procede d'obtention de la structure de passivation |
| JPS535971A (en) * | 1976-07-06 | 1978-01-19 | Mitsubishi Electric Corp | Semiconductor device |
-
1977
- 1977-09-03 DE DE2739762A patent/DE2739762C2/de not_active Expired
-
1978
- 1978-08-04 CH CH833578A patent/CH631291A5/de not_active IP Right Cessation
- 1978-08-23 JP JP10192278A patent/JPS5444476A/ja active Granted
- 1978-08-25 US US05/936,885 patent/US4202916A/en not_active Expired - Lifetime
- 1978-08-28 BR BR7805571A patent/BR7805571A/pt unknown
- 1978-08-30 FR FR7824993A patent/FR2402303A1/fr active Granted
- 1978-09-01 IT IT27273/78A patent/IT1098444B/it active
- 1978-09-02 GB GB7835420A patent/GB2003662B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2739762A1 (de) | 1979-03-15 |
| FR2402303A1 (fr) | 1979-03-30 |
| JPS5444476A (en) | 1979-04-07 |
| BR7805571A (pt) | 1979-04-10 |
| FR2402303B1 (en, 2012) | 1984-06-01 |
| GB2003662A (en) | 1979-03-14 |
| IT7827273A0 (it) | 1978-09-01 |
| US4202916A (en) | 1980-05-13 |
| IT1098444B (it) | 1985-09-07 |
| DE2739762C2 (de) | 1982-12-02 |
| CH631291A5 (de) | 1982-07-30 |
| GB2003662B (en) | 1982-02-24 |
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