JPS61198783A - 電界効果型半導体装置 - Google Patents

電界効果型半導体装置

Info

Publication number
JPS61198783A
JPS61198783A JP60037432A JP3743285A JPS61198783A JP S61198783 A JPS61198783 A JP S61198783A JP 60037432 A JP60037432 A JP 60037432A JP 3743285 A JP3743285 A JP 3743285A JP S61198783 A JPS61198783 A JP S61198783A
Authority
JP
Japan
Prior art keywords
layer
type
electron
molecular beam
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60037432A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0156542B2 (enrdf_load_stackoverflow
Inventor
Tomonori Ishikawa
石川 知則
Masahiko Sasa
佐々 誠彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP60037432A priority Critical patent/JPS61198783A/ja
Publication of JPS61198783A publication Critical patent/JPS61198783A/ja
Publication of JPH0156542B2 publication Critical patent/JPH0156542B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60Impurity distributions or concentrations
    • H10D62/605Planar doped, e.g. atomic-plane doped or delta-doped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/40FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP60037432A 1985-02-28 1985-02-28 電界効果型半導体装置 Granted JPS61198783A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60037432A JPS61198783A (ja) 1985-02-28 1985-02-28 電界効果型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60037432A JPS61198783A (ja) 1985-02-28 1985-02-28 電界効果型半導体装置

Publications (2)

Publication Number Publication Date
JPS61198783A true JPS61198783A (ja) 1986-09-03
JPH0156542B2 JPH0156542B2 (enrdf_load_stackoverflow) 1989-11-30

Family

ID=12497350

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60037432A Granted JPS61198783A (ja) 1985-02-28 1985-02-28 電界効果型半導体装置

Country Status (1)

Country Link
JP (1) JPS61198783A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0156542B2 (enrdf_load_stackoverflow) 1989-11-30

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term