JPS61198783A - 電界効果型半導体装置 - Google Patents
電界効果型半導体装置Info
- Publication number
- JPS61198783A JPS61198783A JP60037432A JP3743285A JPS61198783A JP S61198783 A JPS61198783 A JP S61198783A JP 60037432 A JP60037432 A JP 60037432A JP 3743285 A JP3743285 A JP 3743285A JP S61198783 A JPS61198783 A JP S61198783A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- electron
- molecular beam
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
- H10D62/605—Planar doped, e.g. atomic-plane doped or delta-doped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
- H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60037432A JPS61198783A (ja) | 1985-02-28 | 1985-02-28 | 電界効果型半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60037432A JPS61198783A (ja) | 1985-02-28 | 1985-02-28 | 電界効果型半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61198783A true JPS61198783A (ja) | 1986-09-03 |
| JPH0156542B2 JPH0156542B2 (enrdf_load_stackoverflow) | 1989-11-30 |
Family
ID=12497350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60037432A Granted JPS61198783A (ja) | 1985-02-28 | 1985-02-28 | 電界効果型半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61198783A (enrdf_load_stackoverflow) |
-
1985
- 1985-02-28 JP JP60037432A patent/JPS61198783A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0156542B2 (enrdf_load_stackoverflow) | 1989-11-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |