JPH0156542B2 - - Google Patents

Info

Publication number
JPH0156542B2
JPH0156542B2 JP60037432A JP3743285A JPH0156542B2 JP H0156542 B2 JPH0156542 B2 JP H0156542B2 JP 60037432 A JP60037432 A JP 60037432A JP 3743285 A JP3743285 A JP 3743285A JP H0156542 B2 JPH0156542 B2 JP H0156542B2
Authority
JP
Japan
Prior art keywords
layer
type
semiconductor
electron
molecular beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60037432A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61198783A (ja
Inventor
Tomonori Ishikawa
Masahiko Sasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP60037432A priority Critical patent/JPS61198783A/ja
Publication of JPS61198783A publication Critical patent/JPS61198783A/ja
Publication of JPH0156542B2 publication Critical patent/JPH0156542B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H10D62/605—Planar doped, e.g. atomic-plane doped or delta-doped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP60037432A 1985-02-28 1985-02-28 電界効果型半導体装置 Granted JPS61198783A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60037432A JPS61198783A (ja) 1985-02-28 1985-02-28 電界効果型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60037432A JPS61198783A (ja) 1985-02-28 1985-02-28 電界効果型半導体装置

Publications (2)

Publication Number Publication Date
JPS61198783A JPS61198783A (ja) 1986-09-03
JPH0156542B2 true JPH0156542B2 (enrdf_load_stackoverflow) 1989-11-30

Family

ID=12497350

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60037432A Granted JPS61198783A (ja) 1985-02-28 1985-02-28 電界効果型半導体装置

Country Status (1)

Country Link
JP (1) JPS61198783A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS61198783A (ja) 1986-09-03

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term