JPS61193464A - Marking method in inspection of semiconductor device - Google Patents

Abstract

PURPOSE:To put a specifically-shaped mark accurately and surely on a defective semiconductor device by a method wherein a pressure-sensitive setting color- developing coating is applied and dried on the upper surface of a semiconductor device and a pressure is applied onto the part of the coating when a defect is found in the device by inspection. CONSTITUTION:A photoresist 10 as a coating which develops a color and sets under a pressure is applied on the upper surface of a semiconductor device except for the part of a window 10a for wire bonding. The photoresist 10 employed herein is prepared by mixing microcapsules packed with a setting agent and a color developer in a liquid of photosensitive synthetic resin such as epoxy. After applied on the whole surface and dried, the photoresist is removed from the parts of windows 9a, 10a and all other similar windows by photoetching. Then, the wafer concerned is set in an inspecting apparatus and subjected to an inspection as to whether it is defective or not, and the part of a semiconductor device determined to be defective is hammered. As the result, the microcapsules are destructed in the hammered part, the setting agent and the color developer inside the capsules ooze out for coloring and set, and thus a mark 11 is formed on said part.

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention is applicable to, for example, when inspecting a plurality of semiconductor devices formed on the same wafer (which become semiconductor chips after being divided).
The present invention relates to a marking method for attaching a mark for sorting when an inspection result is defective.

Semiconductor devices such as integrated circuits are subjected to various inspections during the production process (prior art), and one type of inspection is to simultaneously inspect a single wafer on which multiple semiconductor devices are formed. There is an inspection in which the electrical performance of each semiconductor device is determined by setting it in a device and bringing a probe into contact with the electrode of each semiconductor device.

In this inspection, semiconductor devices determined to be defective are marked with ink so that they can be sorted out in the sorting process after division.

However, with this inspection method, it is difficult to adjust the amount of ink adhered to the ink, and there is a risk that the marked shapes may become irregular, making it impossible to sort accurately.In addition, the ink may scatter, causing non-defective semiconductor devices to be rejected. There is also the problem of contamination.

(Object of the Invention) The present invention has been made in view of the disadvantages of the present invention, and its purpose is to be able to accurately and reliably mark a defective semiconductor device with a specific shape; We propose a marking method that does not contaminate non-defective products.

(Structure of the Invention) For this purpose, the marking method of the present invention is a method for inspecting the quality of a semiconductor device and marking it if it is defective. and a process of applying pressure to the paint portion of the semiconductor device if the test result of the semiconductor device is defective.

(Example) Examples of the present invention will be described below. The figure shows an example of this. In this embodiment, the inspection target is a wafer on which a plurality of semiconductor devices such as LSIs are formed, and the process of covering the other surfaces with a protective film except for wire bonding electrodes is completed.

FIG. 1 shows a transistor portion of a semiconductor device on a wafer formed in this manner. 1 is a p-type semiconductor substrate (1ffll for each semiconductor device), 2
3 is an n-type epitaxial growth layer, 3 is a high concentration p-type (p
4 is an npn type transistor region, 4b is a p type heath diffusion region, 4e is a high concentration n type (n+) emitter diffusion region, 4c is an n type collector region, 4a is a This is a high concentration n-type buried region.

5 is an oxide film, 6 is a Heath extraction electrode, 7 is an emitter extraction electrode, and 8 is a collector extraction electrode, each of which is as follows:
It is drawn out to a wire bonding region located at a distance from the active region of the semiconductor device. A protective film 9 has a window 9a formed in the wire bonding region 8a of the collector lead-out electrode 8, and the region 8a of the electrode 8 is exposed. Similarly, windows are formed for the other electrodes 6.7 so as to be exposed in the wire bonding area (not shown).

In this embodiment, as shown in FIG. 2, the window fOa for wire bonding is left on the top surface of such a semiconductor device, and a paint that is colored and hardened by applying pressure (pressure-sensitive hardening color paint) is applied. A photoresist 10 is applied. This photoresist 10 is made by mixing microcapsules filled with a curing agent and a coloring agent (for example, black) in a photosensitive synthetic resin liquid such as epoxy. In coating, first, the entire upper surface of the semiconductor device is coated with IHil and dried, and then the windows 9a, 10a and all other similar windows are cut out by photoetching.

Then, the wafer is placed in an inspection device to inspect the quality of the wafer, and parts of the semiconductor device determined to be defective are struck with a hammer. As a result, as shown in Figure 3, the microcapsules in the hit area are destroyed, and the curing agent and color former ooze out, giving the area a specific color (for example, black). is colored and cured, and a mark 11 is attached thereto.

In this way, after each semiconductor device on the wafer has been inspected and any defective devices have been damaged, the wafer is removed and the uncured photoresist portion is removed using a solvent (for example, in the case of epoxy). As shown in FIG. 4, only the mark 11 on the semiconductor device determined to be defective remains as shown in FIG.

As a result, the adjustment of δIN of the movable part of the hammer part is easy because it is only necessary to adjust the hammer so that it exerts a predetermined pressure. As a result, the shape is accurate, and it is possible to reliably distinguish between good and defective products in the subsequent process.

(Effects of the Invention) As described above, according to the present invention, it is possible to accurately and reliably mark a defective semiconductor device with a specific shape, without contaminating good products, and therefore, conventional ink can be used. Compared to conventional methods, handling is easier, and good and defective products can be reliably sorted.

[Brief explanation of drawings]

1 to 4 are cross-sectional views of a portion of a semiconductor device for explaining the marking method of the present invention. ■...Semiconductor substrate, 2...Epitaxial growth layer,
3... Isolation region, 4... Transistor region, 5...
・Oxide film, 6-8... Electrode, 9... Protective film, 10.
...Photoresist, 11...mark. Patent applicant New Japan Radio Co., Ltd. Agent Patent attorney Tsuneaki Nagao - He pulse Pulse mouth Mouth 1 inch wK pulse

Claims (3)

[Claims] (1) A method for inspecting the quality of a semiconductor device and marking it if it is defective, which includes a process of applying and drying a pressure-sensitive curing coloring paint on the top surface of the semiconductor device leaving an electrode portion, and an inspection result of the semiconductor device. and applying pressure to the paint portion of the semiconductor device when the semiconductor device is defective. (2) The pressure-sensitive curing coloring paint is made of a photoresist in which microcapsules filled with a curing agent and a coloring agent of a specific color are mixed with a photosensitive resin. marking method. (3) The marking method according to claim 1, wherein the pressure is applied by striking with a hammer.