JPS6119167A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS6119167A
JPS6119167A JP59139692A JP13969284A JPS6119167A JP S6119167 A JPS6119167 A JP S6119167A JP 59139692 A JP59139692 A JP 59139692A JP 13969284 A JP13969284 A JP 13969284A JP S6119167 A JPS6119167 A JP S6119167A
Authority
JP
Japan
Prior art keywords
layer
base
emitter
type
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59139692A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0458705B2 (enrdf_load_stackoverflow
Inventor
Kenichi Imamura
健一 今村
Naoki Yokoyama
直樹 横山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59139692A priority Critical patent/JPS6119167A/ja
Publication of JPS6119167A publication Critical patent/JPS6119167A/ja
Publication of JPH0458705B2 publication Critical patent/JPH0458705B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions

Landscapes

  • Bipolar Transistors (AREA)
JP59139692A 1984-07-05 1984-07-05 半導体装置 Granted JPS6119167A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59139692A JPS6119167A (ja) 1984-07-05 1984-07-05 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59139692A JPS6119167A (ja) 1984-07-05 1984-07-05 半導体装置

Publications (2)

Publication Number Publication Date
JPS6119167A true JPS6119167A (ja) 1986-01-28
JPH0458705B2 JPH0458705B2 (enrdf_load_stackoverflow) 1992-09-18

Family

ID=15251195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59139692A Granted JPS6119167A (ja) 1984-07-05 1984-07-05 半導体装置

Country Status (1)

Country Link
JP (1) JPS6119167A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63133570A (ja) * 1986-11-26 1988-06-06 Agency Of Ind Science & Technol ホツトエレクトロン・トランジスタの製法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57197862A (en) * 1981-05-29 1982-12-04 Fujitsu Ltd Active semiconductor device and manufacture thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57197862A (en) * 1981-05-29 1982-12-04 Fujitsu Ltd Active semiconductor device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63133570A (ja) * 1986-11-26 1988-06-06 Agency Of Ind Science & Technol ホツトエレクトロン・トランジスタの製法

Also Published As

Publication number Publication date
JPH0458705B2 (enrdf_load_stackoverflow) 1992-09-18

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