JPS611908B2 - - Google Patents

Info

Publication number
JPS611908B2
JPS611908B2 JP51095585A JP9558576A JPS611908B2 JP S611908 B2 JPS611908 B2 JP S611908B2 JP 51095585 A JP51095585 A JP 51095585A JP 9558576 A JP9558576 A JP 9558576A JP S611908 B2 JPS611908 B2 JP S611908B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51095585A
Other languages
Japanese (ja)
Other versions
JPS5320885A (en
Inventor
Junichi Nishizawa
Kentaro Nakamura
Hisao Oka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9558576A priority Critical patent/JPS5320885A/ja
Publication of JPS5320885A publication Critical patent/JPS5320885A/ja
Publication of JPS611908B2 publication Critical patent/JPS611908B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP9558576A 1976-08-11 1976-08-11 Electrostatic induction type semiconductor device Granted JPS5320885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9558576A JPS5320885A (en) 1976-08-11 1976-08-11 Electrostatic induction type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9558576A JPS5320885A (en) 1976-08-11 1976-08-11 Electrostatic induction type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5320885A JPS5320885A (en) 1978-02-25
JPS611908B2 true JPS611908B2 (enExample) 1986-01-21

Family

ID=14141648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9558576A Granted JPS5320885A (en) 1976-08-11 1976-08-11 Electrostatic induction type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5320885A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5612770A (en) * 1979-07-11 1981-02-07 Hitachi Ltd Semiconductor device and its manufacturing device
JPS5894218A (ja) * 1981-11-30 1983-06-04 Semiconductor Res Found フオトカツプラ
JPS5895866A (ja) * 1981-12-02 1983-06-07 Hitachi Ltd 光トリガ・スイツチング素子
JPS5940576A (ja) * 1982-08-30 1984-03-06 Junichi Nishizawa フオトサイリスタ
JPS60784A (ja) * 1983-06-16 1985-01-05 Olympus Optical Co Ltd 光電変換装置
JPH0779159B2 (ja) * 1984-03-22 1995-08-23 潤一 西澤 光トリガ・光クエンチ可能なサイリスタ装置
JPS6159776A (ja) * 1984-08-30 1986-03-27 Semiconductor Res Found 光トリガサイリスタ
JPS62188272A (ja) * 1987-02-03 1987-08-17 Semiconductor Res Found 静電誘導サイリスタを含む半導体装置
JPS62188271A (ja) * 1987-02-03 1987-08-17 Semiconductor Res Found 静電誘導サイリスタを含む半導体装置
JP2677800B2 (ja) * 1987-11-02 1997-11-17 工業技術院長 パーミアブルベーストランジスタの製造方法
JPH028057U (enExample) * 1989-06-15 1990-01-18
KR930009236B1 (ko) * 1991-05-03 1993-09-24 주식회사 금성사 마그네트론의 냉각장치
JP2536703Y2 (ja) * 1993-12-03 1997-05-28 潤一 西澤 フォトサイリスタ

Also Published As

Publication number Publication date
JPS5320885A (en) 1978-02-25

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