JPS61183548U - - Google Patents
Info
- Publication number
- JPS61183548U JPS61183548U JP1986065063U JP6506386U JPS61183548U JP S61183548 U JPS61183548 U JP S61183548U JP 1986065063 U JP1986065063 U JP 1986065063U JP 6506386 U JP6506386 U JP 6506386U JP S61183548 U JPS61183548 U JP S61183548U
- Authority
- JP
- Japan
- Prior art keywords
- memory
- read
- semiconductor read
- utility
- model registration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- 239000000463 material Substances 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000035699 permeability Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986065063U JPS61183548U (enrdf_load_html_response) | 1986-05-01 | 1986-05-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986065063U JPS61183548U (enrdf_load_html_response) | 1986-05-01 | 1986-05-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61183548U true JPS61183548U (enrdf_load_html_response) | 1986-11-15 |
Family
ID=30596715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986065063U Pending JPS61183548U (enrdf_load_html_response) | 1986-05-01 | 1986-05-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61183548U (enrdf_load_html_response) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5333076A (en) * | 1976-09-09 | 1978-03-28 | Toshiba Corp | Production of mos type integrated circuit |
| JPS5375781A (en) * | 1976-12-14 | 1978-07-05 | Standard Microsyst Smc | Method of producing mos semiconductor circuit |
-
1986
- 1986-05-01 JP JP1986065063U patent/JPS61183548U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5333076A (en) * | 1976-09-09 | 1978-03-28 | Toshiba Corp | Production of mos type integrated circuit |
| JPS5375781A (en) * | 1976-12-14 | 1978-07-05 | Standard Microsyst Smc | Method of producing mos semiconductor circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2980879B2 (ja) | 薄膜トランジスタ及びその製造方法 | |
| JPH04359477A (ja) | Nチャネル単一ポリシリコンレベルepromセルを得るプロセスおよびそのプロセスによって得たセル | |
| US6927116B2 (en) | Semiconductor device having a double-well structure and method for manufacturing the same | |
| JP2561071B2 (ja) | 半導体メモリ装置とその製造方法 | |
| JPH02122563A (ja) | 半導体装置の製造方法 | |
| JPH05343278A (ja) | 半導体装置の製造方法 | |
| JPS61183548U (enrdf_load_html_response) | ||
| JPS627535B2 (enrdf_load_html_response) | ||
| JPH0479424U (enrdf_load_html_response) | ||
| JPH10229178A (ja) | 半導体装置の製造方法 | |
| JPS6228587B2 (enrdf_load_html_response) | ||
| JPH02162769A (ja) | 相補型薄膜トランジスタの製造方法 | |
| JPH0487660U (enrdf_load_html_response) | ||
| JPH03169071A (ja) | 半導体装置の製造方法 | |
| KR100295692B1 (ko) | 플래시 메모리 제조방법 | |
| JPS5856468A (ja) | 半導体製造方法 | |
| JPS61140164A (ja) | 半導体集積回路の製造方法 | |
| JP3722657B2 (ja) | 半導体装置及びその製造製法 | |
| JPS6284549A (ja) | 読み出し専用半導体記憶装置の製造方法 | |
| JPH01278773A (ja) | 半導体集積回路の製造方法 | |
| JPS63228745A (ja) | 半導体記憶装置の製造方法 | |
| JPH0760863B2 (ja) | 薄膜マスクrom | |
| JPH06196660A (ja) | 半導体装置の製造方法 | |
| JPH05206163A (ja) | 半導体装置の製造方法 | |
| JPS61294815A (ja) | 半導体装置の製造方法 |