JPS6118348B2 - - Google Patents

Info

Publication number

JPS6118348B2

JPS6118348B2 JP49042538A JP4253874A JPS6118348B2 JP S6118348 B2 JPS6118348 B2 JP S6118348B2 JP 49042538 A JP49042538 A JP 49042538A JP 4253874 A JP4253874 A JP 4253874A JP S6118348 B2 JPS6118348 B2 JP S6118348B2

Authority

JP

Japan

Prior art keywords

oxide film

silicon oxide

glass layer

forming

thin silicon

Prior art date

1974-04-15

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
• 229910052814 silicon oxide Inorganic materials 0.000 claims description 23
• 239000011521 glass Substances 0.000 claims description 18
• 239000012535 impurity Substances 0.000 claims description 14
• 239000004065 semiconductor Substances 0.000 claims description 11
• 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
• 239000000758 substrate Substances 0.000 claims description 7
• 238000010438 heat treatment Methods 0.000 claims description 3
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
• 229910052710 silicon Inorganic materials 0.000 description 12
• 239000010703 silicon Substances 0.000 description 12
• 238000009792 diffusion process Methods 0.000 description 11
• 238000000034 method Methods 0.000 description 10
• 238000004519 manufacturing process Methods 0.000 description 7
• ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
• OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
• 229910052796 boron Inorganic materials 0.000 description 3
• 229910052698 phosphorus Inorganic materials 0.000 description 3
• 239000011574 phosphorus Substances 0.000 description 3
• 239000005368 silicate glass Substances 0.000 description 3
• 238000007796 conventional method Methods 0.000 description 2
• 238000001947 vapour-phase growth Methods 0.000 description 2
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
• 229910052782 aluminium Inorganic materials 0.000 description 1
• QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
• 230000015572 biosynthetic process Effects 0.000 description 1
• 229910021419 crystalline silicon Inorganic materials 0.000 description 1
• 230000007547 defect Effects 0.000 description 1
• 238000005530 etching Methods 0.000 description 1
• 230000005669 field effect Effects 0.000 description 1
• 230000003647 oxidation Effects 0.000 description 1
• 238000007254 oxidation reaction Methods 0.000 description 1
• 229910052760 oxygen Inorganic materials 0.000 description 1
• 239000001301 oxygen Substances 0.000 description 1
• 230000002093 peripheral effect Effects 0.000 description 1
• 239000012808 vapor phase Substances 0.000 description 1