JPS61181740U - - Google Patents
Info
- Publication number
- JPS61181740U JPS61181740U JP6678185U JP6678185U JPS61181740U JP S61181740 U JPS61181740 U JP S61181740U JP 6678185 U JP6678185 U JP 6678185U JP 6678185 U JP6678185 U JP 6678185U JP S61181740 U JPS61181740 U JP S61181740U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductive layer
- low
- antibody
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000011241 protective layer Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Landscapes
- Electronic Switches (AREA)
Description
第１図〜第３図は本実施例の製造工程の説明図
であり、第１図のイはＡｌの蒸着工程で、ロ〜ニ
は導体上にＡｌ２Ｏ３の製造工程図で、ホは前記
薄膜の外観斜視図であり、第２図のイ〜ハは抵抗
体の製造工程で、ニは外観斜視図であり、第３図
は本実施例によるサーマルヘツドの断面図を示す
。第４図は従来例のサーマルヘツドの断面図であ
る。
１…基板、２…アルミニウム、５…絶縁層、８
ａ，８ｂ…抵抗体層、１０…保護層。
Figures 1 to 3 are explanatory diagrams of the manufacturing process of this example, where A in Figure 1 is the Al vapor deposition process, B to N are the manufacturing process diagrams of Al 2 O 3 on the conductor, and Hole. 2 is a perspective view of the external appearance of the thin film, A to C of FIG. 2 show the manufacturing process of the resistor, D is a perspective view of the external appearance, and FIG. 3 is a sectional view of the thermal head according to this embodiment. FIG. 4 is a sectional view of a conventional thermal head. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Aluminum, 5... Insulating layer, 8
a, 8b...Resistor layer, 10...Protective layer.
Claims (1)
ムを蒸着して導体層を形成し、導体層を部分的に
酸化して絶縁層を形成し、前記絶縁層の上部及び
導体層の一部を共に被覆するように、低抗体層を
形成し、更に前記導体層と低抗体層を覆うように
保護層を備えたサーマルヘツド。 Using thin film technology on the surface of the substrate, deposit aluminum to form a conductive layer, partially oxidize the conductive layer to form an insulating layer, and combine the upper part of the insulating layer and a part of the conductive layer. A thermal head having a low-antibody layer formed thereon so as to cover the conductor layer and a protective layer covering the conductor layer and the low-antibody layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6678185U JPS61181740U (en) | 1985-05-03 | 1985-05-03 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6678185U JPS61181740U (en) | 1985-05-03 | 1985-05-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61181740U true JPS61181740U (en) | 1986-11-13 |
Family
ID=30599997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6678185U Pending JPS61181740U (en) | 1985-05-03 | 1985-05-03 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61181740U (en) |
-
1985
- 1985-05-03 JP JP6678185U patent/JPS61181740U/ja active Pending