JPH03120035U - - Google Patents

Info

Publication number
JPH03120035U
JPH03120035U JP2831890U JP2831890U JPH03120035U JP H03120035 U JPH03120035 U JP H03120035U JP 2831890 U JP2831890 U JP 2831890U JP 2831890 U JP2831890 U JP 2831890U JP H03120035 U JPH03120035 U JP H03120035U
Authority
JP
Japan
Prior art keywords
film wiring
semiconductor substrate
metal film
semiconductor
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2831890U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2831890U priority Critical patent/JPH03120035U/ja
Publication of JPH03120035U publication Critical patent/JPH03120035U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図aは本考案の一実施例の部分平面図、同
図bは同図aのA−A断面図、第2図は考案の第
2実施例の部分平面図、第3図aは従来例の部分
平面図、同図bは同図aのA−A断面図である。 1……半導体基板、2……絶縁層、3,4……
金属膜配線、3a……膜の穴、4a……膜のスリ
ツト、5……コンタクト部、6……表面保護膜。
Figure 1a is a partial plan view of an embodiment of the invention, Figure b is a sectional view taken along line A-A in Figure a, Figure 2 is a partial plan view of a second embodiment of the invention, and Figure 3a is a partial plan view of the second embodiment of the invention. A partial plan view of the conventional example, FIG. 1... Semiconductor substrate, 2... Insulating layer, 3, 4...
Metal film wiring, 3a...hole in the film, 4a...slit in the film, 5...contact portion, 6...surface protective film.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体基板上に金属膜配線を有し、さらにこの
膜配線を被う表面保護膜を有する半導体素子にお
いて、該金属膜配線には表面から半導体基板に達
する多数の穴またはスリツトがあけられているこ
とを特徴とする半導体素子。
In a semiconductor element having a metal film wiring on a semiconductor substrate and a surface protective film covering the film wiring, the metal film wiring has a large number of holes or slits extending from the surface to the semiconductor substrate. A semiconductor device characterized by:
JP2831890U 1990-03-19 1990-03-19 Pending JPH03120035U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2831890U JPH03120035U (en) 1990-03-19 1990-03-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2831890U JPH03120035U (en) 1990-03-19 1990-03-19

Publications (1)

Publication Number Publication Date
JPH03120035U true JPH03120035U (en) 1991-12-10

Family

ID=31531126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2831890U Pending JPH03120035U (en) 1990-03-19 1990-03-19

Country Status (1)

Country Link
JP (1) JPH03120035U (en)

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