JPS61181175A - Reflected beam type optical coupling semiconductor device - Google Patents
Reflected beam type optical coupling semiconductor deviceInfo
- Publication number
- JPS61181175A JPS61181175A JP60021074A JP2107485A JPS61181175A JP S61181175 A JPS61181175 A JP S61181175A JP 60021074 A JP60021074 A JP 60021074A JP 2107485 A JP2107485 A JP 2107485A JP S61181175 A JPS61181175 A JP S61181175A
- Authority
- JP
- Japan
- Prior art keywords
- light
- projecting
- recess
- resin
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 230000008878 coupling Effects 0.000 title description 2
- 238000010168 coupling process Methods 0.000 title description 2
- 238000005859 coupling reaction Methods 0.000 title description 2
- 230000003287 optical effect Effects 0.000 title description 2
- 229920005989 resin Polymers 0.000 claims abstract description 36
- 239000011347 resin Substances 0.000 claims abstract description 36
- 238000007789 sealing Methods 0.000 claims abstract description 18
- 238000005192 partition Methods 0.000 claims abstract description 12
- 239000008188 pellet Substances 0.000 claims description 15
- 239000011810 insulating material Substances 0.000 claims description 3
- 230000007257 malfunction Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000002950 deficient Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
Abstract
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は反射光型光結合半導体装置の改良に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to improvements in reflective light type optically coupled semiconductor devices.
反射光型光結合半導体装置はセンサとしての機能を有し
、光電スイッチ、論理回路結合、位置検出、タイミング
検出等の多様な用途に用いられている。Reflected light type optically coupled semiconductor devices have a sensor function and are used in a variety of applications such as photoelectric switches, logic circuit connections, position detection, and timing detection.
第2図は、位置検出器として用いられている従来の反射
光型光結合半導体装置における一般的な構造を示す断面
図である。同区において、1はセラミック等の絶縁性材
料でできた外囲器ケースである。該外囲器ケース1の発
光素子用および受光素子用の二つの凹部が設けられ、両
凹部は仕切り壁2で分離されている。これら夫々の凹部
底面には金属性のマウント部3.4が設けられ、各マウ
ント部上には発光素子ペレット5、受光素子ペレット6
が夫々マウントされている。そして、前記の両凹部内に
は発光素子部および受光素子部を封止するために透明な
エポキシ樹脂による樹脂封止層7.8が形成されている
。なお、マウント部3゜4はリードとして外囲器ケース
1の外に延出され、また発光素子ペレット5および受光
素子ベレット6には図示しないワイヤボンディングが施
されている。FIG. 2 is a cross-sectional view showing a general structure of a conventional reflection type optically coupled semiconductor device used as a position detector. In the same area, 1 is an envelope case made of insulating material such as ceramic. Two recesses are provided in the envelope case 1, one for the light emitting element and the other for the light receiving element, and the two recesses are separated by a partition wall 2. A metal mount part 3.4 is provided on the bottom of each of these recesses, and a light emitting element pellet 5 and a light receiving element pellet 6 are placed on each mount part.
are mounted respectively. A resin sealing layer 7.8 made of transparent epoxy resin is formed in both of the recesses to seal the light emitting element section and the light receiving element section. The mount portion 3.degree.4 is extended outside the envelope case 1 as a lead, and the light emitting element pellet 5 and the light receiving element pellet 6 are wire bonded (not shown).
上記の光結合半導体装置では、発光素子ペレット5から
発射された光が物体に反射され、この反射光を受光素子
ベレット6が検出することにより位置検出器として機能
するるものである。In the optically coupled semiconductor device described above, the light emitted from the light emitting element pellet 5 is reflected by an object, and the light receiving element pellet 6 detects this reflected light, thereby functioning as a position detector.
ところで上記従来の反射光型光結合半導体装置は、第3
図(A)に示すように外囲器ケース1を具備したリード
フレームを用い、次にようにして製造される。なお、同
図において9はリードパターン、10はタイバーである
。By the way, the above-mentioned conventional reflective light type optically coupled semiconductor device has a third
As shown in Figure (A), a lead frame equipped with an envelope case 1 is used and manufactured in the following manner. In the figure, 9 is a lead pattern and 10 is a tie bar.
まず各素子部のマウント部3,4上に発光素子5および
受光素子6を夫々マウントし、各素子についてマウント
部に対向して設けられたボンディング部との間でワイヤ
ボンディングを施す。図中11はボンディングワイヤで
ある。続いて、外囲器ケースの発光素子用凹部および受
光素子用凹部の中に透明なエポキシ樹脂を流し込んで硬
化させ、各素子部を封止する。次に、タイバー10・・
・を切除して各リードパターン9・・・を分離した後、
分離された個々のリード9・・・を所定方向に折り曲げ
てリードフォーミングを行ない、目的の光結合半導体装
置を得る。First, the light emitting element 5 and the light receiving element 6 are mounted on the mount parts 3 and 4 of each element part, respectively, and wire bonding is performed between each element and a bonding part provided opposite the mount part. 11 in the figure is a bonding wire. Subsequently, a transparent epoxy resin is poured into the light emitting element recess and the light receiving element recess of the envelope case and hardened to seal each element. Next, tie bar 10...
After cutting out and separating each lead pattern 9...
Lead forming is performed by bending the separated individual leads 9 in a predetermined direction to obtain a desired optically coupled semiconductor device.
上記従来の反射光型光結合半導体装置では、樹脂封止層
7.8がレンズとして機能することから発光側および受
光側を同形状とすることが要求される。このため、樹脂
封止に際しては画素子部に対する樹脂の流し込み量を同
量にする必要があり、また樹脂量が少な過ぎると指向特
性が低下するため、樹脂の流し込みの際に画素子部の樹
脂が互いにオーバーフローして連続した樹脂封止層が形
成されてしまう問題があった。In the conventional reflective light type optically coupled semiconductor device described above, since the resin sealing layer 7.8 functions as a lens, it is required that the light emitting side and the light receiving side have the same shape. For this reason, when resin sealing, it is necessary to pour the same amount of resin to the pixel element part. Also, if the amount of resin is too small, the directivity will deteriorate, so when pouring the resin, the resin of the pixel element part There was a problem that the resin sealing layers overflowed each other and a continuous resin sealing layer was formed.
こうして発光素子部の樹脂封止層7と受光素子部の樹脂
封止層8とが連続されてしまうと、発光素子ペレット3
からの光が樹脂封止層の中を屈折して受光素子部にリー
クして誤動作を起こす現象が生じ、製品特性が低下して
しまう。If the resin sealing layer 7 of the light-emitting element part and the resin sealing layer 8 of the light-receiving element part become continuous in this way, the light-emitting element pellet 3
A phenomenon occurs in which light is refracted through the resin sealing layer and leaks to the light-receiving element, causing malfunctions and deteriorating product characteristics.
本発明は上記事情に鑑みてなされたもので、樹脂封止の
際のオーバーフローを防止して製造することができる構
造を具備し、従って誤動作を生じることがない特性の優
れた反射光型光結合型半導体装置を提供しようとするも
のである。The present invention has been made in view of the above circumstances, and has a structure that can be manufactured by preventing overflow during resin sealing, and therefore has an excellent reflective light type optical coupling that does not cause malfunctions. The present invention aims to provide a type semiconductor device.
本発明による反射光型光結合半導体装置は、仕切り壁で
隔てられた発光素子用凹部および受光素子用凹部を有す
る絶縁性材料でできた外囲器ケースと、前記発光素子用
凹部および受光素子用凹部の夫々の底面に設けられた素
子マウント部およびボンディング端子と、前記発光素子
用凹部において前記素子マウント部上にマウントされ且
つ前記ボンディング端子との間でワイヤボンディングを
施された発光素子ペレットと、前記受光素子用凹部にお
いて前記素子マウント部上にマウントされ且つ前記ボン
ディング端子との間でワイヤボンディングを施された受
光素子ペレットと、前記発光素子用凹部内に充填されて
発光素子部を封止する透明樹脂層と、前記受光素子用凹
部内に充填されて受光素子部を封止する透明樹脂層と、
前記素子マウント部およびボンディング端子の夫々から
前記外囲器ケースの外に延出されたリードとを具備し、
前記仕切り壁を外囲器ケースの外壁頂面より上方に突出
させ、且つ該突出部の先端で両素子部側に突出した樹脂
止め用の突縁を設けたことを特徴とするものである。A reflected light type optically coupled semiconductor device according to the present invention includes an envelope case made of an insulating material and having a recess for a light emitting element and a recess for a light receiving element separated by a partition wall, and a recess for the light emitting element and a recess for the light receiving element. an element mount part and a bonding terminal provided on the bottom surface of each of the recesses; a light emitting element pellet mounted on the element mount part in the light emitting element recess and wire-bonded to the bonding terminal; A light-receiving element pellet mounted on the element mount part in the light-receiving element recess and wire-bonded to the bonding terminal, and a light-receiving element pellet filled in the light-emitting element recess to seal the light-emitting element part. a transparent resin layer; a transparent resin layer filled in the light-receiving element recess to seal the light-receiving element;
and leads extending from each of the element mount portion and the bonding terminal to the outside of the envelope case,
The partition wall is made to protrude upward from the top surface of the outer wall of the envelope case, and the protruding portion is provided with a resin-fastening protrusion protruding toward both element portions at the tips thereof.
上記のように本発明では外囲器ケースの仕切り壁を高く
し、且つ樹脂止め用の突縁を設けたことから、発光素子
部および受光素子部を樹脂封止する際に封止樹脂のオー
バーフローで画素子部の樹脂封止層が連続する事態を防
止でき、従って誤動作を生じない良好な特性を得ること
ができる。As described above, in the present invention, since the partition wall of the envelope case is made high and the projecting edge for resin fixing is provided, overflow of the sealing resin occurs when the light emitting element part and the light receiving element part are sealed with resin. Therefore, it is possible to prevent the resin sealing layer in the pixel element portion from being continuous, and therefore, it is possible to obtain good characteristics that do not cause malfunctions.
第1図(A)は本発明の一実施例になる位置検出器の製
造に用いるリードフレームの斜視図であり、同図(B)
はこのリードフレームを用いて製造された位置検出器を
一部切り欠いて示す正面図である。これらの図において
、第2図および第3図と同じ部分には同一の参照番号を
付しである。FIG. 1(A) is a perspective view of a lead frame used for manufacturing a position detector according to an embodiment of the present invention, and FIG. 1(B)
FIG. 2 is a partially cutaway front view of a position detector manufactured using this lead frame. In these figures, the same parts as in FIGS. 2 and 3 are given the same reference numerals.
即ち、1は外囲器ケース、2は仕切り壁、3.4は素子
マウント部、5は発光素子ペレット、6は受光素子ペレ
ット、7,8は樹脂封止層である。That is, 1 is an envelope case, 2 is a partition wall, 3.4 is an element mounting part, 5 is a light emitting element pellet, 6 is a light receiving element pellet, and 7 and 8 are resin sealing layers.
第1図(A)と第3図(A)とを比較すれば明らかなよ
うに、第1図(A)のリードフレームは外囲器ケースに
おける仕切り壁2は第3図(A)の場合よりも高く、外
囲器ケースの外壁頂面よりも上方に突出している。そし
て、この突出部12には両側に溝が形成されており、そ
の結果突出部12の先端には両側に突出した突縁13が
形成されている。この突出部12以外の構成は、第3図
(A)のリードフレームと略同じである。As is clear from a comparison between FIG. 1(A) and FIG. 3(A), the lead frame in FIG. 1(A) is different from the partition wall 2 in the envelope case in the case of FIG. It is higher than the outer wall of the envelope case and protrudes above the top surface of the outer wall of the envelope case. Grooves are formed on both sides of the protruding part 12, and as a result, a protruding edge 13 is formed at the tip of the protruding part 12, which protrudes on both sides. The structure other than this protrusion 12 is substantially the same as the lead frame shown in FIG. 3(A).
また、上記第1図(A)のリードフレームを用いて同図
(B)の位置検出器を製造する工程も、第3図(A)(
B)で説明した従来の方法と全く同じである。従って、
この実施例になる位置検出器は、第1図(B)から明ら
かなように、仕切り壁2に突出部12および突縁13が
設けられている点を除けば第2図の従来の位置検出器と
全く同じ構造になっている。Furthermore, the process of manufacturing the position detector shown in FIG. 1(B) using the lead frame shown in FIG. 1(A) is also shown in FIG.
This is exactly the same as the conventional method explained in B). Therefore,
As is clear from FIG. 1(B), the position detector according to this embodiment is similar to the conventional position detector shown in FIG. It has exactly the same structure as the container.
上記のように、この実施例では仕切り!!12および突
縁13を設けたため、次のような作用効果が得られる。As mentioned above, this example uses partitions! ! 12 and the protruding edge 13, the following effects can be obtained.
即ち、その製造において、樹脂封止を行なう際に従来の
位置検出器であればオーバーフローを生じてしまう量の
封止樹脂を注入した場合にも、突出部12の存在および
突縁13が樹脂止めとして機能することから、第1図(
B)に示したように画素子部の樹脂封止層7.8は完全
に分離され、突出部12を越えて連続した樹脂封止層が
形成されることは無い。従って、上記実施例の位置検出
器によれば従来のようなリーク不良を著しく減少し、誤
動作の防止および製造歩留の向上を達成することができ
る。That is, even when the molding resin is injected in an amount that would cause an overflow in a conventional position sensor, the presence of the protruding portion 12 and the protruding edge 13 can be prevented by the resin sealing. Figure 1 (
As shown in B), the resin sealing layer 7.8 of the pixel element portion is completely separated, and no continuous resin sealing layer is formed beyond the protrusion 12. Therefore, according to the position detector of the above-described embodiment, it is possible to significantly reduce leakage defects as in the prior art, prevent malfunctions, and improve manufacturing yield.
なお、上記実施例においては突出部12の両側から溝を
形成して突縁13を設けているが、突縁13の形成手段
はこれに限定されるものではない。In the above embodiment, grooves are formed on both sides of the protruding portion 12 to provide the protruding edges 13, but the means for forming the protruding edges 13 is not limited to this.
また、本発明の適用範囲は位置検出器に限定されるもの
ではなく、光電スイッチやタイミング検出器等、他の反
射光型光結合半導体装置にも同様に適用することができ
る。Further, the scope of application of the present invention is not limited to position detectors, but can be similarly applied to other reflective light type optically coupled semiconductor devices such as photoelectric switches and timing detectors.
以上詳述したように、本発明の反射光型光結合半導体装
置は樹脂封止の際のオーバーフローを防止できる構造を
具備し、従って誤動作を生じない優れた特性が得られる
等、顕著な効果を奏するものである。As detailed above, the reflective light type optically coupled semiconductor device of the present invention has a structure that can prevent overflow during resin encapsulation, and therefore has remarkable effects such as excellent characteristics that do not cause malfunctions. It is something to play.
第1図(A)は本発明の一実施例になる位置検出器の製
造に用いるリードフレームの斜視図であり、同図(B)
は本発明の一実施例になる位置検出器を一部切り欠いて
示す正面図、第2図は従来の位置検出器を示す断面図で
あり、第3図(A)(B)はその製造方法とこれに用い
るリードフレームの説明図である。
1・・・外囲器ケース、2・・・仕切り壁、3.4・・
・素子マウント部、5・・・発光素子、6・・・受光素
子、7゜8・・・樹脂封止層、9・・・リードパターン
、10・・・タイバー、11・・・ボンディングワイヤ
、12・・・突出部、13・・・突縁。
出願人代理人 弁理士 鈴江武彦
ω 配
C嗜
舶FIG. 1(A) is a perspective view of a lead frame used for manufacturing a position detector according to an embodiment of the present invention, and FIG. 1(B)
2 is a partially cutaway front view showing a position detector according to an embodiment of the present invention, FIG. 2 is a sectional view showing a conventional position detector, and FIGS. FIG. 2 is an explanatory diagram of a method and a lead frame used in the method. 1... Envelope case, 2... Partition wall, 3.4...
・Element mount part, 5... Light emitting element, 6... Light receiving element, 7° 8... Resin sealing layer, 9... Lead pattern, 10... Tie bar, 11... Bonding wire, 12... Projection, 13... Projection. Applicant's agent Patent attorney Takehiko Suzue
Claims (1)
用凹部を有する絶縁性材料でできた外囲器ケースと、前
記発光素子用凹部および受光素子用凹部の夫々の底面に
設けられた素子マウント部およびボンディング端子と、
前記発光素子用凹部において前記素子マウント部上にマ
ウントされ且つ前記ボンディング端子との間でワイヤボ
ンディングを施された発光素子ペレットと、前記受光素
子用凹部において前記素子マウント部上にマウントされ
且つ前記ボンディング端子との間でワイヤボンディング
を施された受光素子ペレットと、前記発光素子用凹部内
に充填されて発光素子部を封止する透明樹脂層と、前記
受光素子用凹部内に充填されて受光素子部を封止する透
明樹脂層と、前記素子マウント部およびボンディング端
子の夫々から前記外囲器ケースの外に延出されたリード
とを具備し、前記仕切り壁を外囲器ケースの外壁頂面よ
り上方に突出させ、且つ該突出部の先端で両素子部側に
突出した樹脂止め用の突縁を設けたことを特徴とする反
射光型光結合半導体装置。An envelope case made of an insulating material and having a recess for a light emitting element and a recess for a light receiving element separated by a partition wall, and an element mount section provided on the bottom surface of each of the recess for the light emitting element and the recess for the light receiving element. and a bonding terminal,
a light-emitting element pellet mounted on the element mount part in the light-emitting element recess and wire-bonded to the bonding terminal; and a light-emitting element pellet mounted on the element mount part in the light-receiving element recess and bonded to the A light-receiving element pellet wire-bonded to a terminal, a transparent resin layer filled in the light-emitting element recess to seal the light-emitting element, and a light-receiving element filled in the light-receiving element recess. a transparent resin layer for sealing the outer wall of the enclosure case, and leads extending from the element mounting section and the bonding terminal to the outside of the enclosure case, and What is claimed is: 1. A reflective light type optically coupled semiconductor device, characterized in that a projecting edge for resin fixing is provided at the tip of the projecting portion, the projecting portion projecting further upward and toward both element portions.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60021074A JPS61181175A (en) | 1985-02-06 | 1985-02-06 | Reflected beam type optical coupling semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60021074A JPS61181175A (en) | 1985-02-06 | 1985-02-06 | Reflected beam type optical coupling semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61181175A true JPS61181175A (en) | 1986-08-13 |
Family
ID=12044740
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60021074A Pending JPS61181175A (en) | 1985-02-06 | 1985-02-06 | Reflected beam type optical coupling semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61181175A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5291038A (en) * | 1990-12-19 | 1994-03-01 | Sharp Kabushiki Kaisha | Reflective type photointerrupter |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58203044A (en) * | 1982-05-21 | 1983-11-26 | 株式会社 潤工社 | Fluoroplastic shape and its manufacture |
JPS60257207A (en) * | 1984-06-01 | 1985-12-19 | Tanazawa Hatsukoushiya:Kk | Mold for molding resin and manufacture thereof |
-
1985
- 1985-02-06 JP JP60021074A patent/JPS61181175A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58203044A (en) * | 1982-05-21 | 1983-11-26 | 株式会社 潤工社 | Fluoroplastic shape and its manufacture |
JPS60257207A (en) * | 1984-06-01 | 1985-12-19 | Tanazawa Hatsukoushiya:Kk | Mold for molding resin and manufacture thereof |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5291038A (en) * | 1990-12-19 | 1994-03-01 | Sharp Kabushiki Kaisha | Reflective type photointerrupter |
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