JPS6276684A - Reflected-light type light-coupled semiconductor device - Google Patents

Reflected-light type light-coupled semiconductor device

Info

Publication number
JPS6276684A
JPS6276684A JP60216562A JP21656285A JPS6276684A JP S6276684 A JPS6276684 A JP S6276684A JP 60216562 A JP60216562 A JP 60216562A JP 21656285 A JP21656285 A JP 21656285A JP S6276684 A JPS6276684 A JP S6276684A
Authority
JP
Japan
Prior art keywords
light
resin layer
emitting element
transparent resin
receiving element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60216562A
Other languages
Japanese (ja)
Inventor
Toshitada Kawaguchi
川口 敏惟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60216562A priority Critical patent/JPS6276684A/en
Publication of JPS6276684A publication Critical patent/JPS6276684A/en
Pending legal-status Critical Current

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  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To miniaturize a device and to simplify manufacturing processes, by a constitution, wherein light is emitted from only the limited region of the top surface of a semiconductor light emitting element, and the shape of a transparent resin layer and the distance between the light emitting element and a light receiving element are set so that the light, which is reflected by the surface of the transparent resin layer inward the resin layer, does not reach the semiconductor light receiving element. CONSTITUTION:A semiconductor light emitting element 13 is die-bonded to a header 11. A semiconductor light receiving element 14 is die-bonded to a header 12. Said light emitting element part and light receiving element part are sealed with a single transparent resin layer 15. Leads are extended from the headers 11 and 12 and a pad to the outside of the transparent resin layer 15. Light is emitted only from the limited region of the top surface of the semiconductor light emitting element 13. The expansion of the light from the light emitting element is suppressed so that the incident angle of the light, which is inputted to the surface of the transparent resin layer 15 from the light emitting element 13, does not become greater than the critical angle THETAc. The distance between both elements 13 and 14 is set so that the light, which is reflected by the surface of the transparent resin layer 15, does not reach the light receiving element 14.

Description

【発明の詳細な説明】 、〔発明の技術分野〕 本発明は反射光型光結合半導体装置に関する。[Detailed description of the invention] , [Technical field of invention] The present invention relates to a reflective light type optically coupled semiconductor device.

〔発明の技術的背景〕[Technical background of the invention]

反射光型光結合半導体装置はセンサとしての機能を有し
、光電スイッチ、論理回路結合、位置検出、タイミング
検出等に使用されている。
Reflected light type optically coupled semiconductor devices have a sensor function and are used in photoelectric switches, logic circuit connections, position detection, timing detection, and the like.

第4図は従来の反射光型光結合半導体装置の一例を示す
斜視図であり、第5図は第4図のv−V線に沿う断面図
である。これらの図において、1はセラミック等の遮光
性材料でできた外囲器である。該外囲器1は周囲壁2、
底壁3および隔壁4からなり、上方が解放され且つ隔壁
4で隔てられた発光素子用の凹部と受光素子用の凹部と
が設けられている。発光素子用凹部には、その底面に設
けられた素子マウント用のヘッダー5上に半導体発光素
子6がダイボンディングされている。該半導体発光素子
6はボンディングワイヤ7を介してパッド8に接続され
ている。また、受光素子用凹部の底面に設けられたヘッ
ダ9上には、半導体受光素子10がダイボンディングさ
れている。該半導体受光素子10はボンディングワイヤ
11を介してパッド12に接続されている。そして、各
へラダおよびパッドに接続されたリード13・・・が外
囲器の底壁3から下方に延出されている。そして、画素
子部共に透明なエポキシ樹脂層14で封止されている。
FIG. 4 is a perspective view showing an example of a conventional reflective light type optically coupled semiconductor device, and FIG. 5 is a sectional view taken along the line v--v in FIG. 4. In these figures, 1 is an envelope made of a light-shielding material such as ceramic. The envelope 1 has a surrounding wall 2,
It consists of a bottom wall 3 and a partition 4, and is provided with a recess for a light emitting element and a recess for a light receiving element, which are open at the top and separated by the partition 4. A semiconductor light emitting element 6 is die-bonded onto a header 5 for mounting an element provided on the bottom surface of the light emitting element recess. The semiconductor light emitting device 6 is connected to a pad 8 via a bonding wire 7. Furthermore, a semiconductor light receiving element 10 is die-bonded onto the header 9 provided on the bottom surface of the light receiving element recess. The semiconductor light receiving element 10 is connected to a pad 12 via a bonding wire 11. Leads 13 connected to each ladder and pad extend downward from the bottom wall 3 of the envelope. Both pixel element portions are sealed with a transparent epoxy resin layer 14.

上記の光結合半導体装置では、半導体発光素子6から発
射された光が物体に反射され、この反射光を受光素子1
0が検出することによりセンサーとして機能するもので
ある。
In the optically coupled semiconductor device described above, light emitted from the semiconductor light emitting element 6 is reflected by an object, and this reflected light is transmitted to the light receiving element 1.
0 functions as a sensor by detecting it.

従来の反射光型光結合半導体装置の他の例を第6図〜第
8図に示す。この例では、第6図に示すように、まず二
組のヘッダおよびパッド5,8゜9.12を具備したリ
ードフレームを用い、夫々に半導体発光素子6および半
導体受光素子10のダイボンディング、ワイヤボンディ
ングを行なう。
Other examples of conventional reflective light type optically coupled semiconductor devices are shown in FIGS. 6 to 8. In this example, as shown in FIG. 6, first, a lead frame equipped with two sets of headers and pads 5, 8, 9, and 12 is used for die bonding and wire bonding of a semiconductor light emitting device 6 and a semiconductor light receiving device 10, respectively. Perform bonding.

続いて、第7図に示すように発光素子部および受光素子
部を夫々独立に透明なモールド樹脂層14゜14で封止
した後、第8図に示すようにその頂面を除く外側を遮光
性の樹脂モールド籍15で一体に成型する。
Next, as shown in FIG. 7, the light emitting element part and the light receiving element part are individually sealed with a transparent mold resin layer 14 14, and then the outside except for the top surface is shielded from light as shown in FIG. It is integrally molded using a synthetic resin mold 15.

〔背景技術の問題点〕[Problems with background technology]

第4図および第5図の従来例の場合、予め設けられた凹
部の中に発光素子6および受光素子10をマウントし、
更にワイヤボンディングを行なうから、各凹部には素子
を掴むコレットやワイヤボンディングを行なうキャピラ
リーがその中で充分に動けるスペースが必要である。こ
のため、装置の小型化が阻害される問題がある。また、
樹脂封止を行なう際に樹脂層14.14の表面が凹面と
なり、指向特性が低下する問題がある。
In the case of the conventional example shown in FIGS. 4 and 5, the light emitting element 6 and the light receiving element 10 are mounted in a recess provided in advance,
Furthermore, since wire bonding is to be performed, each recess must have sufficient space within which a collet for gripping the element and a capillary for performing wire bonding can move. Therefore, there is a problem that miniaturization of the device is hindered. Also,
When resin sealing is performed, the surface of the resin layer 14.14 becomes a concave surface, which causes a problem of deterioration of directivity.

他方、第6図〜第8図の従来例の場合には、一旦各素子
部を透明樹脂層14.14で独立に樹脂封止した後、更
に遮光性樹脂層15で一体成型しなければならないため
、工程が繁雑になる問題がある。また、透明樹脂層14
.14と遮光性樹脂層15との間の密着性が悪いため、
信頼性の点で問題がある。更に、二回目の樹脂モールド
を行なう分だけ外囲器の構造が大きくなる問題がある。
On the other hand, in the case of the conventional examples shown in FIGS. 6 to 8, each element portion must be individually resin-sealed with a transparent resin layer 14, 14 and then integrally molded with a light-shielding resin layer 15. Therefore, there is a problem that the process becomes complicated. In addition, the transparent resin layer 14
.. 14 and the light-shielding resin layer 15 is poor,
There are problems with reliability. Furthermore, there is a problem in that the structure of the envelope becomes larger due to the second resin molding.

〔発明の目的〕[Purpose of the invention]

本発明は上記事情に鑑みてなされたもので、装置の小型
化を達成でき、また製造工程の簡略化、更には信頼性の
向上を達成できる反射光型光結合半導体装置を提供する
ものである。
The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a reflective light type optically coupled semiconductor device that can achieve miniaturization of the device, simplify the manufacturing process, and further improve reliability. .

〔発明の概要〕[Summary of the invention]

本発明による反射光型光結合半導体装置は、夫々が別々
のヘッダ上にダイボンディングされ且つボンディングワ
イヤを介して夫々別々のパッドに接続された半導体発光
素子および半導体受光素子と、これら発光素子部および
受光素子部を一体に封止する単一の透明樹脂層と、前記
ヘッダおよびパッドの夫々から前記透明樹脂層の外方に
延出されたリードとを具備し、前記半導体発光素子がそ
の頂面の限られた領域のみから光を放射し、他のチップ
表面からは光を放射せず、且つ前記透明樹脂層の表面で
該樹脂層内部に反射した光が前記半導体受光素子に到達
しないように前記透明樹脂層の形状および前記両素子間
の距離を設定したことを特徴とするものである。
A reflected light type optically coupled semiconductor device according to the present invention includes a semiconductor light emitting element and a semiconductor light receiving element which are each die-bonded onto separate headers and connected to separate pads via bonding wires, and a light emitting element portion and a semiconductor light receiving element. The semiconductor light emitting element includes a single transparent resin layer that integrally seals a light receiving element portion, and leads extending from each of the header and the pad to the outside of the transparent resin layer. emit light only from a limited area of the chip, do not emit light from other chip surfaces, and prevent light reflected from the surface of the transparent resin layer into the resin layer from reaching the semiconductor light-receiving element. The present invention is characterized in that the shape of the transparent resin layer and the distance between the two elements are set.

本発明において、半導体発光素子がその頂面の限られた
領域のみから発光するようにするためには、例えばそれ
以外の発光素子表面を遮光性のコーティング躾で覆えば
よい。
In the present invention, in order for the semiconductor light-emitting element to emit light only from a limited area on its top surface, the other surface of the light-emitting element may be covered with a light-shielding coating, for example.

また、透明樹脂層表面で反射された光が受光素子に到達
しないようにするためには、発光素子からの光が透明樹
脂層表面に対して臨海角よりも大きくならないように発
光素子からの光の広がりを抑制し、且つ反射光が受光素
子に当らないように両素子間の距離を設定すればよい。
In addition, in order to prevent the light reflected from the surface of the transparent resin layer from reaching the light-receiving element, it is necessary to The distance between both elements may be set so as to suppress the spread of light and prevent reflected light from hitting the light receiving element.

上記本発明の装置では、第4図および第5図の従来例の
ような外囲器を用いないから、その場合の問題は全く生
じない。また、樹脂モールドは一回のみでよいから、第
6図〜第8図の従来例における問題も生じない。
Since the device of the present invention does not use an envelope like the conventional example shown in FIGS. 4 and 5, the problems in that case do not occur at all. Further, since the resin molding only needs to be done once, the problems of the conventional examples shown in FIGS. 6 to 8 do not occur.

〔発明の実施例〕[Embodiments of the invention]

第1図は本発明の一実施例になる反射光型光結合半導体
装置の断面図である。同図において、11.12はヘッ
ダである。ヘッダ11には半導体発光素子13がダイボ
ンディングされ、ヘッダ12には半導体受光素子14が
ダイボンディングされている。これら画素子13.14
は夫々図示しないAu等のボンディングワイヤを介して
夫々のパッド(図示せず)に接続されている。これらの
発光素子部および受光素子部は、単一の透明樹脂(15
で一体に封止されている。また、夫々のヘッダ11.1
2及びパッドからは図示しないり一ドが透明樹脂層15
の外方に延出されている。そして、前記半導体発光素子
13は、図示のようにその頂面の限定された領域のみか
ら光を放出するようになっている。加えて、発光素子1
3から透明樹脂層15の表面に入射する光の入射角が臨
界角θCよりも大きくならないように、発光素子13の
光の広がりが抑制されている。また、透明樹脂層15の
表面で反射した光が受光素子14に到達しないように、
画素子13.14間の距離がとられている。
FIG. 1 is a sectional view of a reflection type optically coupled semiconductor device according to an embodiment of the present invention. In the figure, 11 and 12 are headers. A semiconductor light-emitting element 13 is die-bonded to the header 11, and a semiconductor light-receiving element 14 is die-bonded to the header 12. These pixel elements 13.14
are connected to respective pads (not shown) via bonding wires such as Au (not shown). These light emitting element parts and light receiving element parts are made of a single transparent resin (15
It is sealed in one piece. Also, each header 11.1
2 and a transparent resin layer 15 (not shown) from the pad.
It extends outward. As shown in the figure, the semiconductor light emitting device 13 emits light only from a limited area of its top surface. In addition, light emitting element 1
The spread of light from the light emitting element 13 is suppressed so that the angle of incidence of the light that enters the surface of the transparent resin layer 15 from the light emitting element 13 does not become larger than the critical angle θC. In addition, to prevent the light reflected from the surface of the transparent resin layer 15 from reaching the light receiving element 14,
The distance between the pixel elements 13, 14 is maintained.

上記実施例の反射光型光結合半導体装置では、上記のよ
うに単一の透明樹脂層15で発光素子部および受光素子
部を封止しているが、両素子間の光伝達を防止している
から正常に動作することができる。
In the reflected light type optically coupled semiconductor device of the above embodiment, the light emitting element section and the light receiving element section are sealed with the single transparent resin layer 15 as described above, but light transmission between the two elements is prevented. It is possible to operate normally because of this.

そして、その製造に際しては、まず第2図で説明したの
と同様にして発光素子13および受光素子14のグイボ
ンディングを行なう。従って、第5図の従来例における
ような問題は生じず、装置の小型化を図ることができる
。また、その後は透明樹脂層15を形成するために一回
の樹脂モールドを行なうだけでよいから、第6図〜第8
図の従来例におけるような外囲器の大型化や、異なる樹
脂層間の密着性不良による信頼性低下の問題は回避され
る。更に、透明樹脂115はモールド成型により形成さ
れるから、第4図および第5図の従来例のように透明樹
脂層の表面が凹面になり、指向性が低下するようなこと
もない。
In manufacturing, first, the light emitting element 13 and the light receiving element 14 are bonded in the same manner as explained in FIG. 2. Therefore, problems like those in the conventional example shown in FIG. 5 do not occur, and the device can be made smaller. Further, since it is only necessary to carry out resin molding once to form the transparent resin layer 15 after that, as shown in FIGS.
This avoids problems such as an increase in the size of the envelope and a decrease in reliability due to poor adhesion between different resin layers, as in the conventional example shown in the figure. Furthermore, since the transparent resin 115 is formed by molding, there is no possibility that the surface of the transparent resin layer becomes concave and the directivity deteriorates as in the conventional examples shown in FIGS. 4 and 5.

第2図は本発明の他の実施例を示す断面図である。この
実施例では、透明樹脂層15の表面に発光素子部用およ
び受光素子部用の二つの凸レンズ部16.17を形成し
、装置の指向性を向上させたものである。
FIG. 2 is a sectional view showing another embodiment of the present invention. In this embodiment, two convex lens sections 16 and 17 for a light emitting element section and a light receiving element section are formed on the surface of the transparent resin layer 15 to improve the directivity of the device.

第3図は本発明の更に別お実施例を示す断面図で、発光
素子部および受光素子部の間で透明調脂!15の表面か
ら凹溝を形成し、該凹溝内に不透明な遮蔽物を埋め込ん
である。これにより、もし透明樹脂表面で発光素子13
からの光が反射された場合にも、その反射光が受光素子
14に到達して誤動作を生じるのを防止することができ
る。
FIG. 3 is a cross-sectional view showing yet another embodiment of the present invention, in which transparent fat adjustment is performed between the light emitting element section and the light receiving element section. A groove is formed from the surface of 15, and an opaque shield is embedded in the groove. With this, if the light emitting element 13 is on the transparent resin surface,
Even when light is reflected from the light receiving element 14, it is possible to prevent the reflected light from reaching the light receiving element 14 and causing malfunction.

なお、発光素子13の側面からも僅かに光が放出されて
しまう場合には、発光素子側に反射板を設けるのがよい
Note that if a small amount of light is also emitted from the side surface of the light emitting element 13, it is preferable to provide a reflecting plate on the side of the light emitting element.

(発明の効果〕 以上詳述したように、本発明による反射光型光結合半導
体装置は装置の小型化を達成でき、また製造工程の簡略
化、更には信頼性の向上を図ることができる等、顕著な
効果を奏するものである。
(Effects of the Invention) As detailed above, the reflective light type optically coupled semiconductor device according to the present invention can achieve miniaturization of the device, simplify the manufacturing process, and further improve reliability. , which has a remarkable effect.

【図面の簡単な説明】[Brief explanation of drawings]

第1図〜第3図は夫々本発明の実施例を示す断面図、第
4図は従来の反射光型光結合半導体装置の一例を示す斜
視図であり、第5図は第4図V−V線に沿う断面図、第
6図〜第8図は従来の反射光型光結合半導体装置の他の
例を示す説明図である。 11.12・・・ヘッダ、13・・・半導体発光素子、
14・・・半導体受光素子、15・・・透明樹脂層、1
6゜17・・・凸レンズ部、18・・・遮蔽物層。 出願人代理人 弁理士 鈴江武彦 第1図 第2図 第6図 117  図 第8図
1 to 3 are cross-sectional views showing embodiments of the present invention, FIG. 4 is a perspective view showing an example of a conventional reflective light type optically coupled semiconductor device, and FIG. 6 to 8 are explanatory diagrams showing other examples of the conventional reflective light type optically coupled semiconductor device. 11.12... Header, 13... Semiconductor light emitting element,
14... Semiconductor light receiving element, 15... Transparent resin layer, 1
6゜17... Convex lens portion, 18... Shielding layer. Applicant's agent Patent attorney Takehiko Suzue Figure 1 Figure 2 Figure 6 Figure 117 Figure 8

Claims (1)

【特許請求の範囲】[Claims] 夫々が別々のヘッダ上にダイボンディングされ且つボン
ディングワイヤを介して夫々別々パッドに接続された半
導体発光素子および半導体受光素子と、これら発光素子
部および受光素子部を一体に封止する単一の透明樹脂層
と、前記ヘッダおよびパッドの夫々から前記透明樹脂層
の外方に延出されたリードとを具備し、前記半導体発光
素子がその頂面の限られた領域のみから光を放射し、他
のチップ表面からは光を放射せず、且つ前記透明樹脂層
の表面で該樹脂層内部に反射した光が前記半導体受光素
子に到達しないように前記透明樹脂層の形状および前記
両素子間の距離を設定したことを特徴とする反射光型光
結合半導体装置。
A semiconductor light-emitting element and a semiconductor light-receiving element each die-bonded onto separate headers and connected to separate pads via bonding wires, and a single transparent element that integrally seals the light-emitting element part and the light-receiving element part. a resin layer, and leads extending from each of the header and the pad to the outside of the transparent resin layer, the semiconductor light emitting element emits light only from a limited area of its top surface; The shape of the transparent resin layer and the distance between the two elements are determined so that no light is emitted from the chip surface and the light reflected inside the resin layer from the surface of the transparent resin layer does not reach the semiconductor light receiving element. What is claimed is: 1. A reflective light type optically coupled semiconductor device, characterized in that:
JP60216562A 1985-09-30 1985-09-30 Reflected-light type light-coupled semiconductor device Pending JPS6276684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60216562A JPS6276684A (en) 1985-09-30 1985-09-30 Reflected-light type light-coupled semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60216562A JPS6276684A (en) 1985-09-30 1985-09-30 Reflected-light type light-coupled semiconductor device

Publications (1)

Publication Number Publication Date
JPS6276684A true JPS6276684A (en) 1987-04-08

Family

ID=16690371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60216562A Pending JPS6276684A (en) 1985-09-30 1985-09-30 Reflected-light type light-coupled semiconductor device

Country Status (1)

Country Link
JP (1) JPS6276684A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008028025A (en) * 2006-07-19 2008-02-07 Canon Inc Reflecting sensor
JP2013070078A (en) * 2012-11-21 2013-04-18 Canon Inc Reflection type sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008028025A (en) * 2006-07-19 2008-02-07 Canon Inc Reflecting sensor
US7622698B2 (en) 2006-07-19 2009-11-24 Canon Kabushiki Kaisha Detection head
JP2013070078A (en) * 2012-11-21 2013-04-18 Canon Inc Reflection type sensor

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