JP3437709B2 - Three-dimensional wiring type optical coupling device and reflection type optical coupling device - Google Patents

Three-dimensional wiring type optical coupling device and reflection type optical coupling device

Info

Publication number
JP3437709B2
JP3437709B2 JP09431696A JP9431696A JP3437709B2 JP 3437709 B2 JP3437709 B2 JP 3437709B2 JP 09431696 A JP09431696 A JP 09431696A JP 9431696 A JP9431696 A JP 9431696A JP 3437709 B2 JP3437709 B2 JP 3437709B2
Authority
JP
Japan
Prior art keywords
bonding
coupling device
light
optical coupling
step portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP09431696A
Other languages
Japanese (ja)
Other versions
JPH09283790A (en
Inventor
保裕 藤方
知和 北嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP09431696A priority Critical patent/JP3437709B2/en
Publication of JPH09283790A publication Critical patent/JPH09283790A/en
Application granted granted Critical
Publication of JP3437709B2 publication Critical patent/JP3437709B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Landscapes

  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、立体配線で構成さ
れ、面実装タイプの光結合素子を搭載する立体配線型光
結合装置及び反射型光結合装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a three-dimensional wiring type optical coupling device and a reflection type optical coupling device which are composed of three-dimensional wiring and mount a surface mounting type optical coupling element.

【0002】[0002]

【従来の技術】従来の反射型光結合装置としては、例え
ば図5に示すように、樹脂成型された光不透過性樹脂の
立体配線部材101の2か所の凹部底面に発光素子10
2と受光素子103がそれぞれ配置され、それら発光素
子102と受光素子103を光透過性樹脂104で封止
したものが、一般的に知られている。
2. Description of the Related Art As a conventional reflection type optical coupling device, for example, as shown in FIG. 5, a light emitting element 10 is provided on the bottom surface of two recesses of a three-dimensional wiring member 101 made of resin-molded light-impermeable resin.
It is generally known that the light emitting element 102 and the light receiving element 103 are respectively arranged and the light emitting element 102 and the light receiving element 103 are sealed with a light transmissive resin 104.

【0003】そして、この反射型光結合装置の発光素子
102より出力された光信号は、装置上方に設置された
反射板(アルミ蒸着面や、白紙、白色プラスチック等)
105に反射し、受光素子103へ伝搬する。
The optical signal output from the light emitting element 102 of the reflection type optical coupling device is a reflection plate (aluminum vapor deposition surface, white paper, white plastic, etc.) installed above the device.
The light is reflected by 105 and propagates to the light receiving element 103.

【0004】図6(a),(b)は、上記従来の反射型
光結合装置の具体的構造を示す図であり、同図(a)は
その斜視図、同図(b)は断面図である。
FIGS. 6 (a) and 6 (b) are views showing a concrete structure of the conventional reflection type optical coupling device, FIG. 6 (a) is a perspective view thereof, and FIG. 6 (b) is a sectional view thereof. Is.

【0005】この反射型光結合装置は、同一面に2か所
の凹部を有する形で樹脂成型された光不透過性の立体配
線部材201を備えている。そして、この立体配線部材
201における2か所の凹部には、それぞれ2つの電極
配線202,203と204,205が多重メッキ層で
敷設されている。
This reflection type optical coupling device is provided with a light impermeable three-dimensional wiring member 201 which is resin-molded so as to have two concave portions on the same surface. Then, two electrode wirings 202, 203 and 204, 205 are laid with a multi-plated layer in the two concave portions of the three-dimensional wiring member 201, respectively.

【0006】これら電極配線202,203と204,
205は、図6(b)に示すように、立体配線部材20
1の凹部の裏面一部から該凹部の外壁及び内壁を通して
その底面まで敷設され、そのうち一方の電極配線20
2,204は、凹部底面において素子チップをマウント
し得る程度の面積で敷設され、他方の電極配線203,
205は、素子チップの表面電極からワイヤで導通がと
れる程度の面積で敷設されている。
These electrode wirings 202, 203 and 204,
Reference numeral 205 denotes a three-dimensional wiring member 20 as shown in FIG.
One of the electrode wirings 20 is laid from a part of the back surface of the concave portion 1 to the bottom surface through the outer wall and the inner wall of the concave portion.
2, 204 are laid on the bottom surface of the recess with an area large enough to mount the element chip, and the other electrode wiring 203,
205 is laid in such an area that a wire can be connected to the surface electrode of the element chip.

【0007】そして、電極配線202と204には、前
記素子チップとしてそれぞれ発光素子206と受光素子
207が導電性接着剤(Agペースト)207aにより
マウントされている。発光素子206の表面電極はボン
ディングワイヤ208を介して電極配線203に接続さ
れ、受光素子207の表面電極はボンディングワイヤ2
09を介して電極配線205に接続されている。このワ
イヤボンディングは、例えばネイルヘッド法を用いて行
われ、発光素子206及び受光素子207の表面電極と
の接点を第1ボンディング部とし、電極配線203及び
205との接点を第2ボンディング部とするものであ
る。
A light emitting element 206 and a light receiving element 207 are mounted on the electrode wirings 202 and 204 as the element chips by a conductive adhesive (Ag paste) 207a. The surface electrode of the light emitting element 206 is connected to the electrode wiring 203 via the bonding wire 208, and the surface electrode of the light receiving element 207 is the bonding wire 2
It is connected to the electrode wiring 205 via 09. This wire bonding is performed by using, for example, a nail head method, and the contacts with the surface electrodes of the light emitting element 206 and the light receiving element 207 are used as the first bonding portion, and the contacts with the electrode wirings 203 and 205 are used as the second bonding portion. It is a thing.

【0008】そして、立体配線部材201の各凹部は、
光透過性樹脂210によって封止されている。
Then, each recess of the three-dimensional wiring member 201 is
It is sealed with a light transmissive resin 210.

【0009】[0009]

【発明が解決しようとする課題】しかしながら、上記図
6に示す構造の反射型光結合装置では、次のような問題
点があった。
However, the reflection type optical coupling device having the structure shown in FIG. 6 has the following problems.

【0010】(1)ボンディングワイヤを使用してチッ
プ206,207の表面電極とメッキの電極配線20
3,205とをそれぞれ接続しているが、チップの高さ
分だけ下側にワイヤの接点(第2ボンディング部)があ
るため、ワイヤのループが非常に高くなる(チップ厚の
2倍程度:約0.6mm)。このような高いループをも
って第2ボンディング部にボンディンクツールを打ち降
ろすため、第2ボンディング部には比較的広い面積が必
要となる。加えて、第2ボンディング部からチップの端
までの距離も自ずと長くなる。このため、小サイズが要
求される反射型光結合装置に対して縮小面での限界があ
った。さらに、チップ206,207を封止する際には
光透過性樹脂を注入するが、その注入量によっては表面
張力のために凹部の中央部が窪むことがあり、上記のよ
うにワイヤのループが高いとボンディングワイヤが露出
する恐れがあった。
(1) Surface electrodes of chips 206 and 207 and electrode wiring 20 of plating using bonding wires
3 and 205 are connected to each other, but the wire loop (the second bonding portion) is located on the lower side by the height of the chip, and therefore the wire loop becomes extremely high (about twice the chip thickness: About 0.6 mm). Since the bonding tool is lowered onto the second bonding portion with such a high loop, the second bonding portion requires a relatively large area. In addition, the distance from the second bonding portion to the edge of the chip naturally increases. For this reason, there is a limit in terms of reduction with respect to the reflection type optical coupling device that requires a small size. Further, when the chips 206 and 207 are sealed, a light-transmissive resin is injected. However, depending on the injection amount, the central portion of the recess may be dented due to surface tension. If it is high, the bonding wire may be exposed.

【0011】(2)メッキ範囲のバラツキなどから、特
に電極配線203,205における第2ボンディング部
のエリアが極端に小さくなった場合、ボンディングツー
ルを打ち降ろせなかったり、また打ち下ろせるとしても
位置調整を必要としていた。そのため、製品組み立ての
収率が悪化すると共に、組み立て調整による調整時間分
のコスト高などが問題となっていた。
(2) Due to variations in the plating range and the like, especially when the area of the second bonding portion in the electrode wirings 203 and 205 becomes extremely small, the bonding tool cannot be moved down, or even if it can be moved down, the position adjustment is performed. I needed it. As a result, the yield of product assembly is deteriorated, and the cost for adjustment time due to assembly adjustment is high.

【0012】(3)凹部底面におけるメッキ部分の間
隙、つまりマウント側の電極配線と第2ボンディング部
側の電極配線との間隙が狭い場合には、実使用時にチッ
プに印加される電圧によって、チップのマウントに用い
られたAgペーストのAg原子がイオン化して電界に乗
って移動する現象(Agマイグレーション)が発生する
ことがある。すなわち、上記の同一底面での電極分離の
場合は、特に受光素子207にバイアス電圧を印加する
ことが多く、例えば長期的に水分が侵入したAgペース
ト207a上の受光素子207にバイアス電圧を印加す
ることによりAgイオンが遊離を起こし、両電極配線2
04,205間がショートする恐れがあった。
(3) If the gap between the plated portions on the bottom surface of the recess, that is, the gap between the electrode wiring on the mount side and the electrode wiring on the second bonding portion side is narrow, the voltage applied to the chip during actual use may cause In some cases, a phenomenon in which Ag atoms of the Ag paste used for mounting are ionized and move along with an electric field (Ag migration). That is, in the case of electrode separation on the same bottom surface, a bias voltage is often applied to the light receiving element 207 in particular, and for example, a bias voltage is applied to the light receiving element 207 on the Ag paste 207a where moisture has penetrated for a long time. As a result, Ag ions are released, and both electrode wirings 2
There was a risk of a short circuit between 04 and 205.

【0013】本発明は、上述の如き従来の問題点を解決
するためになされたもので、その目的は、ボンディング
ワイヤのループを低くしてその露出を防止すると共に小
型化を可能にする立体配線型光結合装置及び反射型光結
合装置を提供することである。またその他の目的は、ボ
ンディング位置調整を不要にして低コスト化と製品組み
立ての収率の改善を可能にする立体配線型光結合装置及
び反射型光結合装置を提供することである。さらに、そ
の他の目的は、マイグレーションによる不良発生を未然
に回避することができる立体配線型光結合装置及び反射
型光結合装置を提供することである。
The present invention has been made in order to solve the above-mentioned conventional problems, and an object thereof is to reduce the loop of the bonding wire to prevent its exposure and to realize a three-dimensional wiring capable of downsizing. Type optical coupling device and reflective type optical coupling device. Another object of the present invention is to provide a three-dimensional wiring type optical coupling device and a reflection type optical coupling device which can reduce the cost and improve the yield of product assembly by eliminating the need for adjusting the bonding position. Further, another object is to provide a three-dimensional wiring type optical coupling device and a reflection type optical coupling device which can avoid occurrence of defects due to migration.

【0014】[0014]

【課題を解決するための手段】上記目的を達成するため
に、第1の発明である立体配線型光結合装置の特徴は、
同一面に少なくとも1か所以上の凹部を有し樹脂成型に
より形成された光不透過性部材の表面にボンディング用
電極配線を直接設けて成る立体配線部材と、前記凹部の
底面に配置された発光素子または受光素子とを備え、前
記発光素子または受光素子の表面電極と前記ボンディン
グ用電極配線とがボンディングワイヤで接続され、且つ
光透過性樹脂で封止された立体配線型光結合装置におい
て、前記凹部の少なくとも一方の内壁側面に段差部を設
けると共に、前記ボンディング用電極配線を、前記凹部
の内壁側面を経て前記段差部の水平面を通しさらに該段
差部の垂直面の途中まで伸設し、前記段差部の水平面上
のボンディング用電極配線と前記発光素子または前記受
光素子の表面電極とをボンディングワイヤで接続し、前
記ボンディング用電極配線は、前記段差部の厚さを1と
した場合、該段差部の上端より、1/4から3/4まで
の範囲内まで該段差部の垂直面に沿って伸設したことに
ある。
In order to achieve the above object, the features of the three-dimensional wiring type optical coupling device of the first invention are as follows.
A three-dimensional wiring member in which bonding electrode wiring is directly provided on the surface of a light-impermeable member formed by resin molding and having at least one recessed portion on the same surface, and light emission disposed on the bottom surface of the recessed portion. In the three-dimensional wiring type optical coupling device comprising an element or a light receiving element, the surface electrode of the light emitting element or the light receiving element and the bonding electrode wiring are connected by a bonding wire, and sealed with a light transmitting resin, A step portion is provided on at least one inner wall side surface of the recess portion, and the bonding electrode wiring is extended through the inner wall side surface of the recess portion through the horizontal surface of the step portion and further extending to a midpoint of the vertical surface of the step portion, and a surface electrode of the bonding electrode wire and the light emitting element or the light receiving element on a horizontal surface of the step portion are connected by a bonding wire, before
In the bonding electrode wiring, the thickness of the step is set to 1
If you do, from the upper end of the step, from 1/4 to 3/4
That is , it extends along the vertical surface of the step portion to the range of .

【0015】この第1の発明によれば、第2ボンディン
グを段差部上で行うので、ボンディングワイヤのループ
が従来よりも低くなり、ワイヤの露出が回避される。さ
らに、第2ボンディング部からチップの端までの距離も
短くなり、装置の小型化が可能となる。また、ボンディ
ング用電極配線を、凹部の内壁側面を経て段差部の水平
面を通しさらに該段差部の垂直面の途中まで伸設したの
で、第2ボンディング部のエリアが拡大され、ボンディ
ング位置調整が不要となる。また、ボンディング用電極
配線は、前記段差部の厚さを1とした場合、該段差部の
上端より、1/4から3/4までの範囲内まで該段差部
の垂直面に沿って伸設したので、ボンディング面積を広
げることができると共に、端部のメッキの密着性を向上
させ、マイグレーションも回避できる。
According to the first aspect of the invention, since the second bonding is performed on the step portion, the loop of the bonding wire becomes lower than in the conventional case, and the wire is prevented from being exposed. Further, the distance from the second bonding portion to the end of the chip is shortened and the device can be downsized. In addition, since the bonding electrode wiring extends through the side surface of the inner wall of the recess through the horizontal surface of the step portion and further extends to the middle of the vertical surface of the step portion, the area of the second bonding portion is enlarged and the bonding position adjustment is unnecessary. Becomes Also, the bonding electrode
If the thickness of the step portion is 1, the wiring is
From the upper end to within the range of 1/4 to 3/4
Since it is extended along the vertical surface of the
It is possible to improve the adhesion of the end plating
And migration can be avoided.

【0016】第2の発明である立体配線型光結合装置の
特徴は、上記第1の発明において、前記立体配線部材
は、前記ボンディング用電極配線と、これに電気的に絶
縁されたマウント用電極配線とを前記光不透過性部材の
表面に直接設けて構成し、且つ前記光不透過性部材の凹
部底面の前記マウント用電極配線上に導電性接着剤で発
光素子または受光素子をマウントしたことにある。
A feature of the three-dimensional wiring type optical coupling device of the second invention is that, in the first invention, the three-dimensional wiring member includes the bonding electrode wiring and a mounting electrode electrically insulated from the bonding electrode wiring. Wirings are provided directly on the surface of the light opaque member, and a light emitting element or a light receiving element is mounted with a conductive adhesive on the mounting electrode wiring on the bottom surface of the recess of the light opaque member. It is in.

【0017】この第2の発明によれば、段差部上のボン
ディング用電極配線とマウント用電極配線との間の電界
の向きが水平でなくなるので、マイグレーションを回避
することができる。
According to the second aspect of the present invention, the electric field between the bonding electrode wiring and the mounting electrode wiring on the step portion is not in the horizontal direction, so that migration can be avoided.

【0018】[0018]

【0019】[0019]

【0020】第の発明である反射型光結合装置の特徴
は、同一面に第1及び第2の凹部を有し樹脂成型により
形成された光不透過性部材の表面に対して前記第1及び
第2の凹部にそれぞれ対応した第1及び第2のボンディ
ング用電極配線を直接設けて成る立体配線部材と、前記
第1及び第2の凹部の底面にそれぞれ配置された発光素
子及び受光素子とを備え、前記発光素子及び前記受光素
子の表面電極と前記1及び第2のボンディング用電極配
線とがそれぞれボンディングワイヤで接続されると共に
前記第1及び第2の凹部が光透過性樹脂で封止され、前
記発光素子の出力光を外部の反射板に反射させて前記受
光素子へ伝搬させる反射型光結合装置において、前記第
1の凹部は、少なくとも一方の内壁側面に第1の段差部
を設け、前記第1のボンディング用電極配線を、前記内
壁側面を経て前記第1の段差部の水平面を通しさらに該
第1の段差部の垂直面の途中まで伸設し、且つ前記第1
の段差部の水平面上の第1のボンディング用電極配線と
前記発光素子の表面電極とをボンディングワイヤで接続
して構成し、前記第2の凹部は、少なくとも一方の内壁
側面に第2の段差部を設け、前記第2のボンディング用
電極配線を、前記内壁側面を経て前記第2の段差部の水
平面を通しさらに該第2の段差部の垂直面の途中まで伸
設し、且つ前記第2の段差部の水平面上の第2のボンデ
ィング用電極配線と前記受光素子の表面電極とをボンデ
ィングワイヤで接続して構成し、前記第1及び第2のボ
ンディング用電極配線は、前記第1及び第2の段差部の
厚さを1とした場合、該第1及び第2の段差部各々の上
端より、1/4から3/4までの範囲内まで該段差部の
垂直面に沿ってそれぞれ伸設したことにある。
A third aspect of the reflective optical coupling device of the present invention is that the first and second concave portions are formed on the same surface with respect to the surface of the light opaque member formed by resin molding. And a three-dimensional wiring member formed by directly providing first and second bonding electrode wirings respectively corresponding to the second and second recesses, and a light emitting element and a light receiving element respectively disposed on the bottom surfaces of the first and second recesses. And the surface electrodes of the light emitting element and the light receiving element and the first and second bonding electrode wirings are respectively connected by bonding wires, and the first and second recesses are sealed with a light-transmissive resin. In the reflection type optical coupling device for reflecting the output light of the light emitting element to the external reflection plate and propagating it to the light receiving element, the first recess is provided with a first step portion on at least one inner wall side surface. , The first The bonding electrode wiring, and Shin設 to the middle of the vertical surface of the stepped portion of the further first through a horizontal plane of the first step portion through the inner wall side surface, and the first
The first bonding electrode wiring on the horizontal surface of the step portion and the surface electrode of the light emitting element are connected by a bonding wire, and the second recess is formed on at least one inner wall side surface of the second step portion. The second bonding electrode wiring is extended through the side surface of the inner wall, through the horizontal surface of the second step portion, to a midpoint of the vertical surface of the second step portion, and The second bonding electrode wiring on the horizontal surface of the step portion and the surface electrode of the light receiving element are connected by a bonding wire to form the first and second bonding wires.
The electrode wiring for bonding is formed on the first and second step portions.
When the thickness is 1, the thickness of each of the first and second step portions is increased.
From the edge, within the range of 1/4 to 3/4
It lies in that they were extended along the vertical plane .

【0021】この第の発明によれば、第1及び第2の
段差部上で第2ボンディングを行うので、第1及び第2
の凹部においてボンディングワイヤのループが従来より
も低くなり、ワイヤの露出が回避される。さらに、第2
ボンディング部から各チップの端までの距離も短くな
り、装置の小型化が可能となる。さらに、第1及び第2
の凹部において第2ボンディング部のエリアが拡大さ
れ、ボンディング位置調整が不要となる。また、ボンデ
ィング用電極配線は、前記段差部の厚さを1とした場
合、該段差部の上端より、1/4から3/4までの範囲
内まで該段差部の垂直面に沿って伸設したので、ボンデ
ィング面積を広げることができると共に、端部のメッキ
の密着性を向上させ、マイグレーションも回避できる。
According to the third aspect of the invention, the second bonding is performed on the first and second step portions, so that the first and second steps are performed.
The loop of the bonding wire becomes lower in the concave portion than in the conventional case, and the wire is prevented from being exposed. Furthermore, the second
The distance from the bonding portion to the end of each chip is also shortened, and the device can be downsized. Furthermore, the first and second
The area of the second bonding portion is enlarged in the concave portion, and the bonding position adjustment is unnecessary. Also bonde
If the thickness of the step is 1
Range from 1/4 to 3/4 from the top of the step
Since it was extended to the inside along the vertical surface of the step,
The plating area can be expanded and the end is plated.
It is possible to improve the adhesion and to avoid migration.

【0022】第の発明である反射型光結合装置の特徴
は、上記第3の発明において、前記立体配線部材は、前
記第1及び第2のボンディング用電極配線とこれに電気
的に絶縁された第1及び第2のマウント用電極配線とを
前記光不透過性部材の表面に直接設けて構成し、且つ導
電性接着剤により、前記第1の凹部底面の前記第1のマ
ウント用電極配線上に発光素子をマウントすると共に、
前記第2の凹部底面の前記第2のマウント用電極配線上
に受光素子をマウントしたことにある。
The reflection-type optical coupling device according to the fourth invention is characterized in that in the third invention, the three-dimensional wiring member is electrically insulated from the first and second bonding electrode wirings. And the first and second mounting electrode wirings are directly provided on the surface of the light opaque member, and the first mounting electrode wiring on the bottom surface of the first recess is formed by a conductive adhesive. While mounting the light emitting element on the top,
The light receiving element is mounted on the second mounting electrode wiring on the bottom surface of the second recess.

【0023】この第の発明によれば、第1及び第2の
凹部においてボンディング用電極配線とマウント用電極
配線との間の電界の向きが水平でなくなるので、マイグ
レーションを回避することができる。
According to the fourth aspect of the invention, since the electric field direction between the bonding electrode wiring and the mounting electrode wiring is not horizontal in the first and second recesses, migration can be avoided.

【0024】[0024]

【発明の実施の形態】以下、本発明の実施形態を図面に
基づいて説明する。図1(a),(b),(c)は、本
発明の第1実施形態に係る立体配線型光結合装置の構成
を示す図であり、同図(a)はその上面斜視図、同図
(b)は裏面斜視図、同図(c)は、受光素子側の断面
図である。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. 1A, 1B, and 1C are diagrams showing the configuration of a three-dimensional wiring type optical coupling device according to a first embodiment of the present invention, and FIG. 1A is a top perspective view of the same. FIG. 2B is a rear perspective view, and FIG. 1C is a cross-sectional view of the light receiving element side.

【0025】この立体配線型光結合装置は、パッケージ
として樹脂成型された光不透過性部材(例えばLCP:
液晶ポリマー)を主体とする立体配線部材1を備えてい
る。この立体配線部材1は、同一面に2か所の凹部1
a,1bを有すると共に、その各凹部1a,1bの内壁
側面の一方にそれぞれ段差部1c,1dが設けられた形
状を成し、裏面四隅(半田実装用の電極:図1(b)参
照)から引き回された多重メッキ層(下地Cu/中間N
i/表面Au)の電極配線2,3と4,5がそれぞれ前
記各凹部1a,1bの内部へ敷設された構造となってい
る。ここで、段差部1c,1dの高さは、例えばチップ
の高さとほぼ等しいものとし、その水平面の面積は、後
述するワイヤボンディングに支障を来さない程度になっ
ている。
In this three-dimensional wiring type optical coupling device, a light-impermeable member (eg LCP:
A three-dimensional wiring member 1 mainly composed of a liquid crystal polymer is provided. The three-dimensional wiring member 1 has two recesses 1 on the same surface.
The recesses 1a and 1b are formed, and the stepped portions 1c and 1d are provided on one of the inner wall side surfaces of the recesses 1a and 1b, respectively, and the four corners of the rear surface (solder mounting electrodes: see FIG. 1B) Multi-plated layer (Cu underlayer / intermediate N)
The electrode wirings 2, 3 and 4, 5 (i / surface Au) are laid inside the recesses 1a and 1b, respectively. Here, the height of the step portions 1c and 1d is set to be substantially equal to the height of the chip, for example, and the area of the horizontal plane is such that it does not hinder the wire bonding described later.

【0026】すなわち、電極配線3,5は、各凹部1
a,1bの内壁側面を経て段差部1c,1dの水平面を
通しさらに該段差部1c,1dの垂直面の途中まで伸設
され、電極配線2,4は、前記内壁側面の反対側の内壁
側面を経て各凹部1a,1bの底面途中まで伸設され、
その底面上ではチップをマウントし得る程度の面積とな
っている。
That is, the electrode wirings 3 and 5 have
The electrode wirings 2 and 4 extend through the horizontal surface of the step portions 1c and 1d through the side surfaces of the inner wall portions a and 1b, and further extend to the middle of the vertical surface of the step portions 1c and 1d. Via the bottom of each recess 1a, 1b
On the bottom surface, the area is large enough to mount a chip.

【0027】さらに、凹部1a,1bの底面上の電極配
線2と4には、前記チップとしてそれぞれ発光素子(例
えば赤外発光ダイオード)6と受光素子(例えばフォト
トランジスタ)7が導電性接着剤(Agペースト)7a
によってマウントされている。発光素子6の表面電極は
ボンディングワイヤ8を介して段差部1cの水平面上の
電極配線3に接続され、受光素子7の表面電極はボンデ
ィングワイヤ9を介して段差部1dの水平面上の電極配
線5に接続されている。
Further, a light emitting element (for example, infrared light emitting diode) 6 and a light receiving element (for example, phototransistor) 7 serving as the chips are respectively formed on the electrode wirings 2 and 4 on the bottom surfaces of the recesses 1a and 1b by a conductive adhesive ( Ag paste) 7a
Mounted by. The surface electrode of the light emitting element 6 is connected to the electrode wiring 3 on the horizontal surface of the step portion 1c via the bonding wire 8, and the surface electrode of the light receiving element 7 is connected to the electrode wiring 5 on the horizontal surface of the step portion 1d via the bonding wire 9. It is connected to the.

【0028】そして、立体配線部材1の各凹部1a,1
bは、光透過性樹脂(例えばエポキシ樹脂)10によっ
て封止されている。
The recesses 1a, 1 of the three-dimensional wiring member 1 are
b is sealed with a light transmissive resin (eg, epoxy resin) 10.

【0029】次に、上記構造の光結合装置の組み立て方
法を説明する。
Next, a method of assembling the optical coupling device having the above structure will be described.

【0030】始めに、立体配線部材1を作製すべく、ま
ず、金型に例えばLCPを注入し、2か所の凹部1a,
1bを有すると共に前記段差部1c,1dが設けられた
形状の光不透過性部材を成型する。そして、この光不透
過性部材の表面に、通常のメッキ工程によって電極配線
2〜5を敷設して、立体配線回路を形成する。このとき
のメッキ範囲(マスキング)は、光センサ用として相応
しいものにするため、前述のように、裏面から引き回さ
れた電極配線2〜5のうち電極配線3,5は、各凹部1
a,1bの内壁側面を経て段差部1c,1dの水平面を
通しさらにその垂直面の途中まで到達し、電極配線2,
4は、反対側の内壁側面を経て各凹部1a,1bの底面
途中まで到達するように設定する。
First, in order to manufacture the three-dimensional wiring member 1, first, for example, LCP is injected into a mold, and two recesses 1a,
A light-impermeable member having a shape including 1b and the step portions 1c and 1d is formed. Then, electrode wirings 2 to 5 are laid on the surface of this light opaque member by a normal plating process to form a three-dimensional wiring circuit. In order to make the plating range (masking) suitable for the optical sensor at this time, as described above, the electrode wirings 3 and 5 among the electrode wirings 2 to 5 routed from the back surface are the recesses 1
After passing through the side surfaces of the inner walls of a and 1b, passing through the horizontal surfaces of the stepped portions 1c and 1d, and reaching the middle of the vertical surface, the electrode wiring 2,
4 is set so as to reach the middle of the bottom surface of each recess 1a, 1b through the inner wall side surface on the opposite side.

【0031】また、立体配線部材1を大量生産するため
に、例えば光不透過性部材を行列状に並べた1枚の板状
の成型を行い、さらに同時にメッキ工程を施すようにす
る。
Further, in order to mass-produce the three-dimensional wiring member 1, for example, one plate-shaped member in which light-impermeable members are arranged in a matrix is formed, and at the same time, a plating process is performed.

【0032】このようにして作製された立体配線部材1
の各凹部1a,1b内の電極配線2,4に、それぞれ発
光素子6と受光素子7をAgペースト7aでマウントす
る。
The three-dimensional wiring member 1 produced in this way
The light emitting element 6 and the light receiving element 7 are mounted on the electrode wirings 2 and 4 in the recesses 1a and 1b, respectively, with the Ag paste 7a.

【0033】その後、発光素子6の表面電極と段差部1
c上の電極配線3とをボンディングワイヤ8を介して接
続すると同時に、受光素子7の表面電極と段差部1d上
の電極配線5とをボンディングワイヤ9を介して接続す
る。このワイヤボンディングは、例えばネイルヘッド法
を用いて行われ、発光素子6及び受光素子7の表面電極
との接点を第1ボンディング部とし、電極配線3,5と
の接点を第2ボンディング部とするものである。
After that, the surface electrode of the light emitting element 6 and the step portion 1
The electrode wiring 3 on c is connected via the bonding wire 8, and at the same time, the surface electrode of the light receiving element 7 and the electrode wiring 5 on the step portion 1d are connected via the bonding wire 9. This wire bonding is performed by using, for example, a nail head method, and the contact points with the surface electrodes of the light emitting element 6 and the light receiving element 7 are used as the first bonding section, and the contact points with the electrode wirings 3 and 5 are used as the second bonding section. It is a thing.

【0034】そして、立体配線部材1の各凹部1a,1
bに例えばエポキシ樹脂10を注入して加熱固化させれ
ば、上記構造の立体配線型光結合装置が得られる。
Then, the concave portions 1a, 1 of the three-dimensional wiring member 1 are formed.
By injecting, for example, the epoxy resin 10 into b and heating and solidifying it, the three-dimensional wiring type optical coupling device having the above structure is obtained.

【0035】なお、この装置を反射型光結合装置として
構成する場合は、図5に示した例で説明したように、外
部に反射板を設け、その反射板に発光素子6からの出力
光を反射させ、受光素子7へ伝搬させるようにする。
When this device is constructed as a reflection type optical coupling device, as described in the example shown in FIG. 5, a reflection plate is provided outside and the output light from the light emitting element 6 is provided on the reflection plate. The light is reflected and propagated to the light receiving element 7.

【0036】本実施形態は次のような利点を有してい
る。
This embodiment has the following advantages.

【0037】(1)ワイヤボンディングに際し、凹部1
a,1bの内壁側面にそれぞれ設けた段差部1c,1d
の水平面上の電極配線3,5に第2ボンデング部をとる
ようにしたので、ワイヤのループを低く抑えることがで
きる(例えば0.2mm程度)。これにより、チップ厚
と合わせてもワイヤの高さは0.5mm以下になるた
め、ワイヤの露出を回避することができる。
(1) Recess 1 at the time of wire bonding
Steps 1c and 1d provided on the side surfaces of the inner walls of a and 1b, respectively
Since the second bonding portion is provided on the electrode wirings 3 and 5 on the horizontal plane, the loop of the wire can be suppressed low (for example, about 0.2 mm). As a result, the height of the wire is 0.5 mm or less even when combined with the chip thickness, so that the wire can be prevented from being exposed.

【0038】(2)第1ボンディング部のチップ表面電
極から第2ボンディング部の段差部水平面上にボンディ
ングワイヤが張られるため、ワイヤが斜め45°でルー
プを張っているとした場合、ワイヤの長さをチップ厚分
(0.3mm)短縮することが可能となり、その結果、
装置の小型化を図ることができる。
(2) Since the bonding wire is stretched from the chip surface electrode of the first bonding portion to the horizontal surface of the step portion of the second bonding portion, when the wire is looped at an angle of 45 °, the length of the wire is It is possible to reduce the thickness by the chip thickness (0.3 mm), and as a result,
It is possible to reduce the size of the device.

【0039】(3)受光素子7にバイアス電圧を印加し
ても、段差部1d上の電極配線5と電極配線4との間の
電界の向きが水平でないため、Agペースト7aのAg
イオンの遊離が生じにくくなり、前述したマイグレーシ
ョンは回避することができる。
(3) Even if a bias voltage is applied to the light receiving element 7, since the direction of the electric field between the electrode wiring 5 and the electrode wiring 4 on the step portion 1d is not horizontal, Ag of the Ag paste 7a is Ag.
The release of ions is less likely to occur, and the migration described above can be avoided.

【0040】(4)電極配線3,5を、各凹部1a,1
bの内壁側面を経て段差部1c,1dの水平面を通しさ
らに該段差部1c,1dの垂直面の途中まで伸設したの
で(図2(a)参照)、組立て収率を格段に高めること
ができる。
(4) Connect the electrode wirings 3 and 5 to the recesses 1a and 1
Since the horizontal planes of the step portions 1c and 1d are passed through the side surface of the inner wall b, and the vertical surfaces of the step portions 1c and 1d are extended to the middle (see FIG. 2A), the assembly yield can be remarkably increased. it can.

【0041】この(4)の利点について以下具体的に説
明する。
The advantage of (4) will be specifically described below.

【0042】通常のメッキ工程においては、マスキング
精度によりメッキ範囲の正確さが決まるので、誤差のあ
るマスキングを行ったときには、段差部1c,1dの水
平面に十分なボンディングエリアを確保することができ
ない事態も生じ得る。そこで、ボンディングエリアを十
分に確保するために、段差部1c,1dの水平面の全域
にメッキを施すことも考えられるが、この場合は、端に
近い部分のメッキの密着性が問題となり、ボンディング
不良が危惧される。
In a normal plating process, since the accuracy of the plating range is determined by the masking accuracy, it is impossible to secure a sufficient bonding area on the horizontal surfaces of the step portions 1c and 1d when the masking with an error is performed. Can also occur. Therefore, in order to secure a sufficient bonding area, it is conceivable to perform plating on the entire horizontal surface of the stepped portions 1c and 1d, but in this case, the adhesion of the plating near the edge becomes a problem, and the bonding failure occurs. Is afraid.

【0043】それを回避すべく、図2(b)に示すよう
に段差部1dの淵を残して内側までメッキを施した場合
は、メッキ端の位置のバラツキにより、第2ボンディン
グを行う毎に位置調整が必要となる。そのため、作業性
が極めて悪く工程時間によるコスト高が顕著となる。
In order to avoid this, as shown in FIG. 2 (b), when plating is applied to the inner side leaving the edge of the step portion 1d, every time the second bonding is performed due to the variation in the position of the plated end. Position adjustment is required. Therefore, the workability is extremely poor and the cost increase due to the process time becomes remarkable.

【0044】これに対し、本実施形態では、段差部1
c,1dの水平面を通しさらにその垂直面の途中までメ
ッキを施すようにしたので、端部のメッキの密着性を向
上させると共に、段差部1c,1dの水平面上でのメッ
キエリアが拡大してメッキ端位置にバラツキが生ずると
いったことがなくなる。これにより、ボンディング位置
調整が不要となり、工程作業時間の約40%減が見込ま
れる。さらに、マイグレーションも回避される。
On the other hand, in this embodiment, the step portion 1
Since the plating is applied through the horizontal planes of c and 1d and to the middle of the vertical plane, the adhesion of the plating at the ends is improved and the plating area of the stepped portions 1c and 1d on the horizontal plane is enlarged. There is no variation in the plating end position. This eliminates the need for bonding position adjustment, and is expected to reduce process work time by about 40%. Furthermore, migration is also avoided.

【0045】ここで、上記メッキを上記垂直面のどの位
置まで持ってくるかであるが、上記段差部1c,1dの
厚さを1とすると上記段差部1c,1dの上端から1/
4から3/4までの範囲が適している。特に、上記段差
部1c,1dの上端から3/4の位置までメッキの先端
を持ってくるとマイグレーションが良く回避される。
Here, depending on to which position on the vertical surface the plating is brought, if the thickness of the step portions 1c and 1d is 1, then 1 / from the upper end of the step portions 1c and 1d.
A range of 4 to 3/4 is suitable. In particular, if the plating tip is brought from the upper ends of the stepped portions 1c and 1d to the position of 3/4, migration is well avoided.

【0046】図3(a),(b)は、本発明の第2実施
形態に係る立体配線型光結合装置の構成を示す図であ
り、同図(a)はその上面斜視図、同図(b)は裏面斜
視図であり、図1と共通する要素には同一の符号を付
し、その説明を省略する。
FIGS. 3 (a) and 3 (b) are views showing the structure of a three-dimensional wiring type optical coupling device according to a second embodiment of the present invention, and FIG. 3 (a) is a top perspective view and the same view. (B) is a rear perspective view, and elements common to those in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted.

【0047】本実施形態では、受光側の出力が多ピン化
(表面電極数が多数)した例を示すものである。多ピン
の出力を横一列に並べた場合では、ワイヤボンディング
の際にボンディングツールが隣のワイヤに触れないよう
に隣り合うメッキ間隔を十分とる必要があり、装置の小
型化に支障を来すことになる。そこで、本装置の構造的
特徴を生かして凹部内に段差部を各所に設け、ボンディ
ングワイヤを打ち分けることによって、多ピンタイプに
も小型化を実現し量産性を高めることができる。
The present embodiment shows an example in which the output on the light receiving side has multiple pins (the number of surface electrodes is large). If the outputs of multiple pins are arranged in a horizontal row, it is necessary to ensure a sufficient plating interval between adjacent bonding tools so that the bonding tool does not touch the adjacent wires during wire bonding, which hinders downsizing of the device. become. Therefore, by taking advantage of the structural characteristics of the present device, stepped portions are provided at various places in the recess and the bonding wires are separately punched, so that the multi-pin type can be downsized and mass productivity can be improved.

【0048】具体的な構造を説明する。この光結合装置
は、上記第1実施形態において、フォトダイオード(受
光素子)に代えて、3個の表面電極を有する受光IC7
−1を設置した例である。この受光IC7−1は裏面電
極を有しないタイプであるとする。
A specific structure will be described. In this optical coupling device, in the first embodiment, the light receiving IC 7 having three surface electrodes is used instead of the photodiode (light receiving element).
In this example, -1 is installed. This light receiving IC 7-1 is assumed to be of a type having no back electrode.

【0049】すなわち、この光結合装置の凹部1bの底
面には、3個の表面電極(電源電位Vcc,中間電位V
o,グランド電位GND)を有する受光IC7−1が直
接マウントされている。この凹部1bには、3個の表面
電極に対応して3個の段差部1d−1,1d−2,1d
−3が設けられ、段差部1d−1,1d−2は、一方の
内壁側面の各々の角部に、段差部1d−3は他方の内壁
側面に設けられている。
That is, three surface electrodes (power supply potential Vcc and intermediate potential Vcc) are formed on the bottom surface of the concave portion 1b of this optical coupling device.
o, the light receiving IC 7-1 having the ground potential GND) is directly mounted. In this concave portion 1b, three step portions 1d-1, 1d-2, 1d corresponding to the three surface electrodes are formed.
-3 is provided, and the step portions 1d-1 and 1d-2 are provided at respective corner portions of one inner wall side surface, and the step portion 1d-3 is provided on the other inner wall side surface.

【0050】そして、各段差部1d−1,1d−2,1
d−3も前記同様に水平面から垂直面に架けて、装置裏
面側から引き回された前記多重メッキ層の電極配線5−
1,5−2,5−3がそれぞれ敷設され、受光IC7−
1の各表面電極と、段差部1d−1〜1d−3の水平面
上の電極配線5−1〜5−3とが、それぞれボンディン
グワイヤ9−1〜9−3を介して接続されている。
Then, each stepped portion 1d-1, 1d-2, 1
Similarly to the above, d-3 is also laid from the horizontal plane to the vertical plane, and the electrode wiring 5- of the multiple plating layer is laid out from the back side of the device.
1, 5-2, 5-3 are laid respectively, and the light receiving IC 7-
Each surface electrode of No. 1 and the electrode wirings 5-1 to 5-3 on the horizontal plane of the stepped portions 1d-1 to 1d-3 are connected via bonding wires 9-1 to 9-3, respectively.

【0051】本実施形態のような多ピンタイプにも、小
型化を実現し量産性を高めることができ、しかも上記第
1実施形態と同様の利点を享受することができる。
Also in the multi-pin type as in this embodiment, miniaturization can be realized and mass productivity can be improved, and the same advantages as those of the first embodiment can be enjoyed.

【0052】図4(a),(b)は、本発明の第3実施
形態に係る立体配線型光結合装置の構成を示す図であ
り、同図(a)はその上面斜視図、同図(b)は裏面斜
視図であり、図1と共通する要素には同一の符号を付
し、その説明を省略する。
FIGS. 4A and 4B are views showing the structure of a three-dimensional wiring type optical coupling device according to the third embodiment of the present invention. FIG. 4A is a top perspective view of the same. (B) is a rear perspective view, and elements common to those in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted.

【0053】本実施形態も、上記第2実施形態と同様
に、受光側の出力が多ピン(表面電極数が多数)にわた
る例を示すものである。
This embodiment also shows an example in which the output on the light receiving side is multi-pin (the number of surface electrodes is large), as in the second embodiment.

【0054】この光結合装置は、上記第1実施形態にお
いて、フォトダイオード(受光素子)に代えて、4個の
表面電極を有する受光IC7−11(裏面電極を有しな
いタイプ)を設置した例である。この受光IC7−11
としては、例えばある一定周波数の光だけを信号として
感知する光変調型受光ICなどが挙げられる。
This optical coupling device is an example in which in the first embodiment, a light receiving IC 7-11 having four surface electrodes (a type having no back surface electrode) is installed in place of the photodiode (light receiving element). is there. This light receiving IC 7-11
For example, a light modulation type light receiving IC that senses only light of a certain constant frequency as a signal can be cited.

【0055】すなわち、この光結合装置の凹部1bに
は、4個の表面電極を有する受光IC7−11が直接マ
ウントされ、さらに4個の表面電極に対応して4個の段
差部1d−11,1d−12,1d−13,1d−14
が四隅に設けられている。
That is, the light receiving IC 7-11 having four surface electrodes is directly mounted in the concave portion 1b of this optical coupling device, and further four step portions 1d-11, corresponding to the four surface electrodes. 1d-12, 1d-13, 1d-14
Are provided in the four corners.

【0056】そして、各段差部1d−11〜1d−14
の表面には、装置裏面側から引き回された前記多重メッ
キ層の電極配線5−11〜5−14がそれぞれ敷設さ
れ、受光IC7−11の各表面電極と、段差部1d−1
1〜1d−14上の電極配線5−1〜5−4とがそれぞ
れボンディングワイヤ9−1〜9−4を介して接続され
ている。
Then, the step portions 1d-11 to 1d-14
The electrode wirings 5-11 to 5-14 of the multi-plated layer drawn from the back side of the device are laid on the front surface of the device, respectively, and the front surface electrodes of the light receiving IC 7-11 and the step portion 1d-1.
The electrode wirings 5-1 to 5-4 on the electrodes 1 to 1d-14 are connected via bonding wires 9-1 to 9-4, respectively.

【0057】本実施形態のような多ピンタイプにも、小
型化を実現し量産性を高めることができ、しかも上記第
1実施形態と同様の利点を享受することができる。
Also in the multi-pin type as in this embodiment, downsizing can be realized and mass productivity can be enhanced, and the same advantages as those of the first embodiment can be enjoyed.

【0058】[0058]

【発明の効果】以上詳細に説明したように、第1の発明
である立体配線型光結合装置によれば、ボンディングワ
イヤのループが従来よりも低くなるため、ボンディング
ワイヤの露出を防止することができる。さらに、第2ボ
ンディング部からチップの端までの距離も短くなるの
で、装置の小型化が可能となる。また、第2ボンディン
グ部のエリアが拡大されるので、ボンディング位置調整
が不要となる。これにより、低コスト化を可能とし、製
品組み立ての収率を改善することが可能になる。また、
ボンディング用電極配線は、前記段差部の厚さを1とし
た場合、該段差部の上端より、1/4から3/4までの
範囲内まで該段差部の垂直面に沿って伸設したので、ボ
ンディング面積を広げることができると共に、端部のメ
ッキの密着性を向上させ、マイグレーションも回避でき
る。
As described in detail above, according to the three-dimensional wiring type optical coupling device of the first invention, the loop of the bonding wire becomes lower than in the conventional case, and therefore the exposure of the bonding wire can be prevented. it can. Furthermore, since the distance from the second bonding portion to the edge of the chip is shortened, the device can be downsized. Further, since the area of the second bonding portion is enlarged, the bonding position adjustment is unnecessary. As a result, the cost can be reduced and the yield of product assembly can be improved. Also,
The thickness of the step portion of the bonding electrode wiring is 1
In the case of
Since it was extended along the vertical surface of the step to the range,
The area of the end can be expanded and the end
Improves the adhesion of the kick and avoids migration
It

【0059】第2の発明である立体配線型光結合装置に
よれば、上記第1の発明と同様の効果の他に、マイグレ
ーションによる不良発生を未然に回避することができ
る。
According to the three-dimensional wiring type optical coupling device of the second invention, in addition to the same effect as the first invention, it is possible to avoid the occurrence of defects due to migration.

【0060】第3の発明である反射型光結合装置によれ
ば、上記第1の発明と同様の効果を得ることができる。
According to the reflection type optical coupling device of the third invention, the same effect as that of the first invention can be obtained.

【0061】第4の発明である反射型光結合装置によれ
ば、上記第2の発明と同様の効果を得ることができる。
According to the reflection type optical coupling device of the fourth invention, the same effect as that of the second invention can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1実施形態に係る立体配線型光結合
装置の構成を示す図である。
FIG. 1 is a diagram showing a configuration of a three-dimensional wiring type optical coupling device according to a first embodiment of the present invention.

【図2】メッキ範囲とワイヤボンディングの良否を説明
するための図である。
FIG. 2 is a diagram for explaining the plating range and the quality of wire bonding.

【図3】本発明の第2実施形態に係る立体配線型光結合
装置の構成を示す図である。
FIG. 3 is a diagram showing a configuration of a three-dimensional wiring type optical coupling device according to a second embodiment of the present invention.

【図4】本発明の第3実施形態に係る立体配線型光結合
装置の構成を示す図である。
FIG. 4 is a diagram showing a configuration of a three-dimensional wiring type optical coupling device according to a third embodiment of the present invention.

【図5】従来の反射型光結合装置の機能を示す図であ
る。
FIG. 5 is a diagram showing a function of a conventional reflection type optical coupling device.

【図6】従来の立体配線型光結合装置の構成を示す図で
ある。
FIG. 6 is a diagram showing a configuration of a conventional three-dimensional wiring type optical coupling device.

【符号の説明】[Explanation of symbols]

1 立体配線部材 1a,1b 凹部 1c,1d 段差部 1d−1〜1d−3,1d−11〜1d−14 段差部 2〜5 電極配線 5−1〜5−3 電極配線 6 発光素子 7 受光素子 7−1,7−11 受光IC 7a Agペースト 8,9 ボンディングワイヤ 9−1〜9−3 ボンディングワイヤ 10 光透過性樹脂 1 Three-dimensional wiring member 1a, 1b recess 1c, 1d steps 1d-1 to 1d-3, 1d-11 to 1d-14 Step portion 2-5 electrode wiring 5-1-5-3 Electrode wiring 6 light emitting element 7 Light receiving element 7-1, 7-11 Light receiving IC 7a Ag paste 8,9 Bonding wire 9-1 to 9-3 Bonding wire 10 Light-transmissive resin

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平5−175553(JP,A) 特開 平6−45636(JP,A) 特開 平8−78457(JP,A) 特開 平7−15046(JP,A) 実開 平7−7159(JP,U) (58)調査した分野(Int.Cl.7,DB名) H01L 31/12 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-5-175553 (JP, A) JP-A-6-45636 (JP, A) JP-A-8-78457 (JP, A) JP-A-7- 15046 (JP, A) Actual Kaihei 7-7159 (JP, U) (58) Fields investigated (Int.Cl. 7 , DB name) H01L 31/12

Claims (4)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 同一面に少なくとも1か所以上の凹部を
有し樹脂成型により形成された光不透過性部材の表面に
ボンディング用電極配線を直接設けて成る立体配線部材
と、前記凹部の底面に配置された発光素子または受光素
子とを備え、前記発光素子または受光素子の表面電極と
前記ボンディング用電極配線とがボンディングワイヤで
接続され、且つ光透過性樹脂で封止された立体配線型光
結合装置において、 前記凹部の少なくとも一方の内壁側面に段差部を設ける
と共に、前記ボンディング用電極配線を、前記凹部の内
壁側面を経て前記段差部の水平面を通しさらに該段差部
の垂直面の途中まで伸設し、前記段差部の水平面上のボ
ンディング用電極配線と前記発光素子または前記受光素
子の表面電極とをボンディングワイヤで接続し、 前記ボンディング用電極配線は、前記段差部の厚さを1
とした場合、該段差部の上端より1/4から3/4まで
の範囲内まで該段差部の垂直面に沿って伸設した ことを
特徴とする立体配線型光結合装置。
1. A three-dimensional wiring member in which at least one recess is formed on the same surface and a bonding electrode wiring is directly provided on the surface of a light-impermeable member formed by resin molding, and a bottom surface of the recess. A three-dimensional wiring type light having a light emitting element or a light receiving element arranged in the light emitting element or the light receiving element, the surface electrode of the light emitting element or the light receiving element and the bonding electrode wiring are connected by a bonding wire, and sealed with a light transmitting resin. In the coupling device, a step portion is provided on the inner wall side surface of at least one of the recesses, and the bonding electrode wiring is passed through the inner wall side surface of the recess portion, through the horizontal surface of the step portion, and up to the middle of the vertical surface of the step portion. and Shin設to connect the surface electrode of the bonding electrode wire and the light emitting element or the light receiving element on a horizontal surface of the step portion by a bonding wire, the Bindings electrode wiring, the thickness of the stepped portion 1
If it is, from the upper end of the stepped portion to 1/4 to 3/4
A three-dimensional wiring type optical coupling device, characterized in that the optical coupling device extends along the vertical surface of the step portion up to the range .
【請求項2】 前記立体配線部材は、前記ボンディング
用電極配線と、これに電気的に絶縁されたマウント用電
極配線とを前記光不透過性部材の表面に直接設けて構成
し、且つ前記光不透過性部材の凹部底面の前記マウント
用電極配線上に導電性接着剤で発光素子または受光素子
をマウントしたことを特徴とする請求項1記載の立体配
線型光結合装置。
2. The three-dimensional wiring member is configured by directly providing the bonding electrode wiring and the mounting electrode wiring electrically insulated from the bonding electrode wiring on the surface of the light opaque member, and The three-dimensional wiring type optical coupling device according to claim 1, wherein a light emitting element or a light receiving element is mounted on the mounting electrode wiring on the bottom surface of the recess of the impermeable member with a conductive adhesive.
【請求項3】 同一面に第1及び第2の凹部を有し樹脂
成型により形成された光不透過性部材の表面に対して前
記第1及び第2の凹部にそれぞれ対応した第1及び第2
のボンディング用電極配線を直接設けて成る立体配線部
材と、前記第1及び第2の凹部の底面にそれぞれ配置さ
れた発光素子及び受光素子とを備え、前記発光素子及び
前記受光素子の表面電極と前記1及び第2のボンディン
グ用電極配線とがそれぞれボンディングワイヤで接続さ
れると共に前記第1及び第2の凹部が光透過性樹脂で封
止され、前記発光素子の出力光を外部の反射板に反射さ
せて前記受光素子へ伝搬させる反射型光結合装置におい
て、 前記第1の凹部は、 少なくとも一方の内壁側面に第1の段差部を設け、前記
第1のボンディング用電極配線を、前記内壁側面を経て
前記第1の段差部の水平面を通しさらに該第1の段差部
の垂直面の途中まで伸設し、且つ前記第1の段差部の水
平面上の第1のボンディング用電極配線と前記発光素子
の表面電極とをボンディングワイヤで接続して構成し、 前記第2の凹部は、 少なくとも一方の内壁側面に第2の段差部を設け、前記
第2のボンディング用電極配線を、前記内壁側面を経て
前記第2の段差部の水平面を通しさらに該第2の段差部
の垂直面の途中まで伸設し、且つ前記第2の段差部の水
平面上の第2のボンディング用電極配線と前記受光素子
の表面電極とをボンディングワイヤで接続して構成し 前記第1及び第2のボンディング用電極配線は、前記第
1及び第2の段差部の厚さを1とした場合、該第1及び
第2の段差部各々の上端より1/4から3/4までの範
囲内まで該段差部の垂直面に沿ってそれぞれ伸設した
とを特徴とする反射型光結合装置。
3. The first and second recesses corresponding to the first and second recesses, respectively, with respect to the surface of the light-impermeable member formed by resin molding and having the first and second recesses on the same surface. Two
And a light emitting element and a light receiving element respectively disposed on the bottom surfaces of the first and second recesses, and a surface electrode of the light emitting element and the light receiving element. The first and second bonding electrode wirings are connected to each other by bonding wires, and the first and second recesses are sealed with a light-transmitting resin, so that the output light of the light emitting element is transmitted to an external reflection plate. In the reflection type optical coupling device for reflecting and propagating to the light receiving element, the first concave portion is provided with a first step portion on at least one inner wall side surface, and the first bonding electrode wiring is provided on the inner wall side surface. Through the horizontal plane of the first step portion and further extending to a midpoint of the vertical plane of the first step portion, and the first bonding electrode wiring on the horizontal plane of the first step portion and the The second concave portion is provided with a second step portion on at least one inner wall side surface, and the second bonding electrode wiring is formed on the inner wall side surface. Through the horizontal surface of the second step portion and further extending to the middle of the vertical surface of the second step portion, and the second bonding electrode wiring on the horizontal surface of the second step portion and the light receiving portion. constituted by connecting the surface electrode of the element by a bonding wire, said first and second bonding electrode wiring, said first
When the thickness of the first and second step portions is 1, the first and second step portions are
The range from 1/4 to 3/4 from the upper end of each second step
A reflection type optical coupling device, characterized in that the reflection type optical coupling device is extended to the inside along the vertical surface of the step portion .
【請求項4】 前記立体配線部材は、前記第1及び第2
のボンディング用電極配線と、これに電気的に絶縁され
た第1及び第2のマウント用電極配線とを前記光不透過
性部材の表面に直接設けて構成し、且つ導電性接着剤に
より、前記第1の凹部底面の前記第1のマウント用電極
配線上に発光素子をマウントすると共に、前記第2の凹
部底面の前記第2のマウント用電極配線上に受光素子を
マウントしたことを特徴とする請求項記載の反射型光
結合装置。
4. The three-dimensional wiring member includes the first and second wiring members.
Of the bonding electrode wire and the first and second mounting electrode wires electrically insulated from the bonding electrode wire are directly provided on the surface of the light opaque member, and are formed by a conductive adhesive. The light emitting element is mounted on the first mounting electrode wiring on the bottom surface of the first recess, and the light receiving element is mounted on the second mounting electrode wiring on the bottom surface of the second recess. The reflective optical coupling device according to claim 3 .
JP09431696A 1996-04-16 1996-04-16 Three-dimensional wiring type optical coupling device and reflection type optical coupling device Expired - Fee Related JP3437709B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP09431696A JP3437709B2 (en) 1996-04-16 1996-04-16 Three-dimensional wiring type optical coupling device and reflection type optical coupling device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09431696A JP3437709B2 (en) 1996-04-16 1996-04-16 Three-dimensional wiring type optical coupling device and reflection type optical coupling device

Publications (2)

Publication Number Publication Date
JPH09283790A JPH09283790A (en) 1997-10-31
JP3437709B2 true JP3437709B2 (en) 2003-08-18

Family

ID=14106880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP09431696A Expired - Fee Related JP3437709B2 (en) 1996-04-16 1996-04-16 Three-dimensional wiring type optical coupling device and reflection type optical coupling device

Country Status (1)

Country Link
JP (1) JP3437709B2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4711483B2 (en) * 2000-01-11 2011-06-29 三洋電機株式会社 Manufacturing method of semiconductor device
JP2003110245A (en) * 2001-09-28 2003-04-11 Ibiden Co Ltd Substrate for packaging optic element and manufacturing method thereof, and optic element
JP4112505B2 (en) * 2004-01-14 2008-07-02 株式会社東芝 Optical microphone and manufacturing method thereof
JP2007288050A (en) * 2006-04-19 2007-11-01 Shinko Electric Ind Co Ltd Semiconductor device, and method for manufacturing same
JP2007299811A (en) * 2006-04-27 2007-11-15 Eudyna Devices Inc Stem for light-emitting element, semiconductor light-emitting device, and manufacturing method thereof
JP2006295215A (en) * 2006-07-11 2006-10-26 Toshiba Electronic Engineering Corp Semiconductor light emitting device
JP2008159942A (en) * 2006-12-25 2008-07-10 Matsushita Electric Works Ltd Sensor for detecting object
JP5196107B2 (en) * 2007-03-29 2013-05-15 日亜化学工業株式会社 Light emitting device
JP5985843B2 (en) * 2012-03-15 2016-09-06 ローム株式会社 Optical semiconductor device
JP6659377B2 (en) * 2016-01-25 2020-03-04 京セラ株式会社 Measurement sensor package and measurement sensor
JP6356746B2 (en) * 2016-08-04 2018-07-11 ローム株式会社 Optical semiconductor device
JPWO2022264980A1 (en) * 2021-06-14 2022-12-22

Also Published As

Publication number Publication date
JPH09283790A (en) 1997-10-31

Similar Documents

Publication Publication Date Title
US5177753A (en) Semi-conductor laser unit
JP3437709B2 (en) Three-dimensional wiring type optical coupling device and reflection type optical coupling device
JP3734017B2 (en) Optical module
US20020190391A1 (en) Semiconductor device
JP4117868B2 (en) Optical coupling element
JPH1093132A (en) Photocoupler
JPS622628A (en) Semiconductor device
JP3242476B2 (en) Optical semiconductor device
JP2524482B2 (en) QFP structure semiconductor device
JPH07147359A (en) Surface mounting type semiconductor device
JP3143351B2 (en) Reflective optical coupling device
US6310389B1 (en) Semiconductor package
JP2002359392A (en) Semiconductor relay
JP3493302B2 (en) Optical coupling device and manufacturing method thereof
JPH08146310A (en) Solid-state image pickup device
JPH0620159B2 (en) Method for manufacturing optical semiconductor device
JPH0645636A (en) Photodetection and light-emitting element and photodetection and light-emitting device utilizing it
JPS62247575A (en) Optical coupling element
JPH01287934A (en) Structure for mounting ic chip on flexible printed board
JP3489979B2 (en) MOS-FET output optical coupling device and method of manufacturing the same
JPH04268772A (en) Photocoupler
JPH0623002Y2 (en) Photo coupler
JP3130826B2 (en) Semiconductor device
JP2001326381A (en) Semiconductor relay
JPH0595018A (en) Manufacture of semiconductor device

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090606

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090606

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100606

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100606

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110606

Year of fee payment: 8

LAPS Cancellation because of no payment of annual fees