JPS6117154B2 - - Google Patents
Info
- Publication number
- JPS6117154B2 JPS6117154B2 JP14835478A JP14835478A JPS6117154B2 JP S6117154 B2 JPS6117154 B2 JP S6117154B2 JP 14835478 A JP14835478 A JP 14835478A JP 14835478 A JP14835478 A JP 14835478A JP S6117154 B2 JPS6117154 B2 JP S6117154B2
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- region
- gate
- drain
- type epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 26
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 230000007547 defect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- TVZRAEYQIKYCPH-UHFFFAOYSA-N 3-(trimethylsilyl)propane-1-sulfonic acid Chemical compound C[Si](C)(C)CCCS(O)(=O)=O TVZRAEYQIKYCPH-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14835478A JPS5574181A (en) | 1978-11-29 | 1978-11-29 | Preparing junction type field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14835478A JPS5574181A (en) | 1978-11-29 | 1978-11-29 | Preparing junction type field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5574181A JPS5574181A (en) | 1980-06-04 |
| JPS6117154B2 true JPS6117154B2 (OSRAM) | 1986-05-06 |
Family
ID=15450875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14835478A Granted JPS5574181A (en) | 1978-11-29 | 1978-11-29 | Preparing junction type field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5574181A (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63131848A (ja) * | 1986-11-20 | 1988-06-03 | Takara Co Ltd | 玩具用エンジンシリンダの内面処理方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2800753B2 (ja) * | 1996-01-30 | 1998-09-21 | 日本電気株式会社 | 接合型電界効果トランジスタの製造方法 |
| JPH10340885A (ja) * | 1997-06-06 | 1998-12-22 | Tokai Rika Co Ltd | シリコン基板における陽極化成方法 |
-
1978
- 1978-11-29 JP JP14835478A patent/JPS5574181A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63131848A (ja) * | 1986-11-20 | 1988-06-03 | Takara Co Ltd | 玩具用エンジンシリンダの内面処理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5574181A (en) | 1980-06-04 |
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