JPS6117153B2 - - Google Patents
Info
- Publication number
- JPS6117153B2 JPS6117153B2 JP3956978A JP3956978A JPS6117153B2 JP S6117153 B2 JPS6117153 B2 JP S6117153B2 JP 3956978 A JP3956978 A JP 3956978A JP 3956978 A JP3956978 A JP 3956978A JP S6117153 B2 JPS6117153 B2 JP S6117153B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate
- drain
- semiconductor layer
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 26
- 230000005669 field effect Effects 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 25
- 238000009826 distribution Methods 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 description 22
- 239000010408 film Substances 0.000 description 15
- 150000002500 ions Chemical class 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 238000002955 isolation Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- -1 Then Chemical compound 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 241001034604 Cetengraulis edentulus Species 0.000 description 1
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3956978A JPS54131881A (en) | 1978-04-03 | 1978-04-03 | Junction-type field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3956978A JPS54131881A (en) | 1978-04-03 | 1978-04-03 | Junction-type field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54131881A JPS54131881A (en) | 1979-10-13 |
| JPS6117153B2 true JPS6117153B2 (ko) | 1986-05-06 |
Family
ID=12556698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3956978A Granted JPS54131881A (en) | 1978-04-03 | 1978-04-03 | Junction-type field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54131881A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008091699A (ja) | 2006-10-03 | 2008-04-17 | Furukawa Electric Co Ltd:The | 半導体トランジスタの製造方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4364072A (en) * | 1978-03-17 | 1982-12-14 | Zaidan Hojin Handotai Kenkyu Shinkokai | Static induction type semiconductor device with multiple doped layers for potential modification |
| JPS554912A (en) * | 1978-06-26 | 1980-01-14 | Hitachi Ltd | Fieldeffect lateral transistor |
-
1978
- 1978-04-03 JP JP3956978A patent/JPS54131881A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008091699A (ja) | 2006-10-03 | 2008-04-17 | Furukawa Electric Co Ltd:The | 半導体トランジスタの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54131881A (en) | 1979-10-13 |
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