JPS6116731B2 - - Google Patents

Info

Publication number
JPS6116731B2
JPS6116731B2 JP53030790A JP3079078A JPS6116731B2 JP S6116731 B2 JPS6116731 B2 JP S6116731B2 JP 53030790 A JP53030790 A JP 53030790A JP 3079078 A JP3079078 A JP 3079078A JP S6116731 B2 JPS6116731 B2 JP S6116731B2
Authority
JP
Japan
Prior art keywords
anode
ions
silicon oxide
silicon
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53030790A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54122697A (en
Inventor
Juji Okuto
Momoko Furumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP3079078A priority Critical patent/JPS54122697A/ja
Publication of JPS54122697A publication Critical patent/JPS54122697A/ja
Publication of JPS6116731B2 publication Critical patent/JPS6116731B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
JP3079078A 1978-03-16 1978-03-16 Method and apparatus for forming silicon oxide ion Granted JPS54122697A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3079078A JPS54122697A (en) 1978-03-16 1978-03-16 Method and apparatus for forming silicon oxide ion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3079078A JPS54122697A (en) 1978-03-16 1978-03-16 Method and apparatus for forming silicon oxide ion

Publications (2)

Publication Number Publication Date
JPS54122697A JPS54122697A (en) 1979-09-22
JPS6116731B2 true JPS6116731B2 (enExample) 1986-05-01

Family

ID=12313461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3079078A Granted JPS54122697A (en) 1978-03-16 1978-03-16 Method and apparatus for forming silicon oxide ion

Country Status (1)

Country Link
JP (1) JPS54122697A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59116192A (ja) * 1982-12-21 1984-07-04 Fujitsu Ltd 分子線結晶成長方法
JPS59217332A (ja) * 1983-05-24 1984-12-07 Mitsubishi Electric Corp 二酸化硅素膜の製造方法
WO1987002026A1 (fr) * 1984-05-28 1987-04-09 Shuhara Akira Procede de production d'un film a base de bioxyde de silicium

Also Published As

Publication number Publication date
JPS54122697A (en) 1979-09-22

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