JPS61164285A - 埋め込み構造半導体レ−ザの製造方法 - Google Patents
埋め込み構造半導体レ−ザの製造方法Info
- Publication number
- JPS61164285A JPS61164285A JP543585A JP543585A JPS61164285A JP S61164285 A JPS61164285 A JP S61164285A JP 543585 A JP543585 A JP 543585A JP 543585 A JP543585 A JP 543585A JP S61164285 A JPS61164285 A JP S61164285A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor laser
- buried structure
- growth
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 12
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 10
- 230000007547 defect Effects 0.000 abstract description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 43
- 238000005253 cladding Methods 0.000 description 13
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP543585A JPS61164285A (ja) | 1985-01-16 | 1985-01-16 | 埋め込み構造半導体レ−ザの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP543585A JPS61164285A (ja) | 1985-01-16 | 1985-01-16 | 埋め込み構造半導体レ−ザの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61164285A true JPS61164285A (ja) | 1986-07-24 |
| JPH0580836B2 JPH0580836B2 (enrdf_load_html_response) | 1993-11-10 |
Family
ID=11611115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP543585A Granted JPS61164285A (ja) | 1985-01-16 | 1985-01-16 | 埋め込み構造半導体レ−ザの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61164285A (enrdf_load_html_response) |
-
1985
- 1985-01-16 JP JP543585A patent/JPS61164285A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0580836B2 (enrdf_load_html_response) | 1993-11-10 |
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