JPS61163279A - Ｃｖｄ装置 - Google Patents

Ｃｖｄ装置

Info

Publication number
JPS61163279A
JPS61163279A JP162785A JP162785A JPS61163279A JP S61163279 A JPS61163279 A JP S61163279A JP 162785 A JP162785 A JP 162785A JP 162785 A JP162785 A JP 162785A JP S61163279 A JPS61163279 A JP S61163279A
Authority
JP
Japan
Prior art keywords
reactor core
core pipe
wafer
inert gas
pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP162785A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0465146B2 (fr
Inventor
Atsuji Matsuwaka
松若　敦二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP162785A priority Critical patent/JPS61163279A/ja
Publication of JPS61163279A publication Critical patent/JPS61163279A/ja
Publication of JPH0465146B2 publication Critical patent/JPH0465146B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
JP162785A 1985-01-09 1985-01-09 Ｃｖｄ装置 Granted JPS61163279A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP162785A JPS61163279A (ja) 1985-01-09 1985-01-09 Ｃｖｄ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP162785A JPS61163279A (ja) 1985-01-09 1985-01-09 Ｃｖｄ装置

Publications (2)

Publication Number Publication Date
JPS61163279A true JPS61163279A (ja) 1986-07-23
JPH0465146B2 JPH0465146B2 (fr) 1992-10-19

Family

ID=11506771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP162785A Granted JPS61163279A (ja) 1985-01-09 1985-01-09 Ｃｖｄ装置

Country Status (1)

Country Link
JP (1) JPS61163279A (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG90249A1 (en) * 2000-07-22 2002-07-23 Ips Ltd Atomic layer deposition (ald) thin film deposition equipment having cleaning apparatus and cleaning method
SG90250A1 (en) * 2000-06-24 2002-07-23 Ips Ltd Apparatus and method for depositing thin film on wafer using atomic layer deposition
WO2016190006A1 (fr) * 2015-05-26 2016-12-01 株式会社日本製鋼所 Dispositif de croissance de couche atomique, et partie échappement de dispositif de croissance de couche atomique
WO2016190007A1 (fr) * 2015-05-26 2016-12-01 株式会社日本製鋼所 Dispositif de croissance de couche atomique par plasma
US10508338B2 (en) 2015-05-26 2019-12-17 The Japan Steel Works, Ltd. Device for atomic layer deposition
US10633737B2 (en) 2015-05-26 2020-04-28 The Japan Steel Works, Ltd. Device for atomic layer deposition

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5358487A (en) * 1976-11-08 1978-05-26 Hitachi Ltd Decompressive gas phase reaction apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5358487A (en) * 1976-11-08 1978-05-26 Hitachi Ltd Decompressive gas phase reaction apparatus

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG90250A1 (en) * 2000-06-24 2002-07-23 Ips Ltd Apparatus and method for depositing thin film on wafer using atomic layer deposition
SG90249A1 (en) * 2000-07-22 2002-07-23 Ips Ltd Atomic layer deposition (ald) thin film deposition equipment having cleaning apparatus and cleaning method
WO2016190006A1 (fr) * 2015-05-26 2016-12-01 株式会社日本製鋼所 Dispositif de croissance de couche atomique, et partie échappement de dispositif de croissance de couche atomique
WO2016190007A1 (fr) * 2015-05-26 2016-12-01 株式会社日本製鋼所 Dispositif de croissance de couche atomique par plasma
JP2016222940A (ja) * 2015-05-26 2016-12-28 株式会社日本製鋼所 原子層成長装置および原子層成長装置排気部
JP2016225326A (ja) * 2015-05-26 2016-12-28 株式会社日本製鋼所 プラズマ原子層成長装置
CN107614750A (zh) * 2015-05-26 2018-01-19 株式会社日本制钢所 原子层成长装置及原子层成长装置排气部
US10508338B2 (en) 2015-05-26 2019-12-17 The Japan Steel Works, Ltd. Device for atomic layer deposition
US10519549B2 (en) 2015-05-26 2019-12-31 The Japan Steel Works, Ltd. Apparatus for plasma atomic layer deposition
US10604838B2 (en) 2015-05-26 2020-03-31 The Japan Steel Works, Ltd. Apparatus for atomic layer deposition and exhaust unit for apparatus for atomic layer deposition
CN107614750B (zh) * 2015-05-26 2020-04-24 株式会社日本制钢所 原子层成长装置及原子层成长装置排气部
US10633737B2 (en) 2015-05-26 2020-04-28 The Japan Steel Works, Ltd. Device for atomic layer deposition

Also Published As

Publication number Publication date
JPH0465146B2 (fr) 1992-10-19

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term