JPS61159574A - 高周波誘導加熱気相反応装置 - Google Patents

高周波誘導加熱気相反応装置

Info

Publication number
JPS61159574A
JPS61159574A JP28144884A JP28144884A JPS61159574A JP S61159574 A JPS61159574 A JP S61159574A JP 28144884 A JP28144884 A JP 28144884A JP 28144884 A JP28144884 A JP 28144884A JP S61159574 A JPS61159574 A JP S61159574A
Authority
JP
Japan
Prior art keywords
phase reaction
high frequency
induction heating
frequency induction
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28144884A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0557355B2 (enExample
Inventor
Jitsuya Noda
野田　実也
Yasushi Morita
靖 森田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP28144884A priority Critical patent/JPS61159574A/ja
Publication of JPS61159574A publication Critical patent/JPS61159574A/ja
Publication of JPH0557355B2 publication Critical patent/JPH0557355B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Constitution Of High-Frequency Heating (AREA)
  • Chemical Vapour Deposition (AREA)
JP28144884A 1984-12-31 1984-12-31 高周波誘導加熱気相反応装置 Granted JPS61159574A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28144884A JPS61159574A (ja) 1984-12-31 1984-12-31 高周波誘導加熱気相反応装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28144884A JPS61159574A (ja) 1984-12-31 1984-12-31 高周波誘導加熱気相反応装置

Publications (2)

Publication Number Publication Date
JPS61159574A true JPS61159574A (ja) 1986-07-19
JPH0557355B2 JPH0557355B2 (enExample) 1993-08-23

Family

ID=17639313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28144884A Granted JPS61159574A (ja) 1984-12-31 1984-12-31 高周波誘導加熱気相反応装置

Country Status (1)

Country Link
JP (1) JPS61159574A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996010659A3 (en) * 1994-09-30 1996-05-23 Lpe Spa An epitaxial reactor, susceptor and gas-flow system
US6002109A (en) * 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
CN102277603A (zh) * 2011-08-03 2011-12-14 深圳大学 一种感应热/电沉积制备涂层或薄膜的装置及方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996010659A3 (en) * 1994-09-30 1996-05-23 Lpe Spa An epitaxial reactor, susceptor and gas-flow system
CN1081683C (zh) * 1994-09-30 2002-03-27 Lpe公司 一种外延反应器
US6002109A (en) * 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US6403925B1 (en) 1995-07-10 2002-06-11 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
CN102277603A (zh) * 2011-08-03 2011-12-14 深圳大学 一种感应热/电沉积制备涂层或薄膜的装置及方法

Also Published As

Publication number Publication date
JPH0557355B2 (enExample) 1993-08-23

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees