JPS61159574A - Reactor for vapor phase reaction by high frequency induction heating - Google Patents

Reactor for vapor phase reaction by high frequency induction heating

Info

Publication number
JPS61159574A
JPS61159574A JP28144884A JP28144884A JPS61159574A JP S61159574 A JPS61159574 A JP S61159574A JP 28144884 A JP28144884 A JP 28144884A JP 28144884 A JP28144884 A JP 28144884A JP S61159574 A JPS61159574 A JP S61159574A
Authority
JP
Japan
Prior art keywords
phase reaction
high frequency
induction heating
frequency induction
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28144884A
Other languages
Japanese (ja)
Other versions
JPH0557355B2 (en
Inventor
Jitsuya Noda
野田 実也
Yasushi Morita
靖 森田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP28144884A priority Critical patent/JPS61159574A/en
Publication of JPS61159574A publication Critical patent/JPS61159574A/en
Publication of JPH0557355B2 publication Critical patent/JPH0557355B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Abstract

PURPOSE:To enable a vapor phase reaction by high frequency induction heating under reduced pressure by dividing a vertical reactor for a vapor phase reaction by high frequency induction heating into a vapor phase reaction part and a high frequency coil part and by airtightly isolating the parts from each other. CONSTITUTION:The vertical reactor for the vapor phase reaction by the high frequency induction heating is divided into a reaction furnace 1 in which the vapor phase reaction is carried out and a part in which the high frequency coil 2 is placed at the outside of the furnace 1. Even when the furnace 1 is evacuated, the coil 2 part is kept under desired pressure, so the abnormal discharge under reduced pressure is prevented. Since no metal enter the furnace 1 from the coil 2, the contamination of a wafer or the like by contaminants is prevented.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、高周波誘導加熱によるたて型気相反応装置に
関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vertical gas phase reactor using high frequency induction heating.

〔従来の技術〕[Conventional technology]

気相反応装置において、高周波コイルを用いた高周波誘
導加熱が広く用いられている。例えば、エピタキシー装
置においてこのような高周波誘導加熱が広く採用されて
いる。
High-frequency induction heating using a high-frequency coil is widely used in gas-phase reactors. For example, such high frequency induction heating is widely used in epitaxy equipment.

ところがたて型で高周波誘導加熱により気相反応させる
場合に、減圧式にすると、異常放電の問題が生じる。
However, when a vertical type is used to perform a gas phase reaction using high-frequency induction heating, if a reduced pressure type is used, the problem of abnormal discharge occurs.

例えば、たて型気相反応装置の1種であるパンケーキ型
たて型装置は、第3図に示す如く高周波コイル2′が、
ベルジャ11′(通例石英製)により画成される反応炉
1′の内部に位置するため、炉内圧力を減圧化すると、
高周波コイル2′も減圧下に置かれることになり、従っ
て異常放電を招くことになる。異常放電が起こると負荷
インピーダンスが大きく変化し、放電が不安定となり、
発振機が破損することもある。(第1図中、3′はカー
ボン支持台、4′はウェハ、5′は石英カバー、矢印は
ガスの流れである。) 実際上、炉内圧力をlOO〜200 Torr程度の圧
力にした場合には、放電なしで1100℃以上に加熱す
ることは困難であり、放電の問題は避けられない。
For example, in a pancake-type vertical reactor, which is a type of vertical gas-phase reactor, the high-frequency coil 2' is
Since it is located inside the reactor 1' defined by a bell jar 11' (usually made of quartz), when the pressure inside the reactor is reduced,
The high frequency coil 2' will also be placed under reduced pressure, thus causing abnormal discharge. When abnormal discharge occurs, the load impedance changes significantly, and the discharge becomes unstable.
The oscillator may be damaged. (In Figure 1, 3' is the carbon support, 4' is the wafer, 5' is the quartz cover, and the arrow is the gas flow.) In practice, when the pressure inside the furnace is set to about 100 to 200 Torr. It is difficult to heat above 1100° C. without discharge, and the problem of discharge is unavoidable.

それ程減圧せず、200 Torr以上の圧力の高い範
囲では、放電の問題はあまりないが、減圧式にするため
にはやはり放電の問題を解決する必要がある。
In a high pressure range of 200 Torr or more without much pressure reduction, there is not much of a problem with discharge, but in order to use a pressure reduction type, it is still necessary to solve the problem of discharge.

結局、従来の高周波誘導加熱による気相反応装置では、
真空度が高くなると(例えばP≦100Torrになる
と)、放電が起こりやすくなるため、実際にはP≦10
0 Torrでの気相成長は困難で、事実上出来なかっ
たものである。
In the end, in the conventional gas phase reactor using high frequency induction heating,
As the degree of vacuum increases (for example, when P≦100 Torr), discharge becomes more likely to occur, so in reality P≦10
Vapor phase growth at 0 Torr is difficult and virtually impossible.

〔発明の目的〕[Purpose of the invention]

本発明は、減圧下での高周波誘導加熱が可能なたて型気
相反応装置を提供することを目的とする。
An object of the present invention is to provide a vertical gas phase reactor capable of high-frequency induction heating under reduced pressure.

〔発明の構成〕[Structure of the invention]

本発明の高周波誘導加熱によるたて型気相反応装置は、
気相反応が行われる部分と高周波コイルが位置する部分
とを分けることにより、両部分が異なる圧力になること
を可能ならしめた構成とする。
The vertical gas phase reactor using high frequency induction heating of the present invention is
By separating the part where the gas phase reaction takes place and the part where the high-frequency coil is located, the configuration is such that the two parts can have different pressures.

〔発明の作用〕[Action of the invention]

上記構成の結果、気相反応が行われる反応炉と、異常放
電の原因となる高周波コイル部とを分けたため、炉内を
減圧しても、高周波コイル部分は任意の圧力、即ち炉内
圧より高い圧力(例えば常圧とか、低圧)にできるため
、高周波コイルの位置する部分が減圧化されることで発
生していた異常放電を防止できる。このため、減圧下で
の高周波誘導加熱による気相反応が可能となる。
As a result of the above configuration, the reactor where the gas phase reaction takes place is separated from the high-frequency coil section that causes abnormal discharge, so even if the pressure inside the furnace is reduced, the high-frequency coil section will be at an arbitrary pressure, that is, higher than the furnace internal pressure. Since the pressure can be maintained at normal pressure or low pressure, it is possible to prevent abnormal discharge that would otherwise occur due to reduced pressure in the area where the high-frequency coil is located. Therefore, a gas phase reaction by high frequency induction heating under reduced pressure becomes possible.

合わせて、上記両部分の分離により、炉そのものの容量
を小さくすることも可能となり、このため一般に石英か
ら造られるベルジャを小さくできる。かつ、炉内パージ
が短くできる。また、高周波コイルから汚染物質たる金
属が炉内に入ることが抑制でき、ウェハなどが金属によ
って汚染されることを防止できる。かつ、高周波コイル
部のパージガスを、安い窒素にすることもできるように
なる。
In addition, by separating the two parts, the capacity of the furnace itself can be reduced, and therefore the bell jar, which is generally made from quartz, can be made smaller. In addition, the furnace purge can be shortened. Further, it is possible to suppress metal contaminants from entering the furnace from the high-frequency coil, and it is possible to prevent wafers and the like from being contaminated by metal. In addition, the purge gas for the high-frequency coil section can be replaced by inexpensive nitrogen.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例について、図面を参照して説明
する。
An embodiment of the present invention will be described below with reference to the drawings.

第1図に示すのは、本発明をいわゆるパンケーキ型たて
型炉に適用した例である。
FIG. 1 shows an example in which the present invention is applied to a so-called pancake-type vertical furnace.

本例においては、反応炉1の外側に高周波コイル2を設
置することにより、気相反応が行われる反応炉1と、高
周波コイル2が位置する部分とを分ける。
In this example, by installing the high-frequency coil 2 outside the reactor 1, the reactor 1 where the gas phase reaction is performed is separated from the part where the high-frequency coil 2 is located.

加熱すべきウェハ等を載置するグラファイト・サセプタ
3は、ワークコイルである高周波コイル2に近接するよ
うに、炉内に設置する。
A graphite susceptor 3 on which a wafer or the like to be heated is placed is installed in the furnace so as to be close to the high frequency coil 2, which is a work coil.

本例ではステンレスベルジ中118(水冷式)と、石英
製インナーベルジャ11とにより反応炉1が画成されて
おり、石英ノズル4から反応ガス(水素やシラン系ガス
)が炉内に送られる構成になっている。
In this example, a reactor 1 is defined by a stainless steel bell jar 118 (water-cooled) and a quartz inner bell jar 11, and a reaction gas (hydrogen or silane gas) is sent into the reactor from a quartz nozzle 4. It is configured.

上記のように、高周波コイル2を反応炉1の外側に設置
することにより両者を分離したので、減圧下で気相反応
を行わせることができ、しかもその場合でも高周波コイ
ル2はその減圧の影響を受けないので、放電などの問題
は生じない、従って、反応を100 Torr以下の減
圧条件で行っても、高周波コイル2は常圧(乃至は低圧
)下に置くことができ、減圧下での気相反応が可能とな
る。
As mentioned above, the high-frequency coil 2 is installed outside the reactor 1 to separate the two, so the gas phase reaction can be performed under reduced pressure, and even in that case, the high-frequency coil 2 is affected by the effect of the reduced pressure Therefore, even if the reaction is carried out under reduced pressure conditions of 100 Torr or less, the high-frequency coil 2 can be placed under normal pressure (or low pressure), and no problems such as discharge will occur under reduced pressure. Gas phase reactions are possible.

本例の構成にあっては、高周波コイル2から汚染物質た
る金属が炉内に入ることも抑制できウェハなどが金属に
よって汚染されることを防止できる。高周波コイル部の
パージガスを、安い窒素にすることもできる。また、高
周波コイル2を外に出した分、たて方向(第1図の上下
方向)の長さを小さくしてもよいので、炉そのものの容
量を小さくすることも可能である。このためベルジャ(
特に石英製ベルジャ11)を小さくできて有利である。
With the configuration of this example, it is possible to suppress metal contaminants from entering the furnace from the high-frequency coil 2, and to prevent wafers and the like from being contaminated by metal. Cheap nitrogen can also be used as the purge gas for the high frequency coil section. Furthermore, since the length of the high-frequency coil 2 in the vertical direction (vertical direction in FIG. 1) may be reduced by extending the high-frequency coil 2 to the outside, it is also possible to reduce the capacity of the furnace itself. For this reason, Bellja (
In particular, it is advantageous that the quartz belljar 11) can be made smaller.

かつ、炉内パージが短くできる。In addition, the furnace purge time can be shortened.

第2図に示すのは、本発明の別の実施例である。Shown in FIG. 2 is another embodiment of the invention.

この例は、ベルジャ11. llaで画成される空間内
に、特に高周波コイル2の収納部21を形成し、この収
納部21を気相反応が行われる反応部分1aとを気密に
隔絶して、双方の圧力が異なることを可能としたもので
ある。
This example uses Belljar 11. A storage section 21 for the high-frequency coil 2 is formed in the space defined by the lla, and the storage section 21 is airtightly separated from the reaction section 1a where the gas phase reaction is performed, so that the pressures of both sides are different. This made it possible.

本例も、前記例と同様の作用効果を示す。かつ本例では
、高周波コイル2の部分の圧力の制御が一層確実にでき
る。第2図中、前記例と同様の構成部分については、同
じ符号を付した。
This example also exhibits the same effects as the previous example. In addition, in this example, the pressure in the high frequency coil 2 can be controlled more reliably. In FIG. 2, the same reference numerals are given to the same components as in the above example.

なお当然のことではあるが、本発明は図示した例にのみ
限定されるものではない。
It should be noted that, as a matter of course, the present invention is not limited to the illustrated example.

〔発明の効果〕〔Effect of the invention〕

上述の如く、本発明のたて型気相反応装置は、高周波コ
イルの放電の問題を解決して、減圧下での高周波誘導加
熱による気相反応が可能となったものである。
As described above, the vertical gas phase reaction apparatus of the present invention solves the problem of high frequency coil discharge and enables gas phase reaction by high frequency induction heating under reduced pressure.

【図面の簡単な説明】[Brief explanation of drawings]

第1図及び第2図は、各々本発明の一実施例を示す断面
図である。第3図は従来例を示す。 1、la・・・反応炉(気相反応部)、2・・・高周波
コイル、21・・・高周波コイル収納部。
FIG. 1 and FIG. 2 are sectional views each showing an embodiment of the present invention. FIG. 3 shows a conventional example. 1, la... Reaction furnace (gas phase reaction section), 2... High frequency coil, 21... High frequency coil storage section.

Claims (1)

【特許請求の範囲】 1、高周波誘導加熱によるたて型気相反応装置において
、気相反応が行われる部分と高周波コイルが位置する部
分とを分けることにより、両部分が異なる圧力になるこ
とを可能ならしめた高周波誘導加熱気相反応装置。 2、気相反応が行われる反応炉内を減圧し、かつ高周波
コイルを常圧下または炉内圧より高い圧力下とした特許
請求の範囲第1項記載の高周波誘導加熱気相反応装置。
[Claims] 1. In a vertical gas phase reaction device using high frequency induction heating, by separating the part where the gas phase reaction takes place and the part where the high frequency coil is located, it is possible to make sure that the two parts have different pressures. A high-frequency induction heating gas phase reactor that has been made possible. 2. The high-frequency induction heating gas-phase reaction apparatus according to claim 1, wherein the pressure inside the reactor in which the gas-phase reaction is carried out is reduced, and the high-frequency coil is placed under normal pressure or under a pressure higher than the pressure inside the furnace.
JP28144884A 1984-12-31 1984-12-31 Reactor for vapor phase reaction by high frequency induction heating Granted JPS61159574A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28144884A JPS61159574A (en) 1984-12-31 1984-12-31 Reactor for vapor phase reaction by high frequency induction heating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28144884A JPS61159574A (en) 1984-12-31 1984-12-31 Reactor for vapor phase reaction by high frequency induction heating

Publications (2)

Publication Number Publication Date
JPS61159574A true JPS61159574A (en) 1986-07-19
JPH0557355B2 JPH0557355B2 (en) 1993-08-23

Family

ID=17639313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28144884A Granted JPS61159574A (en) 1984-12-31 1984-12-31 Reactor for vapor phase reaction by high frequency induction heating

Country Status (1)

Country Link
JP (1) JPS61159574A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996010659A3 (en) * 1994-09-30 1996-05-23 Lpe Spa An epitaxial reactor, susceptor and gas-flow system
US6002109A (en) * 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
CN102277603A (en) * 2011-08-03 2011-12-14 深圳大学 Device and method of preparing coating or thin film by virtue of induction heating/electro-deposition

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996010659A3 (en) * 1994-09-30 1996-05-23 Lpe Spa An epitaxial reactor, susceptor and gas-flow system
CN1081683C (en) * 1994-09-30 2002-03-27 Lpe公司 Epitaxial reactor, susceptor and gas-flow system
US6002109A (en) * 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US6403925B1 (en) 1995-07-10 2002-06-11 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
CN102277603A (en) * 2011-08-03 2011-12-14 深圳大学 Device and method of preparing coating or thin film by virtue of induction heating/electro-deposition

Also Published As

Publication number Publication date
JPH0557355B2 (en) 1993-08-23

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