JPS61158969U - - Google Patents
Info
- Publication number
- JPS61158969U JPS61158969U JP1985042245U JP4224585U JPS61158969U JP S61158969 U JPS61158969 U JP S61158969U JP 1985042245 U JP1985042245 U JP 1985042245U JP 4224585 U JP4224585 U JP 4224585U JP S61158969 U JPS61158969 U JP S61158969U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- photodiode
- laser device
- semiconductor substrate
- view
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
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- H10W72/0198—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
-
- H10W72/536—
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- H10W72/884—
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- H10W90/756—
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985042245U JPH0419819Y2 (cg-RX-API-DMAC10.html) | 1985-03-23 | 1985-03-23 | |
| KR2019860002759U KR920002914Y1 (ko) | 1985-03-23 | 1986-03-10 | 반도체 레이저장치 |
| EP86302086A EP0196200B1 (en) | 1985-03-23 | 1986-03-20 | Semiconductor laser devices |
| US06/841,797 US4764931A (en) | 1985-03-23 | 1986-03-20 | Semiconductor device |
| DE8686302086T DE3680223D1 (de) | 1985-03-23 | 1986-03-20 | Halbleiterlaser-vorrichtung. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985042245U JPH0419819Y2 (cg-RX-API-DMAC10.html) | 1985-03-23 | 1985-03-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61158969U true JPS61158969U (cg-RX-API-DMAC10.html) | 1986-10-02 |
| JPH0419819Y2 JPH0419819Y2 (cg-RX-API-DMAC10.html) | 1992-05-06 |
Family
ID=12630639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985042245U Expired JPH0419819Y2 (cg-RX-API-DMAC10.html) | 1985-03-23 | 1985-03-23 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4764931A (cg-RX-API-DMAC10.html) |
| EP (1) | EP0196200B1 (cg-RX-API-DMAC10.html) |
| JP (1) | JPH0419819Y2 (cg-RX-API-DMAC10.html) |
| KR (1) | KR920002914Y1 (cg-RX-API-DMAC10.html) |
| DE (1) | DE3680223D1 (cg-RX-API-DMAC10.html) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4906839A (en) * | 1986-05-01 | 1990-03-06 | Pencom International Corp. | Hybrid surface emitting laser and detector |
| JPS63124486A (ja) * | 1986-11-13 | 1988-05-27 | Mitsubishi Electric Corp | 半導体レ−ザの製造方法 |
| US4905216A (en) * | 1986-12-04 | 1990-02-27 | Pencom International Corporation | Method for constructing an optical head by varying a hologram pattern |
| US4945524A (en) * | 1987-04-15 | 1990-07-31 | Pioneer Electronic Corporation | Compact optical pickup apparatus for optical disk player |
| US4999842A (en) * | 1989-03-01 | 1991-03-12 | At&T Bell Laboratories | Quantum well vertical cavity laser |
| JPH02271586A (ja) * | 1989-04-12 | 1990-11-06 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| US4980549A (en) * | 1990-03-05 | 1990-12-25 | Eastman Kodak Company | Beam position sensor for a light beam scanner having emitter and detector disposed along the same optical axis |
| DE59207920D1 (de) * | 1991-04-24 | 1997-03-06 | Siemens Ag | Optoelektronische Sendevorrichtung |
| US5293032A (en) * | 1992-02-10 | 1994-03-08 | Sydney Urshan | Digital data optical recording and playback system |
| US5319182A (en) * | 1992-03-04 | 1994-06-07 | Welch Allyn, Inc. | Integrated solid state light emitting and detecting array and apparatus employing said array |
| JPH0894938A (ja) * | 1994-09-21 | 1996-04-12 | Sony Corp | 共焦点顕微鏡並びに光記録再生装置 |
| DE19742150C1 (de) * | 1997-09-24 | 1999-04-22 | Siemens Nixdorf Inf Syst | Verfahren zur Herstellung einer optischen Speicherplatte und zu deren Herstellung geeigneter CD-R-Plattenrohling |
| US5903584A (en) * | 1998-01-05 | 1999-05-11 | Youngtek Electronics | Laser diode package |
| JP2008004914A (ja) * | 2006-05-22 | 2008-01-10 | Toshiba Corp | 半導体レーザ装置 |
| CN101689748B (zh) * | 2007-06-27 | 2012-06-20 | 皇家飞利浦电子股份有限公司 | 光学传感器模块及其制造 |
| US9570648B2 (en) * | 2012-06-15 | 2017-02-14 | Intersil Americas LLC | Wafer level optical proximity sensors and systems including wafer level optical proximity sensors |
| US9721837B2 (en) | 2015-04-16 | 2017-08-01 | Intersil Americas LLC | Wafer level optoelectronic device packages with crosstalk barriers and methods for making the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1073460A (en) * | 1964-07-31 | 1967-06-28 | Battelle Development Corp | Semiconductor devices |
| DE2542174C3 (de) * | 1974-09-21 | 1980-02-14 | Nippon Electric Co., Ltd., Tokio | Halbleiterlaservorrichtung |
| DE2737345C2 (de) * | 1976-08-20 | 1991-07-25 | Canon K.K., Tokio/Tokyo | Halbleiterlaser-Vorrichtung mit einem Peltier-Element |
| JPS6195591A (ja) * | 1984-10-16 | 1986-05-14 | Sony Corp | 半導体レ−ザ |
-
1985
- 1985-03-23 JP JP1985042245U patent/JPH0419819Y2/ja not_active Expired
-
1986
- 1986-03-10 KR KR2019860002759U patent/KR920002914Y1/ko not_active Expired
- 1986-03-20 US US06/841,797 patent/US4764931A/en not_active Expired - Lifetime
- 1986-03-20 DE DE8686302086T patent/DE3680223D1/de not_active Expired - Lifetime
- 1986-03-20 EP EP86302086A patent/EP0196200B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4764931A (en) | 1988-08-16 |
| KR920002914Y1 (ko) | 1992-05-08 |
| EP0196200B1 (en) | 1991-07-17 |
| EP0196200A3 (en) | 1988-01-13 |
| KR860012475U (ko) | 1986-10-10 |
| DE3680223D1 (de) | 1991-08-22 |
| EP0196200A2 (en) | 1986-10-01 |
| JPH0419819Y2 (cg-RX-API-DMAC10.html) | 1992-05-06 |