JPS6115589B2 - - Google Patents

Info

Publication number

JPS6115589B2

JPS6115589B2 JP15081777A JP15081777A JPS6115589B2 JP S6115589 B2 JPS6115589 B2 JP S6115589B2 JP 15081777 A JP15081777 A JP 15081777A JP 15081777 A JP15081777 A JP 15081777A JP S6115589 B2 JPS6115589 B2 JP S6115589B2

Authority

JP

Japan

Prior art keywords

film

region

diffusion source

conductivity type

impurity concentration

Prior art date

1977-12-14

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• 238000009792 diffusion process Methods 0.000 claims description 22
• 239000012535 impurity Substances 0.000 claims description 21
• 239000004065 semiconductor Substances 0.000 claims description 19
• 238000000034 method Methods 0.000 claims description 14
• 230000003647 oxidation Effects 0.000 claims description 12
• 238000007254 oxidation reaction Methods 0.000 claims description 12
• 239000000758 substrate Substances 0.000 claims description 11
• 238000010438 heat treatment Methods 0.000 claims description 9
• 238000004519 manufacturing process Methods 0.000 claims description 9
• 239000011248 coating agent Substances 0.000 claims description 5
• 238000000576 coating method Methods 0.000 claims description 5
• 238000000151 deposition Methods 0.000 claims description 4
• 229910004298 SiO 2 Inorganic materials 0.000 description 7
• 238000000206 photolithography Methods 0.000 description 6
• 238000007796 conventional method Methods 0.000 description 4
• 229920002120 photoresistant polymer Polymers 0.000 description 3
• NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
• 229910052581 Si3N4 Inorganic materials 0.000 description 2
• 238000000605 extraction Methods 0.000 description 2
• 238000001020 plasma etching Methods 0.000 description 2
• 230000001681 protective effect Effects 0.000 description 2
• 239000012808 vapor phase Substances 0.000 description 2
• 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
• 229910052785 arsenic Inorganic materials 0.000 description 1
• RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
• 239000013078 crystal Substances 0.000 description 1
• 230000007547 defect Effects 0.000 description 1
• 238000005530 etching Methods 0.000 description 1
• 238000009413 insulation Methods 0.000 description 1
• 238000005468 ion implantation Methods 0.000 description 1
• 229910052751 metal Inorganic materials 0.000 description 1
• 239000002184 metal Substances 0.000 description 1
• 238000001259 photo etching Methods 0.000 description 1
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
• 238000007740 vapor deposition Methods 0.000 description 1