JPS61154178A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS61154178A
JPS61154178A JP59278211A JP27821184A JPS61154178A JP S61154178 A JPS61154178 A JP S61154178A JP 59278211 A JP59278211 A JP 59278211A JP 27821184 A JP27821184 A JP 27821184A JP S61154178 A JPS61154178 A JP S61154178A
Authority
JP
Japan
Prior art keywords
metal layer
insulating layer
forming
concentration region
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59278211A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0156536B2 (enrdf_load_stackoverflow
Inventor
Cho Shimada
兆 嶋田
Tatsuo Akiyama
秋山 龍雄
Yutaka Etsuno
越野 裕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59278211A priority Critical patent/JPS61154178A/ja
Publication of JPS61154178A publication Critical patent/JPS61154178A/ja
Publication of JPH0156536B2 publication Critical patent/JPH0156536B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP59278211A 1984-12-27 1984-12-27 半導体装置の製造方法 Granted JPS61154178A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59278211A JPS61154178A (ja) 1984-12-27 1984-12-27 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59278211A JPS61154178A (ja) 1984-12-27 1984-12-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61154178A true JPS61154178A (ja) 1986-07-12
JPH0156536B2 JPH0156536B2 (enrdf_load_stackoverflow) 1989-11-30

Family

ID=17594143

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59278211A Granted JPS61154178A (ja) 1984-12-27 1984-12-27 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61154178A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0156536B2 (enrdf_load_stackoverflow) 1989-11-30

Similar Documents

Publication Publication Date Title
US4149307A (en) Process for fabricating insulated-gate field-effect transistors with self-aligned contacts
US3475234A (en) Method for making mis structures
KR900008277B1 (ko) 전계효과 트랜지스터의 제조방법
JPS6310589B2 (enrdf_load_stackoverflow)
JPS5950567A (ja) 電界効果トランジスタの製造方法
JPS6214459A (ja) 半導体装置の製造方法
JPH0329301B2 (enrdf_load_stackoverflow)
US4700455A (en) Method of fabricating Schottky gate-type GaAs field effect transistor
JPS61154178A (ja) 半導体装置の製造方法
JPS6326553B2 (enrdf_load_stackoverflow)
JPS616871A (ja) 電界効果トランジスタの製造方法
JPS6286869A (ja) 半導体装置の製造方法
JPH06151467A (ja) 電界効果トランジスタの製造方法
JPS61152080A (ja) 電界効果トランジスタ
JPS6195571A (ja) 半導体装置の製造方法
JPS58127378A (ja) 半導体装置の製造法
JPS6273775A (ja) 電界効果トランジスタの製造方法
JPS61176162A (ja) 電界効果半導体装置とその製造方法
JPS6163063A (ja) 半導体装置の製造方法
JPS6177365A (ja) 半導体装置の製造方法
JPS60261178A (ja) 半導体素子の製造方法
JPH04199517A (ja) 電界効果トランジスタの製造方法
JPS63142872A (ja) 自己整合型電界効果トランジスタの製造方法
JPS60163457A (ja) 半導体装置の製造方法
JPS61144071A (ja) 半導体装置の製造方法