JPS61154178A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS61154178A JPS61154178A JP59278211A JP27821184A JPS61154178A JP S61154178 A JPS61154178 A JP S61154178A JP 59278211 A JP59278211 A JP 59278211A JP 27821184 A JP27821184 A JP 27821184A JP S61154178 A JPS61154178 A JP S61154178A
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- insulating layer
- forming
- concentration region
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59278211A JPS61154178A (ja) | 1984-12-27 | 1984-12-27 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59278211A JPS61154178A (ja) | 1984-12-27 | 1984-12-27 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61154178A true JPS61154178A (ja) | 1986-07-12 |
JPH0156536B2 JPH0156536B2 (enrdf_load_stackoverflow) | 1989-11-30 |
Family
ID=17594143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59278211A Granted JPS61154178A (ja) | 1984-12-27 | 1984-12-27 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61154178A (enrdf_load_stackoverflow) |
-
1984
- 1984-12-27 JP JP59278211A patent/JPS61154178A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0156536B2 (enrdf_load_stackoverflow) | 1989-11-30 |
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