JPS61148875A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS61148875A
JPS61148875A JP59271479A JP27147984A JPS61148875A JP S61148875 A JPS61148875 A JP S61148875A JP 59271479 A JP59271479 A JP 59271479A JP 27147984 A JP27147984 A JP 27147984A JP S61148875 A JPS61148875 A JP S61148875A
Authority
JP
Japan
Prior art keywords
region
gate
epitaxially grown
grown layer
silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59271479A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0329300B2 (enExample
Inventor
Nobuo Mizuki
水木　信夫
Shinichi Sasaki
真一 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Electric Manufacturing Ltd
Original Assignee
Toyo Electric Manufacturing Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Electric Manufacturing Ltd filed Critical Toyo Electric Manufacturing Ltd
Priority to JP59271479A priority Critical patent/JPS61148875A/ja
Publication of JPS61148875A publication Critical patent/JPS61148875A/ja
Publication of JPH0329300B2 publication Critical patent/JPH0329300B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Thyristors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP59271479A 1984-12-22 1984-12-22 半導体装置の製造方法 Granted JPS61148875A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59271479A JPS61148875A (ja) 1984-12-22 1984-12-22 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59271479A JPS61148875A (ja) 1984-12-22 1984-12-22 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61148875A true JPS61148875A (ja) 1986-07-07
JPH0329300B2 JPH0329300B2 (enExample) 1991-04-23

Family

ID=17500611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59271479A Granted JPS61148875A (ja) 1984-12-22 1984-12-22 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61148875A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04340220A (ja) * 1988-06-17 1992-11-26 Tadahiro Omi 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04340220A (ja) * 1988-06-17 1992-11-26 Tadahiro Omi 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0329300B2 (enExample) 1991-04-23

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