JPH0329300B2 - - Google Patents
Info
- Publication number
- JPH0329300B2 JPH0329300B2 JP59271479A JP27147984A JPH0329300B2 JP H0329300 B2 JPH0329300 B2 JP H0329300B2 JP 59271479 A JP59271479 A JP 59271479A JP 27147984 A JP27147984 A JP 27147984A JP H0329300 B2 JPH0329300 B2 JP H0329300B2
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial growth
- gate
- region
- silicide
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
Landscapes
- Thyristors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59271479A JPS61148875A (ja) | 1984-12-22 | 1984-12-22 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59271479A JPS61148875A (ja) | 1984-12-22 | 1984-12-22 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61148875A JPS61148875A (ja) | 1986-07-07 |
| JPH0329300B2 true JPH0329300B2 (enExample) | 1991-04-23 |
Family
ID=17500611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59271479A Granted JPS61148875A (ja) | 1984-12-22 | 1984-12-22 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61148875A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2501118B2 (ja) * | 1988-06-17 | 1996-05-29 | 忠弘 大見 | 半導体装置の製造方法 |
-
1984
- 1984-12-22 JP JP59271479A patent/JPS61148875A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61148875A (ja) | 1986-07-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5155561A (en) | Permeable base transistor having an electrode configuration for heat dissipation | |
| EP0022001A1 (fr) | Transistor à effet de champ vertical de puissance pour hautes fréquences, et procédé de réalisation d'un tel transistor | |
| US4837178A (en) | Method for producing a semiconductor integrated circuit having an improved isolation structure | |
| JPH03262136A (ja) | シリコン基板上に第3族−第5族材料で製造された高性能トランジスタの改良及びその製造方法 | |
| JPH0553299B2 (enExample) | ||
| US4851888A (en) | Conductivity modulation type vertical MOS-FET | |
| JPS59103389A (ja) | 超伝導素子及びその製法 | |
| JPH0329300B2 (enExample) | ||
| US4695856A (en) | Semiconductor device | |
| JPS609159A (ja) | 半導体装置 | |
| JPH0645340A (ja) | 半導体装置及びその製造方法 | |
| JPS5834943A (ja) | 半導体装置の製造方法 | |
| JPH10117002A (ja) | ショットキーバリア半導体装置およびその製法 | |
| KR100319738B1 (ko) | 동일한오믹금속을전극으로갖는이종접합쌍극자트랜지스터제조방법 | |
| JPS58164241A (ja) | 半導体装置の製造方法 | |
| JPS5984468A (ja) | 半導体装置 | |
| JPS61129867A (ja) | 半導体装置 | |
| JPS63138772A (ja) | シヨツトキバリア形半導体装置およびその製造方法 | |
| JP2843569B2 (ja) | 半導体装置 | |
| JPS62160761A (ja) | 半導体装置 | |
| JP3142009B2 (ja) | 静電誘導形ゲート構造の製造方法 | |
| JPH06232181A (ja) | ショットキ接合型電界効果トランジスタの製法 | |
| JPS62160762A (ja) | 半導体装置 | |
| JPS62162358A (ja) | 半導体装置及びその製造方法 | |
| JPH0460340B2 (enExample) |